Crack-free GaN/Si(111) epitaxial layers grown with InAlGaN alloy as compliant interlayer by metalorganic chemical vapor deposition

A new method is demonstrated to be effective in reducing mismatch-induced tensile stress and suppressing the formation of cracks by inserting InAlGaN interlayers during the growth of GaN upon Si (1 1 1) substrate. Compared with GaN film without quaternary interlayer, GaN layer grown on InAlGaN compliant layers shows a five times brighter integrated PL intensity and a (0 0 0 2) High-resolution X-ray diffraction (HRXRD) curve width of 18 arcmin. Its chi(min), derived from Rutherford backscattering spectrometry (RBS), is about 2.0%, which means that the crystalline quality of this layer is very good. Quaternary InAlGaN layers, which are used as buffer layers firstly, can play a compliant role to endure the large mismatch-induced stress and reduce cracks during the growth of GaN epitaxy. The mechanisms leading to crack density reduction are investigated and results show that the phase immiscibility and the weak In-N bond make interlayer to offer tenability in the lattice parameters and release the thermal stress. (c) 2005 Elsevier B.V. All rights reserved.

Strain relaxation of InP film directly grown on GaAs patterned compliant substrate

In order to overcome the large lattice mismatch in the heteroepitaxy, a new patterned compliant substrate method has been introduced, which has overcome the disadvantages of previously published methods. InP film of thickness 800 nm was directly grown on this substrate. Scanning electron microscopy (SEM) has shown that good surface morphology has been obtained. In addition, Photoluminescence (PL) and double crystal X-ray diffraction (DCXRD) study have shown that the residual strain has been reduced, and that the structure quality has been improved. (C) 2002 Elsevier Science B.V. All rights reserved.

Nonlinear Dynamic Response of Tension Leg Platform

Tension Leg Platform (TLP) is a typical compliant offshore structure for oil exploitation in deep water. Most of the existing mathematical models for analyzing the dynamic response of TLP are based on explicit or implicit assumptions that displacements (translations and rotations) are small magnitude. Herein a theoretical method for analyzing the nonlinear dynamic behavior of TLP with finite displacement is developed, in which multifold nonlinearities are taken into account, i.e. finite displacement, coupling of the six degrees of freedom, instantaneous position, instantaneous wet surface, free surface effects and viscous drag force. Using this theoretical model, we perform the numerical analysis of dynamic response of a representative TLP. The comparison between the degenerative linear solution of the proposed nonlinear model and the published one shows good agreements. Furthermore, numerical results are presented which illustrate that nonlinearities exert a distinct influence on the dynamic responses of the TLP.

Nonlinear Dynamic Responses of the Tensioned Tether under Parametric Excitations

The nonlinear dynamic responses of the tensioned tether subjected to combined surge and heave motions of floating platform are investigated using 2-D nonlinear beam model. It is shown that if the transverse-axial coupling of nonlinear beam model and the combined surge-heave motions of platform are considered, the governing equation is not Mathieu equation any more, it becomes nonlinear Hill equation. The Hill stability chart is obtained by using the Hill's infinite determinant and harmonic balance method. A parameter M, which is the function of tether length, the surge and heave amplitude of platform, is defined. The Hill stability chart is obviously different from Mathieu stability chart which is the specific case as M=0. Some case studies are performed by employing linear and nonlinear beam model respectively. It can be found that the results differences between nonlinear and linear model are apparent.

五自由度纳米级定位精度机构的研制

提出一种新型的五自由度精密定位平台的工作原理及其设计方法。工作台采用压电陶瓷作为驱动元件，柔性导向机构实现平移及转动功能。整个工作台可由整块金属材料通过线切割加工制成，实现一体化加工，而且结构紧凑。并给出导向机构刚度计算公式及设计实例。

五自由度纳米级定位工作台的设计研究

提出一种新型的五自由度精密定位平台的工作原理及其设计方法。工作台采用柔性导向机构实现平移及转动功能，采用压电陶瓷作为驱动元件，外置纳米级电容传感器作为位移量测量反馈元件，采用数字PID控制方法，可以实现纳米级精度的定位。给出了多种形式柔性导向机构刚度计算公式及设计实例。

