CRYSTALLINITY OF UNIFORM OLIGO(OXYETHYLENE) MONO-N-ALKYL ETHERS STUDIED BY X-RAY-DIFFRACTION AND DIFFERENTIAL SCANNING CALORIMETRY

The crystallinity of two series of uniform oligo(oxyethylene) mono-n-alkyl ethers has been investigated: alpha-alkyl,omega-hydroxyoligo(oxyethylene)s, H(CH2)n(OCH2CH2)mOH, and alpha-alkyl,omega-methoxyoligo(oxyethylene)s, H(CH2)n(OCH2CH2)mOCH3. The hydroxy-ended oligomers formed bilayer crystals, and the methoxy-ended oligomers formed monolayer crystals. The helical oxyethylene blocks were oriented normal to the layer-crystal end-group plane, whilst the trans-planar alkyl blocks were generally tilted at an angle delta = 60-degrees. The melting temperature and enthalpy of fusion were higher for hydroxy-ended oligomers than for corresponding methoxy-ended oligomers.

Angular distribution and conversion of multi-keV L-shell X-ray sources produced from nanosecond laser irradiated thick-foil targets

An experimental study on the angular distribution and conversion of multi-keV X-ray sources produced from 2 ns-duration 527nm laser irradiated thick-foil targets on Shenguang II laser facility (SG-II) is reported. The angular distributions measured in front of the targets can be fitted with the function of f(theta) = alpha+ (1- alpha)cos(beta) theta (theta is the viewing angle relative to the target normal), where alpha = 0.41 +/- 0.014, beta = 0.77 +/- 0.04 for Ti K-shell X-ray Sources (similar to 4.75 keV for Ti K-shell), and alpha = 0.085 +/- 0.06, beta = 0.59 +/- 0.07 for Ag/Pd/Mo L-shell X-ray Sources (2-2.8 keV for Mo L-shell, 2.8-3.5 keV for Pd L-shell, and 3-3.8 keV for Ag L-shell). The isotropy of the angular-distribution of L-shell emission is worse than that of the K-shell emission at larger viewing angle (>70 degrees), due to its larger optical depth (stronger self-absorption) in the cold plasma side lobe Surrounding the central emission region, and in the central hot plasma region (emission region). There is no observable difference in the angular distributions of the L-shell X-ray emission among Ag, Pd, and Mo. The conversion efficiency of Ag/Pd/Mo L-shell X-ray sources is higher than that of the Ti K-shell X-ray sources, but the gain relative to the K-shell emission is not as high as that by using short pulse lasers. The conversion efficiency of the L-shell X-ray sources decrease, with increasing atomic numbers (or X-ray photon energy), similar to the behavior of the K-shell X-ray Source.

Radiation damping effects on the ultrashort x-ray pulses generated by nonlinear Thomson backscattering

Nonlinear Thomson backscattering of an intense Gaussian laser pulse by a counterpropagating energetic electron is investigated by numerically solving the electron equation of motion taking into account the radiative damping force. The backscattered radiation characteristics are different for linearly and circularly polarized lasers because of a difference in their ponderomotive forces acting on the electron. The radiative electron energy loss weakens the backscattered power, breaks the symmetry of the backscattered-pulse profile, and prolongs the duration of the backscattered radiation. With the circularly polarized laser, an adjustable double-peaked backscattered pulse can be obtained. Such a profile has potential applications as a subfemtosecond x-ray pump and probe with adjustable time delay and power ratio. (c) 2006 American Institute of Physics.

Investigation of GaSb epilayer grown on vicinal GaAs(001) substrate by high resolution x-ray diffraction

GaSb epilayers grown on GaAs(001) vicinal substrate misoriented towards (111) plane were studied using high-resolution x-ray diffraction (HRXRD). The results show that GaSb epilayers exhibit positive crystallographic tilt and the distribution of 60 degrees misfit dislocations (MDs) is imbalanced. The vicinal substrate also leads to the anisotropy of the mosaic structure, i.e. the lateral coherent lengths in [1 (1) over bar0] directions are larger than those in [110] directions. Furthermore, the full-width at half maximum (FWHM) of the off-axis peaks varies with the inclination angle, which is a result of different dislocation densities in the {111} glide planes.

