84.5MeV~(12)C~(4+)离子诱发金属靶原子发射的Kβ与Kα-X射线强度比值的研究

本实验是在中国科学院兰州近代物理研究所,国家实验室的重离子加速器上完成的.实验用OR-TEC公司生产的HPGe X射线探测器测量了84.5 MeV的12C4+离子轰击Cu,Mo,Ag,Cd,In,Sn,W和Au金属靶产生的K壳层特征X射线谱,计算了Kβ与Kα-X射线强度的比值,并将结果与Scofield用Hartree-Fock-Slater模型计算出的理论值与用其它方法(如:衰变幅射,用光子,电子,质子等粒子与靶相互作用)得到的实验值进行了比较.比较结果表明用84.5 MeV的12C4+离子轰击Cu,Mo,Ag,Cd,In,Sn,W和Au金属靶产生的Kβ与K-αX射线强度比值比理论值和其它实验值要大许多.

Anisotropic strain relaxation of thin Fe film on c(4 x 4) reconstructed GaAs (001) surface

National Natural Science Foundation of China 60836002 10674130 60521001;Major State Basic Research of China 2007CB924903;Chinese Academy of Sciences KJCX2.YW.W09-1

C~(4+)离子与金属表面碰撞引起的X射线产生截面的研究

<正>离子与原子碰撞物理学是利用离子与原子相互作用,通过测量碰撞产物的状态及碰撞产物之间的相关性来研究碰撞机制和过程的一门学科。测量碰撞后的各种反应产物及其截面数据,对于天体物理、重离子物理、受控热核聚变、材料科学、粒子加速器技术及激光技术等许多研究领域都有十分重要的意义。

空心原子的K-x射线谱

报道了利用兰州重离子加速器国家实验室ECR离子源首次引出的全裸Ar离子和类氢、类氦、类锂Ar离子与Be固体表面相互作用形成的空心原子x射线实验测量结果 .结果发现 ,同样条件下 ,由于K壳层电子的剥离 ,Ar的K_x射线单离子发射产额增加了 5个量级 ,约为 3 6× 10 - 3每原子 ;而当L壳层存在电子时 ,Ar的K_x射线几乎观测不到

Microstructure, thermal stability and mechanical properties of the novel (W1-xAlx)C-Co (x=0.2, 0.33, 0.4, 0.5) cemented carbide

Bulk novel cemented carbides (W1-xAlx)C-10.1 vol% Co (x = 0.2, 0.33, 0.4, 0.5) are prepared by mechanical alloying and hot-pressing sintering. Hot-pressing (HP) is used to fabricate the bulk bodies of the hard alloys. The novel cemented carbides have good mechanical properties compared with WC-Co. The density and operating cost of the novel material is much lower than a WC-Co system. The material is easy to process and the processing leads to nano-scaled, rounded, particles in the bulk material. The hardness of (W1-xAlx)C-10.1 vol% Co (x = 0.2, 0.33, 0.4, 0.5) hard material is 20.37, 21.16, 21.59 and 22.16 GPa, and the bending strength is 1257, 1238, 1211 and 1293 MPa, with the aluminum content varying from 20% to 50%. The relationship between the microstructure and the mechanical properties of the novel hard alloy is also discussed.

LaF_3-XF(X=Li,K)熔盐的X-射线衍射分析

利用1083K 时的 X-射线衍射数据,导出了 LaF_3-4LiF 和 LaF_3-4KF 系熔盐溶液的径向分布函数;获得了熔盐的离子间距数据,其中 LaF_3-4LiF 熔盐系中 La~(3+)-F~-的相互作用距离为0.238nm,LaF_3-4KF 系中的为0.233nm。还就熔盐离子间距结果讨论了温度与 La~(3+)的库伦力的问题。

室温铁磁性半导体Mn_xGa_(1-x)Sb

采用离子注入、离子沉积及后期退火方法制备了稀磁半导体单晶Mn_xGa_(1-x)Sb，在室温下（300 K）获得了单晶的磁滞回线。用X射线衍射方法分析了铁磁性半导体单晶Mn_xGa_(1-x)Sb的结构，用电化学C-V法分析了单晶的载流子浓度分布。由X射线衍射得知，Mn_xGa_(1-x)Sb中Mn含量逐渐由近表面处的x = 0.09下降到晶片内部的x = 0。电化学C-V测得单晶的空穴浓度高达1 * 10~(21)cm~(-3)，表明Mn_xGa_(1-x)Sb单晶中大部分Mn原子占据Ga位，起受主作用。

Uniaxial Strain Effects on Optical Properties of c-plane Wurtzite GaN

We investigate the uniaxial strain effect in the c-plane on optical properties of wurtzite GaN based on k center dot p theory, the spin-orbit interactions are also taken into account. The energy dispersions show that the uniaxial strain in the c-plane gives an anisotropic energy splitting in the k(x) - k(y) plane, which can reduce the density of states. The uniaxial strain also results in giant in-plane optical polarization anisotropy, hence causes the threshold carrier density reduced. We clarify the relations between the uniaxial strain and the optical polarization properties. As a result, it is suggested that the compressive uniaxial strain perpendicular to the laser cavity direction in the c-plane is one of the preferable approaches for the effcient improvement of GaN-based laser performance.

