Surface roughness characterization of soft x-ray multilayer films on the nanometer scale

The soft x-ray reflectivity of multilayer films is affected by the surface roughness on the transverse nanometer scale. Scanning tunneling microscopy (STM) is an ideal instrument for providing high-lateral-resolution roughness measurements for soft x-ray multilayer films that cannot be obtained with other types of instruments on the transverse nanometer scale. The surface roughnesses of Mo/Si, Mo/C, and W/Si soft x-ray multilayer films prepared by an ion-beam-sputtering technique were measured with a STM on the vertical and transverse attributes. The film roughnesses and average spatial wavelengths added to the substrates depend on the multilayer film fabrication conditions, i.e., material combinations, number of layers, and individual layer thickness. These were estimated to lead to a loss of specular reflectivity and variations of the soft x-ray scattering angle distribution. This method points the way to further studies of soft x-ray multilayer film functional properties and can be used as basic guidance for selecting the best coating conditions in the fabrications of soft x-ray multilayer films. (C) 1996 American Vacuum Society.

膨胀土化学改性实验研究

Expansive soil is a kind of typical unsaturated soil with characteristics of high swelling-shrinking deformation, cracks and over consolidation. It is very harmful to civil engineering, As a new processing method deal with expansive soil, Chemistry treatment has widespread applied in developed countries such as Europe and America, and also gained remarkable result. Based on the embankment filling soil improving testing projects in Meng-Xin freeway, this paper proposed a new processing method to expansive soil embankment wrapped with PAS-treated soil, experimental study of expansive soil chemical improved by PAS is been carried out. The water content change is the external factor which causes expansive soil to have swelling-shrinkage deformation. this reflected that the soil body swelling-shrinkage characteristic mainly depends on its mineral ingredient and the soil-water mutual function. This paper takes expansive soil as one kind of ordinary high plastic clay from angle of clay-water mutual function explained the expansive soil swelling-shrinkage deformation mechanism on microscopic. And take this swelling-shrinkage mechanism as the master line, Cooperates with the China Academy of Chemistry, we developed the new method PAS treatment, trough ionic exchange, joint, package and flocculation, the stronger static electricity function weakened the level through adsorption and the stronger static electricity function, PAS can weakened the negative charge repulsion between levels, causes the electric potential to reduce, diffusion layer thickness to be thinner, and improves the water affinity performance of expansive soil effectively. Moreover the space network architecture compromised with PAS and soil enhanced the joint strength between the clay particles , enable the soil body to have comparatively high strength and the distortion rate. pointed proposed the PAS modified principle. Combine with the construction of experimented road, this paper sums up and presents the construction craft and technology requirement of PAS treatment to expansive soil embankment. Through many experimental studied the basic physical property, the intensity characteristic and water stability changes of expansive soil and PAS-treated soil. The results of study indicate that adding lime into the expansive soil can reduce the content of clay gain obviously, reduce the plasticity notably, increase the strength greatly, control the property of swelling and shrinking effectively, and can meliorate the stability of sucking water clearly. Simultaneity PAS don’t change the cultivate capacity of the soil, the modified slope of the embankment can adopt plant fixed slope method as ecology protection. Finally the processing effect of use different treatment has analyzed through numerical simulation, summarized the PAS chemical wrapping treatment process in the actual project application, and appraised its processing effect and the project efficiency. The research indicated that PAS chemical treatment is one effective method to improve expansive soil. Compare with long-distance replacement, especially in the high plastic expansive soil massive distribution area, PAS treatment has the very greatly economical superiority to be promoted. The study in the paper not only afforded technique method to Meng-Xin expressway construction but also important for improvement of the expressway construction theory in swelling soil areas. Key words: PAS; expansive soil; swelling-shrinkage deformation mechanism; wrapping embankment; chemical modified treatment.

