23 resultados para 1381

em Chinese Academy of Sciences Institutional Repositories Grid Portal


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以通俗易懂的方式介绍了空气动力学当气体间断分子效应显著时发展起来的特殊分支--稀薄气体动力学。讨论了非平衡现象与稀薄气体动力学的关系。通过与8速度气体模型的间断Boltzmann方程的对比,解释了Boltzmann方程碰撞项的物理意义和数学困难,简要综述了其一般解法。讨论了分子在物体表面的反射和问题的边界条件,着重介绍了直接模拟Monte Carlo(DSMC)方法和为克服低速稀薄流动(如MEMS中流动)中模拟困难的信息保存(IP)方法。

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在传统哈特曼检验法基础上研制成功一种扫描型哈特曼检测新装置。可对最大口径为Ф300mm的聚焦镜在全口径范围内进行采样测量。该检测装置由大口径标准平行光管、扫描式哈特曼光阑、被俭聚焦镜、CCD摄像机及计算机组成。在水平和垂直两个径向上开有等间距排列且相互错开半个间距的小孔。并且在步进电机的驱动下绕光轴旋转。可对被检聚焦镜进行全口径连续采样。对有效口径为夺154mm的斐索平面干涉仪非球面准直物镜的球差及焦斑能量集中度进行了测量。进而由球差计算得到了波像差。并用干涉法对该准直物镜进行了测量。球差的理论值与测量值

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用提拉法成功地生长了6mol%的高浓度掺铒铌酸锂晶体。测量了晶体的两个非偏振方向(X和Z)以及两个偏振方向(π和δ)的吸收光谱。高浓度掺铒铌酸锂晶体的吸收系数高,有利于提高泵浦效率。根据所测的吸收光谱用Judd-Ofelt理论拟合出了Er^3+离子的强度参数Ωλ。所得的均方差结果显示偏振拟合的误差要小于非偏振拟合。利用偏振吸收数据计算了各能级跃迁的自发辐射跃迁几率(AJJ’)、辐射寿命(τ)、荧光分支比(β)和积分发射截面(σp)等参数,对计算结果进行了讨论并与其他文献的报道结果进行了比较。

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处于北半球高纬度地区的环球北方森林是大气CO2的重要碳汇。但是,研究表明未来气候变化将使全球北方林北移,并由目前的大气CO2碳汇转为碳源。兴安落叶松林主要分布在大兴安岭林区,是我国寒温带针叶林区北段的地带性植被,也是环球北方森林的组成部分,位于我国对全球变化敏感的区域,是森林生态系统研究的重点。 本文以温暖指数(WI),寒冷指数(CI),湿润指数(WI),一月最低温度,七月最高温度和年降水量等环境变量为因子,比较分析了广义线性模型(GLM),逐步回归广义线性模型(SGLM),广义加法模型(GAM)和分类回归树(CART)模型对兴安落叶松地理分布的模拟效果。并结合全球气候模式预估的未来情景对未来气候条件下的分布进行了预估。同时,利用搜集到的生产力及相应的气候数据,在比较分析4个区域植被气候生产力模型对兴安落叶松林生产力模拟效果的基础上,选择模拟效果和结构简单的区域植被气候生产力模型,引入林龄这一生物因子,建立了兴安落叶松林生物气候生产力模型,探讨了兴安落叶松林生产力对气候变化的响应。结果表明,在广义线性模型,逐步回归广义线性模型,广义加法模型和分类回归树模型4个模型中,以广义加法模型模拟兴安落叶松地理分布最为准确。据此,结合未来气候变化情景模拟了兴安落叶松分布。在SRES-A2排放方案下,2020年兴安落叶松适宜分布面积将减少58.1%,2050年适宜分布面积进一步减少99.7%;在SRES-B2排放方案下,兴安落叶松适宜分布面积到2020年将减少66.4%,到2050年进一步减少97.9%。两种排放方案下,到2100年兴安落叶松适宜分布区将完全从我国消失。 4个区域植被气候生产力模型中,以综合模型模拟结果与实测值相关性最好,Thornthwaite memorial模型次之,但综合模型需要参数较多,且参数较难获取,因此选用Thornthwaite memorial模型来模拟兴安落叶松林气候生产力。在区域植被气候生产力模型的基础上,引入林龄这一生物因子,能显著提高区域植被气候生产力模型的模拟精度,从而建立了兴安落叶松林生物气候生产力模型。运用所建的兴安落叶松林生物气候生产力模型,结合未来气候情景预测,对不同林龄的兴安落叶松林生产力对气候变化的响应进行了研究,结果表明,未来气候变化下,不同林龄的兴安落叶松林生产力均有不同程度的增加。

