A NEW TYPE OF SILICON-ON-INSULATOR WITH A PERFECT SURFACE SILICON LAYER

A novel silicon structure consisting of a silicon-on-defect layer (SODL), with enhanced surface Hall mobility in the surface layer on a buried defect layer (DL), has been discovered [J. Li, Nucl. Instr. and Meth. B59/60 (1991) 1053]. SODL material was formed by using proton implantation and subsequent two-step annealing. The implantation was carried out with a Varian 350D ion implanter. Based on the discovery, a standard measurement method (current-voltage curve method) was adopted to measure the true resistivity value of the DL in order to replace the spreading resistivity measurement by which the true resistivity in seriously defective silicon cannot be obtained. By adopting the current-voltage current method, the true resistivity value of the DL is measured to be 4.2 x 10(9) OMEGA cm. The SODL material was proved to be a silicon-on-insulator substrate.

A transmission electron microscopy study of microstructural defects in proton implanted silicon

The microstructure of silicon on defect layer, a new type of silicon-on-insulator material using proton implantation and two-step annealing to obtain a high resistivity buried layer beneath the silicon surface, has been investigated by transmission electron microscopy. Implantation induced a heavily damaged region containing two types of extended defects involving hydrogen: {001} platelets and {111} platelets. During the first step annealing, gas bubbles and {111} precipitates formed. After the second step annealing, {111} precipitates disappeared, while the bubble microstructure still remained and a buried layer consisting of bubbles and dislocations between the bubbles was left. This study shows that the dislocations pinning the bubbles plays an important role in stabilizing the bubbles and in the formation of the defect insulating layer. (C) 1996 American Institute of Physics.

Growth of GaAs on Si by using a thin Si film as buffer layer

We report a novel technique for growing high-quality GaAs on Si substrate. The process involves deposition of a thin amorphous Si film prior to the conventional two-step growth. The GaAs layers grown on Si by this technique using metalorganic chemical vapor deposition exhibit a better surface morphology and higher crystallinity as compared to the samples gown by conventional two-step method. The full width at half maximum (FWHM) of the x-ray (004) rocking curve for 2.2 mu m thick GaAs/Si epilayer grown by using this new method is 160arcsec. The FWHM of the photoluminescence spectrum main peak for this sample is 2.1 meV. These are among the best results reported so far. In addition, the mechanism of this new growth method was studied using high-resolution transmission electron microscopy.

PROCESS OF PHOTOLUMINESCENCE AND PHOTOSTIMULATED LUMINESCENCE IN BAFBR-EU PHOSPHORS

The photoluminescence (PL) and photostimulated luminescence (PSL) of BaFBr: Eu phosphors are reported. In the photoluminescence of BaFBr:Eu, the emission of Eu2+, e-h recombination and Eu3+ have been observed, while in the photostimulated luminescence only the emission of Eu2+ was observed. This phenomenon may be explained well by the suggestion of a two-hand model for the host emission in which the host emission energy may transfer to Eu2+ difference of excitation in those two processes results in different transfer rates which makes the PL and PSL emission different.

PHOTOLUMINESCENCE SPECTRUM STUDY OF THE GAAS/SI EPILAYER GROWN BY USING A THIN AMORPHOUS SI FILM AS BUFFER LAYER

Recently, we reported successful growth of high-quality GaAs/Si epilayers by using a very thin amorphous Si film as buffer layer. In this paper, the impurity properties of this kind of GaAs/Si epilayers have been studied by using PL spectrum, SIMS and Hall measurement. Compared to a typical PL spectrum of the GaAs/Si epilayers grown by conventional two-step method, a new peak was observed in our PL spectrum at the energy of 1.462 eV, which is assigned to the band-to-silicon acceptor recombination. The SIMS analysis indicates that the silicon concentration in this kind of GaAs/Si epilayers is about 10(18) cm(-3). But its carrier concentration (about 4 x 10(17) cm(-3)) is lower than the silicon concentration. The lower carrier concentration in this kind of GaAs/Si epilayer can be interpreted both as the result of higher compensation and as the result of the formation of the donor-defect complex. We also found that the high-quality and low-Si-concentration GaAs/Si epilayers can be regrown by using this kind of GaAs/Si epilayer as substrate. The FWHM of the X-ray (004) rocking curve from this regrowth GaAs epilayer is 118 '', it is much less than that of the first growth GaAs epilayer (160 '') and other reports for the GaAs/Si epilayer grown by using conventional two-step method (similar to 200 '').