砂泥岩薄互层储层预测方法与应用研究

With the deeply development of exploration and development in petroleum in China, new increasing reserves are found in old oil fields and the verge of the old ones through re-study of geological property. It is more and more important to discovery and develop thin layer or thin inter-bedded layers reservoirs. All of the targets are thin sand-shale inter-bedded reservoirs and the core technology is reservoir predictions between wells in thin sand-shale inter-bedded layers. The continuity of the thin sand-shale inter-bedded layers in space or separating and heterogeneity is the key of reservoir geology research. The seismic reflection, high resolution analysis method and inversion method to thin sand-shale inter-bedded layers are thorough discussed and deeply studied in this paper to try to find the methods and resolutions of reservoir geology research. The below is followed. 1. Based on the pre-research of other people, five models are created: the sand sphenoid body, interlay sandstone and interlay shale of the equal thickness, interlay sandstone of the equal thickness and interlay shale of the unequal thickness, interlay sandstone of the unequal thickness and interlay shale of the unequal thickness, interlay sandstone of the changing thickness in sequence and interlay shale of the changing thickness in sequence. Then the study of the forward modeling are conducted on the thin layer and thin inter-bedded layers geological characters and seismic reflections including amplitude, frequency, phase, wave shape and time-frequency responding in the domains of time and frequency. The affect of petro-physics difference of layers, single thin layer thickness, thickness of inter-bedded, layer number of inter-bedded, incident wavelet domain frequency and types, sample interval to seismic reflection characters, frequency spectrum and time-frequency respond of reflectivity is theoretically discussed. 2. Qualitatively analyzing the sedimentary rhythm of the thin inter-bedded layers in vertical orientation and computing the single layer thickness or the average thickness with the method of generalized S transform. Identifying the reflecting interface or lithology interface using the amplitude value of amplitude spectrum domain frequency. 3. Based on the seismic respond of thin sand-shale inter-bedded layers, bring out the high resolution analysis method of seismic data in thin sand-shale inter-bedded layers using wavelet analysis and the idea of affecting low and high frequency with middle frequency. Then analyzing the effect to the method and testing some wavelets in the method. This method is applied to the theoretical models and the field data. 4. Bring forward one improved very fast simulated annealing method (IVFSA) to resolve the problem nonlinearity and multi-parameters of the inversion in thin inter-bedded layers. And IVFSA is more productive and higher precision than general ways. 5. New target constrained function is used in the inversion based on the property of the inversion in thin inter-bedded layers. 6. Making the full use of geological and logging information, IVFSA and the new function are applied in the non-linear inversion to improve reservoir prediction and evaluation in thin inter-bedded formations combined with the idea of logging and seismic inversion. This method was applied to the field data and got good results.

地震反射界面形态与介质各向异性属性联立成像：地震反射波旅行时与偏振信息综合反演

It has been a difficult problem faced by seismologists for long time that how exactly to reconstruct the earth's geometric structure and distribution of physical attributes according to seismic wave's kinematical and dynamic characteristics, obtained in seismological observation. The jointing imaging of seismic reflector and anisotropy attributes in the earth interior is becoming the research hot spot. The limitation of shoot and observation system makes that the obtained seismic data are too scarce to exactly reconstruct the geological objects. It is popular that utilizing only seismic reflection traveltimes or polarizations information make inversion of the earth's velocity distribution by fixing seismic reflector configuration (vice versa), these will lead to the serious non-uniqueness reconstruction due to short of effective data, the non-uniqueness problem of reconstructing anisotropy attributes will be more serious than in isotropy media. Obviously it is not enough to restrict the media structure only by information of seismic reflection traveltimes or polarizations, which even sometimes will lead to distorted images and misinterpretation of subsurface structure. So we try to rebuild seismic reflection structure (geometry) and media anisotropic structure (physics) in the earth interior by jointing data of seismic wave kinematics and dynamics characteristics, we carry out the new experiment step by step, and the research mainly comprises of two parts: one is the reconstruction of P-wave vertical velocity and anisotropic structure(Thomsen parameter s and 8) in the transversely isotropic media with vertical symmetrical axis(VTI) by fixing geometrical structure, and the other is the simultaneous inversion of the reflector surface conformation and seismic anisotropic structure by jointing seismic reflection traveltimes and polarizations data. Simulated annealing method is used to the first research part, linear inversion based on BG theory and Simulated annealing are applied to the second one. All the research methods are checked by model experiments, then applied to the real data of the wide-angle seismic profile from Tunxi, Anhui Province, to Wenzhou, Zhejiang Province. The results are as following The inversion results based on jointing seismic PP-wave or PSV-wavereflection traveltimes and polarizations data are more close to real model than themodels based simply on one of the two data respectively. It is shown that the methodwe present here can effectively reconstruct the anisotropy attributes in the earth'sinterior when seismic reflector structure is fixed.The layer thickness, P-wave vertical velocity and Thomsen anisotropicparameters {s and 8) could be resolved simultaneously by jointing inversion ofseismic reflection traveltimes and polarizations with the linear inversion methodbased on BG theory.The image of the reflector structure, P-wave vertical velocity and theanisotropy parameters in the crust could be obtained from the wide-angle seismicprofile from Tunxi (in Anhui Province), to Wenzhou (in Zhejiang Province). Theresults reveal the difference of the reflector geometrical structure and physicalattributes in the crust between Yangtze block and Cathaysia block, and attempt tounderstand the characteristics of the crustal stress field in the areas.

