Growing 20 cm Long DWNTs/TWNTs at a Rapid Growth Rate of 80-90 mu m/s

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First charge collection and position-precision data on the medium-resistivity silicon strip detectors before and after neutron irradiation up to 2x10(14) n/cm(2)

Test strip detectors of 125 mu m, 500 mu m, and 1 mm pitches with about 1 cm(2) areas have been made on medium-resistivity silicon wafers (1.3 and 2.7 k Ohm cm). Detectors of 500 mu m pitch have been tested for charge collection and position precision before and after neutron irradiation (up to 2 x 10(14) n/cm(2)) using 820 and 1030 nm laser lights with different beam-spot sizes. It has been found that for a bias of 250 V a strip detector made of 1.3 k Ohm cm (300 mu m thick) can be fully depleted before and after an irradiation of 2 x 10(14) n/cm(2). For a 500 mu m pitch strip detector made of 2.7 k Ohm cm tested with an 1030 nm laser light with 200 mu m spot size, the position reconstruction error is about 14 mu m before irradiation, and 17 mu m after about 1.7 x 10(13) n/cm(2) irradiation. We demonstrated in this work that medium resistivity silicon strip detectors can work just as well as the traditional high-resistivity ones, but with higher radiation tolerance. We also tested charge sharing and position reconstruction using a 1030 nm wavelength (300 mu m absorption length in Si at RT) laser, which provides a simulation of MIP particles in high-physics experiments in terms of charge collection and position reconstruction, (C) 1999 Elsevier Science B.V. All rights reserved.

Microscopic analysis of defects in a high resistivity silicon detector irradiated to 1.7x10(15)n/cm(2)

Current-based microscopic defect analysis methods with optical filling techniques, namely current deep level transient spectroscopy (I-DLTS) and thermally stimulated current (TSC), have been used to study defect levels in a high resistivity silicon detector (p(+)-n-n(+)) induced by very high fluence neutron (VHFN) irradiation (1.7x10(15) n/cm(2)). As many as fourteen deep levels have been detected by I-DLTS. Arrhenius plots of the I-DLTS data have shown defects with energy levels ranging from 0.03 eV to 0.5 eV in the energy band gap. Defect concentrations of relatively shallow levels (E(t) < 0.33 eV) are in the order of 10(13)cm(-3), while those for relatively deep levels (E(t) > 0.33 eV) are in the order of 10(14) cm(-3). TSC data have shown similar defect spectra. A full depletion voltage of about 27,000 volts has been estimated by C-V measurements for the as-irradiated detector, which corresponds to an effective space charge density (N-eff) in the order of 2x10(14) cm(-3). Both detector leakage current and full depletion voltage have been observed to increase with elevated temperature annealing (ETA). The increase of the full depletion voltage corresponds to the increase of some deep levels, especially the 0.39 eV level. Results of positron annihilation spectroscopy have shown a decrease of total concentration of vacancy related defects including vacancy clusters with ETA, suggesting the breaking up of vacancy clusters as possible source of vacancies for the formation of single defects during the reverse anneal.

First charge collection and position-precision data on the medium-resistivity silicon strip detectors before and after neutron irradiation up to 2x10(14) n/cm(2)

Test strip detectors of 125 mu m, 500 mu m, and 1 mm pitches with about 1 cm(2) areas have been made on medium-resistivity silicon wafers (1.3 and 2.7 k Ohm cm). Detectors of 500 mu m pitch have been tested for charge collection and position precision before and after neutron irradiation (up to 2 x 10(14) n/cm(2)) using 820 and 1030 nm laser lights with different beam-spot sizes. It has been found that for a bias of 250 V a strip detector made of 1.3 k Ohm cm (300 mu m thick) can be fully depleted before and after an irradiation of 2 x 10(14) n/cm(2). For a 500 mu m pitch strip detector made of 2.7 k Ohm cm tested with an 1030 nm laser light with 200 mu m spot size, the position reconstruction error is about 14 mu m before irradiation, and 17 mu m after about 1.7 x 10(13) n/cm(2) irradiation. We demonstrated in this work that medium resistivity silicon strip detectors can work just as well as the traditional high-resistivity ones, but with higher radiation tolerance. We also tested charge sharing and position reconstruction using a 1030 nm wavelength (300 mu m absorption length in Si at RT) laser, which provides a simulation of MIP particles in high-physics experiments in terms of charge collection and position reconstruction, (C) 1999 Elsevier Science B.V. All rights reserved.

Production of new superheavy Z=108-114 nuclei with U-238, Pu-244, and Cm-248,Cm-250 targets

Within the framework of the dinuclear system (DNS) model, production cross sections of new superheavy nuclei with charged numbers Z=108-114 are analyzed systematically. Possible combinations based on the actinide nuclides U-238, Pu-244, and Cm-248,Cm-250 with the optimal excitation energies and evaporation channels are pointed out to synthesize new isotopes that lie between the nuclides produced in the cold fusion reactions and the Ca-48-induced fusion reactions experimentally, which are feasible to be constructed experimentally. It is found that the production cross sections of superheavy nuclei decrease drastically with the charged numbers of compound nuclei. Larger mass asymmetries of the entrance channels enhance the cross sections in 2n-5n channels.

