A new Yb-doped oxyorthosilicate laser crystal: Yb : Gd2SiO5

A new Yb-doped oxyorthosilicate laser crystal, Yb:Gd2SiO5 (Yb:GSO), has been grown by the Czochralski (Cz) method. The crystal structure was determined by means of X-ray diffraction analysis. Room temperature absorption and fluorescence spectra of Yb3+ ions in GSO crystal were measured. Then. spectroscopic parameters of Yb:GSO were calculated and compared with those of another Yb-doped oxyorthosilicate crystal Yb:YSO. Results indicated that Yb:GSO crystal seemed to be a very promising laser gain media in generating ultra-pulses and tunable solid state laser applications. As expected, the output power of 2.72 W at 1089 nm was achieved in Yb:GSO crystal with absorbed power of only 4.22 W at 976 nm, corresponding to the slope efficiency of 71.2% through the preliminary laser experiment. (c) 2005 Elsevier Ltd. All rights reserved.

Infrared (1.2-1.6 mu m) luminescence in Yb, Cr : YAG with 940 nm diode pumping

Infrared (1.2-1.6 mum) luminescence in a yttrium aluminium garnet (YAG) crystal, co-doped with Yb (10 at.%) and Cr (0.05 at.%) ions, was investigated under CW laser diode pumping (lambda = 940 nm). The Cr4+ emission band was observed with its peak at 1.35 mum and measured to be about 6% with respect to Yb3+ IR luminescence (lambda = 1.03 mum). Analysis of the crystal absorption and luminescence spectra allows one to conclude that Yb3+-Cr4+ energy transfer is a mechanism responsible for the B-3(2)(T-3(2))-B-3(1)((3)A(2)) emission of Cr4+ ions. This crystal is promising as an efficient source of the near infrared emission. (C) 2004 Elsevier B.V. All rights reserved.

Yb：YAG晶体的红外闪烁特性

用脉冲电子束激发测量了不同Yb^3+掺杂浓度的Yb：YAG晶体的红外(IR)闪烁发光性能。Yb：YAG晶体的IR闪烁发光具有高的光产额和长的衰减时间，但存在浓度猝灭效应和温度依赖关系。Yb：YAG晶体的IR闪烁性能还与晶体品质有关，相同掺杂浓度的Yb：YAG晶体，品质优异的会获得更高的光产额。这一初步的研究成果表明，部分掺Yb^3+晶体有可能用于医学成像装置。

Yb掺杂的YAlO<3/sub>单晶体的温梯法生长和光谱性能

The dark-brown colored 5 at% Yb-doped YAlO3 (Yb:YAP) single crystal was grown successfully by temperature gradient technique (TGT) for the first time. The TGT-grown Yb:YAP crystal with the perovskite structure and excellent crystallization perfection were confirmed by the X-ray diffractions techniques. The dark-brown color of TGT-Yb:YAP crystal turned into the colorless after annealing in the air at 1200 degrees C for 10h. The absorption spectra, LD-excited infrared emission and X-ray excited luminescence spectra of the air-annealed Yb:YAP single crystal were investigated at the room temperature. The results indicate that the TGT-Yb:YAP single crystals can be used for the laser and scintillation applications. (c) 2005 Elsevier B.V. All rights reserved.

Growth and spectral properties of Gd2SiO5 crystal codoped with Er and Yb

Gd2SiO5 (GSO) single crystal codoped with Yb3+ and Er3+ (Abbr. as Er:Yb:GSO) was successfully grown by the Czochralski (CZ) method for the first time and the spectral characteristics were investigated. The absorption and fluorescence spectra were measured. The emission lifetime of the I-4(13/2)-Er-level was measured to be 5.84ms and the emission cross-section at 1529nm was calculated to be 1.03 x 10(-20) cm(2). The results indicate that Er:Yb:GSO is a potential laser material at similar to 1. 55 mu m wavelength region. (c) 2006 Elsevier B.V. All rights reserved.

Growth and spectroscopic characteristics of Yb : GSO single crystal

For the first time, a high optical quality 10 at.% Yb3+-doped gadolinium oxyorthosilicate laser crystal Gd2SiO5 (GSO) was grown by the Czochralski (Cz) method. The segregation coefficient of Yb3+ was studied by the inductively coupled plasma atomic emission spectrometer (ICP-AES) method. The crystal structure has monoclinic symmetry with space group P2(1)/c; this was determined by means of an x-ray diffraction analysis. The absorption spectra, fluorescence spectra and fluorescence decay curves of Yb3+ ions in a GSO crystal at room temperature were also studied. Then, the spectroscopic parameters of Yb:GSO were calculated. The advantages of the Yb:GSO crystal include high crystal quality, quasi-four-level laser operating scheme, high absorption cross-sections and particularly broad emission bandwidth (similar to 72 nm). The results indicated that the Yb:GSO crystal seemed to be a very promising laser gain medium in diode-pumped femtosecond laser and tunable solid state laser applications when LD pumped at 940 and 980 nm.

