A novel polarization-insensitive semiconductor optical amplifier structure with large 3dB bandwidth

A novel approach to achieving a polarization-insensitive semiconductor optical amplifier is presented. The active layer consists of graded tensile strained bulk-like structure. which can not only enhance TM mode material gain and further realize polarization-insensitivity, but also get a large 3dB bandwidth due to different strain introduced into the active layer. 3dB bandwidth more than 40nm. 65nm has been obtained in die experiment and theory, respectively. The characteristics of such polarization insensitive structure have been analyzed, The influence of the amount of strain and of the thickness of strain layer on the polarization insensitivity has been discussed.

大气季节内振荡对东亚夏季风活动的影响研究

利用ERA40逐日再分析资料、NCEP/NCAR2逐日再分析资料、中国740个测站日降水资料、上海台风研究所提供的西太平洋热带气旋资料、Kaplan等重建的月平均SSTA资料、NOAA逐日长波辐射（OLR）等资料，应用离散功率谱分析、带通滤波、EOF分析等统计方法，研究了东亚夏季风(EASM）的移动特征、东亚地区季节内振荡(ISO)的基本特征、季节内振荡对东亚夏季风活动的影响、季节内振荡对东亚夏季风异常活动的影响机理。主要结论如下： （1）综合动力和热力因素定义了可动态描述东亚夏季风移动和强度的指数，并利用该指数研究了东亚夏季风的爆发和移动的季节内变化及其年际和年代际变化特征。研究发现，气候平均东亚夏季风前沿分别在28候、33候、36候、38候、40候、44候出现了明显的跳跃。东亚夏季风活动具有显著的年际变率，主要由于季风前沿在某些区域异常停滞和突然跨越北跳或南撤引起，造成中国东部旱涝灾害频繁发生。东亚夏季风的活动具有明显的年代际变化，在1965年、1980年、1994年发生了突变，造成中国东部降水由“南旱北涝”向“南涝北旱”的转变。 （2）东亚季风区季节内变化具有10~25d和30~60d两个波段的季节内振荡周期，以30-60d为主。存在三个主要低频模态，第一模态主要表征了EASM在长江中下游和华北地区活动期间的低频形势；第二模态印度洋-菲律宾由低频气旋式环流控制，主要表现了ISO在EASM爆发期间的低频形势；第三模态主要出现在EASM在华南和淮河活动期间的低频形势。第一模态和第三模态是代表东亚夏季风活动异常的主要低频形势。 （3）热带和副热带地区ISO总是沿垂直切变风的垂直方向传播。因此，在南海-菲律宾东北风垂直切变和副热带西太平洋北风垂直切变下，大气热源激发菲律宾附近交替出现的低频气旋和低频反气旋不断向西北传播，副热带西太平洋ISO以向西传播为主。中高纬度地区，乌拉尔山附近ISO以向东、向南移动或局地振荡为主；北太平洋中部ISO在某些情况下向南、向西传播。 （4）季风爆发期，伴随着热带东印度洋到菲律宾一系列低频气旋和低频反气旋， 冷空气向南输送，10~25天和30~60天季节内振荡低频气旋同时传入南海加快了南海夏季风的爆发。在气候态下，ISO活动表现的欧亚- 太平洋（EAP）以及太平洋-北美（PNA）低频波列分布特征(本文提出的EAP和PNA低频波列与传统意义上的二维定点相关得到的波列不同)。这种低频分布形式使得欧亚和太平洋中高纬度的槽、脊及太平洋副热带高压稳定、加强，东亚地区的低频波列则成为热带和中高纬度ISO相互作用影响东亚夏季风活动的纽带。不同的阶段表现不同的低频模态，30~60d低频模态的转变加快了EASM推进过程中跳跃性；30-60d低频模态的维持使得EASM前沿相对停滞。 （5）30-60d滤波场，菲律宾海域交替出现的低频气旋和低频反气旋不断向西北传播到南海-西太平洋一带。当南海-西太平洋地区低频气旋活跃时，季风槽加强、东伸，季风槽内热带气旋（TC）频数增加；当南海-西太平洋低频反气旋活跃时，季风槽减弱、西退，TC处于间歇期，生成位置不集中。 （6）在El Nino态下，大气季节内振荡偏弱，北传特征不明显，但ISO由中高纬度北太平洋中部向南和副热带西太平洋向西的传播特征显著，东亚地区ISO活动以第三模态为主，EASM集中停滞在华南和淮河流域，常伴随着持续性区域暴雨的出现，易造成华南和江淮流域洪涝灾害，长江和华北持续干旱。在La Nina态下，大气季节内振荡活跃，且具有明显的向北传播特征，PNA低频波列显著，东亚地区ISO活动以第一模态单峰为主；EASM主要停滞在长江中下游和华北地区，这些地区出现异常持续强降水，华南和淮河流域多干旱；在El Nino态向La Nina态转换期，ISO活动以第一模态双峰为主，长江中下游常常出现二度梅。

