空间发展混合流的大涡模拟

采用大涡模拟方法数值模拟了空间发展混合流，通过在平均流中引入小扰动，研究了混合流大涡结构的产生和演化过程，捕捉了展向涡的卷起、配对、合并，以及二次流向涡的出现等大尺度的三维拟序结构。与实验及直接数值模拟的结果相比，吻合程度较好。

Simultaneous Laser-Induced Fluorescence And Contactless-Conductivity Detection For Microfluidic Chip

A combined detection system involving simultaneous LIF and contactless-conductometric measurements at the same place of the microfluidic chip was described. The LIF measurement was designed according to the confocal principle and a moveable contactless-conductivity detector was used in (CD)-D-4. Both measurements were mutually independent and advantageous in analyses of mixtures. Various experimental parameters affecting the response were examined and optimized. The performances were demonstrated by simultaneous detection of Rhodamine B. And the results showed that the combined detection system could be used sensitively and reliably. (C) 2008 Yong Yu. Published by Elsevier B.V. on behalf of Chinese Chemical Society. All rights reserved.

大功率半导体激光器二维阵列模块特性分析

根据固体激光器抽运的技术要求，设计了一种具有水冷装置的大功率半导体激光器二维阵列模块，并对半导体激光器热沉和致冷系统的热流进行了分析。在不同占空比下，对该模块进行了测试与分析。该模块的中心波长为810nm，光谱半峰全宽（FWHM）为2．5nm，工作电流为110A（200μs，10％占空比），循环水温为15℃时输出峰值功率为280W。结果表明，该封装结构在占空比小于5％时器件工作特性良好，在10％占空比F也可正常工作。利用该模块可以组合成多种几何结构、功率更高的半导体激光器组件。

Enhanced broadband near-infrared luminescence and optical amplification in Yb-Bi codoped phosphate glasses

Yb-Bi codoped phosphate glass was prepared and its properties were compared with Bi-doped phosphate glass. The broadband infrared luminescence intensity from Yb-Bi codoped glass was similar to 32 times stronger than that of Bi-doped glass. The single-pass optical amplification was measured on a traditional two-wave mixing configuration. No optical amplification was observed in Bi-doped glass, while apparent broadband optical amplification between 1272 and 1336 nm was observed from Yb-Bi codoped glass with 980 nm laser diode excitation. The highest gain coefficient at 1272 nm of Yb-Bi codoped glass reached to 2.62 cm(-1). Yb-Bi codoped phosphate glass is a promising material for broadband optical amplification. (C) 2008 American Institute of Physics.

Nd：YbVO4晶体的拉曼光谱和荧光光谱研究

用群论的方法计算了Nd：YbVO4晶体的拉曼活性振动模数目，在室温下测得了其极化拉曼谱线，并指认了在不同几何配置下，各振动模式所对应的频率。同时，测得了室温下晶体的吸收谱，得到了中心波长为808am吸收峰的半高宽为12nm，并在J-O理论的基础上计算了晶体的光学参数，其三个晶场参数分别为Ω2=6．88945×10^-20cm^2。Ω4=4．13394×10^-20cm^2、Ω6=4．54503×10^-20cm^2，并由此得到^4F3／2能级的荧光寿命为178．69炉，1062nm处的荧光分支比为48．85％，积分发射截面为2．786710^-18cm^2。分别在808nm、940nm激发下测得晶体室温发射谱，观察到了Nd→Yb以及Nd←Yb间的能量传递现象。

构树种质资源遗传多样性SRAP分子标记研究

构树（Broussonetia papyrifera L.）为桑科（Moraceae）构树属（Broussonetia）落叶乔木，广泛分布于亚洲东部及太平洋岛屿。它是我国重要的经济林木，具有重要的经济价值，其树皮纤维品质优良，自古就是造纸的优良原料；叶片可用作饲料；果实具有重要的药用价值；环境适应性强，是迅速绿化荒山、荒滩和盐碱地的理想树种。因此对构树这些特性的深入研究和开发利用具有非常重要的实际应用价值。本研究以日本和国内构树主要分布区域的的10种生态型及杂交构树共23份材料，摸索并改进了构树DNA的提取方法，建立了稳定的SRAP分子标记体系，以杂交构树组培苗为材料从120对引物组合中筛选出条带信息较高的17对SRAP引物，以这些引物对23份构树材料进行PCR扩增和标记分析。 本研究取得的主要结果如下： （1）本实验首次将SRAP技术应用于构树的研究中，建立起构树稳定的SRAP-PCR反应体系；实验中对影响扩增的5个主要因素进行了优化，确定20 μL PCR反应体系中各因素最适浓度：模板DNA浓度80 ng/(20 μL)，Mg2+浓度2.0 mM，dNTP浓度0.6 mM，引物浓度0.8 mM，Taq 酶浓度1.5 U/(20 μL)。 （2）从120对引物组合中筛选出来的17对SRAP引物对21份不同生态型构树样本（21份材料指的是除两份杂交构树材料外的其它生态型构树，以下同）进行PCR扩增，共扩增出439条带，平均每对引物25.5条，其大小介于100～1,000 bp之间，其中多态性条带319条，占总数的72.67%。 （3）用Popgene1.32软件进行分析，计算出Shannon信息指数（I）值为0.2275（0.2042），物种水平的Nei基因多样性（H）值为0.1336（0.1436），表明各生态型构树之间的平均遗传多态性不高，中国大陆各生态型构树Shannon信息指数（I）值仅为0.1675（0.2271），物种水平的Nei基因多样性（H）值为0.1039（0.1540），群体遗传多样性较低，构树的遗传分化主要存在于中国和日本之间。 （4）用NTSYS-2.10e软件进行聚类分析，发现不同生态型构树按距离关系远近及分布区域可划分为不同类群。在遗传相似系数0.57附近，对21份材料进行聚类分析发现其可分为两个群体，一类为日本生态型，另一类为中国生态型，表明日本构树与中国野生种构树种源遗传相似性较小。中国各生态型构树在遗传相似系数0.91处可分为5类，总体而言，中国各地区之间的构树遗传相似度较高。对杂交构树分析表明，其亲缘关系与日本构树（母本）更接近。 （5）日本及杂交构树的SCAR标记。本研究找到两条日本及杂交构树的特异性条带，回收、测序，再根据序列往里重新设计引物，转变成稳定性更好，更直观的SCAR标记，这为挑选性状优良的日本及杂交构树提供重要的参考，对其育种有一定的指导意义。其中一条片段经与NCBI数据库比对发现与拟南芥磺基转移酶家族基因具有较高的同源性。

