Combined study of gamma p ->eta p and pi(-)p ->eta n in a chiral constituent quark approach

Within a chiral constituent quark model approach, η-meson production on the proton via electromagnetic and hadron probes is studied. With few parameters, the differential cross section and polarized beam asymmetry for γp → ηp and differential cross section for π − p → ηn processes are calculated and successfully compared with the data in the center-of-mass energy range from threshold up to 2 GeV. The five known resonances S11(1535), S11(1650), P13(1720),D13(1520), and F15(1680) are found to be dominant in the reaction mechanisms in both channels. Possible roles played by new resonances are also investigated; and in the photoproduction channel, significant contribution from S11 and D15 resonances, with masses around 1715 and 2090 MeV, respectively, are deduced. For the so-called missing resonances, no evidence is found within the investigated reactions. The helicity amplitudes and decay widths of N ∗ → πN, ηN are also presented and found to be consistent with the Particle Data Group values.

Study of nucleon resonances in a chiral quark model via eta productions

In this report we investigate eta-meson productions oil the proton via electromagnetic and hadron probes in a chiral quark model approach. The observables, such as, differential cross section and beam asymmetry for the two productions are calculated and compared with the experiment. The five known resonances S-11(1535) S-11(1650); P-13(1720) D-13(1520), and F-15(1680) are found to be dominant in the reaction mech-anisms in both channels. Significant, contribution from a new S-11 resonances are deduced. For the so-called "missing resonances", no evidence is found within the investigated reactions. The partial wave amplitudes for pi(-)p -> eta n are also presented.

eta photoproduction on the proton in a chiral constituent quark approach via a one-gluon-exchange model

A formalism based on a chiral quark model (chi QM) approach complemented with a one-gluon-exchange model, to take into account the breakdown of the SU(6)circle times O(3) symmetry, is presented. The configuration mixing of wave functions for nucleon and resonances are derived. With few adjustable parameters, differential cross-section and polarized-beam asymmetry for the gamma p -> eta p process are calculated and successfully compared with the data in the center-of-mass energy range from threshold to 2 GeV. The known resonances S-11(1535), S-11(1650), P-13(1720), D-13(1520), and F-15(1680), as well as two new S-11 and D-15 resonances, are found to be dominant in the reaction mechanism. Moreover, connections among the scattering amplitudes of the chi QM approach and the helicity amplitudes, as well as decay widths of resonances, are established. Possible contributions from the so-called missing resonances are investigated and found to be negligible.

Chiral ligand 2-(2 '-piperidinyl)pyridine: synthesis, resolution and application in asymmetric diethylzinc addition to aldehydes

Chiral ligand 2-(2'-piperidinyl)pyridine 1 has been synthesized in good overall yield by sequential benzylation, hydrogenation and debenzylation of 2,2'-bipyridine. Its enantiomerically pure enantiomers have been obtained by resolution of 2-(1-benzyl-2-piperidinyl)pyridine 2 with D-tartaric acid (or L-tartaric acid) followed by debenzylation. The absolute configuration was determined by X-ray analysis of the (S)-2 D-tartrate. It was demonstrated that I can be used as an effective enantioselective catalyst in the addition of diethylzinc to aldehydes.

Dynamic properties and asymmetry of tension and compression of metal matrix composites under impact loading

The mechanical behaviors of 2124, Al-5Cu, Al-Li and 6061 alloys reinforced by silicon carbide particulates, together with 15%SiCw/6061 alloy, were studied under the quasi-static and impact loading conditions, using the split Hopkinson tension/compression bars and Instron universal testing machine. The effect of strain rate on the ultra tensile strength (UTS), the hardening modulus and the failure strain was investigated. At the same time, the SEM observations of dynamic fracture surfaces of various MMC materials showed some distinguished microstructures and patterns. Some new characteristics of asymmetry of mechanical behaviors of MMCs under tension and compression loading were also presented and explained in details, and they could be considered as marks to indicate, to some degree, the mechanism of controlling damage and failure of MMCs under impact loading. The development of new constitutive laws about MMCs under impact loading should benefit from these experimental results and theoretical analysis.

Asymmetry of the photoionization rate of H atoms by a sequence of one-cycle laser pulses

Using an unperturbed scattering theory, the characteristics of H atom photoionization are studied respectively by a linearly- and by a circularly- polarized one-cycle laser pulse sequence. The asymmetry for photoelectrons in two directions opposite to each other is investigated. It is found that the asymmetry degree varies with the carrier-envelope (CE) phase, laser intensity, as well as the kinetic energy of photoelectrons. For the linear polarization, the maximal ionization rate varies with the CE phase, and the asymmetry degree varies with the CE phase in a sine-like pattern. For the circular polarization, the maximal ionization rate keeps constant for various CE phases, but the variation of asymmetry degree is still in a sine-like pattern.

