The fabrication of GaN-based nanopillar light-emitting diodes

InGaN/GaN multiple quantum well-based light-emitting diode (LED) nanopillar arrays were fabricated using Ni self-assembled nanodots as etching mask. The Ni nanodots were fabricated with a density of 6 x 10(8)-1.5 x 10(9) cm(-2) and a dimension of 100-250 nm with varying Ni thickness and annealing duration time. Then LED nanopillar arrays with diameter of approximately 250 nm and height of 700 nm were fabricated by inductively coupled plasma etching. In comparison to the as-grown LED sample an enhancement by a factor of four of photoluminescence (PL) intensity is achieved for the nanopillars and a blueshift as well as a decrease in full width at half maximum of the PL peak are also observed. The method of additional chemical etching was used to remove the etching-induced damage. Then nano-LED devices were further completed using a planarization approach to deposit p-type electrode on the tips of nanopillars. The current-voltage curves of both nanopillars and planar LED devices are measured for comparison.

A DUAL ION-BEAM EPITAXY SYSTEM

The design and characteristics of a dual ion beam epitaxy system (DIBE) are discussed. This system is composed of two beam lines, each providing a mass-separated ion beam converging finally with the other into the target chamber. The ions are decelerated and deposited on a substrate which can be heated to a temperature of 800-degrees-C. Currents of a few hundred microamperes are available for both beams and the deposit energies are in the range from tens to 1000 eV. The pressure of the target chamber during processing is about 7 x 10(-6) Pa. Preliminary experiments have proved that compound semiconductor materials such as GaN can be synthesized using the DIBE system.

PHOTOLUMINESCENCE AND SURFACE PHOTOVOLTAIC SPECTRA OF STRAINED INP ON GAAS

A high energy shift of the band-band recombination has been observed in the photoluminescence (PL) spectra of the strained InP epilayer on GaAs by metalorganic chemical vapor deposit. The strain determined by PL peak is in good agreement with calculated thermal strain. The surface photovoltalic spectra gives the information about energy gap, lattice mismatching, and composition of heteroepilayers, diffusion length, surface, and interface recombination velocity of minority carriers of heteroepitaxy layers.

Dislocation movement in nitrogen-doped Czochralski silicon

Dislocation movement in N-doped Czochralski silicon (Cz-Si) was surveyed by four point bend method. Dislocation movement velocities in Cz-Si doped with nitrogen, with both nitrogen and antimony, and with only antimony were investigated. The order of measured dislocation movement velocities, at 700 degrees C less than or equal to T less than or equal to 800 degrees C and under resolved stress sigma=4.1 kg/mm(2), was V-Sb.O > V-n.Sb.O>V-N.O. The experiments showed that nigtrogen doping could retard the movement of dislocations.

Growth of SiGe by D-UHV/CVD at Low Temperature

The temperature is a key factor for the quality of the SiGe alloy grown by D-UHV/CVD. In conventional conditions,the lowest temperature for SiGe growth is about 550℃. Generally, the pressure of the growth chamber is about 10~(-5) Pa when liquid nitrogen is introduced into the wall of the growth chamber with the flux of 6sccm of the disilane gas. We have succeeded in depositing SiGe films at much lower temperature using a novel method. It is about 10.2 Pa without liquid nitrogen, about 3 magnitudes higher than the traditional method,leading to much faster deposition rate. Without liquid nitrogen,the SiGe film and SiGe/Si superlattice are grown at 485℃. The DCXRD curves and TEM image show that the quality of the film is good. The experiments show that this method is efficient to deposit SiGe at low temperature.

High-mobility Ga-polarity GaN achieved by NH3-MBE

GaN epilayers were grown on (0001) sapphire substrates by NH3-MBE and RF-MBE (radio frequency plasma). The polarities of the epilayers were investigated by in-situ RHEED, chemical solution etching and AFM surface examination. By using a RF-MBE grown GaN layer as template to deposit GaN epilayer by NH3-MBE method, we found that not only Ga-polarity GaN films were repeatedly obtained, but also the electron mobility of these Ga-polarity films was significantly improved with a best value of 290 cm(2)/V.s at room temperature. Experimental results show it is an easy and stable way for growth of high quality Ga-polarity GaN films.