室温铁磁性半导体Mn_xGa_(1-x)Sb

采用离子注入、离子沉积及后期退火方法制备了稀磁半导体单晶Mn_xGa_(1-x)Sb，在室温下（300 K）获得了单晶的磁滞回线。用X射线衍射方法分析了铁磁性半导体单晶Mn_xGa_(1-x)Sb的结构，用电化学C-V法分析了单晶的载流子浓度分布。由X射线衍射得知，Mn_xGa_(1-x)Sb中Mn含量逐渐由近表面处的x = 0.09下降到晶片内部的x = 0。电化学C-V测得单晶的空穴浓度高达1 * 10~(21)cm~(-3)，表明Mn_xGa_(1-x)Sb单晶中大部分Mn原子占据Ga位，起受主作用。

C~(q+)和O~(q+)与原子碰撞的电子俘获过程的理论研究

在ECPSSR理论的基础上,利用OBKN近似描述电子俘获过程,得到了包括电子俘获过程贡献的ECPSSR理论,编写了相应的计算程序。采用该程序计算了不同电荷态离子与多种靶原子碰撞的电子俘获截面和相应的X射线产生截面,将计算得到的包含电子俘获过程贡献的X射线产生截面与实验结果进行了比较。对于具有满K壳层的入射离子碰撞,X射线产生截面与入射离子电荷态基本无关;对于以直接电离为主导的碰撞过程,计算得到的X射线产生截面与实验数据符合得很好;对于全裸和单K空穴入射离子的碰撞,计算高估了X射线产生截面。

Studies of K-shell x-ray energy shifts induced by MeV/u heavy ions

This paper reports that the K x-ray spectra of the thin target 47Ag, 48Cd, 49In and 50Sn were measured by an HPGe semi-conductor detector in collisions with 84.5 MeV 6C4+ ions. Our experiment revealed the Kα x-ray energy shifts were not obvious and the Kβ1 x-ray energy shifts were about 90∼110 eV. The simple model of Burch et al has been previously used to calculate the K x-ray energy shifts due to an additional vacancy in 2p orbit. The present work extends the model of Burch to calculate the x-ray energy shifts of multiple ionized atoms induced by heavy ions with kinetic energy of MeV/u. In addition to our experimental results, many other experimental results are compared with the calculated values by using the model.

电制冷Si-PIN X射线谱仪的研制

X射线谱仪以其多用途、无损、操作简单、快速、价格低廉和运行费用很低等优点，己经成为应用最为广泛的多元素分析仪器。采用液氮冷却的X射线谱仪在荧光分析技术领域得到广泛的应用和普遍认可。液氮制冷的一个主要缺点是必须有一个液氮存储罐作为完整谱仪的一部分。从而，在实际应用中受到液氮价格贵和液氮供应厂少的限制，大大地制约了该种谱仪的进一步推广使用。如果能采用另外的技术得到足够低的温度，在此温度下探测器具有极低的漏电流，也可使X射线谱仪有极低的噪声和相当好的能量分辨率；因此克服上述限制就成为一个有重要意义的课题方向。本文在国内首次实现采用半导体电制冷技术对平面离子注入（Si一PIN）探测器制冷，降低探测器漏电流至10~(-13)以下，配合低噪声脉冲光反馈前放，成功地使得整个x射线谱仪能量分辨率达到262eV（对~(55)Fe的Mn Kα K射线）。虽然电制冷X射线谱仪的分辨率没有采用液氮冷却的好，但是它的性能已足够在包括利用X射线能量分离进行荧光分析等多种应用所需。考虑到元素周期表中钾元素以上的毗邻两元素的Ka特征X射线的能量差在380eV以上；例如，K和Ca的峰线宽分别是243eV和245 eV，由此得到电制冷X射线谱仪己可完成对K, C a和更高Z的元素进行能散荧光分析工作。并且，液氮罐的取消可方便的设计在野外使用的便携式X射线荧光分析设备。 文中全面介绍了X射线谱仪的各个组成部分和其背景知识。并详细描述了探测器系统、电制冷系统和低噪声电子学系统，充分展示了研制X射线谱仪的关键所在。最后给出了电制冷X射线谱仪的测试结果和应用设计。

裂纹顶端位错的运动和小范围屈服的K_(Ⅱc)

本文从裂纹顶端位错运动的简化模型估计形成塑性区所消耗的功;从而计算临界裂纹扩展力。由于Ⅰ型加载和Ⅱ型加载的应力状态有所不同,裂纹顶端塑性功耗也会不一样。基于上述思想,考虑了小范围屈服的K_(Ⅰc)和K_(Ⅱc)的关系,得出K(Ⅱc)>K(Ⅰc)的结论,符合实验结果;并就K(Ⅱc)/K(Ⅰc)的比值与材料性能和温度的关系作了讨论。

Calculation of energy levels in InGaAs/GaAs quantum dot array

The subbands of the ground state E-c1, the first excited state E-c2 and heavy hole state E-HH1 are calculated by solving the eigenvalues of effective-mass Hamiltonian H-0 which is derived from eight-band k . p theory and the calculations are performed at k(x) = k, = k = 0 for the three-dimensional array of InGaAs/GaAs quantum dots (QDs). With indium content in InGaAs QDs gradually increasing from 30% to 100%,the intersubband transition wavelength of E-c2 to E-c1, blue-shifts from 18.50 to 11.87 mu m,while the transition wavelength of E-c1, to E-HH1, red-shifts from 1. 04 to 1. 73 mu m. With the sizes of Ir-0.5 Ga-0.5 As and InAs QDs increasing from 1.0 to 5.0 nm, the intersubband transition from E-c1, to E-C2 transforms from bound-state-to-continuum-state to bound-state-to-bound-state, and the corresponding intersubband transition wavelengths red-shift from 8.12 pm (5.90 pm) to 53.47 mu m (31.87 pm), respectively, and the transition wavelengths of E-C1 to E-HH1 red-shift from 1. 13 mu m (1.60 mu m) to 1.27 mu m (2.01 mu m), respectively.