Determination of urinary nucleosides by direct injection and coupled-column high-performance liquid chromatography

A coupled-column liquid chromatographic method for the direct analysis of 14 urinary nucleosides is described. Efficient on-line clean-up and concentration of 14 nucleosides from urine samples were obtained by using a boronic acid-substituted silica column (40 turn x 4.0 mm I.D.) as the first column (Col-1) and a Hypersil ODS2 column (250 mm x 4.6 mm I.D.) as the second column (Col-2). The mobile phases applied consisted of 0.25 mol/L ammonium acetate (pH 8.5) on Col-1, and of 25 mmol/L potassium dihydrogen phosphate (pH 4.5) on Col-2, respectively. Determination of urinary nucleosides was performed on Col-2 column by using a linear gradient elution comprising 25 mmol/L potassium dihydrogen phosphate (pH 4.5) and methanol-water (60:40, v/v) with UV detection at 260 nm. Urinary nucleosides analysis can be carried out by this procedure in 50 min requiring only pH adjustment and the protein precipitation by centrifugation of urine samples. Calibration plots of 14 standard nucleosides showed excellent linearity (r > 0.995) and the limits of detection were at micromolar levels. Both of intra- and inter-day precisions of the method were better than 6.6% for direct determination of 14 nucleosides. The validated method was applied to quantify 14 nucleosides in 20 normal urines to establish reference ranges. (c) 2005 Elsevier B.V. All rights reserved.

High-performance liquid chromatography-tandem mass spectrometry for identification of isoflavones and description of the biotransformation of kudzu root

High-performance liquid chromatography-tandem mass spectrometry has been used to identify isoflavone aglycones and glycosides in kudzu root. Fourteen isoflavones were detected. Among these, six were identified by comparison with authentic standards. Tentative identifications of the other isoflavones are based on UV spectra, mass spectra of protonated and deprotonated molecules, and MS-MS data. Several are reported for the first time in kudzu root. The bioactivity and bioavailability of isoflavone aglycones are usually greater than those of their glycosides. To improve the bioavailability of kudzu root isoflavones, crude beta-glycosidases prepared from microbes were used to hydrolyze the isoflavone glycosides. Several MS modes are combined not only to identify the isoflavones in kudzu root, but also to describe the biotransformation of kudzu root isoflavone glycosides. It is also proved that crude beta-glycosidases have high selectivity toward the O-glycosides of isoflavones.

A novel disintegrin, jerdonatin, inhibits platelet aggregation and sperm-egg binding

A novel disintegrin, jerdonatin, was purified to homogeneity from Trimeresurus jerdonii venom by gel filtration and reversed-phase high-pressure liquid chromatography. We isolated the cDNA encoding jerdonatin from the snake venom gland. Jerdonatin cDNA precursor,;encoded pre-peptide, metalloprotease and disintegrin domain. Jerdonatin is composed of 72 amino acid residues including 12 cysteines and the tripeptide sequence Arg-Gly-Asp (RGD), a well-known characteristic of the disintegrin family. Molecular mass of jerdonatin was determined to be 8011 Da by matrix-assisted laser desorption ionization time of flight mass spectrometry (MALDI-TOF-MS). Jerdonatin inhibited ADP- and collagen-induced human platelet aggregation with IC50 of 123 and 135 nM, respectively. We also investigated the effect of jerdonatin on the binding of B6D2F1 hybrid mice spermatozoa to mice zona-free eggs and their subsequent fusion. Jerdonatin significantly inhibited sperm-egg binding in a concentration-dependent manner, but had no effect on the fusion of sperm-egg. These results indicate that integrins on the egg play a role in mammalian fertilization. (C) 2004 Elsevier Inc. All rights reserved.

Purification, cloning and biological characterization of a novel disintegrin from Trimeresurus jerdonii venom

A novel disintegrin, jerdonin, was purified from the Trimeresurus jerdonii venom by means of gel filtration and reverse phase high pressure liquid chromatography. Its coding cDNA was also isolated from the venom gland. The jerdonin coding cDNA is part of

Replacement of methane from quartz sand-bearing hydrate with carbon dioxide-in-water emulsion

