Band gap renormalization and carrier localization effects in InGaN/GaN quantum-wells light emitting diodes with Si doped barriers

The optical properties of two kinds of InGaN/GaN quantum-wells light emitting diodes, one of which was doped with Si in barriers while the other was not, are comparatively investigated using time-integrated photoluminescence and time-resolved photoluminescence techniques. The results clearly demonstrate the coexistence of the band gap renormalization and phase-space filling effect in the structures with Si doped barriers. It is surprisingly found that photogenerated carriers in the intentionally undoped structures decay nonexponentially, whereas carriers in the Si doped ones exhibit a well exponential time evolution. A new model developed by O. Rubel, S. D. Baranovskii, K. Hantke, J. D. Heber, J. Koch, P. Thomas, J. M. Marshall, W. Stolz, and W. H. Ruhle [J. Optoelectron. Adv. Mater. 7, 115 (2005)] was used to simulate the decay curves of the photogenerated carriers in both structures, which enables us to determine the localization length of the photogenerated carriers in the structures. It is found that the Si doping in the barriers not only leads to remarkable many-body effects but also significantly affects the carrier recombination dynamics in InGaN/GaN layered heterostructures. (c) 2006 American Institute of Physics.

Zn2SiO4/ZnO Core/Shell Coaxial Heterostructure Nanobelts Formed by an Epitaxial Growth

Si-doped ZnO can be synthesized on the surface of the early grown Zn2SiO4 nanostructures and form core/ shell coaxial heterostructure nanobelts with an epitaxial orientation relationship. A parallel interface with a periodicity array of edge dislocations and an inclined interface without dislocations can be formed. The visible green emission is predominant in PL spectra due to carrier localization by high density of deep traps from complexes of impurities and defects. Due to band tail localization induced by composition and defect fluctuation, and high density of free-carriers donated by doping, especially the further dissociation of excitons into free-carriers at high excitation intensity, the near-band-edge emission is dominated by the transition of free-electrons to free-holes, and furthermore, exhibits a significant excitation power-dependent red-shift characteristic. Due to the structure relaxation and the thermalization effects, carrier delocalization takes place in deep traps with increasing excitation density. As a result, the green emission passes through a maximum at 0.25I(0) excitation intensity, and the ratio of the violet to green emission increases monotonously as the excitation laser power density increases. The violet and green emission of ZnO nanostructures can be well tuned by a moderate doping and a variation in the excitation density.

Thickness dependent dislocation, electrical and optical properties in InN films grown by MOCVD

InN thin films with different thicknesses are grown by metal organic chemical vapor deposition, and the dislocations, electrical and optical properties are investigated. Based on the model of mosaic crystal, by means of X-ray diffraction skew geometry scan, the edge dislocation densities of 4.2 x 10(10) cm(-2) and 6.3 x 10(10) cm(-2) are fitted, and the decrease of twist angle and dislocation density in thicker films are observed. The carrier concentrations of 9 x 10(18) cm(-3) and 1.2 x 10(18) cm(-3) are obtained by room temperature Hall effect measurement. V-N is shown to be the origin of background carriers, and the dependence of concentration and mobility on film thickness is explained. By the analysis of S-shape temperature dependence of photoluminescence peak, the defects induced carrier localization is suggested be involved in the photoluminescence. Taking both the localization and energy band shrinkage effect into account, the localization energies of 5.05 meV and 5.58 meV for samples of different thicknesses are calculated, and the decrease of the carrier localization effect in the thicker sample can be attributed to the reduction of defects.

Optical investigation on the annealing effect and its mechanism of GaInAs/GaNAs quantum wells

Thermal annealing of GaInAs/GaNAs quantum wells (QWs) as well as other nitrogen- and indium-contained QW structures grown by molecular beam epitaxy and its effect on optical properties are investigated. The photoluminescence (PL) and photovoltaic (PV) spectra of annealed GaInAs/GaNAs QWs show that the luminescence properties become degraded due to the N diffusion from the GaNAs barrier layers to the GaInAs well layer. Meantime, the annealing-induced blueshift of the PL peak in this QW system is mainly induced by the change of In distribution, suggesting that the In reorganization is greatly assisted by the N-induced defects. The elucidation of annealing effect in GaInAs/GaNAs QW samples is helpful for a better understanding to the annealing effect in the GaInNAs/GaAs QWs. (C) 2003 Elsevier Science B.V. All rights reserved.

