15 resultados para Barrier effects
em Chinese Academy of Sciences Institutional Repositories Grid Portal
Resumo:
Rockmass movement due to mining steep metallic ore body is a considerable question in the surface movement and deformation issue caused by underground mining. Research on coal mining induced rockmass movement and its prediction problem have been performed for a long-term, and have achieved great progress at home and abroad. However, the rockmass movement caused by mining steep metal mine is distinctivly different from coal seam mining.. Existing surface movement laws and deformation prediction methods are not applicable to the rockmass movement caused by mining steep metal mine. So far the home and abroad research to this theory is presently at an early stage, and there isn’t mature theory or practical prediction method, which made a great impact on production. In this paper, the research object—Jinchuan nickel mine, which is typical steep metal mine, characterized by complex geological conditions, developed faults, cracked rockmass, high geostress, and prominent engineering stability problems. In addition, backfill mining method is used in the mine, the features of rockmass movement caused by this mining method are also different from other mining methods. In this paper, the laws of rock mass movement, deformation and destroy mechanism, and its prediction were analyzed based on the collection of data, detailed in-sit engineering geology survey, ground movement monitoring by GPS, theoretical analysis and numerical simulation. According to the GPS monitoring of ground surface movement, ground subsidence basin with apparent asymmetry is developing, the influence scope is larger in the upper faulted block than in the lower faulted block, and the center of ground movement is moving along the upper faulted block direction with increasing depth of mining. During the past half and seven years, the largest settlement has amounted to 1287.5mm, and corresponding horizontal displacement has amounted to 664.6mm. On the ground surface, two fissure belts show a fast-growing trend of closure. To sum up, mining steep metal mine with backfill method also exist the same serious problem of rockmass movement hazards. Fault, as a low intensity zone in rockmass, when it located within the region of mining influence, the change of potential energy mainly consumed in fault deformation associated with rockmass structure surface friction, which is the essence of displacement and stress barrier effects characterized by fault rupture zone. when steep fault located in the tensile deformation region incurred by underground excavation, no matter excavation in hangingwall or in footwall of the fault, there will be additional tensile stress on the vertical fault plane and decrease in the shear strength, and always showing characteristics of normal fault slip, which is the main reason of fault escarpment appeared on the ground surface. The No.14 shaft deformation and failure is triggered by fault activation, which showed with sidewall move, rupture, and break down features as the main form of a concentrated expression of fault effects. The size and orientation of principal stress in surrounding rock changed regularly with mining; therefore, roadway deformation and damage at different stages have different characteristics and distribution models. During the process of mining, low-intensity weak structures surface always showed the most obvious reaction, accompany with surface normal stress decrease and shear strength bring down, to some extent, occurred with relative slide and deformation. Meanwhile, the impact of mining is a relatively long process, making the structure surface effect of roadway deformation and damage more prominent than others under the influence of mining. Roadway surrounding rockmass deformation caused by the change of strain energy density field after excavation mainly belongs to elastic deformation, and the correspondented damage mainly belongs to brittle rupture, in this circumstance, surrounding rockmass will not appear large deformation. The large deformation of surrounding rockmass can only be the deformation associated with structure surface friction or the plastic deformation of itself, which mainly caused by the permanent self-weigh volume force,and long-term effect of mining led to the durability of this deformation Good pitting fill effect and supporting effect of backfill, as well as the friction of rockmass structure surface lead to obvious macro-rockmass movement with long-lag characteristics. In addition, the loss of original intensity and new structure surface arisen increased flexibility in rockmass and fill deformation in structure surface, which made the time required for rockmass potential energy translate into deformation work associated with plastic deformation and structure surface friction consumed much, and to a large extent, eliminated the time needed to do those plastic work during repeated mining, all of which are the fundamental reason of rockmass movement aftereffect more significant than before. Mining steep deposits in high tectonic stress area and in gravity stress area have different movement laws and deformation mechanism. The steep deposit, when the vertical size of the mining areas is smaller than the horizontal size of the orebody, no matter mining in gravity stress area or in high tectonic stress area, they have similar features of ground movement with mining horizontal orebody; contrarily, there will appear double settlement centers on the ground surface under the condition of mining in high tectonic stress area, while there will always be a single center under the other condition. Meanwhile the ground movement lever, scale of mining influence area and macro features of ground movement, deformation and fracture are also different from mining in gravity stress area, and the fundamental reason lies in the impact of orientation of the maximum principal stress on rock movement features in in-site rock stress field. When mining thick and steep deposit, the ground surface movement and deformation characteristic curves are significantly different from excavating the horizontal ore bed and thin steep deposit. According