Threshold behavior in backgating in GaAs metal-semiconductor field-effect transistors: Induced by limitation of channel-substrate junction to leakage current

An analytical model is proposed to understand backgating in GaAs metal-semiconductor field-effect transistors (MESFETs), in which the effect of channel-substrate (CS) junction is included. We have found that the limitation of CS junction to leakage current will cause backgate voltage to apply directly to CS junction and result in a threshold behavior in backgating effect. A new and valuable expression for the threshold voltage has been obtained. The corresponding threshold electric field is estimated to be in the range of 1000-4000 V/cm and for the first time is in good agreement with reported experimental data. More, the eliminated backgating effect in MESFETs that are fabricated on the GaAs epitaxial layer grown at low temperature is well explained by our theory. (C) 1997 American Institute of Physics.

Theoretical Analysis of Gain and Threshold Current Density for Long Wavelength GaAs-Based Quantum-Dot Lasers

Quantum dot gain spectra based on harmonic oscillator model are calculated including and excluding excitons. The effects of non-equilibrium distributions are considered at low temperatures. The variations of threshold current density in a wide temperature range are analyzed and the negative characteristic temperature and oscillatory characteristic temperature appearing in that temperature range are discussed. Also,the improvement of quantum dot lasers＇ performance is investigated through vertical stacking and p-type doping and the optimal dot density, which corresponds to minimal threshold current density,is calculated.

A 1.3μm Low-Threshold Edge-Emitting Laser with AlInAs-Oxide Confinement Layers

A 1.3μm low-threshold edge-emitting AlGaInAs multiple-quantum-well(MQW) laser with AlInAs-oxide confinement layers is fabricated.The Al-contained waveguide layers upper and low the active layers are oxidized as current-confined layers using wet-oxidation technique.This structure provides excellent current and optical confinement,resulting in 12.9mA of a low continuous wave threshold current and 0.47W/A of a high slope efficiency of per facet at room temperature for a 5-μm-wide current aperture.Compared with the ridge waveguide laser with the same-width ridge,the threshold current of the AlInAs-oxide confinement laser has decreased by 31.7% and the slope efficiency has increased a little.Both low threshold and high slope efficiency indicate that lateral current confinement can be realized by oxidizing AlInAs waveguide layers.The full width of half maximum angles of the Al-InAs-oxide confinement laser are 21.6° for the horizontal and 36.1° for the vertical,which demonstrate the ability of the AlInAs oxide in preventing the optical field from spreading laterally.

Ultralow Threshold Red Vertical-Cavity Surface-Emitting Lasers

国家自然科学基金

Low threshold GaAs/AlGaAs double Quantum Well Lasers

于2010-11-23批量导入

Pub/Sub系统中分布式复合事件检测技术研究

随着信息技术的发展，Pub/Sub系统由于具有异步和松耦合的特点，被越来越广泛的应用到金融、供应链管理、物流等领域。在这些应用中，用户对具有各种特定逻辑或时序关系的复合事件的订阅需求越来越迫切，这使得Pub/Sub系统中的分布式复合事件检测技术成为研究的热点，分布式复合事件检测技术包括复合订阅语言、复合匹配算法、以及订阅和事件的路由算法。 目前已有的Pub/Sub系统提供的复合订阅语言比较简单，对时序支持较弱，不能满足实际应用的需要，已有的复合匹配算法也不能有效的支持具有丰富时序关系的复合事件的检测。在路由方面，基于内容的Pub/Sub系统大都是在树结构或者无环图结构的覆盖网络上，采用基于过滤的原子路由方法，该路由方法需要将原子订阅传遍几乎整个网络，以减少订阅匹配的延迟，但这种路由方法很难适应网络的拓扑变化。而目前基于事件空间划分的路由方法不支持事件空间的动态划分和事件空间在不同服务器之间的移动，并且没有提供专门针对事件空间划分的复合事件检测方法。 本文在调研了各种应用需求的基础上，提出了能够表达事件丰富的时序关系、逻辑关系和事件实例关系的复合订阅语言，并且定义了两种事件排序方式。在消费语义采用配对模式的情况下，给出了该语言在两种事件排序方式下的检测结果集的定义。针对该复合订阅语言提出并实现了图结构和时间事件发生器相结合的复合匹配算法，该匹配算法使图结构可以有效的支持时序关系和非触发式事件的检测。在路由方面，首先实现了基于过滤的逆向路径转发的原子路由方法，并在此基础上，实现了就近检测协议，该协议优化了复合订阅匹配结构在网络中的部署。最后，设计和实现了基于事件空间划分的原子路由方法，该路由方法实现了事件空间的动态划分，并可以根据系统中服务器的负载情况实现事件空间的移动，从而有效的平衡服务器的负载。在此基础上，通过对复合订阅的拆分，并利用可移动的复合事件检测器实现了复合订阅的分布式部署和复合事件的分布式检测，同时通过对复合事件检测器的复用，进一步减少了网络负载和服务器的匹配负载。本文还通过实验验证了匹配算法和两种路由方法的性能和开销。