Damage evolution, localization and failure of solids subjected to impact loading

In order to reveal the underlying mesoscopic mechanism governing the experimentally observed failure in solids subjected to impact loading, this paper presents a model of statistical microdamage evolution to macroscopic failure, in particular to spallation. Based on statistical microdamage mechanics and experimental measurement of nucleation and growth of microcracks in an Al alloy subjected to plate impact loading, the evolution law of damage and the dynamical function of damage are obtained. Then, a lower bound to damage localization can be derived. It is found that the damage evolution beyond the threshold of damage localization is extremely fast. So, damage localization can serve as a precursor to failure. This is supported by experimental observations. On the other hand, the prediction of failure becomes more accurate, when the dynamic function of damage is fitted with longer experimental observations. We also looked at the failure in creep with the same idea. Still, damage localization is a nice precursor to failure in creep rupture.

Shear localization and recrystallization in dynamic deformation of 8090 Al-Li alloy

The microstructural evolution in localized shear deformation was investigated in an 8090 Al-Li alloy by split Hopkinson pressure bar (strain rate of approximately 10(3) s(-1)) at ambient temperature and 77 K. The alloy was tested in the peak-, over-, under-, and natural-aged conditions, that provide a wide range of microstructural parameters and mechanical properties. Two types of localized shear bands were distinguished by optical microscopy: the deformed shear band and the white-etching shear band. They form at different stages of deformation during localization. There are critical strains for the occurrence of deformed and white-etching localized shear deformation, at the imposed strain rate. Observations by transmission electron microscopy reveal that the white-etching bands contain fine equiaxed grains; it is proposed that they are the result of recrystallization occurring during localization. The deformed-type bands are observed after testing at 77 K in all heat treatment conditions, but they are not as well defined as those developed at ambient temperature. Cracking often occurs along the localized shear at ambient temperature. The decrement in temperature is favorable for the nucleation, growth and coalescence of the microcracks along the shear bands, inducing fracture.

Damage Localization, Sensitivity of Energy Release and the Catastrophe Transition

Large earthquakes can be viewed as catastrophic ruptures in the earth’s crust. There are two common features prior to the catastrophe transition in heterogeneous media. One is damage localization and the other is critical sensitivity; both of which are related to a cascade of damage coalescence. In this paper, in an attempt to reveal the physics underlying the catastrophe transition, analytic analysis based on mean-field approximation of a heterogeneous medium as well as numerical simulations using a network model are presented. Both the emergence of damage localization and the sensitivity of energy release are examined to explore the inherent statistical precursors prior to the eventual catastrophic rupture. Emergence of damage localization, as predicted by the mean-field analysis, is consistent with observations of the evolution of damage patterns. It is confirmed that precursors can be extracted from the time-series of energy release according to its sensitivity to increasing crustal stress. As a major result, present research indicates that the catastrophe transition and the critical point hypothesis (CPH) of earthquakes are interrelated. The results suggest there may be two cross-checking precursors of large earthquakes: damage localization and critical sensitivity.

Shear Localization In Dynamic Deformation: Microstructural Evolution

Investigations made by the authors and collaborators into the microstructural aspects of adiabatic shear localization are critically reviewed. The materials analyzed are low-carbon steels, 304 stainless steel, monocrystalline Fe-Ni-Cr, Ti and its alloys, Al-Li alloys, Zircaloy, copper, and Al/SiCp composites. The principal findings are the following: (a) there is a strain-rate-dependent critical strain for the development of shear bands; (b) deformed bands and white-etching bands correspond to different stages of deformation; (c) different slip activities occur in different stages of band development; (d) grain refinement and amorphization occur in shear bands; (e) loss of stress-carrying capability is more closely associated with microdefects rather than with localization of strain; (f) both crystalline rotation and slip play important roles; and (g) band development and band structures are material dependent. Additionally, avenues for new research directions are suggested.

Evolution of thermoplastic shear localization and related microstructures in Awl/SiCp composites under dynamic compression

The localized shear deformation in the 2024 and 2124 Al matrix composites reinforced with SiC particles was investigated with a split Hopkinson pressure bar (SHPB) at a strain rate of about 2.0x10(3) s(-1). The results showed that the occurrence of localized shear deformation is sensitive to the size of SiC particles. It was found that the critical strain, at which the shear localization occurs, strongly depends on the size and volume fraction of SiC particles. The smaller the particle size, the lower the critical strain required for the shear localization. TEM examinations revealed that Al/SiCp interfaces are the main sources of dislocations. The dislocation density near the interface was found to be high and it decreases with the distance from the particles. The Al matrix in shear bands was highly deformed and severely elongated at low angle boundaries. The Al/SiCp interfaces, particularly the sharp corners of SiC particles, provide the sites for microcrack initiation. Eventual fracture is caused by the growth and coalescence of microcracks along the shear bands. It is proposed that the distortion free equiaxed grains with low dislocation density observed in the center of shear band result from recrystallization during dynamic deformation.

