Photoluminescence study of InAlAs quantum dots grown on differently oriented surfaces

We reported the optical properties of self-assembled In0.55Al0.45As quantum dots grown by molecular beam epitaxy on (001) and (n11)A/B(n = 3,5)GaAs substrates. Two peaks were observed in the photoluminescence (PL) spectra from quantum dots in the (001) substrate and this suggested two sets of quantum dots different in size. For quantum dots in the high-index substrates, the PL spectra were related to the atomic-terminated surface (A or B substrate). The peaks for the B substrate surfaces were in the lower energy position than that for the (001) and A type. In addition, quantum dots in the B substrate have comparatively high quantum efficiency. These results suggested that high-index B-type substrate is more suitable for the fabrication of quantum dots than (001) and A-type substrates at the same growth condition. (C) 2000 American Vacuum Society. [S0734-211X(00)04701-6].

Substrate surface atomic structure influence on the growth of InAlAs quantum dots

We have examined the influence of substrate surface orientation on self-assembled InAlAs/AlGaAs quantum dots grown on (0 0 1) and (n 1 1) A/B (n = 3, 5) GaAs substrates by molecular beam epitaxy (MBE). Preliminary characterizations have been performed using photoluminescence (PL) and transmission electron microscopy (TEM). The PL emission energies of quantum dots on high Miller index surface are found to be strongly dependent on the atomic-terminated surface (A or B surface) of the substrate. We observed that there were planar ordering larger islands on (3 1 1)B surface compared to (0 0 1) surface, in contrast, a rough interface and smaller "grains" on (3 1 1)A surface, this result is identical with PL emission energy from these islands. We propose that the rapid strain-induced surface "roughening" impedes the formation of 3D islands on A surface, and indicating that this is a promising approach of the realization of ordering distribution on (3 1 1)B plane for devices such as red-emitting semiconductor quantum dots lasers. (C) 1999 Elsevier Science B.V. All rights reserved.

SELF-CONSISTENT TREATMENT OF 3-DIMENSIONAL - 2-DIMENSIONAL AND 2-DIMENSIONAL - 2-DIMENSIONAL RESONANT-TUNNELING IN DOUBLE-BARRIER STRUCTURES

By using a transfer-matrix method on the basis of two-dimensional (2D) Bloch sums in accordance with a tight-binding scheme, a self-consistent calculation on the resonant tunneling in asymmetric double-barrier structures is presented, in which contributions to resonant tunneling from both three-dimensional (3D) electrons in the contacts and 2D electrons in the spacer or accumulation layers are considered simultaneously. The charge buildup effect on the current versus voltage (I-V) curves is evaluated systematically, showing quantitatively how it results in the I-V bistability and enhanced differences between I-V curves for positive and negative bias in an asymmetric double-barrier structure. Special attention is focused on the interaction between 3D-2D and 2D-2D resonant-tunneling processes, including the suppression of 2D-2D resonant tunneling by the charge buildup in the well accompanying the 3D-2D resonant tunneling. The effects of the emitter doping condition (doping concentration, spacer thickness) on the presence of two types of quasi-2D levels in the emitter accumulation layers, and on the formation of a potential bulge in the emitter region, are discussed in detail in relation to the tunneling process.

Large-Eddy-Simulation of 3-Dimensional Rayleigh-Taylor Instability in Incompressible Fluids

The 3-dimensiqnal incompressible Rayleigh-Taylor instability is numerically studied through the large-eddy-simulation (LES) approach based on the passive scalar transport model. Both the instantaneous velocity and the passive scalar fields excited by sinu

3-dimensional transient wave response in a cracked elastic solid

The three-dimensional transient wave response problem is presented for an infinite elastic medium weakened by a plane crack of infinite length and finite width. Tractions are applied suddenly to the crack, which simulates the case of impact loading. The integral transforms are utilized to reduce the problem to a standard Fredholm integral equation in the Laplace transform variable and sequentially invert the Laplace transforms of the stress components by numerical inversion method. The dynamic mode I stress intensity factors at the crack tip are obtained and some numerical results are presented in graphical form.

Fracture analysis for 3-dimensional bodies with a surface crack

This paper deals with fracture analyses in 3-dimensional bodies containing a surface crack. A general solution of stress-strain fields at crack tip is proposed. Based on the stress-strain fields obtained, a high-order 3-dimensional special element is established to calculate the stress intensity factors in a plate with a surface crack. The variation of stress intensity factors with geometric parameters is investigated.

Study on cracked plates, shells and 3 dimensional bodies

This paper presents a summary of the authors' recent work in following areas: (1) The stress-strain fields at crack tip in Reissner's plate. (2) The calculations of the stress intensity factors in finite size plates. (3) The stress-strain fields at crack tip in Reissner's shell. (4) The calculations of the stress intensity factors and bulging coefficients in finite size spherical shells. (5) The stress-strain fields along crack tip in three dimensional body with surface crack. (6) The calculation of stress intensity factors in a plate with surface crack.

Short-surface waves radiated by a partially-immersed 3-dimensional oscillating body

The short-surface waves generated by a 3-D arbitrarily oscillating body floating onwater are discussed. In the far-field off the body, the phase and the amplitude functions ofthe radiated waves are determined by the ray method. An undetermined constant is includ-ed in the amplitude function. From the result of Ref. [1], the near-field boundary layersolution near the body waterline is obtained. The amplitude of this solution depends on thewhole wall shape of the body and the slope at the body waterline on the cross-sections per-pendicular to the waterline. By matching the far-field solution with the near-field bound-ary layer solution, the undetermined constant in the amplitude function of the far-fieldradiated waves is determined. For the special case of a half-submerged sphere which per-forms vertical oscillating motion, the result obtained in this paper is in agreement withthat of Ref. [ 2 ].

