Spatial resolved temperature measurement based on absorption spectroscopy using a single tunable diode laser

A novel method based on wavelength-multiplexed line-of-sight absorption and profile fitting for non-uniform flow field measurement is reported. A wavelength scanning combing laser temperature and current modulation WMS scheme is used to implement the wavelength-multiplexed-profile fitting method. Second harmonic (2f) signal of eight H2O transitions features near 7,170 cm(-1) are measured in one period using a single tunable diode laser. Spatial resolved temperature distribution upon a CH4/air premixed flat flame burner is obtained. The result validates the feasibility of strategy for non-uniform flow field diagnostics by means of WMS-2f TDLAS.

Charge-sensitive deep level transient spectroscopy of helium-ion-irradiated silicon, as-irradiated and after thermal annealing

Electrically active defects in the phosphor-doped single-crystal silicon, induced by helium-ion irradiation under thermal annealing, have been investigated. Isothermal charge-sensitive deep-level transient spectroscopy was employed to study the activation energy and capture cross-section of helium-induced defects in silicon samples. It was shown that the activation energy levels produced by helium-ion irradiation first increased with increasing annealing temperature, with the maximum value of the activation energy occurring at 873K, and reduced with further increase of the annealing temperature. The energy levels of defects in the samples annealed at 873 and 1073K are found to be located near the mid-forbidden energy gap level so that they can act as thermally stable carrier recombination centres.

Raman Spectroscopy of Irradiation Effect in Three Carbon Allotropes Induced by Low Energy B Ions

Irradiation efect in three carbon allotropes C60, diamond and highly oriented pyrolytic graphite (HOPG) induced by 170 keV B ions, mainly including the process of the damage creation, is investigated by means of Raman spectroscopy technique. The diferences on irradiation sensitivity and structural stability for C60, HOPG and diamond are compared. The analysis results indicate that C60 is the most sensitive for B ions irradiation,diamond is the second one and the structure of HOPG is the most stable under B ion irradiation. The damage cross sections ? of C60, diamond and HOPG deduced from the Raman spectra are 7.78×10−15 , 6.38×10−15 and1.31 × 10−15cm2, respectively.

Microelements in Potato and Lily Samples Studied by Laser-Induced Breakdown spectroscopy Technology

A LIBS setup was built in the Institute of Modern Physics. In our experiments, LIBS spectra produced by infrared radiation of Nd : YAG nanosecond laser with 100 and 150 mJ pulse energy, respectively, were measured by fiber optic spectrometer in the ranges of 230-430 run and 430-1080 nm with a delay time of 1.7 and gate width of 2 ms for potato and lily samples prepared by vacuum freeze-dried technique. The lines from different metal elements such as K, Ca, Na, Mg, Fe, Al, Mn and Ti, and nonmetal elements such as C, N, O and H, and some molecular spectra from C-2, CaO, and CN were identified according to their wavelengths. The relative content of the six microelements, Ca, Na, K, Fe, Al, and Mg in the samples were analyzed according to their representative line intensities. By comparison we found that there are higher relative content of Ca and Na in lily samples and higher relative content of Mg in potato samples. The experimental results showed that LIBS technique is a fast and effective means for measuring and comparing the contents of microelements in plant samples.

Raman spectroscopy of apatite irradiated with swift heavy ions with and without simultaneous exertion of high pressure

Durango apatite was irradiated with energetic U ions of 2.64 GeV and Kr ions of 2.1 GeV, with and without simultaneous exposure to a pressure of 10.5 GPa. Analysis by confocal Raman spectroscopy gives evidence of vibrational changes being marginal for fluences below 5x10(11) ions/cm(2) but becoming dominant when increasing the fluence to 8x10(12) ions/cm(2). Samples irradiated with U ions experience severe strain resulting in crystal cracking and finally breakage at high fluences. These radiation effects are directly linked to the formation of amorphous tracks and the fraction of amorphized material increasing with fluence. Raman spectroscopy of pressurized irradiated samples shows small shifts of the band positions with decreasing pressure but without a significant change of the Gruneisen parameter. Compared to irradiations at ambient conditions, the Raman spectra of apatite irradiated at 10.5 GPa exhibit fewer modifications, suggesting a higher radiation stability of the lattice by the pressure applied.

X-ray spectroscopy of hollow argon atoms formed on a beryllium surface

The X-rays induced during interaction of highly charged argon ions with a beryllium surface are reported. It is found that the K shell X-ray yield of single particle during interaction of hydrogen-like argon ions was 3.6 x 10(-3), which is five orders more than that of heliumlike argon ions. Moreover, due to the screening the 2s electron, no K X-ray was emitted during interaction of lithium-like argon ions with the beryllium surface. It is also found that the X-ray spectrum induced by Ar17+ interacting with residual gases is very different from that induced by Ar17+ interacting with the surfaces, that provided an experimental evidence for the existence of the hollow atoms below the surface.

State-selective electron capture for keV He2+ ions on helium collisions studied by recoil momentum spectroscopy

State-selective single electron capture cross sections are measured by recoil ion momentum spectroscopy technique for He2+ on He at 30 keV incident energy. The cross sections for capture into ground and excited states are obtained and compared to classical model calculations as well as to the quantum mechanical calculations. The experimental results are in good agreement with quantum mechanical results.

基于激光诱导击穿光谱技术的铝合金成分定量分析；Quantitative analysis of element concentration in Al alloy by using laser-induced breakdown spectroscopy

利用Nd:YAG激光器输出的532nm激光束对位于空气中的标准变形铝合金样品进行烧蚀产生了激光诱导等离子体.对测量的230—440nm波长范围的光谱进行了谱线标定,同时基于自由定标方法对样品成分进行了定量分析,确定了样品中的元素含量.分析结果与标准值具有较好的一致性.

X-ray photoelectron spectroscopy study on GaN crystal irradiated by slow highly charged ions

We utilize slow highly charged ions of Xeq+ and Pbq+ to irradiate GaN crystal films grown on sapphire substrate, and use X-ray photoelectron spectroscopy to analyze its surface chemical composition and chemical state of the elements. The results show that highly charged ions can etch the sample surface obviously, and the GaN sample irradiated by highly charged ions has N depletion or is Ga rich on its surface. Besides, the relative content of Ga-Ga bond increases as the dose and charge state of the incident ions increase. In addition, the binding energy of Ga 3d(5/2) electrons corresponding to Ga-Ga bond of the irradiated GaN sample is smaller compared with that of the Ga bulk material. This can be attributed to the lattice damage, which shifts the binding energy of inner orbital electrons to the lower end.

低速高电荷态重离子辐照的GaN晶体表面X射线光电子能谱研究；X-ray photoelectron spectroscopy study on GaN crystal irradiated by slow highly charged ions

利用低速高电荷态Xeq+和Pbq+离子对在蓝宝石衬底上生长的GaN晶体膜样品进行辐照,并利用X射线光电子能谱(XPS)对样品表面化学组成和元素化合态进行了分析.结果表明,高电荷态离子对样品表面有显著的刻蚀作用;经高电荷态离子辐照的GaN样品表面氮元素贫乏而镓元素富集;随着入射离子剂量和所携带电荷数的增大,Ga—Ga键相对含量增大;辐照后,GaN样品中Ga—Ga键对应的Ga3d5/2电子的束缚能偏小,晶格损伤使内层轨道电子束缚能向低端方向偏移.