Loschmidt echo and Berry phase of a quantum system coupled to an XY spin chain: Proximity to a quantum phase transition

We study the Loschmidt echo (LE) of a coupled system consisting of a central spin and its surrounding environment described by a general XY spin-chain model. The quantum dynamics of the LE is shown to be remarkably influenced by the quantum criticality of the spin chain. In particular, the decaying behavior of the LE is found to be controlled by the anisotropy parameter of the spin chain. Furthermore, we show that due to the coupling to the spin chain, the ground-state Berry phase for the central spin becomes nonanalytical and its derivative with respect to the magnetic parameter lambda in spin chain diverges along the critical line lambda=1, which suggests an alternative measurement of the quantum criticality of the spin chain.

Pressure-induced phase transition of nanocrystalline zinc sulfide

In situ energy dispersive X-ray diffraction measurements on nanocrystalline zinc sulfide have been performed by using diamond anvil cell with synchrotron radiation. There is a phase transition which the ultimate structure is rocksalt when the pressure is up to 16.0GPa. Comparing the structure of body materials, the pressure of the phase transition of nano zinc sulfide is high. We fit the: Birch-Murnaghan equation of state and obtained its ambient pressure bulk modulus and its pressure derivative. The bulk modulus of nanocrystalline zinc sulfide is higher than that of body materials, it indicate that the rigidity of nanocrystalline zinc sulfide is high.

Electrical and Optical Phase Transition Properties of Nano Vanadium Dioxide Thin Films

Nano-vanadium dioxide thin films were prepared through thermal annealing vanadium oxide thin films deposited by dual ion beam sputtering. The nano-vanadium dioxide thin films changed its state from semiconductor phase to metal phase through heating by homemade system. Four point probe method and Fourier transform infrared spectrum technology were employed to measure and anaylze the electrical and optical semiconductor-to-metal phase transition properties of nano-vanadium dioxide thin films, respectively. The results show that there is an obvious discrepancy between the semiconductor-to-metal phase transition properties of electrical and optical phase transition. The nano-vanadium dioxide thin films' phase transiton temperature defined by electrical phase transiton property is 63 degrees C, higher than that defined by optical phase transiton property at 5 mu m, 60 degrees C; and the temperature width of electrical phase transition duration is also wider than that of optical phase transiton duration. The semiconductor-to-metal phase transiton temperature defined by optical properties increases with increasing wavelength in the region of infrared wave band, and the occuring temperature of phase transiton from semiconductor to metal also increases with wavelength increasing, but the duration temperature width of transition decreases with wavelength increasing. The phase transition properties of nano-vanadium dioxide thin film has obvious relationship with wavelength in infrared wave band. The phase transition properties can be tuned through wavelength in infrared wave band, and the semiconductor-to-metal phase transition properties of nano vanadiium dioxide thin films can be better characterized by electrical property.

Microstructure of the silicon film prepared near the phase transition regime from amorphous to nanocrystalline

A kind of hydrogenated diphasic silicon films has been prepared by a new regime of plasma enhanced chemical vapor deposition (PECVD) near the phase transition regime from amorphous to nanocrystalline. The microstructural properties of the films have been investigated by the micro-Raman and Fourier transformed Infrared (FT-IR) spectra and atom force microscopy (AFM). The obtained Raman spectra show not only the existence of nanoscaled crystallites, but also a notable improvement in the medium-range order of the diphasic films. For the FT-IR spectra of this kind of films, it notes that there is a blueshift in the Si-H stretching mode and a redshift in the Si-H wagging mode in respect to that of typical amorphous silicon film. We discussed the reasons responsible for these phenomena by means of the phase transition, which lead to the formation of a diatomic hydrogen complex, H-2* and their congeries.

Phase transition to color-flavor-locked matter and condensation of Goldstone bosons in neutron star matter

Deconfinement phase transition and condensation of Goldstone bosons in neutron star matter are investigated in a chiral hadronic model (also referred as to the FST model) for the hadronic phase (HP) and in the color-flavor-locked (CFL) quark model for the deconfined quark phase. It is shown that the hadronic-CFL mixed phase (MP) exists in the center of neutron stars with a small bag constant, while the CFL quark matter cannot appear in neutron stars when a large bag constant is taken. Color superconductivity softens the equation of state (EOS) and decreases the maximum mass of neutron stars compared with the unpaired quark matter. The K-0 condensation in the CFL phase has no remarkable contribution to the EOS and properties of neutron star matter. The EOS and the properties of neutron star matter are sensitive to the bag constant B, the strange quark mass m(s) and the color superconducting gap Delta. Increasing B and m(s) or decreasing Delta can stiffen the EOS which results in the larger maximum masses of neutron stars.

Friction phenomena and phase transition in the underdamped two-dimensional Frenkel-Kontorova model

Locked-to-sliding phase transition has been studied in the driven two-dimensional Frenkel-Kontorova model with the square symmetric substrate potential. It is found that as the driving force increases, the system transfers from the locked state to the sliding state where the motion of particles is in the direction different from that of driving force. With the further increase in driving force, at some critical value, the particles start to move in the direction of driving force. These two critical forces, the static friction or depinning force, and the kinetic friction force for which particles move in the direction of driving force have been analyzed for different system parameters. Different scenarios of phase transitions have been examined and dynamical phases are classified. In the case of zero misfit angle, the analytical expressions for static and kinetic friction force have been obtained.

