INFLUENCES OF ALLOY DISORDER AND INTERFACE ROUGHNESS ON OPTICAL-SPECTRA OF INGAAS/GAAS STRAINED-LAYER QUANTUM-WELLS

We present studies of alloy composition and layer thickness dependences of excitonic linewidths in InGaAs/GaAs strained-layer quantum wells grown by MBE, using both photoluminescence and optical absorption. It is observed that linewidths of exciton spectra increase with indium content and well size. Using the virtual crystal approximation, the experimental data are analyzed. The results obtained show that the alloy disorder is the dominant mechanism for line broadening at low temperature. In addition, it is found that the absorption spectra related to light hole transitions have varied from a peak to a step-like structure as temperature increases. This behavior can be understood by the indirect space transitions of light holes.

Corrosion resistance of hot-dipped zinc and zinc alloy coated sheet steels under offshore atmospheric environment

The application of hot-dipped zinc and zinc-aluminum alloy coatings were introduced. Exposure tests of the steels with these coatings were conducted in the offshore atmosphere in Qingdao and Xiamen for 12 years separately. Effects of the coating thickness, alloy composition and atmospheric environment on the corrosion performance were studied. Results of the onsite exposure tests were compared with the results of a previous indoor salt spray accelerated corrosion tests. The study supports that zinc-aluminum alloy coatings are useful in providing better corrosion resistance and can be further developed for future applications.

Microstructure and mechanical properties of a novel Zr-based bulk metallic glass composite

Zr48.5Cu46.5Al5 bulk metallic glass (BMG) composites with diameters of 3 and,4 mm were prepared through suction casting in an arc melting furnace by modulating the alloy composition around the monothetic BMG composition of the high glass forming ability. Microstructural characterization reveals that the composites contain micron-sized CuZr phase with martensite structure, as well as nano-sized Zr2Cu crystalline particles and Cu10Zr7 plate-like phase embedded in an amorphous matrix. Room temperature compression tests showed that the composites exhibited significant strain hardening and obvious plastic strain of 7.7% for 3 nun and 6.4% for 4 nun diameter samples, respectively.

Quasi-thermo dynamic analysis of MOVPE growth of GaxAlyIn1-x-yN

A quasi-thermodynamic model of metalorganic vapor phase epitaxy (MOVPE) growth of GaxAlyIn1-x-yN alloys has been proposed. In view of the complex growth behavior of GaxAlyIn1-x-yN, we focus our attention on the galliumrich quaternary alloys that are lattice matched to GaN, In0.15Ga0.85N or Al0.15Ga0.85N, which are widely used in the GaN-based optoelectronic devices. The relationship between GaAlInN alloy composition and input molar ratio of group III metalorganic compounds at various growth conditions has been calculated. The influence of growth temperature, nitrogen fraction in the carrier gas, input partial pressure of group III metalorganics, reactor pressure, V/III ratio and the decomposition rate of ammonia on the composition of deposited alloys are studied systematically. Based on these calculated results, we can find out the appropriate growth conditions for the MOVPE growth of GaxAlyIn1-x-yN alloy lattice matched to GaN, In0.15Ga0.85N or Al0.15Ga0.85N. (C) 2002 Elsevier Science B.V. All rights reserved.

BAND-STRUCTURE OF MG1-XZNXSYSE1-Y

The empirical pseudopotential method within the virtual crystal approximation is used to calculate the band structure of Mg1-xZnySySe1-y, which has recently been proved to be a potential semiconductor material for optoelectronic device applications in the blue spectral region. It is shown that MgZnSSe can be a direct or an indirect semiconductor depending on the alloy composition. Electron and hole effective masses are calculated for different compositions. Polynomial approximations are obtained for both the energy gap and the effective mass as functions of alloy composition at the GAMMA valley. This information will be useful for the future design of blue wavelength optoelectronic devices as well as for assessment of their properties.