to the features of rockmass movement rate, the development process of mining-induced rockmass movement is divided into three stages: raising stage, steadily stage and gradually decay stage. Considering the actual exploitation situation, GPS monitoring results and macro-characteristics of surface movement, the current subsidence pattern of Jinchuan No.2 mine is in the early stage of development. Based on analysis of surface movement rate, surface subsidence rate increase rapidly when mining in double lever at the same time, and reach its peak until the exploitation model ended. When double lever mining translate into single, production decreased, surface subsidence rate suddenly start to reduce and maintain a relatively low value, and the largest subsidence center will slowly move along with the hangingwall ore body direction with increasing depth of mining, at the same time, the scope and extent of subsidence in footwall ore body will begin magnify, and a sub-settlement center will appear on ground surface, accompanied with the development and closure trend of ground fissure, the surrounding rockmass of shaft and roadway will be confronted to more frequent and severe deformation and failure, and which will have a negative impact on the overall stability of No.2 mine mining. On the premise of continuity of rockmass movement, gray system model can be used in ground rockmass movement prediction for good results. Under the condition of backfill mining step by step, the loose effect of compact status of the hard, broken rockmass led to lower energy release rate, although surrounding rockmass has high elastic energy, loose and damage occurred in the horizontal ore body, which made the mining process safety without any large geological hazards. During the period of mining the horizontal ore body to end, in view of its special “residual support role”, there will be no large scale rockmass movement hazards. Since ground surface movement mainly related to the intensity of mining speed and backfill effect, on the premise of constant mining speed, during the period of mining the horizontal ore body to end, the rate of ground surface rockmass movement and deformation won’t have sudden change.
Resumo:
Background: Subretinal microphotodiode array (MPDA) is a type of visual prosthesis used for the implantation in the subretinal space of patients with progressive photoreceptor cell loss. The present study aimed to evaluate the effect of materials for MPDA on the viability, apoptosis and barrier function of cultured pig retinal pigment epithelium (RPE) cells.Methods: Primary culture of pig RPE cells was performed and 24 pig eyes were used to start RPE culture. The third passage of the cultures was plated on different materials for MPDA and MPDAs. The tetrazolium dye-reduction assay (MTT) was used to determine RPE cell viability. Flow cytometry was measured to indicate the apoptosis rates of RPE cells on different materials. RPE cells were also cultured on microporous filters, and the transepithelial resistance and permeability of the experimental molecule were measured to determine the barrier function.Results: The data from all the methods indicated no significant difference between the materials groups and the control group, and the materials tested showed good biocompatibility.Conclusions: The materials for MPDA used in the present study had no direct toxicity to the RPE cells and did not release harmful soluble factors that affected the barrier function of RPE in vitro.
Resumo:
A new method to reduce the dark current of GaN based Schottky barrier ultraviolet photodetector is proposed. In comparision with conventional i-CaN/n(+)-GaN structure, an additional thin p-GaN cap layer is introduced on the i-GaN(n(-)-GaN) in the new structure. The simulation results showed that the additional layer makes the dark current to decrease in the photodetector due to the increase of the Schottky barrier height. The effects of thickness and carrier concentration of p-GaN layer on the dark current of the photodetector were also studied. It is suggested that the dark current of the new structure device could be better reduced by employing p-GaN with higher carrier concentration as the cap layer.
Resumo:
InGaN photovoltaic structures with p-n junctions have been fabricated by metal organic chemical vapour deposition. Using double-crystal X-ray diffraction measurements, it was found that the room temperature band gaps of p-InGaN and n-InGaN films were 2.7 and 2.8 eV, respectively. Values of 3.4 x 10(-2) mA cm(-2) short-circuit current, 0.43 V open-circuit voltage and 0.57 fill factor have been achieved under ultraviolet illumination (360 nm), which were related to p-n junction connected back-to-back with a Schottky barrier and many defects of the p-InGaN film. 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Resumo:
The authors report the effects of rapid thermal annealing (RTA) on the emission properties of highly uniform self-assembled InAs quantum dots (QDs) emitting at 1.3 mu m grown on GaAs substrate by metal organic chemical vapor deposition. Postgrowth RTA experiments were performed under N-2 flow at temperatures ranging from 600 to 900 degrees C for 30 s using GaAs proximity capping. Surprisingly, in spite of the capping, large blueshifts in the emission peak (up to about 380 meV at 850 degrees C) were observed (even at low annealing temperatures) along with enhanced integrated photoluminescence (PL) intensities. Moreover, pronounced peak broadenings occurred at low annealing temperatures (< 700 degrees C), indicating that RTA does not always cause peak narrowing, as is typically observed with traditional QDs with large inhomogeneous PL linewidths. The mechanism behind the large peak blueshift was studied and found to be attributed to the as-grown QDs with large size, which cause a larger dot-barrier interface and greater strain in and near the QD regions, thereby greatly promoting Ga-In intermixing across the interface during RTA. The results reported here demonstrate that it is possible to significantly shift the emission peak of the QDs by RTA without any additional procedures, even at lower annealing temperatures. (c) 2007 American Institute of Physics.
