Type I collagen-mediated synthesis of noble metallic nanoparticles networks and the applications in Surface-Enhanced Raman Scattering and electrochemistry

In this paper, we demonstrated an effective enviromentally friendly synthesis route to prepare noble metallic (Au, Ag, Pt and Pd) nanoparticles (NPs) networks mediated by type I collagen in the absence of any seeds or surfactants. In the reactions, type I collagen served as stabilizing agent and assembly template for the synthesized metallic NPs. The hydrophobic interaction between collagen and mica interface as well as the hydrogen bonds between inter- and intra-collagen molecules play important roles in the formation of collagen-metallic NPs networks. The noble metallic NPs networks have many advantages in the applications of Surface-Enhanced Raman Scattering (SERS) and electrochemistry detection. Typically, the as-prepared Ag NPs networks reveal great Raman enhancement activity for 4-ATP, and can even be used to detect low concentration of DNA base, adenine.

Electrodeposition of platinum nanoclusters on type I collagen modified electrode and its electrocatalytic activity for methanol oxidation

We firstly reported a novel polymer matrix fabricated by type I collagen and polymers, and this matrix can be used as nanoreactors for electrodepositing platinum nanoclusters (PNCs). The type I collagen film has a significant effect on the growth of PNCs. The size of the platinum nanoparticles could be readily tuned by adjusting deposition time, potential and the concentration of electrolyte, which have been verified by field-emitted scanning electron microscopy (FE-SEM). Furthermore, cyclic voltammetry (CV) has demonstrated that the as-prepared PNCs can catalyze methanol directly with higher activity than that prepared on PSS/PDDA film, and with better tolerance to poisoning than the commercial E-TEK catalyst. The collagen-polymer matrix can be used as a general reactor to electrodeposit other metal nanostructures.

Quantifying Cell Binding Kinetics Mediated By Surface-Bound Blood Type B Antigen To Immobilized Antibodies

Cell adhesion is crucial to many biological processes, such as inflammatory responses, tumor metastasis and thrombosis formation. Recently a commercial surface plasmon resonance (SPR)-based BIAcore biosensor has been extended to determine cell binding mediated by surface-bound biomolecular interactions. How such cell binding is quantitatively governed by kinetic rates and regulating factors, however, has been poorly understood. Here we developed a novel assay to determine the binding kinetics of surface-bound biomolecular interactions using a commercial BIAcore 3000 biosensor. Human red blood cells (RBCs) presenting blood group B antigen and CM5 chip bearing immobilized anti-B monoclonal antibody (mAb) were used to obtain the time courses of response unit, or sensorgrams, when flowing RBCs over the chip surface. A cellular kinetic model was proposed to correlate the sensorgrams with kinetic rates. Impacts of regulating factors, such as cell concentration, flow duration and rate, antibody-presenting level, as well as pH value and osmotic pressure of suspending medium were tested systematically, which imparted the confidence that the approach can be applied to kinetic measurements of cell adhesion mediated by surface-bound biomolecular interactions. These results provided a new insight into quantifying cell binding using a commercial SPR-based BIAcore biosensor.

Vortex dislocation in wake-type flow caused by local spanwise nonuniformity

DNS of spatiotemporal evolution of a wake-type flow is performed. In the incoming flow, a local spanwise nonuniformity in momentum defect is initially imposed. Results show that the spanwise nonuniformity leads to a series of symmetric twist vortex dislocation in downstream of the flow. Vortex line variations and substantial transition of vorticity from spanwise to the streamwise and vertical directions clearly feature the generation of a vortex dislocation and the real vortex linking in the dislocation. Dynamical process and the mechanism responsible for the vortex dislocation are described.

A simple method to simulate shrinkage-induced cracking in cement-based composites by lattice-type modeling

A new numerical procedure is proposed to investigate cracking behaviors induced by mismatch between the matrix phase and aggregates due to matrix shrinkage in cement-based composites. This kind of failure processes is simplified in this investigation as a purely spontaneous mechanical problem, therefore, one main difficulty during simulating the phenomenon lies that no explicit external load serves as the drive to propel development of this physical process. As a result, it is different from classical mechanical problems and seems hard to be solved by using directly the classical finite element method (FEM), a typical kind of "load -> medium -> response" procedures. As a solution, the actual mismatch deformation field is decomposed into two virtual fields, both of which can be obtained by the classical FEM. Then the actual response is obtained by adding together the two virtual displacement fields based on the principle of superposition. Then, critical elements are detected successively by the event-by-event technique. The micro-structure of composites is implemented by employing the generalized beam (GB) lattice model. Numerical examples are given to show the effectiveness of the method, and detailed discussions are conducted on influences of material properties.