LIQUID-PHASE EPITAXY GROWTH AND PROPERTIES OF GAINASSB/ALGAASSB/GASB HETEROSTRUCTURES

The GaInAsSb/AlGaAsSb/GaSb heterostructures were grown by the liquid phase epitaxy (LPE) technique. The materials were characterized by means of optical microscopy, electroprobe microanalysis (EPMA), double-crystal X-ray diffraction, capacitance-voltage (C-V) and Van der Pauw measurments, infrared absorption spectra, photoluminescence and laser Raman scattering. The results show that the materials have fine surface morphology, low lattice mismatch and good homogeneity. Room-temperature light-emitting diodes with an emission wavelength of 2.2-mu-m were obtained by using the GaInAsSb/AlGaAsSb DH structures.

A Numerical Model of Rapid Solidification Processing of Ni-Al Alloy in Planar Flow Casting

A numerical model has been developed for simulating the rapid solidification processing (RSP) of Ni-Al alloy in order to predict the resultant phase composition semi-quantitatively during RSP. The present model couples the initial nucleation temperature evaluating method based on the time dependent nucleation theory, and solidified volume fraction calculation model based on the kinetics model of dendrite growth in undercooled melt. This model has been applied to predict the cooling curve and the volume fraction of solidified phases of Ni-Al alloy in planar flow casting. The numerical results agree with the experimental results semi-quantitatively.

Amorphous Coatings Deposited on Aluminum Alloy by Plasma Electrolytic Oxidation

Amorphous [Al-Si-O] coatings were deposited on aluminum alloy by plasma electrolytic oxidation (PEO). The process parameters, composition, micrograph, and mechanical property of PEO amorphous coatings were investigated. It is found that the growth rate of PEO coatings reaches 4.44 mu m/min if the current density is 0.9 mA/mm(2). XRD results show that the PEO coatings are amorphous in the current density range of 0.3-0.9 mA/mm(2). EDS results show that the coatings are composed of O, Si and At elements. SEM results show that the coatings are porous. Nano indentation results show that the hardness of the coatings is about 3 - 4 times of that of the substrate, while the elastic modulus is about the same with the substrate. Furthermore, a formation mechanism of amorphous PEO coatings was proposed.

Fractography and Crack Initiation of Very-High-Cycle Fatigue for a High Carbon Low Alloy Steel

Very-High-Cycle Fatigue (VHCF) is the phenomenon of fatigue damage and failure of metallic materials or structures subjected to 108 cycles of fatigue loading and beyond. This paper attempts to investigate the VHCF behavior and mechanism of a high strength low alloy steel (main composition: C-1% and Cr-1.5%; quenched at 1108K and tempered at 453K). The fractography of fatigue failure was observed by optical microscopy and scanning electron microscopy. The observations reveal that, for the number of cycles to fatigue failure between 106 and 4108 cycles, fatigue cracks almost initiated in the interior of specimen and originated at non-metallic inclusions. An “optical dark area” (ODA) around initiation site is observed when fatigue initiation from interior. ODA size increases with the decrease of fatigue stress, and becomes more roundness. Fracture mechanics analysis gives the stress intensity factor of ODA, which is nearly equivalent to the corresponding fatigue threshold of the test material. The results indicate that the fatigue life of specimens with crack origin at the interior of specimen is longer than that with crack origin at specimen surface. The experimental results and the fatigue mechanism were further analyzed in terms of fracture mechanics and fracture physics, suggesting that the primary propagation of fatigue crack within the fish-eye local region is the main characteristics of VHCF.

Electrochemical Impedance Spectroscopy Of Peo Coating On Aluminum Alloy In Nacl Solution

Various Plasma Electrolytic Oxidation (PEO) ceramic coatings were prepared on LY12 aluminum alloy by adjusting the concentration of sodium silicate solution. Optical microscope (OM), XRD and EIS were used to study their morphology, composition and anti corrosion behavior in NaCl solution. Increasing concentration of sodium silicate leads to the increase of the total coating thickness while too high and too low concentration lead to the decrease of inner dense layer. The main composition of PEO coatings prepared in 20, 40 and above 60g/L concentration solution are correspondingly alumina, alumina with mullite, and amorphous phase. The corrosion resistance is determined by the inner dense layer. Increasing the thickness of inner dense layer can improve the anti-corrosion performance. PEO coating's corrosion resistance in acidic, alkaline and neutral NaCl solution is proved and the corrosion mechanism involved is also discussed.