中国主要地方品种猪血液蛋白遗传多样性研究

实验采用水平板淀粉凝胶电泳技术,对中国地方猪五大类型9个品种、1个引入品种共201个个体进行了遗传多样性分析。共分析遗传座位30个,其中只有MDH、PEPB、AK、6PGD、ADA、PHI 6个座位具有多态性。中国主要地方猪品种的多态座位百分比P=0.200,平均杂合度H=0.065,平均等位基因数A=1.300。根据基因频率采用PHYLIP3.5c软件包计算Nei氏遗传距离,然后用“NEIGHBOR”程序分别构建NJ和UPGMA系统树。

浙江地方猪种遗传多样性研究

采用蛋白电泳和线粒体DNA RFLP分析方法,研究了浙江七个地方品种猪及浙江野猪的遗传多样性状况。从分析的30个遗传座位、99个地方品种个体中发现MDH,PEPB,6PGD,AK,ADA,PHI六个座位具有多态性,其中AK,MDH多态座位在家猪中首次发现。浙江地方猪种的亲缘关系很近。在mtDNA RFLP水平,25种限制性内切酶在27个地方品种个体及3个野猪个体中共检出30种限制性态型,可归结成三种单倍型。各单倍型间平均遗传距离(P)为0.005,群体平均多态度(#pi#))为0.000 8,处于遗传多样性贫乏范围。

Genetic diversity of Chinese native pigs inferred from protein electrophoresis

We examined protein polymorphism of 20 native pig breeds in China and 3 introduced pig breeds. Thirty loci have been investigated, among which six loci were found to be polymorphic. Especially, the polymorphism of malate dehydrogenase (MDH), adenylate kinase (AK), and two new alleles of adenosine deaminase (ADA) had not been reported in domestic pigs and wild pigs. The percentage of polymorphic loci (P), the mean heterozygosity (H), and the mean number of alleles (A) are 0.200, 0.065, and 1.300, respectively. The degree of genetic variability of Chinese pigs as a whole was higher than that of goats, lower than that of cattle and horses, and similar to that of sheep. Using the gene frequencies of the 30 loci, Nei's genetic distance among the 20 native breeds in China and 3 introduced pig breeds was calculated by the formula of Nei. The program NEIGHBOR in PHYLIP 3.5c was chosen to construct an UPGMA tree and a NJ tree. Our results show that, of the total genetic variation found in the native pig breeds in China, 31% (0.31) is ascribable to genetic differences among breeds. About 69% of the total genetic variation is found within breeds. Most breeds are in linkage disequilibrium. The patterns of genetic similarities between the Chinese native pig breeds were not in agreement with the proposed pig type classification.

In vitro anti-HIV and -HSV activity and safety of sodium rutin sulfate as a microbicide candidate

Sodium rutin sulfate (SRS) is a sulfated rutin modified from the natural flavonol glycoside rutin. Here, we investigated its in vitro anti-HIV and -HSV activities and its cytotoxic profile. Fifty percent inhibitory concentration (IC50) values of SRS against HIV-1 X4 virus IIIB, HIV-1 R5 isolates Ada-M and Ba-L were 2.3 +/- 0.2, 4.5 +/- 2.0 and 8.5 +/- 3.8 mu M with a selectivity index (SI) of 563, 575 and 329, respectively. Its IC50 against primary R5 HIV-1 isolate from Yunnan province in China was 13.1 +/- 5.5 mu M, with a Sl of 197. In contrast, unsulfated rutin had no activity against any of the HIV-1 isolates tested. Further study indicated that SRS blocked viral entry and virus-cell fusion likely through interacting with the HIV- I envelope glycoprotein. SRS also demonstrated some activity against human herpes simplex virus (HSV) with an IC50 of 88.3 +/- 0.1 mu M and a Sl of 30. The 50% cytotoxicity concentration (CC50) of SRS was >3.0 mM, as determined in human genital ME 180, HeLa and primary human foreskin fibroblast cells. Minimum inhibitory concentration of SRS for vaginal lactobacilli was >3.0 mM. These results collectively indicate that SRS represents a novel candidate for anti-HIV-1/HSV microbicide development. (C) 2007 Elsevier B.V. All rights reserved.