Competitions of magnetism and superconductivity in FeAs-based materials

Using the numerical unrestricted Hartree-Fock approach, we study the ground state of a two-orbital model describing newly discovered FeAs-based superconductors. We observe the competition of a (0, π) mode spin-density wave and the superconductivity as the doping concentration changes. There might be a small region in the electron-doping side where the magnetism and superconductivity coexist. The superconducting pairing is found to be spin singlet,orbital even, and coexisting sxy + dx~2-y~2 wave (even parity).

High-performance electroabsorption modulator

A 100-μm-long electroabsorption modulator monolithically integrated with passive waveguides at the input and output ports is fabricated through ion implantation induced quantum well intermixing, using only a two-step low-pressure metal-organic vapor phase epitaxial process. An InGaAsP/InGaAsP intra-step quantum well is introduced to the active region to improve the modulation properties. In the experiment high modulation speed and high extinction ratio are obtained simultaneously, the electrical-to-optical frequency response (E/O response) without any load termination reaches to 22 GHz, and extinction ration is as high as 16 dB.

Dislocation Reduction in GaN on Sapphire by Epitaxial Lateral Overgrowth

High quality GaN is grown on GaN substrate with stripe pattern by metalorganic chemical vapor deposition by means of epitaxial lateral overgrowth. AFM,wet chemical etching, and TEM experiments show that with a two-step ELOG procedure, the propagation of defects under the mask is blocked, and the coherently grown GaN above the window also experiences a drastic reduction in defect density. In addition, a grain boundary is formed at the coalescence boundary of neighboring growth fronts. The extremely low density of threading dislocations within wing regions makes ELOG GaN a potential template for the fabrication of nitride-based lasers with improved performance.

Single ridge waveguide electroabsorption modulated DFB laser for 2.5Gb/s transmission

In this paper we proposed a single ridge waveguide electroabsorption modulated distributed feedback laser (EML) for long-haul high-speed optical fiber communication system. This EML was successfully fabricated by two step metal organic vapor phase epitaxy (MOVPE) including selective area growth (SAG) and helium partially implantation. No obvious changes of the threshold current (< 0.2 mA), extinction ratio (< 0.1 dB), output power (< 0.2 dBm) and isolation resistance were achieved in the preliminary aging test. With 2.5 Gb/s NRZ modulation, no power penalty was observed after the optical signal was transmitted through 280 Km normal single mode fiber.

The SPER and characteristics of Si1-yCy alloys

\Si1-yCy alloys with carbon composition of 0.5 at.% were successfully grown on n-Si(100) substrate by solid phase epitaxy recraystallization. The result was presented in this paper. With the help of the SiO2 capping layer, rather uniform carbon profile in amorphous Si layer was obtained by dual-energy implantation. Since ion-flow was small and implantation time was long enough, the emergency of beta-SiC was avoided and the dynamic annealing effect was depressed. The pre-amorphization of the Si substrate increased the fraction of the substitutions carbon and the two-step annealing reduced point defects. As a result, Si1-yCy alloys with high quality was recrystallized on Si substrate.

Homogeneous Epitaxial Growth of N,N '-di(n-butyl)quinacridone Thin Films on Ag(110)

The structural evolution of the ordered N-N' dibutyl-substituted quinacridone (QA4C) multilayers (3 MLs) has been monitored in situ and in real time at various substrate temperatures using low energy electron diffraction (LEED) during organic molecular beam epitaxy (MBE). Experimental results of LEED patterns clearly reveal that the structure of the multilayer strongly depends on the substrate temperature. Multilayer growth can be achieved at the substrate temperatures below 300 K, while at the higher temperatures we can only get one ordered monolayer of QA4C. Two kinds of structures, the commensurate and incommensurate one, often coexist in the QA4C multilayer. With a method of the two-step substrate temperatures, the incommensurate one can be suppressed, and the commensurate, on the other hand, more similar to the (001) plane of the QA4C bulk crystal, prevails with the layer of QA4C increasing to 3 MLs. The two structures in the multilayers are compressed slightly in comparison to the original ones in the first monolayer.

