Numerical analyses for the material bifurcation in plane sheet under tension

The various patterns (shear banding, surface wrinkling and necking) of material bifurcation in plane sheet under tension are investigated in this paper by means of a numerical method. It is found that numerical analysis can provide better ground for searching for the lowest critical loads. The inhomogeneity caused by void damage and the nonuniformity in the stress distribution across sheet thickness are proved to have detrimental effects on the material bifurcation. Nevertheless, material stability can be promoted by any means of depressing void damage or alleviating stress, even locally across the thickness. Besides, the peculiar behaviour of material bifurcation under slight biaxiality state is demonstrated. Copyright (C) 1996 Elsevier Science Ltd

线性稳定性理论在圆管充分发展两相流型研究中的应用

圆截面光滑直管内充分发展的两流体同心环状流的线性稳定性研究不仅具有重要的学术意义，而且在预测两相流型转换方面有着重要应用。本文评述了该流动构型的线性稳定性研究进展，着重分析了该流动构型的失稳机制及其与两相流型转换间的关系，并针对微重力气－液两相流地面模拟实验问题，探讨了今后需要着重研究的若干方面。

冲击载荷作用下容器壳体动态响应的初步数值研究

本文针对带椭球封头的爆炸容器,黑索今(RDX)在中心处的爆炸用点爆炸模型描述,利用四阶Runge-Kutta法求解一组常微分方程得到爆炸近场的自相似解。采用有限体积形式的PPM格式求解轴对称Euler方程,得到了容器内冲击波传播及其演化的图象。以计算得到的冲击载荷为基础,修改HONDO程序,壳体弹塑性模型采用J_2流动理论描述。对冲击波和壳体的耦合作用进行了初步的数值研究。计算结果表明:容器内爆炸冲击波和壳体中应力波的传播及其演化与物理上的定性分析结果是一致的。由于应力波传播速度较冲击波快,因此,在冲击波未到达的静止流场,流场出现扰动声波,并向中心传播。封头顶点附近出现最大变形。在中等载荷作用下,可忽略壳体变形对流场的影响。

Measurement of thermal rise-time of a laser diode based on spectrally resolved waveforms

Thermal resistance and thermal rise-time are two basic parameters that affect most of the performances of a laser diode greatly. By measuring waveforms received after a spectroscope at wavelengths varied step-by-step, the spectrally resolved waveforms can be converted to calculate the thermal rise-time. Basic formulas for the spectrum variation of a laser diode and the measurement set-up by using a Boxcar are described in the paper. As an example, the thermal rise-time of a p-side up packaged short-pulse laser diode was measured by the method to be 390 mu s. The method will be useful in characterizing diode lasers and LID modules in high-power applications. (c) 2005 Elsevier B.V. All rights reserved.

Subwavelength imaging with two symmetrical interfaces by dielectric-tube photonic crystals

As distinct from coated photonic crystals, in this paper we propose a novel one that is made of dielectric tubes arranged in a close-packet square lattice. Without metallic cores, this structure is low-loss and convenient to fabricate. A left-handed frequency region is found in the second band by dispersion characteristic analysis. Without inactive modes for the transverse electric mode, negative refraction and subwavelength imaging are demonstrated by the finite-difference time-domain simulations with two symmetrical interfaces, i.e. Gamma X and Gamma M.

Theoretical modelling of the effect of photon lifetime on the output dynamics of Er-doped distributed feedback fibre lasers

By employing a simple model of describing three-level lasers, we have theoretically investigated the effect of photon lifetime on the output dynamics of Er-doped distributed feedback fibre lasers. And based on the theoretical analysis we have proposed a promising method to suppress self-pulsing behaviour in the fibre lasers.

提拉法生长大尺寸γ-LiAlO2单晶的研究(英文)

由于与GaN晶格失配小(约1．4％)，γ-LiAlO2单晶有望成为一种很有希望的GaN外延衬底材料。本文使用提拉法生长出了尺寸达Ф5×50mm^3的γ-LiAlO2单晶。对该晶体毛坯的各个有代表性的位置作了X射线粉末衍射(XRPD)分析，结果表明仅仅在晶体毛坯的底部生成了一种缺锂相(LiAl5O8)。γ-LiAlO2晶体化学稳定性差，在室温时轻微水解。当在空气中于1100℃退火70h，γ-LiAlO2晶体挥发出锂组分，在表面产生缺锂相(LiAl5O8)。值得注意的是，在γ-LiAlO2晶体的红外光谱区不存

Low temperature growth of c-axis oriented AlN films on gamma-LiAlO2 by radio frequency magnetron sputtering

Aluminum nitride (AlN) films were prepared on gamma-LiAlO2 substrates by radio frequency (rf) magnetron sputtering. The influence of substrate temperature (T-s) and nitrogen (N-2) concentration on film growth was investigated. The X-ray diffraction (XRD) results reveal that highly c-axis oriented AlN films can be obtained in the temperature range from room temperature (RT) to 300 degrees C. A smoother surface and a crystalline quality decrease with increasing N-2 concentration have been observed by XRD and atomic force microscopy (AFM) for the films deposited at lower substrate temperature. On the contrary, the degradation of the surface smoothness and the higher crystalline quality can be observed for the films deposited at a higher substrate temperature with N-2-rich ambient. The growth mechanism which leads to different crystalline quality of the films is discussed. (C) 2008 Elsevier B.V. All rights reserved.