62 resultados para 23-230

em Chinese Academy of Sciences Institutional Repositories Grid Portal


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<正> 本项成果,是承包美国太阳东方勘探公司任务而完成的。在系统分析总结了南海西部石油公司“南海—503工程地质取芯船”在南海北部湾23/25太阳区块所进行的测深、侧扫声纳、地震声学剖面测量,及4口孔深40米的工程地质浅钻土柱等材料的基础上,详细阐述了

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We have developed a two-stage Ti:sapphire amplifier system which can produce 17-TW/23-fs pulses at a repetition rate 10 MHz. A birefringent plate is used in the regenerative amplifier to alleviate gain narrowing, while an all-reflective cylindrical-mirror-based pulse stretcher and an acousto-optic programmable dispersive filter (AOPDF) are used to compensate for the higher order dispersion of the system.

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A planar lightwave circuit (PLC) add-drop filter is proposed and analyzed, which consists of a symmetric Mach-Zehnder interferometer (MZI) combined with double microring resonators. A critical coupling condition is derived for a better box-like drop spectrum. Comparisons of its characteristics with other schemes, such as a MZI with a single ring resonator, arepresented, and some of the issues about device design and fabrication are also discussed.

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土壤氮素矿化是陆地生态系统氮素转化的重要组成部分。不同的土地利用(管理)方式会改变土壤氮素转化过程,影响土壤肥力的保持,进而可能造成土壤内氮素渗漏流失。为系统了解内蒙古农牧交错区土壤氮素转化的特点,本实验采用原位培养顶盖埋管法进行野外培养,每间隔一个月定期取样,于2004年7月-2006年10月在植物所恢复生态学实验站进行了两个试验,1:选择农牧交错区四种有代表性的土地类型(围封样地:FS,放牧样地:GS,弃耕地:AF,和农田:CF),比较土地利用方式之间氮素矿化的异同;2:在施肥样地通过不同施肥处理(F0: 1g N m-2, F1: 1g N m-2, F2: 2g N m-2, F3: 4g N m-2, F4: 8g N m-2, F5: 16g N m-2, F6: 32g N m-2, F7: 64g N m-2) 的土壤氮素转化动态,确定过度放牧的典型草原围封禁牧后,植被恢复过程中最适宜的施肥量。主要结论如下: 1. 与试验初期相比,整个非生长季围封样地、弃耕地和农田的铵态氮和无机氮含量逐渐降低,培养结束时铵态氮含量分别减少了67.04%,77.31%和70.54%,而放牧地的含量增加1.63%。围封样地、放牧地、弃耕地和农田的硝态氮含量分别增加了61.61%,376.43%,199.75%和133.16%。非生长季四种土地类型的土壤氮素转化速率主要受温度影响。围封样地、放牧地、弃耕地和农田非生长季矿化速率均值分别为-0.016,0.0429,-0.0051和-0.0030 μg g-1 d-1。硝化速率均值变幅为-0.43-0.17 μg g-1d-1。 2. 与没有冷冻而融化的土壤相比,冻融显著影响土壤无机氮含量的变化。只有在较低的土壤温度条件下冷冻以后,融化才会促进土壤氮素矿化。不同的冷冻时间长度下融化均会促进土壤硝化速率。土壤温度、土壤含水量变化是影响氮素转化速率的重要因子。 3. 四种土地类型的年日均矿化速率为放牧样地>农田>弃耕地>围封样地,分别为0.25,0.11,0.10,0.06μg g-1d-1,其年平均速率分别为11.65,5.50,5.00和2.46g m-2 y-1,而年日平均硝化速率分别为0.27,0.095,0.097和0.05μg g-1d-1。其中生长季日均矿化速率和日均硝化速率均为其年日均速率的两倍。因此,生长季形成的矿化氮是全年的93%,而形成的硝态氮占全年的86%。四种土地类型年均矿化氮的累积量平均为615.04 kg ha-1,而硝化作用的累积量变幅为230.44-1218.86 kg ha-1。四种土地类型的矿化速率和硝化速率的季节动态变化与气候因子的变化一致。 4. 不同施肥处理对典型草原土壤氮素转化均有显著影响。与对照相比,少量施肥(F1,F2)土壤铵态氮,硝态氮和无机氮含量分别减少20.57%,11.18%和17.18%。当施肥量大于F4(8g N m-2)时,随施肥量增加土壤铵态氮,硝态氮和无机氮含量增加18%-1191%。除F5(16g N m-2)外,与对照相比,随施肥量增加,土壤矿化速率增加了5-21倍。4 g N m-2 (F3)左右是典型草原生态系统比较合适的施肥量。 5. 氨气挥发速率的季节动态特征与气象因子的变化一致,其速率变幅为17.65 - 1228.39µg m-2 d-1,其中7月挥发量占全年的37%。与对照相比,少量施肥氨气挥发速率降低了1-2%,施肥量大于F3 (4g N m-2),速率增加了1-4倍。实验期间总的流失量变幅为23.76-84.91mg m-2,而且通过氨气挥发流失量低于土壤全氮的3%。氨气挥发不是典型草原过量氮素流失的主要方式。 6. 氮素限制的典型草原,植被恢复过程中外源氮素添加阈值为:4 g N m-2 (F3)。与对照相比,短期施肥(3年)不会显著影响根系碳储量和土壤碳氮储量。施肥处理的土壤硝态氮和无机氮含量显著增加,说明施肥显著刺激硝化作用。典型草原60%植物根系主要分布在地下0-10cm,这里的碳储量占地下储量(0-50cm)的63%以上。随土壤深度增加,土壤全氮,全碳,无机氮储量降低。而铵态氮储量和可利用的无机氮含量随土壤深度增加,说明植物根系主要吸收利用上层可利用氮素,而且下层氮素矿化速率降低。