Three dimensional solution structure of neurotoxin CM-11 from the Ophiophagus hannah

The Ophiophagus hannah (King Cobra) neurotoxin CM-11 is a small protein with 72 amino acid residues, Based on complete assignments of H-1-NMR resonances and determination of secondary structures of CM-11, 349 distance and 27 dihedral angle constraints including 19 phi's and 8 chi's were collected from NOESY and DQF-COSY , and the chemical stereospecific assignment of beta(1)H was partially achieved, Twelve structures with lower energy was obtained via metric matrix distance geometry and refinement with simulated annealing, These structures have a low RMSD of 0.14 nm for backbone atoms and 0.20 nm for heavy atoms, with no distance constraint violation more than 0.05 nm, and no dihedral angle violation more than 3 degrees.

眼镜王蛇蛇毒神经毒素CM-11三级结构的确定

在完成了眼镜王蛇毒液抽提物ＣＭ－１１的残基质子谱峰归属和二级结构的判定后，利用１Ｈ的ＮＯＥＳＹ谱和ＤＱＦ－ＣＯＳＹ谱选取了距离约束、测定了Φ角和χ１，并做了部分β１Ｈ的立体归属。利用度量矩阵距离几何法计算了其三维空间结构，并进行了结构的优化。同一个系列中挑选的１２个低能分子结构中，骨架的ＲＭＳＤ为０．１４ｎｍ，所有重原子的ＲＭＳＤ为０．２０ｎｍ，所有的距离约束偏差不超过０．０５ｎｍ，二面角的偏差不超过３°

眼镜王蛇神经毒素 CM-11 ~1H 谱的计算机辅助谱峰自动归属

２ＤＮＭＲ谱的自动归属是核磁共振发展的一个方向，ＣＡＰＲＩ即是蛋白质１Ｈ谱的计算机辅助谱峰归属的一种程序。作者将其应用于眼镜王蛇神经毒素ＣＭ－１１１Ｈ谱的归属，讨论了ＣＡＰＲＩ的功能和特点以及运用在ＣＭ－１１后得到的分析结果。

Complete assignment of H-1-NMR resonances of the king cobra neurotoxin CM-11

The king cobra(Ophiophagus hannah) neurotoxin CM-11 is long-chain peptide with 72 amino acid residues. Its complete assignment of H-1-NMR resonances was obtained using various 2D-NMR technologies, including DQF-COSY, clean-TOCSY and NOESY.

Determination of the secondary structure of the king cobra neurotoxin CM-11

The king cobra neuotoxin CM-11 is a small protein with 72 amino acid residues. After its complete assignments of H-1-NMR resonance's were obtained using various 2D-NMR technologies, including of DQF-COSY, clean-TOCSY AND NOESY, the secondary structure was analysed by studying the various NOEs extracted from the NOESY spectra and the distribution of chemical shifts. The secondary structure was finally determined by MCD as follows: a triple-strand antiparallel beta sheet with I20-W36, R37-A43 and V53--S59 as its beta strands, a short alpha helix formed by W30-G35 and four turns formed by P7-K10, C14-G17, K50-V53 and D61-N64.

眼镜王蛇神经毒素CM-11核磁共振氢谱谱峰的完全归属

眼镜王蛇抽提物ＣＭ－１１为含７２个残基的长链神经毒素，对其进行了ＤＱＦ－ＣＯＳＹ，ＴＯＣＳＹ和ＮＯＥＳＹ等一系列２Ｄ－ＮＭＲ谱测定，借助序列专一归属法完成了ＣＭ－１１ＮＭＲ氢谱的完整归属。

眼镜王蛇蛇毒神经毒素CM-11二级结构单元的判定

眼镜王蛇毒液抽提物ＣＭ－１１为含７２个残基的长链神经毒素，对其进行了ＤＱＦ－ＣＯＳＹ，ＴＯＣＳＹ和ＮＯＥＳＹ等一系列２Ｄ－ＮＭＲ谱测定，通过系统地分析各种ＮＯＥ信息、化学位移的分布等数据推测了蛋白质有规律二级结构，最后利用ＭＣＤ主链引导法确定了它的二级结构。其中有三段反平行β折叠股（Ｉ２０～Ｗ２６、Ｒ３７～Ａ４３和Ｖ５３～Ｓ５９）、一段α螺旋构象（Ｗ３０～Ｇ３５）和四个可能的转角（Ｐ７～Ｋ１０，Ｃ１４～Ｇ１７，Ｋ５０～Ｖ５３，Ｄ６１～Ｎ６４），蛇毒神经毒素ＣＭ－１１其他肽片段处在伸展构象。