温度对草鱼能量收支的影响

于1992年4月-1992年5月在22，26及3℃下，以莴苣叶为食物，不限量摄食，测定草鱼的能量收支。结果表明，草鱼摄食率及生长率均随温度上升而增加；最大摄食率（Cw：％　W／d）与水温（T：℃）的关系为：CW=0．0405T2.324；温度对食物能分配于能量收支各组分的比例没有显著影响，在3个温度下测定的平均能量收支式为：100C=29.89F＋3．30U＋52．48R十14．34G，式中C为食物能，F为排粪能，U为排泄能，R为代谢能，G为生长能。

Differential expression of three Paralichthys olivaceus Hsp40 genes in responses to virus infection and heat shock

Heat shock proteins (Hsps) are a family of highly conserved cellular proteins present in all organisms, mediating a range of essential housekeeping and cytoprotective functions as well-known molecular chaperons and recently as regulators of the immune response. By subtractive suppression hybridization, three Hsp40 homologues have been identified in the flounder (Paralichthys olivaceus) embryonic cells (FEC) after treatment with UV-inactivated turbot (Scophthalmus maximus L.) rhabdovirus (SMRV), termed PoHsp40A4, PoHsp40B6 and PoHsp40B11, whose encoded proteins all possess the conserved DnaJ domain, a signature motif of the Hsp40 family. Based on different protein structure and phylogenetic analysis, they can be categorized into two subfamilies, PoHsp40A4 for Type I Hsp40, PoHsp40B6 and PoHsp40B11 for Type 11 Hsp40. Further expression analysis revealed two very different types of kinetics in response either to heat shock or to virus infection, with a marked induction for PoHsp4OA4 and a weak one for both PoHsp40B6 and PoHsp40B11. A very distinct tissue distribution of mRNA was also revealed among the three genes, even between PoHsp40B6 and PoHsp40B11. This is the first report on the transcriptional induction of Hsp40 in virally stimulated fish cells, and the differential expressions might reflect their different roles in unstressed and stressed cells. (c) 2005 Elsevier Ltd. All rights reserved.

Efficiency of constructed wetlands in decontamination of water polluted by heavy metals

A twin-shaped constructed wetland (CW) comprising a vertical flow (inflow) chamber with Cyperus alternifolius followed by a reverse-vertical flow (outflow) chamber with Villarsia exaltata was assessed for decontamination of artificial wastewater polluted by heavy metals. After application of Cd, Cu, Pb, Zn over 150 days, together with Al and Mn during the final 114 days, no heavy metals with the exception of Mn could be detected in either the drainage zone at the bottom, shared by both chambers, or in the effluent. The inflow chamber was, therefore, seen to be predominantly responsible for the decontamination process of more toxic metal species with final concentrations far below WHO drinking-water standards. About one-third of the applied Cu and Mn was absorbed, predominantly by lateral roots of C. alternifolius. Lower accumulation levels were observed for Zn (5%), Cd (6%), Al (13%). and Pb (14%). Contents of Cd, Cu, Mn, and Zn in soil were highest in top layer, while Al and Pb were evenly distributed through the whole soil column. Metal species accumulating mainly in the top layer can be removed mechanically. A vertical flow CW with C. alternifolius is an effective tool in phytoremediation for treatment of water polluted with heavy metals. (C) 2002 Elsevier Science B.V. All rights reserved.

Effects of the stocking density and body size of the mitten crab (Eriocheir sinensis) on aquatic plant biomass

Experiments in tanks and cages were conducted to examine the effects of stocking density and body size of the Mitten crab (Eriocheir sinensis) on transplanted submersed macrophyte biomass. The early juvenile crab with 7.0 +/-0.6 mm. carapace width (CW) had little effect on plant biomass, regardless of the stocking densities. However, larger crabs (CW: 18.0 +/-2.2,35.0 +/-3.6, and 60.0 +/-5.7 mm) significantly influenced plant biomass, especially at large stocking densities. Predictive models, using crab body size and stocking density, were generated to demonstrate effect of the mitten crab on the changes Of plant biomass. The results indicate that dense mitten crab populations may adversely affect aquatic plant communities, particularly when its animal food resources are scarce.