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Przewalskin A (1), a novel C-23 terpenoid with a 6/6/7 carbon ring skeleton, was isolated from Salvia przewalskii. Its structure was determined by comprehensive 1D NMR, 2D NMR, and MS spectroscopic analysis and subsequently confirmed by a single-crystal X

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研究以昆明山海棠根部水抽提物(Tripterygium hypoglaucum (Level) Hutch,THH)处理中国仓鼠V_(79)细胞,通过检测V_(79)细胞C-M细胞频率以及二酰基甘油(1,2-diacylgcerol,DAG)的含量测定,分析了THH诱发非整倍体与细胞醇磷酯信号通路的关系。结果指出:THH能在1mg/ml、2mg/ml两个剂量上使V_(79)细胞的DAG含量显著升高(P<0.001),并明显的提高C-M细胞频率(P<0.05),提示肌醇酯信号通路是介导THH诱发非整倍体的途径之一。

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Perfluorooetanesulfonate (PFOS) is a persistent organic pollutant, the potential toxicity of which is causing great concern. In the present study, we employed zebrafish embryos to investigate the developmental toxicity of this compound. Four-hour post-fertilization (hpf) zebrafish embryos were exposed to 0.1, 0.5, 1, 3 and 5 mg/L PFOS. Hatching was delayed and hatching rates as well as larval survivorship, were significantly reduced after the embryos were exposed to 1, 3 and 5 mg/L PFOS until 132 hpf. The fry displayed gross developmental malformations, including epiboly deformities, hypopigmentation, yolk sac edema, tail and heart malformations and spinal curvature upon exposure to PFOS concentrations of I mg/L or greater. Growth (body length) was significantly reduced in the 3 and 5 mg/L PFOS-treated groups. To test whether developmental malformation was mediated via apoptosis, flow cytometry analysis of DNA content, acridine orange staining and TUNEL assay was used. These techniques indicated that more apoptotic cells were present in the PFOS-treated embryos than in the control embryos. Certain genes related to cell apoptosis, p53 and Bax, were both significantly up-regulated upon exposure to all the concentrations tested. In addition, we investigated the effects of PFOS on marker genes related to early thyroid development (hhex and pax8) and genes regulating the balance of androgens and estrogens (cyp19a and cyp19b). For thyroid development, the expression of hhex was significantly up-regulated at all concentrations tested, whereas pax8 expression was significantly up-regulated only upon exposure to lower concentrations of PFOS (0.1, 0.5, 1 mg/L). The expression of cyp19a and of cyp19b was significantly down-regulated at all exposure concentrations. The overall results indicated that zebrafish embryos constitute a reliable model for testing the developmental toxicity of PFOS, and the gene expression patterns in the embryos were able to reveal some potential mechanisms of developmental toxicity. (C) 2008 Elsevier Inc. All rights reserved.

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Effects of V/III ratio on heavily Si doped InGaAs and InP were studied using low pressure metalorganic chemical vapor deposition (LP-MOCVD) at a growth temperature of 550degreesC. In InGaAs, as the V/III ratio decreases from 256 to 64, the carrier concentration increases from 3.0 x 10(18) to 5.8 x 10(18) cm(-3), and the lattice mismatch of InGaAs to InP was observed to vary from -5.70 x10(-4) to 1.49 x 10(-3). In InP, when the V/III ratio decreases from 230 to 92, the same trend as that in Si doped InGaAs was observed that the carrier concentration increases from 9.2 x 10(18) to 1.3 x 10(19) cm(-3). The change of AsH3 was found to have stronger effect on Si incorporation in InGaAs at lower growth temperature than at higher growth temperature. (C) 2003 Elsevier B.V. All rights reserved.

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设计并制作了阻塞型和完全无阻塞型4×4热光SOI(silicon-on-insulator)波导开关阵列.开关单元采用了多模干涉耦合器(MMI)-MZI(Mach-Zehnder intederometer)结构的2×2光开关.阻塞型光开关附加损耗为4.8~5.4 dB,串扰为-21.8 dB~-14.5 dB.完全无阻塞型光开关阵列附加损耗为6.6~9.6 dB,串扰为-25.8~-16.8 dB.两者的消光比都在17~25 dB内变化,开关单元功耗小于230 mW.器件的开关时间小于3μs.功耗和开关速度都明显优于SiO_2基和聚合物基的开关阵列.

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分别在金属有机化学汽相沉积(MOCVD)生长的i-Al0.33Ga0.67N/AlN/n-GaN和p-Al0.45Ga0.55N/i—Al0.45Ga0.55N/n+-Al0.65Ga0.35N的异质结构上,成功研制了太阳盲区的肖特基型和PIN型紫外探测器。研究结果表明,Au与i—Al0.33Ga0.67N形成了较好的肖特基结,响应波长从250—290nm,峰值(286nm)响应率约为0.08A/W;PIN型紫外探测器的响应波长从230~275nm,峰值(246nm)响应率约为0.02A/W。

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利用MBE方法在(001)衬底上成功地生长了密度大、尺寸小、发红光的InAlAs/Al-GaAs量子点结构。通过原子力显微镜观测表明,InAlAs量子点的密度和大小都随覆盖厚度的增加而增大;发现Al原子的表面迁移率决定InAlAs量子点的形貌。光荧光谱证实了量子点的发光峰值在红光范围,并结合形貌的统计得到了量子点的发光峰展宽主要是受量子点的横向尺寸影响。

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