Determination of the tilt and twist angles of curved GaN layers by high-resolution x-ray diffraction

The full-width at half-maximum (FWHM) of an x-ray rocking curve (XRC) has been used as a parameter to determine the tilt and twist angles of GaN layers. Nevertheless, when the thickness of GaN epilayer reaches several microns, the peak broadening due to curvature becomes non-negligible. In this paper, using the (0 0 l), l = 2, 4, 6, XRC to minimize the effects of wafer curvature was studied systematically. Also the method to determine the tilt angle of a curved GaN layer was proposed while the Williamson-Hall plot was unsuitable. It was found that the (0 0 6) XRC-FWHM had a significant advantage for high-quality GaN layers with the radius curvature of r less than 3.5 m. Furthermore, an extrapolating method of gaining a reliable tilt angle has also been proposed, with which the calculated error can be improved by 10% for r < 2 m crystals compared with the (0 0 6) XRC-FWHM. In skew geometry, we have demonstrated that the twist angles deriving from the (2 0 4) XRC-FWHM are in accord with those from the grazing incidence in-plane diffraction (IP-GID) method for significantly curved samples.

Comparison between double crystals X-ray diffraction micro-Raman measurement on composition determination of high Ge content Si1_xGex layer epitaxied on Si substrate

It is important to acquire the composition of Si1-xGex layer, especially that with high Ge content, epitaxied on Si substrate. Two nondestructive examination methods, double crystals X-ray diffraction (DCXRD) and micro-Raman measurement, were introduced comparatively to determine x value in Si1-xGex: layer, which show that while the two methods are consistent with each other when x is low, the results obtained from double crystals X-ray diffraction are not credible due to the large strain relaxation occurring in Si1-xGex layers when Ge content is higher than about 20%. Micro-Raman measurement is more appropriate for determining high Ge content than DCXRD.

High-resolution X-ray diffraction analysis of the Bragg peak integrated intensity in highly mismatched III-N epilayers

A new method of measuring the thickness of GaN epilayers on sapphire (0 0 0 1) substrates by using double crystal X-ray diffraction was proposed. The ratio of the integrated intensity between the GaN epilayer and the sapphire substrate showed a linear relationship with the GaN epilayer thickness up to 2.12 mum. It is practical and convenient to measure the GaN epilayer thickness using this ratio, and can mostly eliminate the effect of the reabsorption, the extinction and other scattering factors of the GaN epilayers. (C) 2003 Elsevier Science B.V. All rights reserved.

Design, simulation and testing of large area silicon drift detectors and detector array for X-ray spectroscopy

Large area (25 mm(2)) silicon drift detectors and detector arrays (5x5) have been designed, simulated, and fabricated for X-ray spectroscopy. On the anode side, the hexagonal drift detector was designed with self-biasing spiral cathode rings (p(+)) of fixed resistance between rings and with a grounded guard anode to separate surface current from the anode current. Two designs have been used for the P-side: symmetric self-biasing spiral cathode rings (p(+)) and a uniform backside p(+) implant. Only 3 to 5 electrodes are needed to bias the detector plus an anode for signal collection. With graded electrical potential, a sub-nanoamper anode current, and a very small anode capacitance, an initial FWHM of 1.3 keV, without optimization of all parameters, has been obtained for 5.9 keV Fe-55 X-ray at RT using a uniform backside detector.

INVESTIGATION OF GAAS/SI MATERIAL BY X-RAY DOUBLE-CRYSTAL DIFFRACTION

GaAs epilayer films on Si substrates grown by molecular-beam epitaxy were investigated by the x-ray double-crystal diffraction method. The rocking curves were recorded for different diffraction vectors of samples. The results show that the unit-cell volumes of GaAs epilayers are smaller than that of the GaAs bulk material. The strained-layer superlattice buffer layer can improve the quality of the film, especially in the surface lamella. The parameter W' = W(expt)/(square-root \gamma-h\/gamma-0/sin 2-theta-B) is introduced to describe the quality of different depths of epilayers. As the x-ray incident angle is increased, W' also increases, that is, the quality of the film deteriorates with increasing penetration distance of the x-ray beam. Therefore, W' can be considered as a parameter that describes the degree of perfection of the epilayer along the depth below the surface. The cross-section transmission electron microscopy observations agree with the results of x-ray double-crystal diffraction.

X-ray diffraction study of GaAs/InAs/GaAs ultrathin single quantum well

Ultrathin single quantum well (about one monolayer) grown on GaAs(001) substrate with GaAs cap layer has been studied by high resolution x-ray diffractometer on a beamline of the Beijing Synchrotron Radiation Facility. The interference fringes on both sides of the GaAs(004) Bragg peak are asymmetric and a range of weak fringes in the higher angle side of the Bragg peak is observed. The simulated results by using the kinematical diffraction method shows that the weak fringe range appears in the higher angle side when the phase shift introduced by the single quantum well is very slightly smaller than m pi (m:integer), and vice versa. After introducing a reasonable model of single quantum well, the simulated pattern is in good agreement with the experiment. (C) 1996 American Institute of Physics.

