Combined Effects of Silica Filler and Its Interface in Epoxy Resin

In this paper, mechanical properties of silica-filled epoxy resin are tested. The tests show that at elevated temperatures, the material’s properties (e.g. yield stress, flow stress, etc.) vary immonotonically with filler volume fraction. Nanoindentation test results suggest that an interface region, stronger than the matrix, is formed in the materials. The formation of the interface has positive effects on the yield strengths of materials. The addition of particles in the matrix produces a large disturbance in stress distribution, leading to stress concentration in the matrix. The stress concentration has negative effects on the yield strengths of materials. The calculation demonstrates that the maximum stress in samples varies immonotonically with particulate concentration. So, the immonotonic variation of mechanical behavior of materials may be rooted in the contradictory effects of the interface region and the stress concentration caused by particulate addition.

利用力致分子动力学模拟方法构建剪切流场

国家自然科学基金项目(30730032/10702075)

电控径向滤波器的横向超分辨与轴向焦移

提出一种光瞳滤波器来同时实现横向超分辨和轴向焦移效应的电控制．该光瞳滤波器由两偏光镜及包含有径向双折射元件的任意偏振态的电控旋光器组成。利用径向双折射元件对光偏振态的空间调制作用，结合旋光器对任意偏振态光的旋光作用，与两个偏光镜结合，实现了空间偏振态的重新分布．利用庞加莱球及琼斯理论进行了分析，结果表明，借助这种电致位相延迟来实现的偏振态调制效应，可同时实现横向超分辨与轴向焦移效应。对能够同时获得横向超分辨与轴向焦移的情况进行了分析，得到了系统各组成参量及电光调制范围。

复方昆明山海棠颗粒对小鼠淋巴细胞体外增殖活化影响的研究

目的:研究复方昆明山海棠颗粒(composite tripterygium hypoglaucum hutch, CTHH)对小鼠脾淋巴细胞增殖、活化标志CD69和CD25及细胞因子IL-4及γ-IFN的影响,为阐明其免疫抑制作用提供分子药理学依据.方法:无菌分离小鼠脾淋巴细胞,加入不同浓度的复方昆明山海棠颗粒溶液,MTT法检测ConA刺激的小鼠脾淋巴细胞增殖;流式细胞仪检测活化标志CD69及CD25;酶联免疫法检测细胞因子IL-4及γ-IFN.结果: CTHH对脾淋巴细胞增殖活化及分泌均有抑制作用.

乙醇浸泡蜜蜂标本DNA的提取纯化

利用RAPD、PCR、RFLP、分子杂交等分子生物学 技术研究生物的遗传变异、遗传多态、分子进化等，必 须以DNA作为模板，目前所见有关DNA提取纯化的 报道均用活体或冰冻蜜蜂，这给样品采集、保存带来不 便。本实验以采自云南不同地区以及马来西亚的蜜蜂 乙醇(75％)浸泡标本为材料，参照王文(1994年)的蛋 白酶K提取法并加以改进，对DNA进行提取纯化。

两个不同江豚群体ISSR遗传多样性初步分析

采用ISSR分子标记对中国水域隶属于不同江豚(Neophocaena phocaenoides)亚种的两个群体即长江群体和渤海群体的遗传多样性进行分析。用19条ISSR引物及3对引物组合对两个群体共36个样品的基因组DNA进行PCR扩增,共得到115个清晰的扩增位点,其中多态性位点48个,多态位点百分率(PPL)为41.71%。POPGENE分析结果表明:两个江豚群体的总体遗传多样性水平相对较低(He=0.1643;Ho=0.2413);长江群体的遗传多样性水平(He=0.1530;Ho=0.2223)稍

Effects of crystalline quality on the phase stability of cubic boron nitride thin films under medium-energy ion irradiation

To investigate the effect of radiation damage on the stability and the compressive stress of cubic boron nitride (c-BN) thin films, c-BN films with various crystalline qualities prepared by dual beam ion assisted deposition were irradiated at room temperature with 300 keV Ar+ ions over a large fluence range up to 2 x 10(16) cm(-2). Fourier transform infrared spectroscopy (FTIR) data were taken before and after each irradiation step. The results show that the c-BN films with high crystallinity are significantly more resistant against medium-energy bombardment than those of lower crystalline quality. However, even for pure c-BN films without any sp(2)-bonded BN, there is a mechanism present, which causes the transformation from pure c-BN to h-BN or to an amorphous BN phase. Additional high resolution transmission electron microscopy (HRTEM) results support the conclusion from the FTIR data. For c-BN films with thickness smaller than the projected range of the bombarding Ar ions, complete stress relaxation was found for ion fluences approaching 4 x 10(15) cm(-2). This relaxation is accompanied, however, by a significant increase of the width of c-BN FTIR TO-line. This observation points to a build-up of disorder and/or a decreasing average grain size due to the bombardment. (c) 2005 Elsevier B.V. All rights reserved.

MBE Growth of High Electron Mobility InP Epilayers

The molecular beam epitaxial growth of high quality epilayers on （100） InP substrate using a valve phosphorous cracker cell over a wide range of P/In BEP ratio （2.0-7.0） and growth rate （0.437 and 0. 791μm/h）. Experimental results show that electrical properties exhibit a pronounced dependence on growth parameters,which are growth rate, P/In BEP ratio, cracker zone temperature, and growth temperature. The parameters have been optimized carefully via the results of Hall measurements. For a typical sample, 77K electron mobility of 4.57 × 10^4 cm^2/（V · s） and electron concentration of 1.55×10^15 cm^-3 have been achieved with an epilayer thickness of 2.35μm at a growth temperature of 370℃ by using a cracking zone temperature of 850℃.

Fabrication of silicon-on-reflector for Si-based resonant-cavity-enhanced photodetectors

A novel silicon-on-reflector substrate for Si-based resonant-cavity-enhanced photodetectors has been fabricated by using Si-based sol-gel and smart-cut techniques. The Si/SiO2 Bragg reflector is controlled in situ by electron beam evaporation and the thickness can be adjusted to get high reflectivity. The reflectance spectra of the silicon-on-reflector substrate with five pairs of Si/SiO2 reflector have been measured and simulated by transfer matrix model. The reflectivity at operating wavelength is close to 100%. Based on the silicon-on-reflector substrate, SiGe/Si multiple quantum wells resonant-cavity-enhanced photodetectors for 1.3 mu m wavelength have been designed and simulated. Ten-fold enhancement of the quantum efficiency of resonant-cavity-enhanced photodetectors compared with conventional photodetectors is predicted.