CA-100萃取稀土及二价金属的热力学和动力学研究

该文系统研究了一种新型有机羧酸类萃取剂仲壬基苯氧基乙酸(CA-100)对稀土及其杂质的萃取热力学和动力学规律,并通过协同萃取、双溶剂萃取、加入络合剂等手段对CA-100萃取体系进行改善,为该萃取剂在工业上的应用打下基础,具体的研究内容如下:1.研究了CA-100对于稀土及Zn,Cd,Cu,Co,Ni,Mn,Mg等金属元素的萃取热力学规律,计算了金属间分离系数,获得了萃取平衡方程式,考察了反萃性能及稀释剂和甲庚醇的加入对萃取的影响.研究发现该萃取剂可用于Sc同其它稀土的分离及某些金属对的分离,在很多方面优于环烷酸体系.2.探讨了CA-100与—盐基磷(膦)酸类萃取剂对锌和镉的协同萃取,研究了协同萃取机理,确定了协萃配合物的组成.3.研究了在络合试剂的存在下CA-100萃取重稀土的行为及Y同重稀土的分离情况.4.用恒流层界面池研究了CA-100萃取Y,Yb,La的萃取动力学,考察了各因素对萃取速率的影响,获得了萃取速率方程,探讨了动力学机理.5.探讨了各种因素对CA-100界面活性的影响.6.在上述热力学和动力学研究基础上,进行了CA-100从混合稀土溶液中富集和纯化Sc的工艺模拟实验.

华南沿海近100年来2月份的极端气温事件

采用IPCC AR4规定的极端天气事件划分标准，分析1908—2008年广州、香港、

INVESTIGATION OF THE GROWN DIAMOND (100) SURFACE USING HIGH-RESOLUTION ELECTRON-ENERGY LOSS SPECTROSCOPY

The diamond (100) facets deposited at initial 1.0% CH4 have been investigated using high resolution electron energy loss spectroscopy (HREELS). The diamond (100) facets grown at 800-degrees-C are terminated by CH2 radicals, and there is no detectable frequency shift compared with the characteristic frequencies of molecular subgroup CH2. Beside the CH2 vibration loss, CH bend loss (at 140 meV) of locally monohydrogenated dimer is detected for the diamond (100) facets grown at 1000-degrees-C. Dosing the (100) facets grown at 800-degrees-C with atomic hydrogen at 1*10(-6) mbar, the loss peak at 140 meV appears. It is suggested that there are enough separately vacant sites and uniformly dispersed monohydrogenated dimers on (100) facets. This structure relaxes the steric repulsion between the adjacent hydrogen atoms during the diamond (100) surface growth.

ELECTRONIC SPECTROSCOPY STUDIES OF A P2S5NH4OH TREATED GAS(100) SURFACE

Microscopic characteristics of the GaAs(100) surface treated with P2S5/NH4OH solution has been investigated by using Auger-electron spectroscopy (AES) and x-ray photoemission spectroscopy (XPS). AES reveals that only phosphorus and sulfur, but not oxygen, are contained in the interface between passivation film and GaAs substrate. Using XPS it is found that both Ga2O3 and As2O3 are removed from the GaAs surface by the P2S5/NH4OH treatment; instead, gallium sulfide and arsenic sulfide are formed. The passivation film results in a reduction of the density of states of the surface electrons and an improvement of the electronic and optical properties of the GaAs surface.

CONSTRUCTION AND APPLICATIONS OF A DUAL MASS-SELECTED LOW-ENERGY ION-BEAM SYSTEM

A direct ion beam deposition system designed for heteroepitaxy at a low substrate temperature and for the growth of metastable compounds has been constructed and tested. The system consists of two mass-resolved low-energy ion beams which merge at the target with an incident energy range 50-25 000 eV. Each ion beam uses a Freeman ion source for ion production and a magnetic sector for mass filtering. While a magnetic quadrupole lens is used in one beam for ion optics, an electrostatic quadrupole lens focuses the other beam. Both focusing approaches provide a current density more than 100-mu-A/cm2, although the magnetic quadrupole gives a better performance for ion energies below 200 eV. The typical current of each beam reaches more than 0.3 mA at 100 eV, with a ribbon beam of about 0.3-0.5 x 2 cm2. The target is housed in an ultrahigh vacuum chamber with a base pressure of 1 x 10(-7) Pa and a typical pressure of 5 x 10(-6) Pa when a noncondensable beam like argon is brought into the chamber. During deposition, the target can be heated to 800-degrees-C and scanned mechanically with an electronic scanning control unit. The dual beam system has been used to grow GaN using a Ga+ and a N+ beam, and to study the oxygen and hydrogen ion beam bombardment effects during carbon ion beam deposition. The results showed that the simultaneous arrival of two beams at the target is particularly useful in compound formation and in elucidation of growth mechanisms.