Resumo:
By using a transfer-matrix method on the basis of two-dimensional (2D) Bloch sums in accordance with a tight-binding scheme, a self-consistent calculation on the resonant tunneling in asymmetric double-barrier structures is presented, in which contributions to resonant tunneling from both three-dimensional (3D) electrons in the contacts and 2D electrons in the spacer or accumulation layers are considered simultaneously. The charge buildup effect on the current versus voltage (I-V) curves is evaluated systematically, showing quantitatively how it results in the I-V bistability and enhanced differences between I-V curves for positive and negative bias in an asymmetric double-barrier structure. Special attention is focused on the interaction between 3D-2D and 2D-2D resonant-tunneling processes, including the suppression of 2D-2D resonant tunneling by the charge buildup in the well accompanying the 3D-2D resonant tunneling. The effects of the emitter doping condition (doping concentration, spacer thickness) on the presence of two types of quasi-2D levels in the emitter accumulation layers, and on the formation of a potential bulge in the emitter region, are discussed in detail in relation to the tunneling process.
Resumo:
Electrical measurements were combined with surface techniques to study the Pt/Si interfaces at various silicide formation temperatures. Effects of deep centers on the Schottky barrier heights were studied. Hydrogen plasma treatment was used to passivate the impurity/defect centers at the interfaces, and the effects of hydrogenation on the Schottky barrier heights were also examined. Combining our previous study on the Pt/Si interfacial reaction, factors influencing the PtSi/Si Schottky barrier diode are discussed.
Resumo:
Up to now, in most of the research work done on the effect of hydrogen on a Schottky barrier, the hydrogen was introduced into the semiconductor before metal deposition. This letter reports that hydrogen can be effectively introduced into the Schottky barriers (SBs) of Au/n-GaAs and Ti/n-GaAs by plasma hydrogen treatment (PHT) after metal deposition on [100] oriented n-GaAs substrates. The Schottky barrier height (SBH) of a SB containing hydrogen shows the zero/reverse bias annealing (ZBA/RBA) effect. ZBA makes the SBH decrease and RBA makes it increase. The variations in the SBHs are reversible. In order to obtain obvious ZBA/RBA effects, selection of the temperature for plasma hydrogen treatment is important, and it is indicated that 100-degrees-C for Au/n-GaAs and 150-degrees-C for Ti/n-GaAs are suitable temperatures. It is concluded from the analysis of experimental results that only the hydrogen located at or near the metal-semiconductor interface, rather than the hydrogen in the bulk of either the semiconductor or the metal, is responsible for the ZBA/RBA effect on SBH.
Resumo:
To investigate the possible failure modes of the thermal barrier coating (TBC) used to protect the scramjet combustion chamber, the local heating via laser beam irradiation was utilized to simulate the service condition of high thermal flux and high temperature gradient. Firstly, the experimental method and process were described and the typical fracture morphology of the TBC under test were provided. Then, the theoretical and finite element modeling were carried out to study the temperature, deformation and stresses of the specimen when the top ceramic coat was subjected to local heating, and to demonstrate the mechanism on the failure of the TBC. It is revealed that the interface delamination shall appear and ultimately lead to the failure of the TBC under such thermal loading of local quick heating. According to the outcome of this study, the driving force of the interface delamination is influenced greatly by the key structural parameters and performance matching. Moreover, by utilizing the rules of the effects of these parameters on the fracture driving force, there is some possibility for the designer to optimize the performances of the TBC.