The replacement of CH4 from its hydrate in quartz sand with 90:10, 70:30, and 50:50 (W-CO2:W-H2O) carbon dioxide-in-water (C/W) emulsions and liquid CO2 has been performed in a cell with size of empty set 36 x 200 mm. The above emulsions were formed in a new emulsifier, in which the temperature and pressure were 285.2 K and 30 MPa, respectively, and the emulsions were stable for 7-12 h. The results of replacing showed that 13.1-27.1%, 14.1-25.5%, and 14.6-24.3% of CH4 had been displaced from its hydrate with the above emulsions after 24-96 It of replacement, corresponding to about 1.5 times the CH4 replaced with high-pressure liquid CO2. The results also showed that the replacement rate of CH4 with the above emulsions and liquid CO2 decreased from 0.543, 0.587, 0.608, and 0.348 1/h to 0.083, 0.077, 0.069, and 0.063 1/h with the replacement time increased from 24 to 96 h. It has been indicated by this study that the use of CO2 emulsions is advantageous compared to the use of liquid CO2 in replacing CH4 from its hydrate.

Flow Characteristics of Liquid with Pressure-Dependent Viscosities in Microtubes

It is obvious that the pressure gradient alone, the axial direction in a pipe flow keeps constant according to the Haoen-Poiseuille equation. However, recent experiments indicated that the distribution of the pressure seemed no longer linear for liquid flows in microtubes driven by high pressure (1-30MPa). Based on H-P equation with slip boundary condition and Bridgman's relation of viscosity vs. static pressure, the nonlinear distribution of pressure along the axial direction is analyzed in this paper. The revised standard Poiseuille number with the effect of pressure-dependent viscosity taken into account agrees well with the experimental results. Therefore, the dependence of the viscosity on the pressure is one of the dominating, factors under high driven pressure, and is represented by an important property coefficient et of the liquid.

Very low-pressure VLP-CVD growth of high quality gamma-Al2O3 films on silicon by multi-step process

gamma-Al2O3 films were grown on Si (10 0) substrates using the sources of TMA (AI(CH3)(3)) and O-2 by very low-pressure chemical vapor deposition. The effects of temperature control on the crystalline quality, surface morphology, uniformity and dielectricity were investigated. It has been found that the,gamma-Al2O3 film prepared at a temperature of 1000degreesC has a good crystalline quality, but the surface morphology, uniformity and dielectricity were poor due to the etching reaction between 0, and Si substrate in the initial growth stage. However, under a temperature-varied multi-step process the properties Of gamma-Al2O3 film were improved. The films have a mirror-like surface and the dielectricity was superior to that grown under a single-step process. The uniformity of gamma-Al2O3 films for 2-in epi-wafer was <5%, it is better than that disclosed elsewhere. In order to improve the crystalline quality, the gamma-Al2O3 films were annealed for I h in O-2 atmosphere. (C) 2002 Elsevier Science B.V. All rights reserved.

Gallium diffusion through cubic GaN films grown on GaAs(100) at high-temperature using low-pressure MOVPE

Cubic GaN films were grown on GaAs(1 0 0) substrates by low-pressure metalorganic vapor-phase epitaxy at high temperature. We have found a nonlinear relation between GaN film thickness and growth timer and this nonlinearity becomes more obvious with increasing growth temperature. We assumed it was because of Ga diffusion through the GaN film, and developed a model which agrees well with the experimental results. These results raise questions concerning the role of Ga diffusion through the GaN film, which may affect the electrical and optical properties of the material. (C) 1998 Published by Elsevier Science B.V. All rights reserved.

Direct characterization of bitter acids in a crude hop extract by liquid chromatography-atmospheric pressure chemical ionization mass spectrometry

The applicability of on-line coupling of reversed-phase high-performance liquid chromatography to atmospheric pressure ionization tandem mass spectrometry for the separation and characterization of hop acids mixture from the crude extract of Humulus lupulus was investigated. The solvent system consisting of acetonitrile-aqueous formic acid was used to give proper separation of the six main hop bitter acids within 30 min. Further structural information about the components was acquired by collision-induced dissociation (CID). On the basis of analyses of the fragmentation patterns of the major alpha- and beta-bitter acids respectively, identification of the minor ones was performed using selected reaction monitoring (SRM) with a group of qualitatively relevant selected precursor-product ion transitions for each bitter acid in a single high performance liquid chromatography (HPLC) run. Using this technique, six minor hop acids, including "adprelupulone" observed for the first time in natural resources, were detected along with the six major acids. This hyphenated techniques provides potency for rapid qualitative determination of analogs and homologs in mixtures. (C) 2004 American Society for Mass Spectrometry.