One-dimensional improvement and two-dimensional and 3-dimensional treatments for stable oscillation condition, mode structure and power output in high-speed-flow lasers

For high-speed-flow lasers, the one-dimensional and first-order approximate treatment in[1] under approximation of geometrical optics is improved still within the scope of approx-imation of geometrical optics. The strict accurate results are obtained, and what is more,two- and three-dimensional treatments are done. Thus for two- and three-dimensional cases, thestable oscillation condition, the formulae of power output and analytical expression of modesunder approximation of geometrical optics (in terms of gain function) are derived. Accord-ing to the present theory, one-and two-dimensional calculations for the typical case of Gerry'sexperiment are presented. All the results coincide well with the experiment and are better thanthe results obtained in [1].In addition, the applicable scope of Lee's stable oscillation condition given by [1] is ex-panded; the condition for the approximation of gcometrical optics to be applied to mode con-structure in optical cavity is obtained for the first time and the difference between thiscondition and that for free space is also pointed out in the present work.

Changing planar thin film growth into self-assembled island formation by adjusting experimental conditions

Illustrated in this paper are two examples of altering planar growth into self-assembled island formation by adapting experimental conditions. Partial oxidation, undersaturated solution and high temperature change Frank-Van der Merwe (FM) growth of Al0.3Ga0.7As in liquid phase epitaxy (LPE) into isolated island deposition. Low growth speed, high temperature and in situ annealing in molecular beam epitaxy (MBE) cause the origination of InAs/GaAs quantum dots (QDs) to happen while the film is still below critical thickness in Stranski-Krastanow (SK) mode. Sample morphologies are characterized by scanning electron microscopy (SEM) or atomic force microscopy (AFM). It is suggested that such achievements are of value not only to fundamental researches but also to spheres of device applications as well. (c) 2004 Elsevier B.V. All rights reserved.

U-transformation-finite element method in 3-dimensional analysis of orthotropic laminates

For an orthotropic laminate, an equivalent system with doubly cyclic periodicity is introduced. Then a 3-dimensional finite element model for the equivalent system is transformed into the unitary space, where the large finite element matrix equation is decoupled into some small matrix equations. Such a decoupling very efficiently reduces the computational effort. For an orthotropic laminate with four clamped edges, no exact elasticity solution is available, and the deflection values predicted by different methods have a considerable difference each other for a small length-to-thickness ratio. The present predictions are the largest because the present method is a full 3-dimensional finite element analysis without superfluous constraints. Illustrative numerical examples are presented to observe the distributions of stresses through the thickness of the laminates. (C) 2010 Elsevier Ltd. All rights reserved.

Pt nanoparticles: Heat treatment-based preparation and Ru(bpy)(3)(2+)-mediated formation of aggregates that can form stable films on bare solid electrode surfaces for solid-state electrochemiluminescence detection

A simple thermal process for the preparation of small Pt nanoparticles is presented, carried out by heating a H-2-PtCl6/3- thiophenemalonic acid aqueous solution. The following treatment of such colloidal Pt solution with Ru( bpy)(3)(2+) causes the assembly of Pt nanoparticles into aggregates. Most importantly, directly placing such aggregates on bare solid electrode surfaces can produce very stable films exhibiting excellent electrochemiluminescence behaviors.

The formation mechanism of low leaching glassy slag during plasma arc vitrification treatment of fly ash

In this paper, the glass formation theory is applied to study the formation mechanism of the low leaching glassy slag during the process of plasma waste treatment. The research shows that SiO2 acts as network former to form a 3-dimensional Si-O tetrahedral network in which heavy metals are bonded or encapsulated, so the Si-O tetrahedron protect heavy metals against leaching from the vitrified slag or acid corrosion. For given chemical compositions of waste, the formation ability of the vitrified slag can be represented by the ratio of the whole oxygen ions to the whole network former ions in glass (O/Si) which is appropriate in the range of 2~3. A plasma arc reactor is used to conduct the vitrification experiments of two kinds of fly ashes with additives in which effects of various parameters including arc power, cooling speed, treatment temperature are studied. The chemical compositions of fly ashes are analyzed by X-ray fluorescence (XRF) spectrometry. The experimental results show that both cooling speed and O/Si have important influence on the formation of the vitrified slag, which is qualitatively in accordance with the predictions of the glass formation theory.

The two- to three-dimensional growth transition of InAs/GaAs epitaxy layer studied by reflectance difference spectroscopy

In this work, we have adopted reflectance difference spectroscopy to study the evolution of InAs layer grown at different temperatures in GaAs matrix. Associated with the two- to three-dimensional growth transition of InAs layer, the transition energies and the in-plane optical anisotropy of InAs wetting layer exhibit abrupt changes. This provides a new way to decide the critical thickness h(c) for the growth transition. The obtained h(c)s are compared with those determined by atomic force microscope measurement, and discrepancy is found at high temperatures. The origin of the difference is clarified and the variations in hc with temperature are further discussed. (C) 2010 American Institute of Physics. [doi:10.1063/1.3494043]