Size-dependent elastic properties of Ni nanofilms by molecular dynamics simulation

Size-dependent elastic properties of Ni nanofilms are investigated by molecular dynamics ( MD) simulations with embedded atom method (EAM). The surface effects are considered by calculating the surface relaxation, surface energy, and surface stress. The Young's modulus and yield stress are obtained as functions of thickness and crystallographic orientation. It is shown that the surface relaxation has important effects on the the elastic properties at nanoscale. When the surface relaxation is outward, the Young's modulus decreases with the film thickness decreasing, and vice versa. The results also show that the yield stresses of the films increase with the films becoming thinner. With the thickness of the nanofilms decreasing, the surface effects on the elastic properties become dominant.

The surface- and size-dependent elastic moduli of nanostructures

A theoretical model is presented to investigate the size-dependent elastic moduli of nanostructures with the effects of the surface relaxation surface energy taken into consideration. At nanoscale, due to the large ratios of the surface-to-volume, the surface effects, which include surface relaxation surface energy, etc., can play important roles. Thus, the elastic moduli of nanostructures become surface- and size-dependent. In the research, the three-dimensional continuum model of the nanofilm with the surface effects is investigated. The analytical expressions of five nonzero elastic moduli of the nanofilm are derived, and then the dependence of the elastic moduli is discussed on the surface effects and the characteristic dimensions of nanofilms.

Molecular dynamics simulation of adhesion forces in a dipalmitoylphosphatidylcholine membrane

Adhesion forces of Dipalmitoylphosphatidylcholine ( DPPC) membrane in the gel phase are investigated by molecular dynamics ( MD) simulation. In the simulations, individual DPPC molecules are pulled out of DPPC membranes with different rates and we get the maximum adhesion forces of DPPC membrane. We find that the maximum adhesion forces increase with pull rate, from about 400 to 700 pN when pull rates are from 0.001 to 0.03 nm/ps. We analyze the relationship between pull rate and adhesion forces of different origins using Brownian dynamics and notice that viscosity of solvent plays an important role in adhesion forces. Then we simulate the motion of a single DPPC molecule in solvent and it elucidates that the maximum drag force is almost linear with respect to the pull rate. We use Stokes' relation to describe the motion of a single DPPC molecule and deduce the effective length of a DPPC molecule. Conformational analyses indicate that the free energy variation of a DPPC molecule inside and outside of the DPPC membrane is an essential part of adhesion energy.

Low Power Integrated Circuits for Wireless Neural Recording Applications

A group of prototype integrated circuits are presented for a wireless neural recording micro-system. An inductive link was built for transcutaneous wireless power transfer and data transmission. Power and data were transmitted by a pair of coils on a same carrier frequency. The integrated receiver circuitry was composed of a full-wave bridge rectifier, a voltage regulator, a date recovery circuit, a clock recovery circuit and a power detector. The amplifiers were designed with a limited bandwidth for neural signals acquisition. An integrated FM transmitter was used to transmit the extracted neural signals to external equipments. 16.5 mW power and 50 bps - 2.5 Kbps command data can be received over 1 MHz carrier within 10 mm. The total gain of 60 dB was obtained by the preamplifier and a main amplifier at 0.95Hz - 13.41 KHz with 0.215 mW power dissipation. The power consumption of the 100 MHz ASK transmitter is 0.374 mW. All the integrated circuits operated under a 3.3 V power supply except the voltage regulator.

