宏观深度测量压入仪器的研制

基于深度测量压入方法,以材料试验机Instron 5848 Microtester作为加载平台,外接高分辨力位移传感器,设计专用夹具,开发出该材料试验机的宏观压入功能.研究发现:对于机架柔度,无需再进行修正;对于压针接触面积,可用相关的方法计算.采用Oliver-Pharr方法处理测试数据,可获得材料的硬度和弹性模量.为了验证试验的可靠性,选用5种典型金属材料,将宏观压入测试结果与MTS Nano Indenter(R) XP测试结果进行对比,二者基本一致,其分散性均在10%以内.显示了开发传统材料试验机宏观压入测试功能的可行性

355 nm脉冲激光诱导等离子体开关削波

利用激光诱导等离子体开关技术,对355 nm脉冲激光自削波进行了实验和理论研究。分别采用5种不同焦距的透镜,集中讨论了透镜焦距及激光器输出单脉冲能量对脉宽压缩的影响,发现采用焦距为200 mm的透镜能够获得最佳的脉冲压缩效果。在聚焦透镜焦距200 mm,单脉冲能量160 mJ时,获得最短脉宽3.47 ns；在激光电离Cu小孔内壁表面及空气击穿共同作用下,获得了脉宽最短达2.11 ns的脉冲激光输出。此外,根据实验结果得到了355 nm激光空气击穿阈值,并与理论估算值进行比较,两者结果较为一致。

Stress, absorptance and laser-induced damage threshold properties of 355-nm HR coatings

A number of 355-nm Al2O3/MgF2 high-reflectance (HR) coatings were prepared by electron-beam evaporation. The influences of the number of coating layers and deposition temperature on the 355-nm Al2O3/MgF2 HR coatings were investigated. The stress was measured by viewing the substrate deformation before and after coating deposition using an optical interferometer. The laser-induced damage threshold (LIDT) of the samples was measured by a 355-nm Nd:YAG laser with a pulse width of 8 ns. Transmittance and reflectance of the samples were measured by a Lambda 900 spectrometer. It was found that absorptance was the main reason to result in a low LIDT of 355-nm Al2O3/MgF2 HR coatings. The stress in Al2O3/MgF2 HR coatings played an unimportant role in the LIDT, although MgF2 is known to have high tensile stress.

Study of Al2O3/MgF2 HR coatings at 355 nm

With the present work we tried to study the effective methods to improve the laser-induced damage threshold (LIDT) and reflectance of HR coatings at 355 nm. The work presented in this paper wits part of an ongoing study about vacuum annealing. It was dedicated to study the effects Of Vacuum annealing with different temperature gradients on the structure, optical properties and laser-induced damage threshold (LIDT) of 355nm Al2O3/MgF2HR coatings. A number of samples were prepared by electron beam evaporation using the same deposition process with an optimal deposition temperature of 280 degrees C. After deposition, samples were annealed in the coating chamber for 3 h with different temperature gradients. Morphologies of the samples were observed by Leica-DMRXE. Microscope, Structure of the samples had been characterized by X-ray diffraction (XRD). Transmittance and reflectance of the samples were measured by Lambda 900 Spectrometer, The LIDT of the samples was measured by a 355 nm Nd:YAG laser with a pulse width of 8 ns. It was found that the temperature gradient of vacuum annealing had significant effects on the morphology, structure, absorption, and LIDT of the samples, (c) 2005 Elsevier Ltd. All rights reserved.

Overcoat dependence of laser-induced damage threshold of 355 nm HR coatings

A series of HR coatings, with and without overcoat, were prepared by electron beam evaporation using the same deposition process. The laser-induced damage threshold (LIDT) was measured by a 355 nm Nd:YAG laser with a pulse width of 8 ns. Damage morphologies of samples were observed by Leica-DMRXE Microscope. The stress was measured by viewing the substrate deformation before and after coatings deposition using an optical interferometer. Reflectance of the samples was measured by Lambda 900 Spectrometer. The theoretical results of electric field distributions of the samples were calculate by thin film design software (TFCalc). It was found that SiO2 overcoat had improved the LIDT greatly, while MgF2 overcoat had little effect on the LIDT because of its high stress in the HR coatings. The damage morphologies were different among HR coatings with and without overcoats. (c) 2005 Elsevier B.V. All rights reserved.

三硼酸锂晶体上1064 nm, 532 nm, 355 nm三倍频增透膜的设计

采用矢量法设计了三硼酸锂晶体上1064 nm、532 nm和355 nm三倍频增透膜,结果表明1064 nm、532 nm和355 nm波长的剩余反射率分别为0.0017％、0.0002％和0.0013％。根据误差分析,薄膜制备时沉积速率精度控制在＋5.5％时,1064 nm、532 nm和355 nm波长的剩余反射率分别增加至0.20％、0.84％和1.89％。当材料折射率的变化控制在＋3％时,1064 nm处的剩余反射率增大为0.20％,532 nm和355 nm处分别达0.88％和0.24％。与薄膜

Temperature fields of 355 nm HR coatings based on the interface absorption model

Temperature fields of 355 nm high-reflectance (HR) coatings were investigated based on the interface absorption model. It was found that the highest temperature in the HR coatings increased with an increase in the extinction coefficient of the interface A, B, C, Al2O3 and MgF2. The highest temperature of HR coatings that can be reached increased quickly with the increase in the extinction coefficient of interface A in particular. The temperature rises of 355 nm HR coatings at different layers and different deposition temperatures were investigated based on experiments also. The damage mechanism of 355 nm HR coatings was confirmed with temperature fields and the interface absorption model.

