49 resultados para Active power-factor correction

em Chinese Academy of Sciences Institutional Repositories Grid Portal


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A highly active anticomplement factor (cobra venom factor) from the venom of Naja kaouthia in South Yunnan, China was isolated by sequential column chromatography (SP-Sephadex-C25, Q Sepharose HP and Sephadex G-150). It displays strong anticomplement acti

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An three phase adjustable output voltage rectifier with constant power flow based on waveform gap patching principle is resented. By patching the gapes in the phase currents in parallel way as well as the ripple of the output voltage in series way, it implements the constant power flow from the three-phase line to the DC output without using any line frequency (and its harmonics) energy storage components. Principally, by treating only 22.4% power of the needed power output, this rectifier can supply constant power flow with adjustable output voltages without bring about any harmonic interferences to the power utility and achieve unite power factor.

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The 940 nm Al-free active region laser diodes and bars with a broad waveguide were designed and fabricated. The stuctures were grown by metal organic chemical vapour deposition. The devices show excellent performances. The maximum output power of 6.7 W in the 100 f^m broad-area laser diodes has been measured, and is 2. 5 times higher than that in the Al-containing active region laser diodes with a narrow waveguide and 1. 7 times higher than that in Al-free active region laser diodes with a narrow waveguide. The 19 % fill-factor laser diode bars emit 33 W, and they can operate at 15W with low degradation rates.

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The present work has been carried out to investigate on the average void fraction of gas/non-Newtonian fluids flow in downward inclined pipes. The influences of pipe inclination angle on the average void fraction were studied experimentally. A simple correlation, which incorporated the method of Vlachos et al. for gas/Newtonain fluid horizontal flow, the correction factor of Farooqi and Richardson and the pipe inclination angle, was proposed to predict the average void fraction of gas/non-Newtonian power-law stratified flow in downward inclined pipes. The correlation was based on 470 data points covering a wide range of flow rates for different systems at diverse angles. A good agreement was obtained between theory and data and the fitting results could describe the majority of the experimental data within ±20%.

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A highly active cobra venom factor (CVF) was isolated from the venom of Naja kaouthia by sequential column chromatography. It displays strong anticomplementary activity, and has 1515 U of anti complementary activity per mg protein. A single dose of 0.1 mg/kg CVF given i.v. to rats completely abrogated complement activity for nearly 5 days. Given 0.02 mg/kg of CVF. the complement activity of rats was reduced by more than 96.5% in 6 It. In guinea pig-to-rat heart transplant model, rats treated with a single dose of 0.05 mg/kg CVF had significantly prolonged xenograft survival (56.12 +/- 6.27 h in CVF-treated rats vs. 0.19 +/- 0.07 h in control rats, P < 0.001). (C) 2003 Elsevier Ltd. All rights reserved.

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High-power and broadband quantum-dot (QD) superluminescent light-emitting diodes are realized by using a combination of self-assembled QDs with a high density, large inhomogeneous broadening, a tapered angled pump region, and etched V groove structure. This broad-area device exhibits greater than 70-nm 3-dB bandwidth and drive current insensitive emission spectra with 100-mW output power under continuous-wave operation. For pulsed operation, greater than 200-mW output power is obtained.

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Usually GaAs/AlGaAs is utilized as an active layer material in laser diodes operating in the spectral range of 800 850 nm. In this work, in addition to a traditional unstrained GaAs/AlGaAs distributed feedback (DFB) laser diode, a compressively strained InGaAlAs/AlGaAs DFB laser diode is numerically investigated in characteristic. The simulation results show that the compressively strained DFB laser diode has a lower transparency carrier density, higher gain, lower Auger recombination rate, and higher stimulated recombination rate, which lead to better a device performance, than the traditional unstrained GaAs/AlGaAs DFB laser diode.

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A novel semiconductor laser structure is put forward to resolve the major difficulties of high power laser diodes. In this structure, several active regions are cascaded by tunnel junctions to form a large optical cavity and to achieve super high efficiency. This structure can solve the problems of catastrophic optical damage of facet, thermal damage and poor light beam quality effectively. Low-pressure metalorganic chemical vapor deposition method is adopted to grow the novel semiconductor laser structures, which are composed of Si:GaAs/C:GaAs tunnel junctions, GaAs/InGaAs strain quantum well active regions. External differential quantum efficiency as high as 2.2 and light power output of 2.5 W per facet (under 2A drive current) are achieved from an uncoated novel laser device with three active regions.