A reversibly tunable colloidal photonic crystal via the infiltrated solvent liquid-solid phase transition

A reversibly tunable colloidal photonic crystal between two stop bands was realized by a liquid-solid phase transition of liquid infiltrated into the air voids of silica opals. The difference of the peak wavelengths of the two stop bands was dependent on the diameter of the silica opals and the difference of the refractive index of the filled solvent between the solid and liquid state. The reversibly tunable photonic crystals have good stability and reproducibility.

Phase transition behavior and structure of the thermotropic liquid crystal 6-{[(4 '-{[(undecyl)carbonyl]oxy}biphenyl-4yl)carbonyl]oxy}-1-hexyne

The phase transition behaviors and corresponding structures of 6-{[(4'-([(undecyl)carbonyl]oxy)biphenyl-4yl)carbonyl]oxyl-l-hexyne (A4EE11) were investigated using differential scanning calorimetry (DSC), polarizing optical microscopy (POM) and wide angle X-ray diffraction (WAXD). In comparison with the published homologues, 5- [(4'-heptoxy-biphenyl-4-yl)carbonyl]oxyl-1-pentyne (A3EO7) which shows a monotropic smectic A (SmA) phase and a metastable monotropic smectic C (SmC) phase; 5-{ [(4'-heptoxybiphenyl-4-yl)oxy]carbonyl)- I-pentyne (A3E'O7) that exhibits three enantiotropic stable liquid crystalline (LC) phases, SmA phase, SmC phase and smectic X (SmX) phase; 5-{[(4'-heptoxy-biphenyl-4-yl)carbonyl]oxy}-1-undecyne (A9EO7) which has a monotropic SmA phase and a metastable crystal phase, A4EE11 integrates the enantiotropy, monotropy and metastability of the LC phases of those three compounds. Upon cooling from isotropic state to room temperature, in the temperature range of 62.0 to 58.5 degrees C, A4EE11 shows an enantiotropic smectic A (SmA) phase with a layer spacing d=32.69 angstrom.

Structural phase transition in the layered perovskite compound BaTb2Mn2O7

A distorted layered perovskite compound BaTb2Mn2O7 was synthesized by the solid state reaction in pure argon. There is a structural phase transition in the BaTb2Mn2O7 compound. The phase transition was characterized by the DSC and high temperature Xray diffraction. The heat capacity of BaTb2Mn2O7 was calculated. The thermal anomaly corresponding to the phase transition was observed at about 740K. The lattice parameters were calculated by the CELL program for BaTb2Mn2O7, It has Tb-type orthorhombic symmetry with a = 0.3908 nm, b = 0.3866 nm, c = 2.0163 nm, and space group Immm at room temperature. With the increase of temperature, the lattice parameters gradually increase until 673K. From 723K to 973K, the compound translates to tetragonal with a = 0.39078 nm, c = 2.0277 nm and S.G. I4/mmm. This result is fairly in accordance with that of heat capacity.

Displacive To Order-Disorder Two-Step Phase Transition Model For Para-Ferroelectric Transition

Two-step phase transition model, displacive to order-disorder, is proposed. The driving forces for these two transitions are fundamentally different. The displacive phase transition is one type of the structural phase transitions. We clearly define the structural phase transition as the symmetry broking of the unit cell and the electric dipole starts to form in the unit cell. Then the dipole-dipole interaction takes place as soon as the dipoles in unit cells are formed. We believe that the dipole-dipole interaction may cause an order-disorder phase transition following the displacive phase transition. Both structural and order-disorder phase transition can be first-order or second-order or in between. We found that the structural transition temperatures can be lower or equal or higher than the order-disorder transition temperature. The para-ferroelectric phase transition is the combination of the displacive and order-disorder phase transitions. It generates a variety of transition configurations along with confusions. In this paper, we discuss all these configurations using our displacive to order-disorder two-step phase transition model and clarified all the confusions.

Intrinsic spin hall effect induced by quantum phase transition in HgCdTe quantum wells

The spin Hall effect can be induced by both extrinsic impurity scattering and intrinsic spin-orbit coupling in the electronic structure. The HgTe/CdTe quantum well has a quantum phase transition where the electronic structure changes from normal to inverted. We show that the intrinsic spin Hall effect of the conduction band vanishes on the normal side, while it is finite on the inverted side. By tuning the Cd content, the well width, or the bias electric field across the quantum well, the intrinsic spin Hall effect can be switched on or off and tuned into resonance under experimentally accessible conditions.

Disentanglement of two qubits coupled to an XY spin chain: Role of quantum phase transition

We study the disentanglement evolution of two spin qubits which interact with a general XY spin-chain environment. The dynamical process of the disentanglement is numerically and analytically investigated in the vicinity of a quantum phase transition (QPT) of the spin chain in both weak and strong coupling cases. We find that the disentanglement of the two spin qubits may be greatly enhanced by the quantum critical behavior of the environmental spin chain. We give a detailed analysis to facilitate the understanding of the QPT-enhanced decaying behavior of the coherence factor. Furthermore, the scaling behavior in the disentanglement dynamics is also revealed and analyzed.

Electric field driven quantum phase transition between band insulator and topological insulator

We demonstrate theoretically that electric field can drive a quantum phase transition between band insulator to topological insulator in CdTe/HgCdTe/CdTe quantum wells. The numerical results suggest that the electric field could be used as a switch to turn on or off the topological insulator phase, and temperature can affect significantly the phase diagram for different gate voltage and compositions. Our theoretical results provide us an efficient way to manipulate the quantum phase of HgTe quantum wells.