Investigation on mechanism of critical cavitating flow in liquid jet pumps under operating limits

The critical cavitating flow in liquid jet pumps under operating limits is investigated in this paper. Measurements on the axial pressure distribution along the wall of jet pumps indicate that two-phase critical flow occurs in the throat pipe under operating limits. The entrained flow rate and the distribution of the wall pressure upstream lowest pressure section does not change when the outlet pressure is lower than a critical value. A liquid-vapor mixing shockwave is also observed under operating limits. The wave front moves back and forth in low frequency around the position of the lowest pressure. With the measured axial wall pressures, the Mach number of the two-phase cavitating flow is calculated. It's found that the maximum Mach number is very close to I under operating limits. Further analysis infers a cross-section where Mach number approaches to I near the wave front. Thus, the liquid-vapor mixture velocity should reach the local sound velocity and resulting in the occurrence of operating limits.

Influence of growth pressure of a GaN buffer layer on the properties of MOCVD GaN

The influence of growth pressure of GaN buffer layer on the properties of MOCVD GaN on alpha-Al2O3 has been investigated with the aid of a home-made in situ laser reflectometry measurement system. The results obtained with in situ measurements and scanning electron microscope show that with the increase in deposition pressure of buffer layer, the nuclei increase in size, which roughens the surface, and delays the coalescence of GaN nuclei. The optical and crystalline quality of GaN epilayer was improved when buffer layer was deposited at high pressure.

Effects of reactor pressure on GaN nucleation layers and subsequent GaN epilayers grown on sapphire substrate

The influence of reactor pressure on GaN nucleation layer (NL) and the quality of subsequent GaN on sapphire is studied. The layers were grown by low-pressure metalorganic chemical vapor deposition (MOCVD) on c-plane sapphire substrates and investigated by in situ laser reflectometry, atomic force microscope, scanning electron microscope, X-ray diffraction and photoluminescence. With the increase of reactor pressure prior to high-temperature GaN growth, the size of GaN nuclei formed after annealing decreases, the spacing between nucleation sites increases and the coalescence of GaN nuclei is deferred. The optical and crystalline qualities of GaN epilayer were improved when NLs were deposited at high pressure. The elongated lateral overgrowth of GaN islands is responsible for the quality improvement. (C) 2003 Elsevier Science B.V. All rights reserved.

Stress and resistivity controls on in situ boron doped LPCVD polysilicon films for high-Q MEMS applications

The simultaneous control of residual stress and resistivity of polysilicon thin films by adjusting the deposition parameters and annealing conditions is studied. In situ boron doped polysilicon thin films deposited at 520 ℃ by low pressure chemical vapor deposition (LPCVD) are amorphous with relatively large compressive residual stress and high resistivity. Annealing the amorphous films in a temperature range of 600-800 ℃ gives polysilicon films nearly zero-stress and relatively low resistivity. The low residual stress and low resistivity make the polysilicon films attractive for potential applications in micro-electro-mechanical-systems (MEMS) devices, especially in high resonance frequency (high-f) and high quality factor (high-Q MEMS resonators. In addition, polysilicon thin films deposited at 570 ℃ and those without the post annealing process have low resistivities of 2-5 mΩ·cm. These reported approaches avoid the high temperature annealing process (> 1000℃), and the promising properties of these films make them suitable for high-Q and high-f MEMS devices.

High Temperature Characteristics of 3C-SiC/Si Heterojunction Diodes Grown by LPCVD

The high temperature (300～480K) characteristics of the n-3C-SiC/p-Si heterojunction diodes (HJD) fabricated by low-pressure chemical vapor deposition on Si (100) substrates are investigated.The obtained diode with best rectifying properties has 1.8×104 of ratio at room temperature,and slightly rectifying characteristics with 3.1 of rectification ratio is measured at 480K of an ambient temperature .220V of reverse breakdown voltage is acquired at 300K.Capacitance-voltage characteristics show that the abrupt junction model is applicable to the SiC/Si HJD structure and the built-in voltage is 0.75V.An ingenious equation is employed to perfectly simulate and explain the forward current density-voltage data measured at various temperatures.The 3C-SiC/Si HJD represents a promising approach for the fabrication of high quality heterojunction devices such as SiC-emitter heterojunction bipolar transistors.