The growth patterns of juvenile and precocious Chinese mitten crabs, Eriocheir sinensis (Decapoda, Grapsidae), stocked in freshwater lakes of China

Stocking experiments with Eriocheir sinensis were conducted in two small, shallow lakes to study its growth pattern in 1994-1997. For the initially immature crabs, carapace width (CW) increases from 21.2 +/- 0.4 mm (mean +/- s.e.) for females and 22.3 +/- 0.5 mm for males in January, to 65.4 +/- 0.5 mm for females and 66.9 +/- 0.6 mm for males in October. There is no significant difference in CW and carapace length (CL), although there is a large difference in body weight (BW) between sexes in every month from January to August when crabs are juvenile, however, there are significant differences in CW, CL. and BW between sexes after September when the crabs become sexually mature. The growth curve from January to October fits a logistic equation and may be expressed as CW = 75.7 (1 + exp (0.914 - 0.011t))(-1) for females, and CW = 77.5 (1 + exp (0.889 - 0.011t))-1 for males, where CW is in mm, t in days. For precocious crabs (reaching maturity by the first autumn, CW does not change much from January to July, which indicates that precocious crabs stop growing. Like juveniles, the precocious crabs show no differences in CW and CL, but do show a statistically significant difference in BW between sexes.

光纤环形谐振腔频率响应分析及光纤环形激光器

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

Quantitative strain characterization of SiGe heterostructures by high-resolution transmission electron microscopy

We report the quantitative strain characterization in semiconductor heterostructures of silicon-germaniums (Si(0.76)Geo(0.24)) grown on Si substrate by an ultra-high vacuum chemical vapor deposition system. The relaxed SiGe virtual substrate has been achieved by thermal annealing of the SiGe film with an inserted Ge layer. Strain analysis was performed using a combination of high-resolution transmission electron microscopy and geometric phase analysis.

Directional emission InP/GaInAsP square-resonator microlasers

InP/GaInAsP square-resonator microlasers with an output waveguide connected to the midpoint of one side of the square are fabricated by standard photolithography and inductively-coupled-plasma etching technique. For a 20-mu m-side square microlaser with a 2-mu m-wide output waveguide, cw threshold current is 11 mA at room temperature, and the highest mode Q factor is 1.0 X 10(4) measured from the mode linewidth at the injection current of 10 mA. Multimode oscillation is observed with the lasing mode wavelength 1546 nm and the side-mode suppression ratio of 20 dB at the injection current of 15 mA. (C) 2008 Optical Society of America

Realization of extremely broadband quantum-dot superluminescent light-emitting diodes by rapid thermal-annealing process

The first demonstration, to our knowledge, of the creation of ultrabroadband superluminescent light-emitting diodes using multiple quantum-dot layer structure by rapid thermal-annealing process is reported. The device exhibits a 3 dB emission bandwidth of 146 nm centered at 984 mm with cw output power as high as 15 mW at room temperature corresponding to an extremely small coherence length of 6.6 mu m. (C) 2008 Optical Society of America.

High-performance 2 mm gate width GaNHEMTs on 6H-SiC with output power of 22.4 W @ 8 GHz

Optimized AlGaN/AlN/GaN high electron mobility transistors (HEMTs) structures were grown on 2-in semi-insulating (SI) 6H-SiC substrate by metal-organic chemical vapor deposition (MOCVD). The 2-in. HEMT wafer exhibited a low average sheet resistance of 305.3 Omega/sq with a uniformity of 3.85%. The fabricated large periphery device with a dimension of 0.35 pm x 2 nun demonstrated high performance, with a maximum DC current density of 1360 mA/mm, a transconductance of 460 mS/mm, a breakdown voltage larger than 80 V, a current gain cut-off frequency of 24 GHz and a maximum oscillation frequency of 34 GHz. Under the condition of continuous-wave (CW) at 9 GHz, the device achieved 18.1 W output power with a power density of 9.05 W/mm and power-added-efficiency (PAE) of 36.4%. While the corresponding results of pulse condition at 8 GHz are 22.4 W output power with 11.2 W/mm power density and 45.3% PAE. These are the state-of-the-art power performance ever reported for this physical dimension of GaN HEMTs based on SiC substrate at 8 GHz. (c) 2008 Elsevier Ltd. All rights reserved.

