黄土丘陵区植被次生演替灌木初期的土壤养分特征

对黄土丘陵区植被次生演替灌木初期的土壤养分特征进行了研究。结果表明:灌木初期土壤养分含量总体上表现出0~20 cm土层明显高于20~60 cm土层,而20~40 cm和40~60 cm间无显著差异。0~60 cm土壤深度内,土壤养分因子含量平均值变化范围分别为:有机质4.66~9.83 g.kg-1,全氮0.33~0.61 g.kg-1,全磷0.49~0.52 g.kg-1,有效氮21.56~41.80 mg.kg-1,有效磷0.73~1.31 mg.kg-1,有效钾58.31~102.01 mg.kg-1。灌木初期的土壤养分条件略好于草本阶段,说明植被演替草本阶段对土壤的培肥作用为群落向灌丛演替阶段发展提供了一个较好的土壤养分环境。灌木初期不同,灌木树种间的土壤养分条件存在一定差异,表明不同灌木树种定居所需适宜的土壤养分条件也不同;灌木初期除土壤全磷外,其他各养分因子间均表现出极显著线性相关关系(P<0.01)。

黄土丘陵沟壑区退耕地土壤种子库对植被恢复的影响

为了探讨土壤种子库对植被恢复的影响,该文在野外调查和室内试验的基础上,采用典范变量分析,研究了黄土丘陵沟壑区退耕地土壤种子库密度、土壤水分和养分、地形因子以及退耕年限对植物群落变化的影响,量化了土壤种子库对植被恢复的贡献。结果表明:影响植物群落变化的因子有土壤水分、速效磷、土壤种子库和坡向;仅用土壤种子库只可解释植物群落变化的32.1%;由于退耕地土壤种子库的优势种主要为猪毛蒿,其植被恢复潜力与速度比较小。黄土丘陵沟壑区退耕地植被恢复需要适度的人为干预,有必要适当引进一些演替后期物种,如白羊草、铁杆蒿、长芒草等物种,以缩短演替时间,加速退耕地植被恢复进程,促进黄土丘陵沟壑区水土流失的防治。

EFFECT OF TOTAL HYDROGEN CONTENT IN SILICON-NITRIDE SENSITIVE FILM ON PERFORMANCE OF ISFET

Quantitative determinations of the hydrogen content and its profile in silicon nitride sensitive films by the method of resonant nuclear reaction have been carried out. At a deposition temperature of 825-degrees-C, hydrogen exists in an LPCVD silicon nitride sensitive film and the hydrogen content on its surface is in the range (8-16) x 10(21) cm-3, depending on the different deposition processes used. This hydrogen content is larger than the (2-3) x 10(21) cm-3 in its interior part, which is homogeneous. Meanwhile, we observe separate peaks for the chemical bonding configurations of Si-H and N-H bonds, indicated by the infrared absorption bands Si-O (1106 cm-1), N-H (1200 cm-1), Si-H-3 (2258 cm-1) and N-H-2 (3349 cm-1), respectively. The worse linear range of the ISFET is caused by the presence of oxygen on the surface of the silicon nitride sensitive film. The existence of chemical bonding configurations of Si-H, N-H and N-Si on its surfaces is favourable for its pH response.

RF-MBE Grown AlGaN/GaN HEMT Structure with High Al Content

A Si doped AlGaN/GaN HEMT structure with high Al content (x= 44%) in the barrier layer is grown on sapphire substrate by RF-MBE. The structural and electrical properties of the heterostructure are investigated by the triple axis X-ray diffraction and Van der Pauw-Hall measurement, respectively. The observed prominent Bragg peaks of the GaN and AlGaN and the Hall results show that the structure is of high quality with smooth interface.fabricated and characterized. Better DC characteristics, maximum drain current of 1.0A/mm and extrinsic transconductance of 218mS/mm are obtained when compared with HEMTs fabricated using structures with lower Al mole fraction in the AlGaN barrier layer. The results suggest that the high Al content in the AlGaN barrier layer is promising in improving material electrical properties and device performance.

The influence of oxygen content on photoluminescence from Er-doped SiOx

SiOx films with oxygen concentrations ranging 13-46 at.% were deposited by plasma enhanced chemical vapor deposition (PECVD) technique using: pure SiH4 and N2O mixture. Erbium was then implanted at an energy of 500 KeV with dose of 2x10(15) ions/cm(2). The samples were subsequently annealed in N-2 for 20 sec at temperatures of (300-950 degrees C). Room temperature (RT) photo-luminescence (PL) data were collected by Fourier Transform Infrared Spectroscopy (FTIS) with an argon laser at a wavelength of 514.5 nm and an output power from 5 to 2500 mw. The intense room-temperature luminescence was observed around 1.54 mu m. The luminescence intensity increases by 2 orders of magnitude as compared with that of Er-doped Czochralski (CZ) Si. We found that the Er3+ luminescence depends strongly on the SiOx microstructure. Our experiment also showed that the silicon grain radius decreased with increasing oxygen content and finally formed micro-crystalline silicon or nano-crystalline silicon. As a result, these silicon small particles could facilitate the energy transfer to Er3+ and thus enhanced the photoluminescence intensity.

The content calculation of hexagonal phase inclusions in cubic GaN films on GaAs(001) substrates grown by metalorganic chemical vapor deposition

Cubic GaN(c-GaN) films are grown on GaAs(001) substrates by metalorganic chemical vapor deposition (MOCVD). Two GaN samples were grown with different buffer layer, the deposition time of each was 1 and 3 min, respectively. 4-circle X-ray double crystal diffraction (XRDCD) was used to study the secondary crystallographic phases presented in the c-GaN films. The phase composition of the epilayers was determined by X-ray reciprocal space mapping. The intensities of the c-GaN(002) and h-GaN(10 (1) over bar 1) planes detected in the mapping were investigated by omega scans. The content of the hexagonal phase inclusions in the c-GaN films was calculated to about 1.6 and 7.9%, respectively. The thicker buffer layer is not preferable for growing high quality pure c-GaN films. (C) 2000 Elsevier Science S.A. All rights reserved.