光学表面的标量散射理论

简要论述了标量散射理论的研究进展做,着重介绍了Beckman的一维标量散射理论和几种典型的多层膜散射模型-非相关表面粗糙度模型、附加表面粗糙度模型和非相关体内不均匀模型,比较了这些模型在中心波长为632.8nm的11层高反膜的散射特性.结果表明,非相关体内的不均匀性引起反射能带边缘散射,反射能带内的散射主要由附加表面粗糙度引起.理想粗糙度对膜系反射带内的散射影响很小,对反射带边缘几乎无影响.预测了标量散射理论的应用领域及前景.

反射型磁光多层膜隔离器的频率响应及宽容性研究

通过传输矩阵法分析了材料介电常数的变化对于单缺陷结构的磁光多层膜隔离器性能的响，并提出了一种多缺陷结构的磁光多层膜结构．同单缺陷结构相比，多缺陷结构的旋转角的频谱响应带宽有很大增加，对于材料介电常数变化的宽容性得到了一个数量级的提高．同时这种多缺陷的结构对于膜层厚度的变化和入射角度也有很好的宽容性．

小波分析和人工神经网络在生态学研究中的应用

墨西哥帽子小波和Morlet小波在生态格局分析中的应用 本研究采用Monte Carlo方法，探讨了对小波分析的格局进行统计显著性检验的普遍方法。为了更好利用小波分析和了解两个常用小波--墨西哥帽子小波和Morlet小波在格局分析中的优缺点，用生态学研究中常见的4个模拟格局和东灵山辽东栎林的样带数据对这两个常用小波的特性进行了分析和比较。研究结果表明：墨西哥帽子小波能较好地分析样带中的斑块和间隙以及它们的位置信息，Morlet小波能较好地分析样带中尺度及其位置信息。不同的小波通常在尺度分析和斑块和间隙分析之间有平衡，所以最好的方法是结合两种小波的优点。小波分析在处理生态数据时，受所使用小波本身特性的制约。用墨西哥帽子小波进行格局分析时，小波能量谱的等值图上不同格局所对应的峰有可能相互重叠，当所分析的多尺度格局的规模差别不大时，所分析格局规模所对应的峰可能相互融合。这些小波能量谱的等值图上不同格局所对应峰的重叠和融合可能会导致格局分析量图上多个峰的相互融合和屏蔽。所以在使用小波分析做格局研究时，也应尽可能地结合小波能量谱和量图上的信息，以得到较全面和精确的格局分析信息。本研究的结论能为小波分析的应用提供指导。 应用二维小波分析对暖温带阔叶林辽东栎更新格局的研究 本研究介绍了一种二维网格空间数据分析方法一二维小波分析。该方法不仅能分析格局的等级结构，而且也能得到所分析结构的位置信息。小波系数等值图上不同格局规模的斑块和间隙可直接和不同尺度上的生态过程和生境条件相联系。小波方差从二维小波分析导出，小波方差可将四维的小波系数降至二维的小波方差函数，并量化所分析格局规模对整个格局的贡献。本研究用三个模拟格局分析了二维小波的特性及二维墨西哥帽子小波和Halo小波的特性。因为自身的特性，Halo小波比墨西哥帽子小波能提供更高的分辨率。本研究也将二维小波分析应用于暖温带阔叶林的辽东栎更新格局研究中，分析的结果表明：辽东栎的更新发生在辽东栎成树斑块和林窗斑块重叠区域。 用交互验证和独立验证来测试神人工经网络模拟水稻分檗动态的泛化能力 人工神经网络不是基于对所模拟过程的理解，而是依赖于对所分析数据的内部结构。所以人工神经网络通常被认为是经验模型而不能外推，而且在训练数据和验证数据的范围之外肯定不能精确地预测所模拟的过程。本研究通过对交互验证和独立验证神经网络模型性能的比较，测试了神经网络模型在预测水稻分檗动态方面的泛化能力。同时，也对几种提高神经网络泛化能力的技术进行了比较。研究结果表明：在训练数据的变量范围内，神经网络在预测水稻分檗动态方面具有泛化能力。较少的训练数据样本导致了对训练数据过度吻合的和不具泛化能力的神经网络。要能使神经网络在预测水稻分檗动态方面具有泛化能力，训练数据的样本量至少9倍于神经网络的权值数目。当神经网络有多个输入变量且训练数据不足以保证神经网络的泛化能力时，建议在训练之前，采用主成分分析、对应分析及类似技术压缩输入变量的个数。在压缩输入变量的个数之后，如果训练数据的样本量还不足以保证神经网络的泛化能力，就应采用提高神经网络泛化能力的技木，如：jittering和强制训练停止等，特别是神经网络与机理模型的复合模型。因为神经网络的泛化能力问题具有普遍性，所以我们的研究结论不只是适用于水稻分檗动态的预测，也适用于其它的农业和生态神经网络模型。

