Pressure behavior of Te isoelectronic centers in S-rich ZnS1-xTex alloy
Data(s) |
2003
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Resumo |
The photoluminescence from ZnS1-xTex alloy with 0 < x < 0.3 was investigated under hydrostatic pressure up to 7 GPa. Two peaks were observed in the alloys with x < 0.01, which are related to excitons bound to isolated Te isoelectronic impurities (Te-1 centers) and Te pairs (Te-2 centers), respectively. Only the Te-2 related emissions were observed in the alloys with 0.01 < x < 0.03. The emissions in the alloys with 0.03 < x < 0.3 are attributed to the excitons bound to the Te-n (n greater than or equal to 3) cluster centers. The pressure coefficient of the Te-1 related peak is 89(4) meV/GPa, about 40% larger than that of the band gap of ZnS. On the other hand, the pressure coefficient of the Te-2 related emissions is only 52(4) meV/GPa, about 15% smaller than that of the ZnS band gap. A simple Koster-Slater model has been used to explain the different pressure behavior of the Te-1 and Te-2 centers. The pressure coefficient of the Te-3 centers is 62(2) meV/GPa. Then the pressure coefficients of the Te-n centers decrease rapidly with further increasing Te composition. |
Identificador | |
Idioma(s) |
英语 |
Fonte |
Li GH; Fang ZL; Su FH; Ma BS; Ding K; Han HX; Sou IK; Ge WK .Pressure behavior of Te isoelectronic centers in S-rich ZnS1-xTex alloy ,PHYSICA STATUS SOLIDI B-BASIC RESEARCH,2003 ,235 (2):401-406 |
Palavras-Chave | #半导体物理 #OPTICAL-ABSORPTION #ZNS-TE #TRANSITION #EDGE |
Tipo |
期刊论文 |