集胞藻PCC6803光激活异养生长必需基因s110886的研究

集胞藻PCC6803能够在微弱、短时光刺激的条件下利用葡萄糖进行异养生长,称为光激活异养生长(LAHG)。从其随机插入诱变文库中,筛选到3个不能进行光激活异养生长的突变株,通过反向PCR和测序确定突变基因全部为s110886。将s110886克隆到表达载体pET21-b,在大肠杆菌BL21(DE3)诱导表达,并对产物进行了纯化。用Western印迹法研究s110886在集胞藻PCC6803的表达情况,发现在完全黑暗和光照情况下,其表达水平几乎没有差异,并证明其编码产物分布于膜上。因此,s110886是一个

Long-Wavelength Emission InAs Quantum Dots Grown on InGaAs Metamorphic Buffers

In this work, InAs quantum dots (QDs) grown on a linear graded InGaAs metamorphic buffer layer by molecular beam epitaxy have been investigated. The growth of the metamorphic buffer layers was carefully optimized, yielding a smooth surface with a minimum root mean square of roughness of less than 0.98 nm as measured by atomic force microscopy (AFM). InAs QDs were then grown on the buffer layers, and their emission wavelength at room-temperature is 1.49 mu m as measured by photoluminescence (PL). The effects of post-growth rapid thermal annealing (RTA) on the optical properties of the InAs QDs were investigated. After the RTA, the PL peak of the QDs was blue-shifted and the full width at half maximum decreased.

Effect of different type intermediate layers on band structure and gain of Ga1-xInxNyAs1-y-GaAs quantum well lasers

Based on the band-anticrossing model, the effect of the strain-compensated layer and the strain-mediated layer on the band structure, the gain, and the differential gain of GaInNAs-GaAs quantum well lasers have been investigated. Different band-filling mechanisms have been illustrated. Compared to the GaInNAs-GaAs single quantum well with the same wavelength,, the introduction. (if the strain-compensated layer and the strain-mediated layer increases the transparency carrier density. However, these multilayer structures help to suppress the degradation of the differential gain.

Quantum-confined stark effect of vertically stacked self-assembled quantum discs

We study the electronic energy levels and probability distribution of vertically stacked self-assembled InAs quantum discs system in the presence of a vertically applied electric field. This field is found to increase the splitting between the symmetric and antisymmetric levels for the same angular momentum. The field along the direction from one disc to another affects the electronic energy levels similarly as that in the opposite direction because the two discs are identical. It is obvious from our calculation that the probability of finding an electron in one disc becomes larger when the field points from this disc to the other one.

Long-Wavelength Emission InAs Quantum Dots Grown on InGaAs Metamorphic Buffers

In this work, InAs quantum dots (QDs) grown on a linear graded InGaAs metamorphic buffer layer by molecular beam epitaxy have been investigated. The growth of the metamorphic buffer layers was carefully optimized, yielding a smooth surface with a minimum root mean square of roughness of less than 0.98 nm as measured by atomic force microscopy (AFM). InAs QDs were then grown on the buffer layers, and their emission wavelength at room-temperature is 1.49 mu m as measured by photoluminescence (PL). The effects of post-growth rapid thermal annealing (RTA) on the optical properties of the InAs QDs were investigated. After the RTA, the PL peak of the QDs was blue-shifted and the full width at half maximum decreased.

Dynamics of Multi-Stage Bladed Disks Systems

This paper presents a new and original method for dynamical analysis of multistage cyclic structures such as turbomachinery compressors or turbines. Each stage is modeled cyclically by its elementary sector and the interstage coupling is achieved through a cyclic recombination of the interface degrees of freedom. This method is quite simple to set up; it allows us to handle the finite element models of each stage's sector directly and, as in classical cyclic symmetry analysis, to study the nodal diameter problems separately. The method is first validated on a simple case study which shows good agreements with a complete 360 deg reference calculation. An industrial example involving two HP compressor stages is then presented. Then the forced response application is presented in which synchronous engine order type excitations are considered.