mRNA 很可能携带三维遗传信息

The forming mechanism of the three - dimensional structures of proteins，i.e.the mechanism of protein folding，is a basic problem in molecular biology which is still unsolved unitl now. In which a core problem is whether there is the three – dimensional genetic information that decide the three - dimensional structures of proteins. However, the research on this field has mot yet been reported. Recently，we made a comparative study on the folded structures of more than 70 mature messeneger RNAs (mRNAs) and the three - dimensional structures of the proteins encoded by them，it has been found that there exist marked correspondences between their featured structures in the following aspects: 1.The number of the structural units. An RNA molecule can form a secondary structure(stem and loop structure) by the folding and the base pairing of itself. The elementary structural unit of an RNA secondary structure is hairpin(or compound hair pin).The regular structural unit in the secondary structure of a protein is # alpha # - helix or #beta# - sheet . We have found that the hairpin number in the secondary structure of each mature mRNA is equal or approximately equal to the number of the regular secondary structural unis of the encoded protein. 2 .Turning region. Turn is a main structrual element in the secondary structure of a protein, which decides the backbone orientation of a protein molecule to some extent .Our analysis shows that the nucleotide sequence segments in an mRNA which encode the turns of the corresponding protein are overall situated in the turning regions of the mRNA secondary structure such as haipin，bulge loop or multibaranch loops. 3 .The arrangement of structural elements in space. In order to understand the backbone orientation of an RNA molecule and the arangement of its structural elements in space，we have modeled the three一dimensional structure of the mRNA molecule on SGI workstation based on its secondary structure.The result shows that the spatial arrangement of most of the nucleotide sequence segments encoding the structural elements of a protein is consistent with that of these stretural exements in the protein. For instance，the nucleotide sequences corresponding to each pleated sheet of a # beta # - sheet structure are close to each other in the mRNA secondary stucture and in the three - dimensional structure，although some of the nucleotide segments are far apart from each other in the one - dimensional sequence. For another instance，the two triplet codons of cysteines which form a disulphide bridge geneal1y are very close to each other in the mRNA folded structure. In addition，we also analyzed the locations of the codons proline - coding and the distrbution of the nucleotide sequences #alpha# - helix - coding in the folded structures of mRNAs . Some distribution laws have been found. All of these results suggest that the transfer of the genetic information from mRNA to protein not only is one – dimensional but also is three - dime ns ional. That is，there exists the genetic information that decide the three - dimensional structures of proteins. To a certain extent，we could say that the mRNA folding detemines the protein folding. Based on these results，it would be possible to predict the three - dimensional structures of proteins from the primary，secondary and tertiary structures of the m RNAs at a higher accuracy.And more important is that a new clue has been provided to uncover the“spatial coding" of the genetic information.

Electrically controllable RKKY interaction in semiconductor quantum wires

We demonstrate in theory that it is possible to all-electrically manipulate the RKKY interaction in a quasi-one-dimensional electron gas embedded in a semiconductor heterostructure, in the presence of Rashba and Dresselhaus spin-orbit interaction. In an undoped semiconductor quantum wire where intermediate excitations are gapped, the interaction becomes the short-ranged Bloembergen-Rowland superexchange interaction. Owing to the interplay of different types of spin-orbit interaction, the interaction can be controlled to realize various spin models, e.g., isotropic and anisotropic Heisenberg-like models, Ising-like models with additional Dzyaloshinsky-Moriya terms, by tuning the external electric field and designing the crystallographic directions. Such controllable interaction forms a basis for quantum computing with localized spins and quantum matters in spin lattices.