Yb：YAG晶体的合作发光现象

研究了Yb：YAG晶体的合作发光现象。当用940hm的近红外光激发时，Yb：YAG晶体有明显的上转换蓝色发光。实验发现498nm的蓝色发光强度与激发功率的平方成正比，而且Yb^3＋掺杂浓度越高，蓝色发光越强。分析表明这是Yb^3＋间强的相互作用导致的合作发光，是由于Yb^3＋在共价性的YAG基质中，它的4f^I3电子易于与近邻离子发生相互作用导致的。

Temperature dependence of the 1.03 mu m stimulated emission cross section of Cr : Yb : YAG crystal

The fluorescence emission spectra of Cr:Yb:YAG crystal are measured and the effective stimulated emission cross section of the crystal are obtained from -80 degrees C to +80 degrees C. A linear temperature dependence between -80 degrees C and +80 degrees C is reported for the 1.03 mu m peak stimulated emission cross section of Cr:Yb:YAG crystal. (c) 2004 Elsevier B.V. All rights reserved.

LD抽运Yb:GSO实现1090nm低阈值激光运转

We report what we believe to be the first demonstration of laser operation with a novel laser material of Yb3(+) -doped Gd-2 SiO2 (Yb: GSO) pumped by a laser diode at 940 nm. We obtained a low lasing threshold of 1.27 kW/cm(2) with the center wavelength of 1090 nm, which is lower than the value of 1.53 kW/cm(2) predicted for Yb: YAG. The maximal output power of 360 mW was obtained with a 2% output, which corresponds to a slope efficiency up to 19%.

Direct synthesis and intense luminescence of Y2O3 : Eu nanophosphors by complexation combustion

In this paper, we report the synthesis of high-luminance Y2O3:Eu nanocrystal through a citrate-nitrate complexation combustion method at a low temperature of 200-280 degrees C. The as-combusted Y2O3:Eu phosphors are almost equiaxed crystallites with an average size of 30-40 run, and have an intense red luminescence. The present fuel-deficient method suggests that by control of the ratio of citric acid to nitrates, it is valuable for the fabrication of Y2O3 nanoparticles without heat treatment. This process should be applicable to a wide range of nanocrystal oxides.

Effects of gamma irradiation and air annealing on Yb-doped YAlO3 single crystals

The effects of gamma irradiation on as-grown 5 at% Yb:YAlO3 (YAP) and air annealing on gamma-irradiated 5 at% Yb: YAP have been studied by the difference in the absorption spectra before and after treatment. The gamma irradiation and air annealing led to opposite changes of the absorption properties of the Yb: YAP crystal. After air annealing, the gamma-irradiation effects were totally removed over the wavelength range 390-800 nm and the concentrations of Fe3+ and Yb3+ were slightly increased. For the first time, the gamma-irradiation-induced valence changes between Yb3+ and Yb2+ ions in Yb: YAP crystals have been observed. (c) 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Comparison of spectroscopic parameters of 15 at% Yb : YAlO3 and 15 at% Yb : Y3Al5O12

Yb: YAlO3 (YAP) (15 at %) and Yb: Y3Al5O12 (YAG)(15 at %) have been grown using the Czochralski method. Their absorption and fluorescence spectra were measured at room temperature and important spectroscopic parameters were calculated. Through the comparison of spectroscopic parameters of Yb:YAP and Yb: YAG, all results indicate that 15 at % Yb:YAP crystal is a potential candidate used for compact, efficient thin chip lasers when the laser output wavelength is 1012 or 103 8 nm. (C) 2004 Elsevier B.V. All rights reserved.

Yb掺杂原子数分数为0．5％的Yb：Y3Al5O12晶体的光谱分析

采用提拉法生长了Yb掺杂原子数分数为0．5％的Yb：Y3Al5O12。（Yb2YAG）晶体，对晶体的吸收光谱和荧光光谱进行了分析。与Yb掺杂原子数分数为5％的Yb：YAG晶体进行了对比，得出采用940nm激光二极管（LD）抽运晶体最为合适。原子数分数为0．5％的Yb：YAG晶体相对于原子数分数为5％的Yb：YAG晶体白吸收效应的影响要小。测量了原子数分数为0．5％的Yb：YAG晶体的荧光寿命为0．95ms，与理论值很接近。因此采用原子数分数为0．5%的Yb：YAG晶体作为激光工作物质将有利于高效、小型集成

不同Yb掺杂量的Yb：Y3Al5O12晶体的光谱分析

采用提拉法生长了Yb^3＋掺杂量分别为5．4at％，16．3at％，27．1at％，53．6at％和100at％的Yb：Y3Al5O12晶体．系统地表征和分析了Yb^3＋掺杂量对晶体吸收光谱和荧光光谱的影响．随着Yb^3＋掺杂量的增加，各峰值吸收系数呈线性增加的趋势．应用Smakula公式计算了各吸收峰对应的振荡强度，并分析了Yb^3＋掺杂量对振荡强度的影响．当Yb^3＋掺杂量增加到27．1at％时观察到了荧光猝灭现象；当Yb^3＋掺杂量增加到53．6at％时，荧光光谱的线形发生了很大的变化。

Characterization of diode-pumped laser operation of a novel Yb : GSO crystal

We report what is believed to be the first demonstration of the laser action of Yb3+ -doped Gd2SiO5 (Yb:GSO) crystal pumped by a 940-nm laser diode at room temperature. The threshold of laser generation is only 0.85 kW/cm(2), which is smaller than the theoretic threshold of Yb:YAG (1.54 kW/cm(2)). The laser wavelength is 1090 mn. With a 2.5% output coupler, the maximum output power is 415 mW under a pump power of 5 W. By using the SESAM, the Q-switched mode locking and CW mode-locked operations are demonstrated.