Carrier concentration profiling in magnetic GaMnSb/GaSb investigated by electrochemistry capacitance-voltage profiler

Depth profiles of carrier concentrations in GaMnSb/GaSb are investigated by electrochemistry capacitance-voltage profiler and electrolyte of Tiron. The carrier concentration in GaMnSb/GaSb measured by this method is coincident with the results of Hall and X-ray diffraction measurements. It is indicated that most of the Mn atoms in GaMnSb take the site of Ga, play a role of acceptors, and provide shallow acceptor level(s).

Damage evaluation and damage localization of rock

Knowledge of damage accumulation and corresponding failure evolution are prerequisite for effective maintenance of civil engineering so as to avoid disaster. Based on statistical mesoscopic damage mechanics, it was revealed that there are three stages in the process of deformation, damage and failure of multiscale heterogeneous elastic-brittle medium. These are uniformly distributed damage, localized damage and catastrophic failure. In order to identify the transitions from scattering damage to macroscopically localized one, a condition for damage localization was given. The experiments of rock under uniaxial compression with the aid of observations of acoustic emission and speckle correlation do support the concept of localization. This provides a potential approach to properly evaluate damage accumulation in practice. In addition, it is found in the experiments that catastrophic failure displays critical sensitivity. This gives a helpful clue to the prediction of catastrophic failure. (C) 2004 Elsevier Ltd. All rights reserved.

Relationship between strain localization and catastrophic rupture

In order to explore a prior warning to catastrophic rupture of heterogeneous media, like rocks, the present study investigates the relationship between surface strain localization and catastrophic rupture. Instrumented observations on the evolution of surface strain field and the catastrophic rupture of a rock under uniaxial compression were carried out. It is found that the evolution of surface strain field displays two phases: at the early stage, the strain field keeps nearly uniform with weak fluctuations increasing slowly; but at the stage prior to catastrophic rupture, a certain accelerating localization develops and a localized zone emerges. Based on the measurements, an analysis was performed with local mean-field approximation. More importantly, it is found that the scale of localized zone is closely related to the catastrophic rupture strain and the rupture strain can be calculated in accord with the local-mean-field model satisfactorily. This provides a possible clue to the forecast of catastrophic rupture. (c) 2007 Elsevier Ltd. All rights reserved.

Impact of carrier stiffness and microtopology on two-dimensional kinetics of P-selectin and P-selectin glycoprotein ligand-1 (PSGL-1) interactions

Mechanics and surface microtopology of the molecular carrier influence cell adhesion, but the mechanisms underlying these effects are not well understood. We used a micropipette adhesion frequency assay to quantify how the carrier stiffness and microtopology affected two-dimensional kinetics of interacting adhesion molecules on two apposing surfaces. Interactions of P-selectin with P-selectin glycoprotein ligand-1 (PSGL-1) were used to demonstrate such effects by presenting the molecules on three carrier systems: human red blood cells (RBCs), human promyelocytic leukemia HL-60 cells, and polystyrene beads. Stiffening the carrier alone or in cooperation with roughing the surface lowered the two-dimensional affinity of interacting molecules by reducing the forward rate but not the reverse rate, whereas softening the carrier and roughing the surface had opposing effects in affecting two-dimensional kinetics. In contrast, the soluble antibody bound with similar three-dimensional affinity to surface-anchored P-selectin or PSGL-1 constructs regardless of carrier stiffness and microtopology. These results demonstrate that the carrier stiffness and microtopology of a receptor influences its rate of encountering and binding a surface ligand but does not subsequently affect the stability of binding. This provides new insights into understanding the rolling and tethering mechanism of leukocytes onto endothelium in both physiological and pathological processes.

A modified split hopkinson torsional bar in studying shear localization

A modified split Hopkinson torsional bar (SHTB) is introduced to eliminate the effect of the loading reverberation of the standard SHTB on the study of evolution of shear localization. The effect, the cause and the method by which to eliminate loading wave reverberation are carefully analysed and discussed. By means of the modified apparatus, the post-mortem observation of tested specimens can provide data on actual evolution of micro-structure and micro-damage during shear localization. Some test results of shear banding conducted with this apparatus support the use of the modified design. Moreover, the modification makes possible the correlation of evolving micro-structures to the transient shear stress-strain recording.

Characteristics and microstructure in the evolution of shear localization in ti-6al-4v alloy

A new interrupting method was proposed and the split Hopkinson torsional bar (SHTB) was modified in order to eliminate the effect of loading reverberation on post-mortem observations. This makes the comparative study of macro- and microscopic observations on tested materials and relevant transient measurement of tau - gamma curve possible. The experimental results of the evolution of shear localization in in Ti-6Al-4V alloy studied with the modified SHTB are reported in the paper. The collapse of shear stress seems to be closely related to the appearance of a certain critical coalescence of microcracks. The voids may form within the localized shear zone at a quite early stage. Finally, void coalescence results in elongated cavities and their extension leads to fracture along the shear band.