Vortex dislocations in wake-type flow induced by spanwise disturbances

Vortex dislocations in wake-type flow induced by three types of spanwise disturbances superimposed on an upstream velocity profile are investigated by direct numerical simulations. Three distinct modes of vortex dislocations and flow transitions have been found. A local spanwise exponential decay disturbance leads to the appearance of a twisted chainlike mode of vortex dislocation. A stepped spanwise disturbance causes a streamwise periodic spotlike mode of vortex dislocation. A spanwise sinusoidal wavy disturbance with a moderate waviness causes a strong unsteadiness of wake behavior. This unsteadiness starts with a systematic periodic mode of vortex dislocation in the spanwise direction followed by the spanwise vortex shedding suppressed completely with increased time and the near wake becoming a steady shear flow. Characteristics of these modes of vortex dislocation and complex vortex linkages over the dislocation, as well as the corresponding dynamic processes related to the appearance of dislocations, are described by examining the variations of vortex lines and vorticity distribution. The nature of the vortex dislocation is demonstrated by the substantial vorticity modification of the spanwise vortex from the original spanwise direction to streamwise and vertical directions, accompanied by the appearance of noticeable vortex branching and complex vortex linking, all of which are produced at the locations with the biggest phase difference or with a frequency discontinuity between shedding cells. The effect of vortex dislocation on flow transition, either to an unsteady irregular vortex flow or suppression of the Kaacutermaacuten vortex shedding making the wake flow steady state, is analyzed. Distinct similarities are found in the mechanism and main flow phenomena between the present numerical results obtained in wake-type flows and the experimental-numerical results of cylinder wakes reported in previous studies.

GPIb is involved in platelet aggregation induced by mucetin, a snake C-type lectin protein from Chinese habu (Trimeresurus mucrosquamatus) venom

Mucetin (Trimeresurus mucrosquamatus venom activator, TMVA) is a potent platelet activator purified from Chinese habu (Trimeresurus mucrosquamatus) venom. It belongs to the snake venom heterodimeric C-type lectin family and exists in several multimeric forms. We now show that binding to platelet glycoprotein (GP) lb is involved in mucetin-induced platelet aggregation. Antibodies against GPIb as well as the GPIb-blocking C-type lectin echicetin inhibited mucetin-induced platelet aggregation. Binding of GPIb was confirmed by affinity chromatography and Western blotting. Antibodies against GPVI inhibited convulxin- but not mucetin-induced aggregation. Signalling by mucetin involved rapid tyrosine phosphorylation of a number of proteins including Syk, Src, LAT and PLCgamma2. Mucetininduced phosphorylation of the Fcgamma chain of platelet was greatly promoted by inhibition of alpha(llb)beta(3) by the peptidomimetic EMD 132338, suggesting that phosphatases downstream Of alpha(llb)beta(3) activation are involved in dephosphorylation of Fcgamma. Unlike other multimeric snake C-type lectins that act via GPIb and only agglutinate platelets, mucetin activates alpha(llb)beta(3). Inhibition Of alpha(llb)beta(3) strongly reduced the aggregation response to mucetin, indicating that activation Of alpha(llb)beta(3) and binding of fibrinogen are involved in mucetin-induced platelet aggregation. Apyrase and aspirin also inhibit platelet aggregation induced by mucetin, suggesting that ADP and thromboxaneA(2) are involved in autocrine feedback. Sequence and structural comparison with closely related members of this protein family point to features that may be responsible for the functional differences.

Hole concentration test of p-type GaN by analyzing the spectral response of p-n(+) structure GaN ultraviolet photodetector

A new method to test the hole concentration of p-type GaN is proposed, which is carried out by analyzing the spectral response of p-n(+) structure GaN ultraviolet photodetector. It is shown that the spectral response of the photodetector changes considerably with reversed bias. It is found that the difference between photodetector's quantum efficiency at two wavelengths, i.e. 250 and 361 nm, varies remarkably with increasing reversed bias. According to the simulation calculation, the most characteristic change occurs at a reversed voltage under which the p-GaN layer starts to be completely depleted. Based on this effect the carrier concentration of p-GaN can be derived.