Fast Locking and High Accurate Current Matching Phase-Locked Loop

In this paper, a charge-pump based phase-locked loop (CPLL) that can achieve fast locking and tiny deviation is proposed and analyzed. A lock-aid circuit is added to achieve fast locking of the CPLL. Besides, a novel differential charge pump which has good current matching characteristics and a PFD with delay cell has been used in this PLL. The proposed PILL circuit is designed based on the 0.35um 2P4M CMOS process with 3.3V/5V supply voltage. HSPICE simulation shows that the lock time of the proposed CPLL can be reduced by over 72% in comparison to the conventional PILL and its charge pump sink and source current mismatch is only 0.008%.

Fabrication of improved FD SOIMOSFETs for suppressing edge effect

FD SOI MOSFETs with MESA and Irradiated FD SOI MOSFETs with LOCOS isolation usually show the edge effect, that is, the leakage current called hump is generated in the subthreshold region. According to different reasons for generating the edge effect, rounded corner process and BTS structure are applied to improve device performance. The results indicate that the above two methods are effective to reduce the edge effect and qualified devices are fabricated successfully.

Monostable-Bistable Transition Logic Element (MOBILE) Model for Single-Electron Transistors

The traditional monostable-bistable transition logic element (MOBILE) structure is usually composed of resonant tunneling diodes (RTD). This letter describes a new type MOBILE structure consisting of single-electron transistors (i.e. SET-MOBILE). The analytical model of single-electron transistors ( SET) has been considered three states (including an excited state) of the discrete quantum energy levels. The simulation results show negative differential conductance (NDC) characteristics in I-DS-V-DS curve. The SET-MOBILE utilizing NDC characteristics can successfully realize the basic logic functions as the RTD-MOBILE.

Evolution of wetting layers in InAs/GaAs quantum-dot system studied by reflectance difference spectroscopy

The wetting layers (WL) in InAs/GaAs quantum-dot system have been studied by reflectance difference spectroscopy (RDS), in which two structures related to the heavy-hole (HH) and light-hole (LH) transitions in the WL have been observed. The evolution and segregation behaviors of WL during Stranski-Krastanow (SK) growth mode have been studied from the analysis of the WL-related optical transition energies. It has been found that the segregation coefficient of Indium atoms varies linearly with the InAs amount in WL. In addition, the effect of the growth temperature on the critical thickness for InAs island formation has also been studied. The critical thickness defined by the appearance of InAs dots, which is determined by AFM, shows a complex variation with the growth temperature. However, the critical thickness determined by RDS is almost constant in the range of 510-540 degrees C.

High epitaxial growth rate of 4H-SiC using TCS as silicon precursor

High homoepitaxial growth of 4H-SiC has been performed in a home-made horizontal hot wall CVD reactor on n-type 4H-SiC 8 degrees off-oriented substrates in the size of 10 mm x 10 mm, using trichlorosilane (TCS) as silicon precursor source together with ethylene as carbon precursor source. Cross-section Scanning Electron Microscopy (SEM), Raman scattering spectroscopy and Atomic Force Microscopy (AFM) were used to determine the growth rate, structural property and surface morphology, respectively. The growth rate reached to 23 mu m/h and the optimal epilayer was obtained at 1600 degrees C with TCS flow rate of 12 seem in C/Si of 0.42, which has a good surface morphology with a low Rms of 0.64 nm in 10 mu mx10 mu m area.

Operational Optimization of GaN Thin Film Growth Employing Numerical Simulation in a Showerhead MOCVD Reactor

A detailed reaction-tran sport model was studied in a showerhead reactor for metal organic chemical vapor deposition of GaN film by using computational fluid dynamics simulation. It was found that flat flow lines without swirl are crucial to improve the uniformity of the film growth, and thin temperature gradient above the suscptor can increase the film deposition rate. By above-mentioned research, we can employ higher h (the distance from the susceptor to the inlet), P (operational pressure) and the rate of susceptor rotation to improve the film growth.

High Quality AlGaN Grown on GaN Template with HT-AlN Interlayer

When AlGaN is grown on GaN template, crack networks invariably generate when the thickness of the AlGaN layers over GaN exceeds the critical value. We used thin high temperature deposited AlN layer (HT-AlN) as the interlayer between GaN template and AlGaN epilayer which was very effective in eliminating the cracks in AlGaN epilayer. AlGaN layers with high Al mole fractions were also grown. Characterization showed that the crystalline quality of AlGaN epilayer was fairly good even when the At mole fraction was high.