Resumo:
The shell correction is proposed in the improved isospin dependent quantum molecular dynamics (Im-IQMD) model, which plays an important role in heavy-ion fusion reactions near Coulomb barrier. By using the ImIQMD model, the static and dynamical fusion barriers, dynamical barrier distribution in the fusion reactions are analyzed systematically. The fusion and capture excitation functions for a series of reaction systems are calculated and compared with experimental data. It is found that the fusion cross sections for neutron-rich systems increase obviously, and the strong shell effects of two colliding nuclei result in a decrease of the fusion cross sections at the sub-barrier energies. The lowering of the dynamical fusion barriers favors the enhancement of the sub-barrier fusion cross sections, which is related to the nucleon transfer and the neck formation in the fusion reactions.
Resumo:
Within the dinuclear system model, the effects of the relative orientations of interacting deformed nuclei on the interaction potential energy surfaces, the evaporation residue cross sections of some cold fusion reactions leading to superheavy elements are investigated. The competition between fusion and quasifission is studied to show the effect of the orientation. It turns out that the belly-belly orientation is in favor of the production of superheavy nuclei, because in the case a barrier has suppressed the quasifission and thus helped fusion.
Resumo:
Lanthanum, zirconate (La2Zr2O7, LZ) coatings were prepared under four different deposition conditions by electron beam-physical vapor deposition (EB-PVD). The composition, crystal structure, surface and cross-sectional morphology, cyclic oxidation behavior of these coatings were studied. Elemental analysis indicates that the coating composition has partially deviated from the stoichiometry of pyrochlore, and the existence of excess La2O3 is also observed. The deviation could be reduced by properly controlling the electron beam current or by changing the ingot composition.
Effects of Y2O3 addition on the phase evolution and thermophysical properties of lanthanum zirconate
Resumo:
Lanthanum zirconate (La2Zr2O7, LZ) powders with the addition of various Y2O3 contents for potential thermal barrier coatings (TBCs) application were synthesized by solid-state reaction. The structure evolution, sintering-resistance and thermophysical properties of the synthesized powders and sintered ceramics were systematically studied. X-ray diffraction (XRD) results indicate that LZ containing 3-12 wt.% Y2O3 mainly keeps a pyrochlore-type structure, and two new phases of LaYO3 and Y0.18Zr0.82O1.91 are also detected. Raman spectra confirm that the higher the Y2O3 content, the easier is the formation of LaYO3.
Resumo:
The effects of doped fluorescent dye 4-(dicyanomethylene)-2-i-propyl-6-(1, 1, 7, 7-tetramethyljulolidyl-9-enyl)-4H-pyran (DCJTI) on the charge carrier injection, transport and electroluminescence (EL) performance in polyfluorene (PFO)-based polymer light-emitting diodes (PLEDs) were investigated by steady-state current-voltage (I-V) characteristics and transient EL measurements. A red EL from DCJTI was observed and the EL performance depended strongly on the DCJTI concentration. The analysis of the steady-state I-V characteristics at different DCJTI concentrations found that three regions was shown in the I-V characteristics, and each region was controlled by different processes depending on the applied electric field. The effect of the dopant concentration on the potential-barrier height of the interface is estimated using the Fowler-Nordheim model. The dopant concentration dependence of the current-voltage relationship indicated clearly the carrier trapping by the DCJTI molecules. The mobility in DCJTI: PFO changed significantly with the DCJTI concentration, and showed a nontrivial dependence on the doping level. The behavior may be understood in terms of the formation of an additional energy disorder due to potential fluctuation caused by the Coulomb interaction of the randomly distributed doping molecules.
Resumo:
Three kinds of organically modified Na+-montmorillonites (OMMTs), including two kinds of octadecylammonium modified montmorillonite with different contents of octadecylammonium and a kind of sodium dodecylsulfonate (SDSo) modified montmorillonite, were used to prepare polyamide 12 (PA12)/OMMT nanocomposites. Effects of the modifiers on degradation and fire retardancy of PA12/OMMT nanocomposites were investigated. Acid sites formed in cationic surfactant modified MMT via Hoffman decomposition could accelerate degradation of PA12 at high temperature. However, catalytic effect of the acid sites on carbonization of the degradation products promoted char barrier formation, which reduced heat release rate (HRR). Higher content of cationic surfactant in OMMT is beneficial to fire retardancy of PA12 nanocomposites and the dispersion states of OMMT have assistant effects. In contrast, Na+-montmorillonite (Na-MMT) and anionic surfactant modified MMT (a-MMT) could not form acid sites on the MMT layers; in this case, fire retardancy of PA12/Na-MMT appears to have no improvement and PA12/a-MMT appears to have limited improvement.