Effect of layer thickness of immiscible alloy In0.52Al0.48As on the morphology of InAs nanostructure grown on In0.52Al0.48As/InP(001)

Thickness effect of immiscible alloy InAlAs as matrix layer on the morphology of InAs nanostructure grown on InAlAs/InP (0 0 1) by solid-source molecular-beam epitaxy has been studied. Experiments demonstrate that InAs nanostructure grown on thin InAlAs matrix layer forms randomly distributed quantum dot, whereas, grown on thick InAlAs matrix layer forms one-dimension ordered mixture of quantum wire and quantum dot. This drastic modification in the nanostructure morphology is attributed to the generation of composition modulation in the immiscible InAlAs alloy with the increase of the layer thickness. (C) 2004 Elsevier B.V. All rights reserved.

Effects of doping on the crystalline quality and composition distribution in InGaN/GaN structure grown by MOCVD

The effects of Si and Mg doping on the crystalline quality and In distribution in the InGaN films were studied by atomic force microscope (AFM), triple crystal X-ray diffraction (TCXRD) and Rutherford backscattering spectrometry (RBS). The undoped, Si-doped and Mg-doped InGaN films were grown by metalorganic chemical vapor deposition (MOCVD) on (0 0 0 1) sapphire substrates. The electronic concentration in the Si-doped InGaN is about 2 x 10(19) cm(-3). It is found that the crystalline quality and In distribution in InGaN is slightly affected by the Si doping. In the Mg doped-case, the hole concentration is about 4 x 10(18) cm(-3) after annealing treatment. The surface morphology and crystalline quality of the Mg-doped InGaN are deteriorated significantly compared with the undoped InGaN. The growth rate of Mg-doped InGaN is higher than the undoped InGaN. Mg doping enhances the In incorporation in the InGaN alloy. The increase in In composition in the growth direction is more severe than the undoped InGaN. (c) 2006 Elsevier B.V. All rights reserved.

Alloy states in dilute GaAs1-xNx alloys (x < 1%)

A set of GaAs1-xNx samples with small nitrogen composition (x<1%) were investigated by continuous-wave photoluminescence (PL), pulse-wave excitation PL, and time-resolved PL. In the PL spectra, an extra transition located at the higher-energy side of the commonly reported N-related emissions was observed. By measuring the PL dependence on temperature and excitation power, the PL peak was identified as a transition of alloy band edge-related recombination in GaAsN. The PL dynamics further confirms its intrinsic nature as being associated with the band edge rather than N-related bound states. (C) 2003 American Institute of Physics.

Pressure behavior of Te isoelectronic centers in S-rich ZnS1-xTex alloy

The photoluminescence from ZnS1-xTex alloy with 0 < x < 0.3 was investigated under hydrostatic pressure up to 7 GPa. Two peaks were observed in the alloys with x < 0.01, which are related to excitons bound to isolated Te isoelectronic impurities (Te-1 centers) and Te pairs (Te-2 centers), respectively. Only the Te-2 related emissions were observed in the alloys with 0.01 < x < 0.03. The emissions in the alloys with 0.03 < x < 0.3 are attributed to the excitons bound to the Te-n (n greater than or equal to 3) cluster centers. The pressure coefficient of the Te-1 related peak is 89(4) meV/GPa, about 40% larger than that of the band gap of ZnS. On the other hand, the pressure coefficient of the Te-2 related emissions is only 52(4) meV/GPa, about 15% smaller than that of the ZnS band gap. A simple Koster-Slater model has been used to explain the different pressure behavior of the Te-1 and Te-2 centers. The pressure coefficient of the Te-3 centers is 62(2) meV/GPa. Then the pressure coefficients of the Te-n centers decrease rapidly with further increasing Te composition.

EMPIRICAL PSEUDOPOTENTIAL BAND-STRUCTURE CALCULATION FOR ZN1-XCDXSYSE1-Y QUATERNARY ALLOY

The band structure of the Zn1-xCdxSySe1-y quaternary alloy is calculated using the empirical pseudopotential method and the virtual crystal approximation. The alloy is found to be a direct-gap semiconductor for all x and y composition. Polynomial approximation is obtained for the energy gap as a function of the composition x and y. Electron and hole effective masses are also calculated along various symmetry axes for different compositions and the results agree fairly well with available experimental values.