Design, simulation and testing of large area silicon drift detectors and detector array for X-ray spectroscopy

Large area (25 mm(2)) silicon drift detectors and detector arrays (5x5) have been designed, simulated, and fabricated for X-ray spectroscopy. On the anode side, the hexagonal drift detector was designed with self-biasing spiral cathode rings (p(+)) of fixed resistance between rings and with a grounded guard anode to separate surface current from the anode current. Two designs have been used for the P-side: symmetric self-biasing spiral cathode rings (p(+)) and a uniform backside p(+) implant. Only 3 to 5 electrodes are needed to bias the detector plus an anode for signal collection. With graded electrical potential, a sub-nanoamper anode current, and a very small anode capacitance, an initial FWHM of 1.3 keV, without optimization of all parameters, has been obtained for 5.9 keV Fe-55 X-ray at RT using a uniform backside detector.

Measurement of the inelastic branch of the stellar O-14(alpha,p)F-17 reaction occurring in the explosive burning in Novae and X-ray busters

The inelastic component of the key astrophysical resonance (1(-), E-x=6.15 MeV) in the O-14(alpha,p)F-17 reaction has been studied by using the resonant scattering of F-17+p. The experiment was done at REX-ISOLDE CERN with the Miniball setup. The thick target method in inverse kinematics was utilized in the present experiment where a 44.2 MeV F-17 beam bombarded a similar to 40 mu m thick (CH2)(n) target. The inelastic scattering protons in coincidence with the de-excited 495 keV gamma rays have been clearly seen and they are from the inelastic branch to the first excited state in F-17 following decay of the 1(-) resonance in Ne-18. Some preliminary results are reported.

Confined intra-molecular clustering in orientated polyethylene after annealing

Deuterated polyethylene tracer molecules with small amount of branches (12 C2H5- branches per 1000 backbone carbon atoms) were blended with a hydrogenated polyethylene matrix to form a homogenous mixture. The conformational evolution of the deuterated chains in a stretched semi-cry stall me film was observed via online small angle neutron scattering measurements during annealing at high temperatures close to the melting point. Because the sample was annealed at a temperature closely below its melting point, the crystalline lamellae were only partially molten and the system could not fully relax. The global chain dimensions were preserved during annealing. Recrystallization of released polymeric chain segments allows for local phase separation thus driving the deuterated chain segments into the confining interlamellar amorphous layers giving rise to an interesting intra-molecular clustering effect of the long deuterated chain. This clustering is deduced from characteristic small angle neutron scattering patterns. The confined phase separation has its origin in primarily the small amount of the branches on the deuterated polymers which impede the crystallization of the deuterated chain segments.

Shear-enhanced crystallization of a thermoplastic polyimide derived from 3,3 ',4,4 '-oxydiphthalic dianhydride and 4,4 '-oxydianiline

The aim of this work is to investigate the effect of consecutive shear on the crystallization of an amorphous aromatic polyimide (PI) derived from 3,3',4,4'oxydiphthalic dianhydride (3,3',4,4'-ODPA) and 4,4-oxydianiline (ODA). At 260 degrees C, the increase of shear rate or shear time leads to the increase of crystallinity. Indeed, increasing shear rate can also accelerate the crystallization behavior. Moreover, it was found that a new melting peak appeared at higher temperature for long time or high rate sheared sample. The enhancement of crystallization behavior appears directly linked to the increase of crystal thickness. Particularly, the effect of shear temperature was investigated, and the results revealed that the crystallization of the PI was more sensitive to shear at 260 degrees C, which was 10 degrees above the glass transition temperature (250 degrees C) of the PI. Possible mechanism was proposed to illustrate the effect of consecutive shear on the crystallization of the PI polymer.

Effect of annealing on the viscoelastic and viscoplastic responses of low-density polyethylene

Two series of tensile tests with constant crosshead speeds (ranging from 5 to 200 mm/min) and tensile relaxation tests (at strains from 0.03 to 0.09) were performed on low-density polyethylene in the subyield region of deformations at room temperature. Mechanical tests were carried out on nonannealed specimens and on samples annealed for 24 h at the temperatures T = 50, 60, 70, 80, and 100 degreesC. Constitutive equations were derived for the time-dependent response of semicrystalline polymers at isothermal deformations with small strains. A polymer is treated as an equivalent heterogeneous network of chains bridged by temporary junctions (entanglements, physical crosslinks, and lamellar blocks). The network is thought of as an ensemble of mesoregions linked with each other. The viscoelastic behavior of a polymer is modeled as a thermally induced rearrangement of strands (separation of active strands from temporary junctions and merging of dangling strands with the network). The viscoplastic response reflects sliding of junctions in the network with respect to their reference positions driven by macrostrains. Stress-strain relations involve five material constants that were found by fitting the observations.