稀磁半导体(Ga, Mn)As磁光性质的研究

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

蓝宝石衬底上ZnO 薄膜的MVPE 生长及性能研究

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

Si 共掺杂和高温退火对(Ga,Mn)As 结构和磁性质的影响

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

ZnO 单晶的N 型掺杂研究

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

ZnO 薄膜生长及相关物性研究

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

气相传输法生长掺磷、掺锑ZnO 单晶

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

稀磁半导体(Ga,Mn)As和铁磁金属-半导体异质结Fe/GaAs铁磁相变过程的研究

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

MVPE ZnO 薄膜材料的制备及性能研究

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

氢等离子体处理对ZnO薄膜光电性能的影响

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

ZnO厚膜的金属源气相外延生长

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

In(Ga)N/GaN异质外延纳米结构的生长以及表征

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

Influence of ZnS and MgO Shell on the Photoluminescence Properties of ZnO Core/Shell Nanowire

Chinese Academy of Sciences；National Science Fund for Distinguished Young Scholar 60925016；National High Technology Research and Development program of China 2009AA034101；Postdoctoral Foundation 0971050000

Fe 和(Ga,Cr)As 薄膜的分子束外延生长及磁学性质

Submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-04-28T14:23:05Z No. of bitstreams: 1 鲁军_博士论文.pdf: 4237580 bytes, checksum: 3a1a5f0ea10b0895d92e102e4cdcf5d0 (MD5)

First-principles study on the structural and electronic properties of ultrathin ZnO nanofilms

First-principles calculations; ZnO nanofilms; Electronic properties; Quantum effects； NANOBELTS; NANORINGS; WURTZITE; ENERGY Abstract: Using first-principles density-functional calculations, we have studied the structural and electronic properties Of Ultrathin ZnO {0001} nanofilms. The structural parameters, the charge densities, band structures and density of states have been investigated. The results show that there are remarkable charge transfers from Zn to O atoms in the ZOO nanofilms. All the ZOO nanofilms exhibit direct wide band gaps compared with bulk counterpart, and the gap decreases with increased thickness of the nanofilms. The decreased band gap is associated with the weaker ionic bonding within layers and the less localization of electrons in thicker films. A staircase-like density of states occurs at the bottom of conduction band, indicating the two-dimensional quantum effects in ZnO nanofilms.

稀磁半导体（Ga,Mn)As 的超快磁光谱研究

Submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-06-07T02:59:47Z No. of bitstreams: 1 博士学位论文 － 朱永刚.pdf: 3575099 bytes, checksum: cb8ced7665a0624ff54bbfafa2be9c35 (MD5)