Effect of a low-temperature thin buffer layer on the strain accommodation of In0.25Ga0.75As grown on a GaAs(001) substrate

Various low-temperature (LT) ultra-thin buffer layers have been fabricated on the GaAs (001) substrate. The buffer layer is decoupled from the host substrate by introducing low-temperature defects. The 400 nm In0.25Ga0.75As films were grown on these substrates to test the 'compliant' effects of the buffer layers. Atomic force microscopy, photoluminescence, double crystal x-ray diffraction and transmission electron microscopy were used to estimate the quality of the ln(0.25)Ga(0.75)As layer. The measurements indicated that the misfit strains in the epilayer can be accommodated by the LT ultra-thin buffer layer. The strain accommodation effects of the LT defects have been discussed in detail.

Strain accommodation of 3C-SiC grown on hydrogen-implanted Si (001) substrate

The hydrogen-implanted Si substrate has been used for the fabrication of the "compliant substrate", which can accommodate the mismatch strain during the heteroepitaxy. The compliance of the substrate can be modulated by the energy and dose of implanted hydrogen. In addition, the defects caused by implantation act as the gettering center for the internal gettering of the harmful metallic impurities. Compared with SiC films growth on substrate without implantation. all the measurements indicated that the mismatch strains in the SiC films grown on this substrate have been released and the crystalline qualities have been improved. It is a practical technique used for the compliant substrate fabrication and compatible with the semiconductor industry. (C) 2003 Elsevier B.V. All rights reserved.

In0.25Ga0.75As films growth on the thin GaAs/AlAs buffer layer on the GaAs(001) substrate

Thin GaAs/AlAs and GaAs/GaAs buffer layer structure have been fabricated on the GaAs(001) substrate. The top GaAs buffer layer is decoupled from the host substrate by introduction of a low temperature thin interlayer (AlAs or GaAs), which was mechanically behaved like the compliant substrate. Four hundred nanometer In0.25Ga0.75As films were grown on these substrates and the traditional substrate directly. Photoluminescence (PL), double-crystal X-ray diffraction (DCXRD) and atomic force microscopy (AFM) measurements were used to estimate the quality of the In0.25Ga0.75As layer and the compliant effects of the low temperature buffer layer. All the measurements shown that the qualities of epilayer have been improved and the substrate have been deteriorated severely. The growth technique of the thin GaAs/AlAs structure was found to be simple but very powerful for heteroepitaxy. (C) 2003 Elsevier Science B.V All rights reserved.

Wurtzite GaN epitaxial growth on a Si(001) substrate using gamma-Al2O3 as an intermediate layer

Wurtzite GaN films have been grown on (001) Si substrates using gamma-Al2O3 as an intermediate layer by low pressure (similar to 76 Torr) metalorganic chemical vapor deposition. Reflection high energy electron diffraction and double crystal x-ray diffraction measurements revealed that the thin gamma-Al2O3 layer of "compliant" character was an effective intermediate layer for the GaN film grown epitaxially on Si. The narrowest linewidth of the x-ray rocking curve for (0002) diffraction of the 1.3 mu m GaN sample was 54 arcmin. The orientation relationship of GaN/gamma-Al2O3/Si was (0001) GaN parallel to(001) gamma-Al2O3 parallel to(001) Si, [11-20] GaN parallel to[110] gamma-Al2O3 parallel to[110] Si. The photoluminescence measurement for GaN at room temperature exhibited a near band-edge peak of 365 nm (3.4 eV). (C) 1998 American Institute of Physics.

A direct-conversion mixer with a DC-offset cancellation for WLAN

This paper presents a 5GHz double-balanced mixer with DC-offset cancellation circuit for direct-conversion receiver compliant with IEEE 802.11a wireless LAN standard. The analog feedback loop is used, to eliminate the DC-offset at the output of the double-balanced mixer. The test results show that the mixer with DC-offset cancellation circuit has voltage conversion gain of 9.5dB at 5.15GHz, noise figure of 13.5dB, IIP3 of 7.6 dBm, 1.73mV DC-offset voltage and 67mW power with 3.3-V power supply. The DC-offset cancellation circuit has less than 0.1mm(2) additional area and 0.3mW added power dissipation. The direct conversion WLAN receiver has been implemented in a 0.35 mu m SiGe BiCMOS technology.