Quantum tunneling through planar p-n junctions in HgTe quantum wells

We demonstrate that a p-n junction created electrically in HgTe quantum wells with inverted band structure exhibits interesting intraband and interband tunneling processes. We find a perfect intraband transmission for electrons injected perpendicularly to the interface of the p-n junction. The opacity and transparency of electrons through the p-n junction can be tuned by changing the incidence angle, the Fermi energy and the strength of the Rashba spin-orbit interaction (RSOI). The occurrence of a conductance plateau due to the formation of topological edge states in a quasi-one-dimensional (Q1D) p-n junction can be switched on and off by tuning the gate voltage. The spin orientation can be substantially rotated when the samples exhibit a moderately strong RSOI.

Classical two-site fidelity and quantum phase transitions in the Ising model and the extended Hubbard model

In this Letter, the classical two-site-ground-state fidelity (CTGF) is exploited to identify quantum phase transitions (QPTs) for the transverse field Ising model (TFIM) and the one-dimensional extended Hubbard model (EHM). Our results show that the CTGF exhibits an abrupt change around the regions of criticality and can be used to identify QPTs in spin and fermionic systems. The method is especially convenient when it is connected with the density-matrix renormalization group (DMRG) algorithm. (C) 2008 Elsevier B.V. All rights reserved.

A simple route of morphology control and structural and optical properties of ZnO grown by metal-organic chemical vapour deposition

Employing the metal-organic chemical vapour deposition (MOCVD) technique, we prepare ZnO samples with different morphologies from the film to nanorods through conveniently changing the bubbled diethylzinc flux (BDF) and the carrier gas flux of oxygen (OCGF). The scanning electron microscope images indicate that small BDF and OCGF induce two-dimensional growth while the large ones avail quasi-one-dimensional growth. X-ray diffraction (XRD) and Raman scattering analyses show that all of the morphology-dependent ZnO samples are of high crystal quality with a c-axis orientation. From the precise shifts of the 2 theta. locations of ZnO (002) face in the XRD patterns and the E-2(high) locations in the Raman spectra, we deduce that the compressive stress forms in the ZnO samples and is strengthened with the increasing BDF and OCGF. Photoluminescence spectroscopy results show all the samples have a sharp ultraviolet luminescent band without any defects-related emission. Upon the experiments a possible growth mechanism is proposed.

Optical study of lateral carrier transfer in (In,Ga)As/GaAs quantum-dot chains

We have studied the lateral carrier transfer in a specially designed quantum dot chain structure by means of time-resolved photoluminescence (PL) and polarization PL. The PL decay time increases with temperature, following the T-1/2 law for the typical one-dimensional quantum system. The decay time depends strongly on the emission energy: it decreases as the photon energy increases. Moreover, a strong polarization anisotropy is observed. These results are attributed to the efficient lateral transfer of carriers along the chain direction. (c) 2008 American Institute of Physics.

Synthesis and photoluminescence, field emission properties of stalactite-like ZnS-ZnO composite nanostructures

Wurtzite stalactite-like quasi-one-dimensional ZnS nanoarrays with ZnO protuberances were synthesized through a thermal evaporation route. The structure and morphology of the samples are studied and the growth mechanism is discussed. X-ray diffraction (XRD) results show both the ZnS stem and the ZnO protuberances have wurtzite structure and show preferred [001] oriented growth. The photoluminescence and field emission properties have also been investigated. Room temperature photoluminescence result shows it has a strong green light emission, which has potential application for green light emitter. Experimental results also show that the stalactite arrays have a good field emission property, with turn-on field of 11.4 V/mu m, and threshold field of 16 V/mu m. The ZnO protuberances on the ZnS stem might enhance the field emission notably.