Laser induced damage threshold at 355 and 1064 nm of Ta2O5 films of different phases

Ta2O5 films are deposited on fused silica substrates by conventional electron beam evaporation method. By annealing at different temperatures, Ta2O5 films of amorphous, hexagonal and orthorhombic phases are obtained and confirmed by x-ray diffractometer ( XRD) results. X-ray photoelectron spectroscopy ( XPS) analysis shows that chemical composition of all the films is stoichiometry. It is found that the amorphous Ta2O5 film achieves the highest laser induced damage threshold ( LIDT) either at 355 or 1064 nm, followed by hexagonal phase and finally orthorhombic phase. The damage morphologies at 355 and 1064 nm are different as the former shows a uniform fused area while the latter is centred on one or more defect points, which is induced by different damage mechanisms. The decrease of the LIDT at 1064nm is attributed to the increasing structural defect, while at 355nm is due to the combination effect of the increasing structural defect and decreasing band gap energy.

Origin and evolution of new exons in the rodent zinc finger protein 39 gene

The origin of new structures and functions is an important process in evolution. In the past decades, we have obtained some preliminary knowledge of the origin and evolution of new genes. However, as the basic unit of genes, the origin and evolution of exons remain unclear. Because young exons retain the footprints of origination, they can be good materials for studying origin and evolution of new exons. In this paper, we report two young exons in a zinc finger protein gene of rodents. Since they are unique sequences in mouse and rat genome and no homologous sequences were found in the orthologous genes of human and pig, the young exons might originate after the divergence of primates and rodents through exonization of intronic sequences. Strong positive selection was detected in the new exons between mouse and rat, suggesting that these exons have undergone significant functional divergence after the separation of the two species. On the other hand, population genetics data of mouse demonstrate that the new exons have been subject to functional constraint, indicating an important function of the new exons in mouse. Functional analyses suggest that these new exons encode a nuclear localization signal peptide, which may mediate new ways of nuclear protein transport. To our knowledge, this is the first example of the origin and evolution of young exons.

1-mm gate periphery AlGaN/AIN/GaN HEMTs on SiC with output power of 9.39 W at 8 GHz

AlGaN/AlN/GaN high electron mobility transistor (HEMT) structures with high mobility GaN channel layer were grown on 50 min diameter semi-insulating (SI) 6H-SiC substrates by metalorganic chemical vapor deposition and large periphery HEMT devices were fabricated and characterized. High two-dimensional electron gas mobility of 2215 cm(2)/V s at room temperature with sheet electron concentration of 1.044 x 10(13)/cm(2) was achieved. The 50 mm diameter HEMT wafer exhibited a low average sheet resistance of 251.0 Omega/square, with the resistance uniformity of 2.02%. Atomic force microscopy measurements revealed a smooth AlGaN surface with a root-mean-square roughness of 0.27 nm for a scan area of 5 mu mi x 5 pm. The 1-mm gate width devices fabricated using the materials demonstrated a very high continuous wave output power of 9.39 W at 8 GHz, with a power added efficiency of 46.2% and power gain of 7.54 dB. A maximum drain current density of 1300 mA/mm, an extrinsic transconductance of 382 mS/mm, a current gain cutoff frequency of 31 GHz and a maximum frequency of oscillation 60 GHz were also achieved in the same devices. (C) 2007 Elsevier Ltd. All rights reserved.

结构因子相角的代数解法及K_8H_5[La(SiWMo_(10)O_(39))(SiW_3Mo_8O_(39))]·nH_2O的晶体结构

一 结构因子相角的代数解法晶体结构研究中的相角问题，一直是晶体学工作者努力探求的基本问题。几十年来，关于相角问题的研究已经取得了巨大的进展，直接法的成熟和普遍应用就是这个进展的显著标志。在直接法相角问题研究中，历来存在两种基本方法，即概率法和代数法。当前直接法的迅猛发展，则主要以概率法为基础，其应用的基本公式即是来自∑关系中的∑_2关系和由此发展出的TANGENT公式，并结合一系列的基本理论和辅助公式，从而使直接法的发展一直呈方兴未艾之势。与此形成鲜明对照的是，相角问题的代数法研究则有日趋下降之势，尤其近十年来则显著落后了。作者从近年来的∑关系研究中，看到要解决相角问题，代数法仍然有其潜在的应作价值，并认为在概率法可以得到应用的许多方面，在代数法那里都应找到对应的类似内容，而代数法在研究和应用中所表现出的不同于概率法的那些方面也正是在相角问题研究中最令人感兴趣的问题，这就是我们进行代数法研究的目的和出发点。（一）1.5和2.5阶代数式的提出及对±2~(II)型相角的估算。（二）一般类型相角的估算（三）结构相角通用代数式的推导。代数法不仅可用于结构半不变量O，π型相角的计算，而且可用于非结构半不变量的种种类型相角的估算，其中包括型和一般类型相角，而且其应用效果完全可以和概率法相比拟，在机时利用上前者有一定优势。通用代数式的获得将为代数法的普遍应用和计算机计算创造了方便条件。二稀土杂多酸根配合物K_8H_5[La(SiWMo_(10)O_(39))(SiW_3Mo_8O_(39))]·nH_2O的晶体结构采用低温技术，在-90 ℃的干燥氮气保护下，收集晶体衍射数据，以直接法解出结构。a = 17.485(5), b = 27.096(6), c = 21.642(5)A, β = 107.79(2)°, z = 4。最后的R值为0.097。中心离子La(III)同两个杂多酸根提供的8 个氧配合。而其中的W、Mo同氧的配位情况基本相同，者是与氧六配位，形成变形配位八面体。