On the design and simulation of high speed electro-optic modulator based on SOI waveguide MOS dual capacitor structure

zhangdi于2010-03-29批量导入

SOI-based thermo-optic waveguide switch matrix with spot size converters

A SOI-based thermo-optic waveguide switch matrix worked at 1.55 mu m, integrated with spot size converters is designed and fabricated for the first time. The insertion loss and polarization dependent loss are less than 13dB and 2dB, respectively. The extinction ratio is larger than 19dB. The response time is less than 5 mu s and the power consumption of the switch cell is about 200mW.

The improvement of thick oxidized porous silicon layer growth process - art. no. 60290S

Oxidizing thick porous silicon layer into silicon dioxide is a timesaving and low-cost process for producing thick silicon dioxide layer used in silicon-based optical waveguide devices. The solution of H2O2 is proposed to post-treat thick porous silicon (PS) films. The prepared PS layer as the cathode is applied about 10 mA/cm(2) current in mixture of ethanol, HF, and H2O2 solutions, in order to improve the stability and the smoothness of the surface. With the low-temperature dry-O-2 pre-oxidizations and high-temperature wet O-2 oxidizations process, a high-quality SiO2 30 mu m thickness layer that fit for the optical waveguide device was prepared. The SEM images show significant improved smoothness on the surface of oxidized PS thick films, the SiO2 film has a stable and uniformity reflex index that measured by the prism coupler, the uniformity of the reflex index in different place of the wafer is about 0.0003.

Mode analysis of the UV-written channel waveguide - art. no. 60340J

The effective index method (EIM) was adopted to model the channel waveguide patterned by the UV in photosensitive silica film. The effective indexes of the different dimension symmetrical and asymmetrical channel waveguides were calculated, and the resource of the error of the method was pointed out. At last, the dimension rang to propagate single mode was presented.

Electroabsorption-modulated DFB laser integrated with dual-waveguide spot-size converter - art. no. 60200N

A 1.55-mu m ridge DFB laser and electroabsorption modulator monolithically integrated with a buried-ridge-stripe dual-waveguide spot-size converter at the output port for low-loss coupling to a cleaved single-mode optical fiber was fabricated by means of selective area growth, quantum well intermixing and dual-core technologies. These devices exhibit threshold current of 28 mA, side mode suppression ratio of 38.0 dB, 3-dB modulation bandwidth of 12.0 GHz, modulator extinction ratios of 25.0 dB dc. The output beam divergence angles of the spot-size converter in the horizontal and vertical directions are as small as 8.0 degrees x 12.6 degrees, respectively, resulting in 3.2 dB coupling loss with a cleaved single-mode optical fiber.

Design and Fabrication of Low-microwave loss Coplannar Waveguide and precise V groove on Silicon Substrate for Optoelectronic Packaging - art. no. 601938

Optoelectronic packaging has become a most important factor that influences the final performance and cost of the module. In this paper, low microwave loss coplanar waveguide(CPW) on high resistivity silicon(HRS) and precise V groove in silicon substrate were successfully fabricated. The microwave attenuation of the CPW made on HRS with the simple process is lower than 2 dB/cm in the frequency range of 0 similar to 26GHz, and V groove has the accuracy in micro level and smooth surface. These two techniques built a good foundation for high frequency packaging and passive coupling of the optoelectronic devices. Based on these two techniques, a simple high resistivity silicon substrate that integrated V groove and CPW for flip-chip packaging of lasers was completed. It set a good example for more complicate optoelectronic packaging.

Silicon-on-insulator based optical waveguide and integrated switch matrix

zhangdi于2010-03-29批量导入

A new method to realize configurable OADM by using Bragg waveguide grating

Our configurable optical add/drop multiplexers (OADM) are based on thermally tunable silicon-on-insulator (SOI) Bragg gratings. We have simulated the whole device and get ideal performance. We also tried experiments to explore the process of grating waveguide and got useful results.

Compact polarization-insensitive arrayed waveguide grating based on SOI material

A compact polarization-insensitive 8x8 arrayed waveguide grating with 100GHz channel spacing at 1.55 mu m is presented on the material of silicon on insulator (SOI). Increasing the epitaxial layer thickness can reduce the birefringence of the waveguide, but the wvaeguide's bend radius also increases at the same time. We choose the SOI wafer with 3.0 mu m epitaxial layer to reduce the device's size and designed the appropriate structure of rib wave-guides to eliminate the polarization dependant wavelength shift. Compared to the other methods of eliminating the polarization dependant wavelength shift, the method is convenient and easy to control the polarization without additional etching process. The index differences between TE0 and TM0 of straight and bend waveguides are 1.4x10(-5) and 3.9x10(-5), respectively. The results showed that the polarization dependant wavelength shift is 0.1nm, and the device size is 1.5x1.0 cm(2).

Structural optimizations of SOI-based single-mode rib waveguide bends

Effects of structure parameters on bend loss of rib silicon-on-insulator (Sol) bend waveguides have been analyzed by means of effective index method (EIM) and 2D bend loss formula. The simulation results indicate that the bend loss decreases with the increase of bend radius and waveguide width, as well as with the decrease of the step factor of the rib waveguide. Moreover, the optional structure parameters have been found when bend waveguides are single-mode.

A simple method to realize large-bandwidth and high-efficiency wavelength conversion in Si waveguide

Submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-06-04T07:06:36Z No. of bitstreams: 1 A simple method to realize large-bandwidth and high-efficiency wavelength conversion in Si waveguide.pdf: 277035 bytes, checksum: ca7e272b2286b305d385825417857f21 (MD5)

Reconfigurable Optical Add-Drop Multiplexer Based on Silicon Photonic Wire Waveguide

Submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-06-04T07:40:23Z No. of bitstreams: 1 Reconfigurable Optical Add-Drop Multiplexer Based on Silicon Photonic Wire Waveguide.pdf: 416355 bytes, checksum: 5b80992194ba9fa818a011244cec6363 (MD5)

Demonstration of high efficient tunable lasing with one photonic crystal W1 waveguide

Submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-06-04T08:18:15Z No. of bitstreams: 1 Demonstration of high efficient tunable lasing with one photonic crystal W1 waveguide.pdf: 564778 bytes, checksum: 1eb1246461d4a3fcc99e870bda90f9b4 (MD5)

Slow Light Effect and Multimode Lasing in a Photonic Crystal Waveguide Microlaser

The slow light effect in a photonic crystal waveguide is investigated theoretically and experimentally. Theoretical calculation indicates that there is a slow light region for the even mode, from which the resonance and lasing in a microcavity would benefit. A photonic crystal waveguide microlaser is fabricated, which is related to the group velocity of c/120.6.

Control of the photonic crystal waveguide over the beam profile of vertical-cavity surface-emitting lasers

The control of the photonic crystal waveguide over the beam profile of vertical-cavity surface-emitting lasers is investigated. The symmetric slab waveguide model is adopted to analyze the control parameters, of the beam profile in the photonic-crystal vertical-cavity surface-emitting laser (PC-VCSEL). The filling factor (the ratio of the hole diameter to the lattice constant) and the etching depth control the divergence angle of the PC-VCSEL, and the low filling factor and the shallow etching depth are beneficial to achieve the low-divergence-angle beam. Two types of PC-VCSELs with different filling factors and etching depths are designed and fabricated. The experimental results show that the device with a lower filling factor and a shallower etching depth has a lower divergence angle, which agrees well with the theoretical predictions.