Hole-mediated electric field tunable high Curie temperature in Mn-doped wurtzite ZnO nanowires

The hole-mediated Curie temperature in Mn-doped wurtzite ZnO nanowires is investigated using the k center dot p method and mean field model. The Curie temperature T-C as a function of the hole density has many peaks for small Mn concentration (x(eff)) due to the density of states of one-dimensional quantum wires. The peaks of T-C are merged by the carriers' thermal distribution when x(eff) is large. High Curie temperature T-C > 400 K is found in (Zn,Mn)O nanowires. A transverse electric field changes the Curie temperature a lot. (Zn,Mn)O nanowires can be tuned from ferromagnetic to paramagnetic by a transverse electric field at room temperature. (c) 2007 American Institute of Physics.

Design of plasmonic back structures for efficiency enhancement of thin-film amorphous Si solar cells

Metallic back structures with one-dimensional periodic nanoridges attached to a thin-film amorphous Si (a-Si) solar cell are numerically studied. At the interfaces between a-Si and metal materials, the excitation of surface-plasmon polaritons leads to obvious absorption enhancements in a wide near-IR range for different ridge shapes and periods. The highest enhancement factor of the cell external quantum efficiency is estimated to be 3.32. The optimized structure can achieve an increase of 17.12% in the cell efficiency. (C) 2009 Optical Society of America

Synthesis and optical properties of europium-doped ZnS: Long-lasting phosphorescence from aligned nanowires

Quasi-aligned Eu2+-doped wurtzite ZnS nanowires on Au-coated Si wafers have been successfully synthesized by a vapor deposition method under a weakly reducing atmosphere. Compared with the undoped counterpart, incorporation of the dopant gives a modulated composition and crystal structure, which leads to a preferred growth of the nanowires along the [0110] direction and a high density of defects in the nanowire hosts. The ion doping causes intense fluorescence and persistent phosphorescence in ZnS nanowires. The dopant Eu2+ ions form an isoelectronic acceptor level and yield a high density of bound excitions, which contribute to the appearance of the radiative recombination emission of the bound excitons and resonant Raman scattering at higher pumping intensity. Co-dopant Cl- ions can serve not only as donors, producing a donor-acceptor pair transition with the Eu2+ acceptor level, but can also form trap levels together with other defects, capture the photoionization electrons of Eu2+, and yield long-lasting (about 4 min), green phosphorescence. With decreasing synthesis time, the existence of more surface states in the nanowires forms a higher density of trap centers and changes the crystal-field strength around Eu2+. As a result, not only have an enhanced Eu2+ -4f(6)5d(1)-4f(7) intra-ion transition and a prolonged afterglow time been more effectively observed (by decreasing the nanowires' diameters), but also the Eu2+ related emissions are shifted to shorter wavelengths.

Raman scattering from GaP nanowires

A complete Raman study of GaP nanowires is presented. By comparison with the Raman spectra of GaP bulk material, microcrystals and nanoparticles, we give evidence that the Raman spectrum is affected by the one-dimensional shape of the nanowires. The Raman spectrum is sensitive to the polarization of the laser light. A specific shape of the overtones located between 600 and 800 cm(-1) is actually a signature of the nanowires. Some phonon confinement and thermal behavior is also observed for nanowires.

Fabrication and analysis of 2x2 thermo-optic SOI waveguide switch with low power consumption and fast response by anisotropy chemical etching

A low power consumption 2 x 2 thermo-optic switch with fast response was fabricated on silicon-on-insulator by anisotropy chemical etching. Blocking trenches were etched on both sides of the phase-shifting arms to shorten device length and reduce power consumption. Thin top cladding layer was grown to reduce power consumption and switching time. The device showed good characteristics, including a low switching power of 145 mW and a fast switching speed of 8 +/- 1 mus, respectively. Two-dimensional finite element method was applied to simulate temperature field in the phase-shifting arm instead of conventional one-dimensional method. According to the simulated result, a new two-dimensional index distribution of phase-shifting arm was determined. Consequently finite-difference beam propagation method was employed to simulate the light propagation in the switch, and calculate the power consumption as well as the switching speed. The experimental results were in good agreement with the theoretical estimations. (C) 2004 Elsevier B.V. All rights reserved.