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The structure-based sequence motif of the distant proteins in evolution, protein tyrosine phosphatases (PTP) I and II superfamilies, as an example, has been defined by the structural comparison, structure-based sequence alignment and analyses on substitut

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By replacing the flat (Ga1-xAlx)As barrier layer with a trapezoidal AlxGa1-xAs barrier layer, a conventional heterostructure can be operated in enhancement mode. The sheet density of two-dimensional electron gas (2DEG) in the structure can be tuned linearly from N-2D = 0.3 x 10(11) cm(-2) to N-2D = 4.3 x 10(11) cm(-2) by changing the bias on the top gate. The present scheme for gated heterostructures is easy to fabricate and does not require the use of self-alignment photolithography or the deposition of insulating layers. In addition, this scheme facilitates the initial electrical contact to 2DEG. Although, the highest electron mobility obtained for the moment is limited by the background doping level of heterostructures, the mobility should be improved substantially in the future. (C) 2009 Elsevier B.V. All rights reserved.

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Large area (25 mm(2)) silicon drift detectors and detector arrays (5x5) have been designed, simulated, and fabricated for X-ray spectroscopy. On the anode side, the hexagonal drift detector was designed with self-biasing spiral cathode rings (p(+)) of fixed resistance between rings and with a grounded guard anode to separate surface current from the anode current. Two designs have been used for the P-side: symmetric self-biasing spiral cathode rings (p(+)) and a uniform backside p(+) implant. Only 3 to 5 electrodes are needed to bias the detector plus an anode for signal collection. With graded electrical potential, a sub-nanoamper anode current, and a very small anode capacitance, an initial FWHM of 1.3 keV, without optimization of all parameters, has been obtained for 5.9 keV Fe-55 X-ray at RT using a uniform backside detector.

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Web应用服务器目前普遍采用的先到先得式(FCFS)的调度框架在过载时难以保障应用的服务质量(QoS)需求.QoS获益驱动(QBD)的调度框架是一种针对这些不足而提出的请求调度解决方案.QoS获益根据应用的QoS需求得到,用于评价QoS保障对应用需求的满足情况.QBD调度框架包含了多个用于保障应用QoS需求的组件,实现了基于QoS获益的资源规划算法,能够提高服务器对应用QoS需求的保障能力.在OnceAS平台上的实验结果验证了QBD调度框架的有效性.

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采用三元InGaAs体材料为有源区,通过直接在InGaAs体材料中引入0.20%张应变来加强TM模的增益,研制了一种适合于作波长变换器的偏振不灵敏半导体光放大器(SOA).在低压金属有机化学气相外延(LP-MOVPE)的过程中,只需调节三甲基Ga的源流量便可获得所要求的张应变量.制作的半导体光放大器在200 mA的注入电流下,获得了50nm宽的3 dB光带宽和小于0.5dB的增益抖动;重要的是,半导体光放大器能在较大的电流和波长范围里实现小于1.1dB的偏振灵敏度.对于1.55μm波长的信号光,在200 mA的偏置下,其偏振灵敏度小于1 dB,同时获得了大于14dB光纤到光纤的增益,3 dBm的饱和输出功率和大于30 dB的芯片增益.用作波长变换器,可获得较高的波长变换效率.进一步提高半导体光放大器与光纤的耦合效率,可得到性能更佳的半导体光放大器.

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Large area (25 mm(2)) silicon drift detectors and detector arrays (5x5) have been designed, simulated, and fabricated for X-ray spectroscopy. On the anode side, the hexagonal drift detector was designed with self-biasing spiral cathode rings (p(+)) of fixed resistance between rings and with a grounded guard anode to separate surface current from the anode current. Two designs have been used for the P-side: symmetric self-biasing spiral cathode rings (p(+)) and a uniform backside p(+) implant. Only 3 to 5 electrodes are needed to bias the detector plus an anode for signal collection. With graded electrical potential, a sub-nanoamper anode current, and a very small anode capacitance, an initial FWHM of 1.3 keV, without optimization of all parameters, has been obtained for 5.9 keV Fe-55 X-ray at RT using a uniform backside detector.