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In this paper, a low-power, highly linear, integrated, active-RC filter exhibiting a multi-standard (IEEE 802.11a/b/g and DVB-H) application and bandwidth (3MHz, 4MHz, 9.5MHz) is present. The filter exploits digitally-controlled polysilicon resister banks and an accurate automatic tuning scheme to account for process and temperature variations. The automatic frequency calibration scheme provides better than 3% corner frequency accuracy. The Butterworth filter is design for receiver (WLAN and DVB-H mode) and transmitter (WLAN mode). The filter dissipation is 3.4 mA in RX mode and 2.3 mA (only for one path) in TX mode from 2.85-V supply. The dissipation of calibration consumes 2mA. The circuit has been fabricated in a 0.35um 47-GHz SiGe BiCMOS technology, the receiver and transmitter occupy 0.28-mm(2) and 0.16-mm(2) (calibration circuit excluded), respectively.

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A new active antenna structure with applications in quasi-optical power combining is described. The active antenna combines a slotline FET oscillator with a notch antenna. The new structure was successfully used to create both E-plane and H-plane linear arrays as well as a 2-D array. Preliminary results of radiation patterns and the power combining efficiencies of the arrays are discussed.

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We derive formulas for the optical confinement factor Gamma from Maxwell's equations for TE and TM modes in the slab waveguide. The numerical results show that the formulas yield correct mode gain for the modes propagating in the waveguide. We also compare the formulas with the standard definition of Gamma as the ratio of power flow in the active region to the total power flow. The results show that the standard definition will underestimate the difference of optical confinement factors between TE and TM modes, and will underestimate the difference of material gains necessary for polarization insensitive semiconductor laser amplifiers. It is important to use correct optical confinement factors for designing polarization insensitive semiconductor laser amplifiers. For vertical cavity surface-emitting lasers, the numerical results show that Gamma can be defined as the proportion of the product of the refractive index and the squared electric field in the active region. (C) 1996 American Institute of physics.

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Target transformation factor analysis was used to correct spectral interference in inductively coupled plasma atomic emission spectrometry (ICP-BES) for the determination of rare earth impurities in high purity thulium oxide. Data matrix was constructed with pure and mixture vectors and background vector. A method based on an error evaluation function was proposed to optimize the peak position, so the influence of the peak position shift in spectral scans on the determination was eliminated or reduced. Satisfactory results were obtained using factor analysis and the proposed peak position optimization method.

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Correction of spectral overlap interference in inductively coupled plasma atomic emission spectrometry by factor analysis is attempted. For the spectral overlap of two known lines, a data matrix can be composed from one or two pure spectra and a spectrum of the mixture. The data matrix is decomposed into a spectra matrix and a concentration matrix by target transformation factor analysis. The component concentration of interest in a binary mixture is obtained from the concentration matrix and interference from the other component is eliminated. This method is applied to correcting spectral interference of yttrium on the determination of copper and aluminium: satisfactory results are obtained. This method may also be applied to correcting spectral overlap interference for more than two lines. Like other methods of correcting spectral interferences, factor analysis can only be used for additive spectral overlap. Results obtained from measurements on copper/yttrium mixtures with different white noise added show that random errors in measurement data do not significantly affect the results of the correction method.

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In this paper we discuss coupling processes between a magnetic field and an unsteady plasma motion, and analyze the features of energy storage and conversions in active region. It is pointed out that the static force-free field is insufficient for a discussion of storage processes, and also the pure unsteady plasma rotation is not a perfect approach. In order to analyze the energy storage, we must consider the addition of poloidal plasma motion. The paper shows that because the unsteady poloidal flow is added and coupling occurs between the magnetic field and both the toroidal and the poloidal plasma flows, an unsteady process is maintained which changes the force-free factor with time. Hence, the energy in the lower levels can be transferred to the upper levels, and a considerable energy can be stored in the active region. Finally, another storage process is given which is due to the pure poloidal flow. The article shows that even if there is no twisted magnetic line of force, the energy in the lower levels may still be transferred to the upper levels and stored there.