GaAs/AlGaAs MQW材料激子吸收谱的电场效应及pin结构自电光效应器件（SEED)的研究

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

调制掺杂AlGaAs/GaAs异质结构中衬底光激发对导电沟道的作用

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

AlGaAs/GaAs,InGaAs/GaAs体系光电子材料的MBE生长及相关性质研究

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

高质量InGaAs/AlGaAs应变量子阱激光器的研制

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

GaAs/AlGaAs多量子阱红外探测器材料光吸收研究

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

MBE生长AlGaAs:Si中DX-中心性质的研究

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

GaAs/AlGaAs质子轰击条型半导体激光器锁相列阵研究

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

MBE GaAs-AlGaAs量子阱结构光学性质的研究

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

Si衬底上GaAs外延生长及其GaAs/AlGaAs激光器的研制

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

自组织InAlAs/AlGaAs红光量子点材料生长及其性质研究

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

InAlAs/AlGaAs自组织量子点材料的光学性质研究

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

GaAs/AlGaAs量子线的研究及在场效应弱光探测器中的应用

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

Quantum efficiency of GaAs/AlGaAs thin films with two-dimensional photonic crystals

The optical properties of GaAs/AlGaAs thin films with photonic crystals were investigated by measuring their photoluminescence spectra. The spectral intensities, lifetimes, and quantum efficiencies decreased greatly compared with those in blank material without photonic crystals. The quantum efficiencies in the material were also calculated from spectral intensities and lifetimes and the quantum efficiencies calculated from those two methods agreed with each other to some extent.

Broadband Emitting Superluminescent Diodes With InAs Quantum Dots in AlGaAs Matrix

Superluminescent diodes were fabricated by using InAs-AlGaAs self-assembled quantum dots (QDs) as the active region. The ultrawide emitting spectrum of 142 nm was achieved. The short migration length of indium adatoms on AlGaAs surface increases the size dispersion of InAs QDs, resulting in the broadening of optical gain spectrum.

Anomalous-circular photogalvanic effect in a GaAs/AlGaAs two-dimensional electron gas

We have studied the circular photogalvanic effect (CPGE) in a GaAs/AlGaAs two-dimensional electron gas excited by near infrared light at room temperature. The anomalous CPGE observed under normal incidence indicates a swirling current which is realized by a radial spin current via the reciprocal spin-Hall effect. The anomalous CPGE exhibits a cubic cosine dependence on the incidence angle, which is discussed in line with the above interpretation.