Duration-dependent asymmetry in photoionization of H atoms in few-cycle laser pulses

The photoionization of H atoms irradiated by few-cycle laser pulses is studied numerically. The variations of the total ionization, the partial ionizations in opposite directions, and the corresponding asymmetry with the carrier-envelope phase in several pulse durations are obtained. We find that besides a stronger modulation on the partial ionizations, the change of pulse duration leads to a shift along carrier-envelope (CE) phase in the calculated signals. The phase shift arises from the nonlinear property of ionization and relates closely to the Coulomb attraction of the parent ion to the ionized electron. Our calculations show good agreement with the experimental observation under similar conditions.

Fish-Specific Duplicated dmrt2b Contributes to a Divergent Function through Hedgehog Pathway and Maintains Left-Right Asymmetry Establishment Function

Gene duplication is thought to provide raw material for functional divergence and innovation. Fish-specific dmrt2b has been identified as a duplicated gene of the dmrt2a/terra in fish genomes, but its function has remained unclear. Here we reveal that Dmrt2b knockdown zebrafish embryos display a downward tail curvature and have U-shaped somites. Then, we demonstrate that Dmrt2b contributes to a divergent function in somitogenesis through Hedgehog pathway, because Dmrt2b knockdown reduces target gene expression of Hedgehog signaling, and also impairs slow muscle development and neural tube patterning through Hedgehog signaling. Moreover, the Dmrt2b morphants display defects in heart and visceral organ asymmetry, and, some lateral-plate mesoderm (LPM) markers expressed in left side are randomized. Together, these data indicate that fish-specific duplicated dmrt2b contributes to a divergent function in somitogenesis through Hedgehog pathway and maintains the common function for left-right asymmetry establishment.

Well-width dependence of in-plane optical anisotropy in (001) GaAs/AlGaAs quantum wells induced by in-plane uniaxial strain and interface asymmetry

The well-width dependence of in-plane optical anisotropy (IPOA) in (001) GaAs/AlxGa1-xAs quantum wells induced by in-plane uniaxial strain and interface asymmetry has been studied comprehensively. Theoretical calculations show that the IPOA induced by in-plane uniaxial strain and interface asymmetry exhibits much different well-width dependence. The strain-induced IPOA is inversely proportional to the energy spacing between heavy- and light-hole subbands, so it increases with the well width. However, the interface-related IPOA is mainly determined by the probability that the heavy- and light-holes appear at the interfaces, so it decreases with the well width. Reflectance difference spectroscopy has been carried out to measure the IPOA of (001) GaAs/AlxGa1-xAs quantum wells with different well widths. Strain- and interface-induced IPOA have been distinguished by using a stress apparatus, and good agreement with the theoretical prediction is obtained. The anisotropic interface potential parameters are also determined. In addition, the energy shift between the interface- and strain-induced 1H1E reflectance difference (RD) structures, and the deviation of the 1L1E RD signal away from the prediction of the calculation model have been discussed.

Chiral symmetry analysis and rigid rotational invariance for the lattice dynamics of single-wall carbon nanotubes

We provide a detailed expression of the vibrational potential for the lattice dynamics of single-wall carbon nanotubes (SWCNT's) satisfying the requirements of the exact rigid translational as well as rotational symmetries, which is a nontrivial generalization of the valence force model for the planar graphene sheet. With the model, the low-frequency behavior of the dispersion of the acoustic modes as well as the flexure mode can be precisely calculated. Based upon a comprehensive chiral symmetry analysis, the calculated mode frequencies (including all the Raman- and infrared-active modes), velocities of acoustic modes, and the polarization vectors are systematically fitted in terms of the chiral angle and radius, where the restrictions of various symmetry operations of SWCNT's are fulfilled.

Asymmetry in the vertically aligned growth induced InAs islands in GaAs

A 10-InAs-island-layer vertically coupled quantum dot structure on (001) GaAs was grown and investigated by molecular beam epitaxy and transmission electron microscopy. The result shows that the vertically aligned InAs islands are asymmetrical along the two < 110 > directions on the (001) growth plane. Such an asymmetry in the vertically coupled quantum dot structure can be explained with the chemical polarity in the III-V compound semiconductors.