ABSORPTION PEAKS AT 2663 AND 2692 CM-1 OBSERVED IN NEUTRON-TRANSMUTATION-DOPED SILICON

Autoria(s): ZHONG L; WANG ZG; WAN S; LIN LY
Data(s)

1989
Identificador

http://ir.semi.ac.cn/handle/172111/14459

http://www.irgrid.ac.cn/handle/1471x/101264
Idioma(s)

英语
Fonte

ZHONG L; WANG ZG; WAN S; LIN LY.ABSORPTION PEAKS AT 2663 AND 2692 CM-1 OBSERVED IN NEUTRON-TRANSMUTATION-DOPED SILICON,JOURNAL OF APPLIED PHYSICS,1989,66(9):4275-4278
Palavras-Chave #半导体材料
Tipo

期刊论文
Acesso ao item digital