Experimental study on a diode-pumped passively mode-locking Nd : GdVO4/SESAM laser

We demonstrate a low-threshold and efficient diode-pumped passively continuous wave (CW) mode-locked Nd:GdVO4 laser with a reflective semiconductor saturable absorber mirror (SESAM). The threshold for the continuous wave was 0.36 W, and it is the lowest threshold for a continuous wave in a passively mode-locked Nd:GdVO4 laser to our knowledge. The maximum average output power of 1.82 W was obtained at a pump power of 6.65 W with a slope efficiency of about 29%. The CW mode-locked pulse duration was measured to be about 10.5 ps with a 116-MHz repetition rate.

Continuous-wave operation of GaN based multi-quantum-well laser diode at room temperature

Room-temperature operation of cw GaN based multi-quantum-well laser diodes (LDs) is demonstrated. The LD structure is grown on a sapphire (0001) substrate by metalorganic chemical vapour deposition. A 2.5 mu m x 800 mu m ridge waveguide structure is fabricated. The electrical and optical characteristics of the laser diode under direct current injection at room temperature are investigated. The threshold current and voltage of the LD under cw operation are 110mA and 10.5V, respectively. Thermal induced series resistance decrease and emission wavelength red-shift are observed as the injection current is increased. The full width at half maximum for the parallel and perpendicular far field pattern (FFP) are 12 degrees and 32 degrees, respectively.

High performance 1689-nm quantum well diode lasers

1689-nm diode lasers used in medical apparatus have been fabricated and characterized. The lasers had pnpn InP current confinement structure, and the active region consisted of 5 pairs of InGaAs quantum wells and InGaAsP barriers. Stripe width and cavity length of the laser were 1.8 and 300 pm, respectively. After being cavity coated. and transistor outline (TO) packaged, the lasers showed high performance in practice. The threshold current was about 13 +/- 4 mA, the operation current and the lasing spectrum were about 58 6 mA and 1689 +/- 6 nm at 6-mW output power, respectively. Moreover, the maximum output power of the lasers was above 20 mW.

Equilateral-Triangle and Square Resonator Semiconductor Microlasers

The characteristics of equilateral-triangle resonator (ETR) and square resonator microlasers are reported, which are potential light sources in the photonic integrations. Based on the numerical simulations, we find that high-efficiency directional emission can be achieved for the triangle and square microlasers by directly connecting an output waveguide to the resonators. The electrically injected InP/InGaAsP ETR and square resonator microlasers with a 2-mu m-wide output waveguide were fabricated by standard photolithography and inductively coupled plasma etching techniques. Room-temperature continuous-wave (CW) operations were achieved for the ETR microlasers with the side length from 10 to 30 mu m and the square resonator microlasers with the side length of 20 mu m. The output power versus CW injection current and the laser spectra are presented for an ETR microlaser up to 310 K and a square resonator microlaser to 305 K. The lasing spectra with mode wavelength intervals as that of whispering-gallery-type modes and Fabry-Perot modes are observed for two square lasers, which can lase at low temperature and room temperature, respectively.

Electrically Pumped Room-Temperature Pulsed InGaAsP-Si Hybrid Lasers Based on Metal Bonding

A pulsed InGaAsP-Si hybrid laser is fabricated using metal bonding. A novel structure in which the optical coupling and metal bonding areas are transversely separated is employed to integrate the silicon waveguide with an InGaAsP multi-quantum well distributed feedback structure. When electrically pumped at room temperature, the laser operates with a threshold current density of 2.9 kA/cm(2) and a slope efficiency of 0.02 W/A. The 1542 nm laser output exits mainly from the Si waveguide.