Influence of the thickness ratio of air layer to liquid layer on the onset of Benard-Marangoni convection

An experimental investigation of the onset of Benard-Marangoni convection has been performed in a liquid layer of rectangular configuration. The critical temperature difference was measured via the detections of both temperature field pattern (IR-imaging) on the free surface and fluid convection (PIV) in the liquid layer. The critical temperature difference or the critical Marangoni number was given. The experiments were performed for a fixed depth of air layer and a changeable depth of the liquid layer, and then the influence of the thickness ratio of the air layer to liquid layer on the Marangoni instability was studied.

Influence Of Free Surface Curvature Of A Liquid Layer On The Critical Marangoni Convection

The Pearson instability was suggested to discuss the onset of Marangoni convection in a liquid layer of large Prandtl number under an applied temperature difference perpendicular to the free surface in the microgravity environment. In this case, the temperature distribution on the curved free surface is nonuniform, and the thermocapillary convection is induced and coupled with the Marangoni convection. In the present paper the effect of volume ratio of the liquid layer on the critical Marangoni convection and the corresponding spatial variation of the convection structure in zero-gravity condition were numerically investigated by two-dimensional model. (C) 2008 Elsevier Ltd. All rights reserved.

Experimental Study on Bénard-Marangoni Convection in Double Immiscible Liquid Layer

An experimental investigation of Bénard-Marangoni convection has been performed in double immiscible liquid layers of rectangular configuration on the ground. The two kinds of liquid are 10cst silicon oil and FC-70 respectively. The size of rectangular chamber is 100mm×40mm in horizontal cross-section. The evolution processes of convection are observed in the differential thickness ratio of two liquid layers. The critical temperature difference was measured via the detections of fluid convection by a particle image velocimetry (PIV) in the vertical cross-section of the liquid layer. The critical temperature difference or the critical Marangoni number was given. And the influence of the thickness ratio of two liquid layers on the convection instability was discussed. The evolution processes of patterns and temperature distributions on the interface are displayed by using thermal liquid crystal. The velocity distributions on the interface were also obtained. In comparison with the thermocapillary effect, the effect of buoyancy convection will relatively increase when the depth of the liquid layer increases. Because of the coupling of buoyancy and thermocapillary effect, the convection instability is much more complex than that in the microgravity environment. And the critical convection depends on the change of the thickness of liquid layers and also the change of thickness ratio of two liquid layers.

The Effect of the Thickness of Fe2 Al5 Phase Layer at Fe/Al Interface on the Mechanics Behavior of Hot Dip Aluminizing Coating

Hot Dip Aluminized Coatings with different thickness were prepared on Q235 steel in aluminum solutions with different temperature for certain time. Through tensile tests and in-situ SEM observations, the effect of the coating's microstructure on the tensile strength of the samples was studied. It was disclosed at certain aluminum solution temperature,transaction layers mainly composed of Fe2 Al5 phase got thicker with time prolonging, and this changed initial crack's extending direction from parallel with to vertical with stretching direction. The change in crack direction decreased tensile strength of samples, thus made the coating easy to break. It was concluded that the existence of thick Fe2 Al5 phase layer was the basic reason for the lowering of tensile strength of the coating.

Impact of thickness of GaN buffer layer on properties of AlN/GaN distributed Bragg reflectors grown by metalorganic chemical vapor deposition

We studied the impact of the thickness of GaN buffer layer on the properties of distributed Bragg reflector (DBR) grown by metalorganic chemical vapor deposition (MOCVD). The samples were characterized by using metallographic microscope, transmission electron microscope (TEM), atomic force microscopy (AFM), X-ray diffractometer (XRD) and spectrophotometer. The results show that the thickness of the GaN buffer layer can significantly affect the properties of the DBR structure and there is an optimal thickness of the GaN buffer layer. This work would be helpful for the growth of high quality DBR structures.

Influence of AlN Buffer Thickness on GaN Grown on Si(111) by Gas Source Molecular Beam Epitaxy with Ammonia

Hexagonal GaN is grown on a Si(111) substrate with AlN as a buffer layer by gas source molecular beam epitaxy (GSMBE) with ammonia. The thickness of AlN buffer is changed from 9 to 72 nm. When the thickness of AlN buffer is 36 nm, the surface morphology and crystal quality of GaN is optimal. The in-situ reflection high energy electron diffraction (RHEED) reveals that the transition to a two-dimensional growth mode of AlN is the key to the quality of GaN. However, the thickness of AlN buffer is not so critical to the residual in-plane tensile stress in GaN grown on Si(111) by GSMBE for AlN thickness between 9 to 72 nm.