Low threshold current density 1.5 mu m strained-MQW laser by n-type modulation-doping

1.5 mu m. n-type modulation-doping InGaAsP/InGaAsP strained multiple quantum wells grown by low pressure metalorganic chemistry vapor decomposition technology is reported for the first time in the world. N-type modulation-doped lasers exhibit much lower threshold current densities than conventional lasers with undoped barrier layers. The lowest threshold current density we obtained was 1052.5 A/cm(2) for 1000 mu m long lasers with seven quantum wells. The estimated threshold current density for an infinite cavity length was 94.72A/cm(2)/well, reduced by 23.3% compared with undoped barrier lasers. The n-type modulation doping effects on the lasing characteristics in 1.5 mu m devices have been demonstrated.

p-type Zn1-xMgxO films with Sb doping by radio-frequency magnetron sputtering

Sb-doped Zn1-xMgxO films were grown on c-plane sapphire substrates by radio-frequency magnetron sputtering. The p-type conduction of the films (0.05 <= x <= 0.13) was confirmed by Hall measurements, revealing a hole concentration of 10(15)-10(16) cm(-3) and a mobility of 0.6-4.5 cm(2)/V s. A p-n homojunction comprising an undoped ZnO layer and an Sb-doped Zn0.95Mg0.05O layer shows a typical rectifying characteristic. Sb-doped p-type Zn1-xMgxO films also exhibit a changeable wider band gap as a function of x, implying that they can probably be used for fabrication of ZnO-based quantum wells and ultraviolet optoelectronic devices. (c) 2006 American Institute of Physics.

As-doped p-type ZnO films by sputtering and thermal diffusion process

As-doped p-type ZnO films were grown on GaAs by sputtering and thermal diffusion process. Hall effect measurements showed that the as-grown films were of n-type conductivity and they were converted to p-type behavior after thermal annealing. Moreover, the hole concentration of As-doped p-type ZnO was very impressible to the oxygen ambient applied during the annealing process. In addition, the bonding state of As in the films was investigated by x-ray photoelectron spectroscopy. This study not only demonstrated an effective method for reliable and reproducible p-type ZnO fabrication but also helped to understand the doping mechanism of As-doped ZnO. (c) 2006 American Institute of Physics.

Study on Mg memory effect in npn type AlGaN/GaN HBT structures grown by MOCVD

AlGaN/GaN npn heterojunction bipolar transistor structures were grown by low-pressure MOCVD. Secondary ion mass spectroscopy (SIMS) measurements were carried out to study the Mg memory effect and redistribution in the emitter-base junction. The results indicated that there is a Mg-rich film formed in the ongrowing layer after the Cp2Mg source is switched off. The Mg-rich film can be confined in the base section by switching off the Cp2Mg source for appropriate time before the end of base growth. Low temperature growth of the undoped GaN spacer suppresses the Mg redistribution from Mg rich film. The delay rate of the Mg profile in sample C with spacer growing in low temperature is about 56 nm/decade, which becomes sharper than 80 nm/decade of the samples A and B without low temperature spacer. (C) 2005 Elsevier Ltd. All rights reserved.

P-doped p-type ZnO films deposited on Si substrate by radio-frequency magnetron sputtering

P-doped ZnO films were deposited on n-Si substrate by radio-frequency magnetron sputtering. Hall measurements revealed that the films annealed in situ at 750 degrees C in an oxygen ambient at a pressure of 1.3x10(-3)-3.9x10(-3) Pa showed p-type behavior with a hole concentration of 2.7x10(16)-2.2x10(17) cm(-3), a mobility of 4-13 cm(2)/V s, and a resistivity of 10.4-19.3 Omega cm. Films annealed at 750 degrees C in a vacuum or in oxygen ambient at higher pressures (5.2x10(-3) and 6.5x10(-3) Pa) showed n-type behavior. Additionally, the p-ZnO/n-Si heterojunction showed a diodelike I-V characteristic. Our results indicate that P-doped p-type ZnO films can be obtained by annealing in oxygen ambient at very low pressures. (c) 2006 American Institute of Physics.