Vc二步发酵新菌系B529-V6的构建及其分子生物学特性

从芽抱杆菌属、酵母属二十株菌中筛选到一株优良伴生菌B529，与新选育出的产酸菌V6构成一新菌系B529-V6。新菌系B529-V6表现出了较强的高浓度L-山梨糖耐受能力、较高的底物代谢速率和较高的2-KGA转化能力，在8％山梨糖浓度的发酵培养基中培养48h，糖酸转化率较对照菌系提高了5.94％；山梨糖浓度提高至10％，其生长代谢受影响程度较小，且能不同程度地利用葡萄糖和山梨醇为底物，合成维生素C前体-2-酮基-L-古龙酸（2-KGA），其发酵产物2-KGA经反相高效液相色谱分析其质量符合工业化生产要求。对新菌系生长代谢规律及调控进行了研究，4M3罐和300M3罐发酵实验表明：种子培养基的碳源、葡萄糖／山梨糖浓度比、氮源、生长因子、接种种液质量及环境因子，均可影响新菌系的生长代谢。4M3罐发酵，新菌系具有周期短、糖酸转化率高等特点，连续4批发酵平均转化率较对照菌系提高10.18％，周期缩短23.7％。在300M3罐发酵试运行期间，新菌系糖酸转化率达到90.10％，较原生产菌系提高3.95％，发酵周期平均缩短1.3小时，显示出了较高的应用价值，在东北制药总厂进行了推广应用。研究了新产酸菌V6的基本生物学特性，分析了GC moL％含量，165rDNA同源性，鉴定其在系统发育学上应归入Ketoguloigenium 属，暂命名为Ketogulonigenium sp．V6。选用限制性内切酶Hind IH对新产酸菌V6染色体DNA进行了部分消化，应用载体pGEM-3zf（+）构建了v6的基因文库。结合阳性转化子在以L－山梨糖为唯一碳源培养基上的生长特性，利用PCR技术从该基因文库中，筛选到一株含有L-山梨糖还原酶（sR）基因的阳性克隆，并利用pET-32a（+）表达载体，实现了sR酶基因在大肠杆菌AD494（DE3）中的表达。SDS-PAGE电泳分析测定SR融合蛋白分子量大约在65kD左右，除去硫氧化还原蛋白、S-Tag和His-Tag蛋白，可推测出天然sR酶蛋白分子量约53 kD左右，与从SR基因推测出的分子量大小相符。另外，SR酶学特性研究表明，还原型辅酶II（NADPH）是sR酶蛋白的最适电子供体，其最适反应pH为7.0，pH6.5时保持稳定，酶活力较高；最适反应温度为50 ℃，30 ℃时热稳定性较好；lmM的Cu~(2+)，Fe~(3+)和Mn~(2+)对该酶活抑制作用较大。

Study of turbulent heat transfer of aviation kerosene flows in a curved pipe at supercritical pressure

The now and heat transfer characteristics of China No. 3 aviation kerosene in a heated curved tube under supercritical pressure are numerically investigated by a finite volume method. A two-layer turbulence model, consisting of the RNG k-epsilon two-equation model and the Wolfstein one-equation model, is used for the simulation of turbulence. A 10-species kerosene surrogate model and the NIST Supertrapp software are applied to obtain the thermophysical and transport properties of the kerosene at various temperature under a supercritical pressure of 4 MPa. The large variation of thermophysical properties of the kerosene at the supercritical pressure make the flow and heat transfer more complicated, especially under the effects of buoyancy and centrifugal force. The centrifugal force enhances the heat transfer, but also increases the friction factors. The rise of the velocity caused by the variation of the density does not enhance the effects of the centrifugal force when the curvature ratios are less than 0.05. On the contrary, the variation of the density increases the effects of the buoyancy. (C) 2010 Elsevier Ltd. All rights reserved.

Splitting the Fast and Slow Motions in Molecular Dynamics Simulations Based on the Change of Cold Potential Well Bottom

The atomic motion is coupled by the fast and slow components due to the high frequency vibration of atoms and the low frequency deformation of atomic lattice, respectively. A two-step approximate method was presented to determine the atomic slow motion. The first step is based on the change of the location of the cold potential well bottom and the second step is based on the average of the appropriate slow velocities of the surrounding atoms. The simple tensions of one-dimensional atoms and two-dimensional atoms were performed with the full molecular dynamics simulations. The conjugate gradient method was employed to determine the corresponding location of cold potential well bottom. Results show that our two-step approximate method is appropriate to determine the atomic slow motion under the low strain rate loading. This splitting method may be helpful to develop more efficient molecular modeling methods and simulations pertinent to realistic loading conditions of materials.