Depth distribution of the strain in the GaN layer with low-temperature AlN interlayer on Si(111) substrate studied by Rutherford backscattering/channeling

The depth distribution of the strain-related tetragonal distortion e(T) in the GaN epilayer with low-temperature AlN interlayer (LT-AlN IL) on Si(111) substrate is investigated by Rutherford backscattering and channeling. The samples with the LT-AlN IL of 8 and 16 nm thickness are studied, which are also compared with the sample without the LT-AlN IL. For the sample with 16-nm-thick LT-AlN IL, it is found that there exists a step-down of e(T) of about 0.1% in the strain distribution. Meanwhile, the angular scan around the normal GaN <0001> axis shows a tilt difference about 0.01degrees between the two parts of GaN separated by the LT-AlN IL, which means that these two GaN layers are partially decoupled by the AlN interlayer. However, for the sample with 8-nm-thick LT-AlN IL, neither step-down of e(T) nor the decoupling phenomenon is found. The 0.01degrees decoupled angle in the sample with 16-nm-thick LT-AlN IL confirms the relaxation of the LT-AlN IL. Thus the step-down of e(T) should result from the compressive strain compensation brought by the relaxed AlN interlayer. It is concluded that the strain compensation effect will occur only when the thickness of the LT-AlN IL is beyond a critical thickness. (C) 2004 American Institute of Physics.

Influence of AlN thickness on strain evolution of GaN layer grown on high-temperature AlN interlayer

The strain evolution of a GaN layer grown on a high- temperature AlN interlayer with varying AlN thickness by metalorganic chemical vapour deposition is investigated. In the growth process, the growth strain changes from compression to tension in the top GaN layer, and the thickness at which the compressive- to- tensile strain transition takes place is strongly influenced by the thickness of the AlN interlayer. It is confirmed from the x- ray diffraction results that the AlN interlayer has a remarkable effect on introducing relative compressive strain to the top GaN layer. The strain transition process during the growth of the top GaN layer can be explained by the threading dislocation inclination in the top GaN layer. Adjusting the AlN interlayer thickness could change the density of the threading dislocations in the top GaN layer and then change the stress evolution during the top GaN layer's growth.

In0.25Ga0.75As films growth on the thin GaAs/AlAs buffer layer on the GaAs(001) substrate

Thin GaAs/AlAs and GaAs/GaAs buffer layer structure have been fabricated on the GaAs(001) substrate. The top GaAs buffer layer is decoupled from the host substrate by introduction of a low temperature thin interlayer (AlAs or GaAs), which was mechanically behaved like the compliant substrate. Four hundred nanometer In0.25Ga0.75As films were grown on these substrates and the traditional substrate directly. Photoluminescence (PL), double-crystal X-ray diffraction (DCXRD) and atomic force microscopy (AFM) measurements were used to estimate the quality of the In0.25Ga0.75As layer and the compliant effects of the low temperature buffer layer. All the measurements shown that the qualities of epilayer have been improved and the substrate have been deteriorated severely. The growth technique of the thin GaAs/AlAs structure was found to be simple but very powerful for heteroepitaxy. (C) 2003 Elsevier Science B.V All rights reserved.

Photoluminescence of AlGaAs/InGaAs/GaAs pseudomorphic HEMTs with different thickness of spacer layer

The photoluminescence spectra of the single delta -doped AlGaAs/InGaAs/GaAs pseudomorphic HEMTs with different thickness of spacer layer were studied. There are two peaks in the PL spectra of the structure corresponding to two sub-energy levels of the InGaAs quantum well. It was found that the photoluminescence intensity ratio of the two peaks changes with the spacer thickness of the pseudomorphic HEMTs. The reasons were discussed. The possible use of this phenomenon in optimization of pseudomorphic HEMTs was also proposed. (C) 2001 Elsevier Science B.V. All rights reserved.

Effects of seed layer on the realization of larger self-assembled coherent InAs/GaAs quantum dots

The size and shape evolution of self-assembled InAs quantum dots (QDs) influenced by 2.0 ML InAs seed layer has been systematically investigated for 2.0, 2.5, and 2.9 ML deposition on GaAs(100) substrate. Based on comparisons with the formation of large incoherent InAs islands on single-layer samples at late growth stage, the larger coherent InAs quantum dots at 2.9 ML deposition has been observed on the second InAs layer. A simple model analysis accounting for the surface strain distribution influenced by buried islands gives a stronger increment of critical QD diameter for dislocation nucleation on the second layer in comparison with the single-layer samples. Additionally, the inhibition of dislocation nucleation in InGaAs/GaAs large islands can also be explained by our theoretical results. (C) 2000 American Institute of Physics. [S0021-8979(00)08922-2].