沉积物中导热体周围水合物分解范围研究

沉积物水合物在热源周围的分解范围是水合物热开采以及相关灾害分析的重要基础数据.该文针对平面内边界有恒温热源的水合物热分解范围问题进行了理论分析和四氢呋喃水合物沉积物模型实验,并将两者结果进行了对比.结果表明:沉积物水合物最大分解范围主要取决于热源与环境温度的温差;热源周围水合物热分解最大范围的理论值与实验值接近,误差小于5%

液化土层中桶形基础承载力弱化的数值模拟

对动冰载作用下饱和砂土层液化过程中桶形基础承载力的弱化规律进行了数值模拟。建立液化土层的简化计算模型,采用FLAC3D软件分析了等效动冰载作用下土层不同位置的液化度及其主要影响因素;进而将具一定液化度土层的抗力作用等效为沿桶壁的不同刚度的非线性弹簧作用,在给定的位移破坏标准下确定不同液化度土层中桶形基础的承载力,分析液化土层中桶形基础承载力的弱化特征。在文中荷载条件和计算模型下,当土层顶面液化度为0.60、底面液化度为0.06时,土层中桶形基础的承载力降低12%。

粉土地层中桶形基础水平动载响应的离心机实验研究

对动载作用下分层土中单桶基础动承载特性、四桶基础动承载特性进行了离心机实验模拟,并对动载后桶基静承载力进行了模拟。结果表明:桶顶与粘土面相同时,有上覆粘土层条件下的桶基动力响应较无上覆粘土层条件下的孔压增长小,但沉陷大;桶顶与粘土层下的砂土面相同时比与粘土面相同时的响应大。桶基在动载后的静承载力得到提高。由于液化区的滤波和对动载的衰减作用,发生沉降的范围有限,离桶壁约一倍桶高距离。超孔隙水压从桶基边沿水平向逐渐衰减,从土面开始往下逐渐衰减到零。桶基周围砂土完全液化的厚度随载荷幅值的增加而增加,最大值约为桶高的40%。

The level and distribution of chromosomal aberration of tomato seeds at different penetration depths of carbon ions

The relationship between the penetration depth and the level and distribution of chromosomal aberration of the root tip cells were investigated by exposure of the superposed tomato seeds to 80 MeV/u carbon ions. The results showed that on the entrance of the beam the chromosomal aberration level was low. Damage such as breaks and gaps were dominant. At the Bragg peak, the chromosomal aberration level was high. The yields of dicentrics, rings and disintegrated small chromosomes increased but the yields of breaks and gaps decreased. These results are consistent with the distribution of the physical depth dose pro. le of carbon ions. It is effective to deposit the Bragg peak on the seeds to induce hereditary aberration in the mutation breeding with heavy ions.

the ebb-tidal delta of the venice lagoon,Italy

Very high-resolution seismic lines were collected offshore the Venice Lagoon in the framework of the Co.Ri.La'New very high resolution seismic methods to study the Venice Lagoon subsoil' project. The 140 km boomer profiles led to the identification of a convex-upward,lens-shaped body just outside the Lido inlet,one of the three lagoon inlets,which has been interpreted as an ebb-tidal delta.The comparison between the scismostratigraphic setting og this deposit, as revealed by the seismic lines,and the analyses of historicalbathymetric maps highlighted the key role of human interventions in the formation and evolution of the Lido inlet cbb-tidal delta.To preserve the lagoon environment but also to ensure a navigable way, human interventions at the Lidoinlet,performed since the fourteenth centtury, caused profound variations in the inlet dynamics,ldading to a progressive increase in the sediment dispersion from the lagoon interior towards the sea. The ebb-tidal delta of the Lido nilet is thus a very recent feature compared with the formation of the Venice lagoon and formed mainly as a consequence of the construction of the two jetties that have bound the inlet form AD 1886 to the present day.

从沙尘暴看黄土的沉积及黄土高原的形成

以近年来我国西北地区多发的沙尘暴现象为缘起 ,对沙尘暴的特征、发生机制等进行了讨论 ;论述了沙尘暴引起的降尘与黄土的堆积和沉积的过程 ;黄土堆积沉积的年龄、颗粒成分等 ;以及沙尘暴与黄土高原的形成之间的关系 ,同时论述了黄土高原的环境变迁 .认为高空均质粉尘的降落是不均匀的 ;高空降尘是突发的 ,而风及流水对堆积粉尘的改造是长期和连续的

Electrochemical preparation of silver nanostructure on the planar surface for application in metal-enhanced fluorescence

We introduce a fast and simple method, named the potentiostatic electrodeposition technique, to deposit metal particles on the planar surface for application in metal-enhanced fluorescence. The as-prepared metallic surfaces were comprised of silver nanostructures and displayed a relatively homogeneous morphology. Atomic force microscopy and UV-visible absorption spectroscopy were used to characterize the growth process of the silver nanostructures on the indium tin oxide (ITO) surfaces. A typical 20-fold enhancement in the intensity of a nearby fluorophore, [Ru(bpy)(3)](2+), could be achieved on the silvered surfaces. In addition, the photostability of [Ru(bpy)(3)](2+) was found to be greatly increased due to the modification of the radiative decay rate of the fluorophore. It is expected that this electrochemical approach to fabricating nanostructured metallic surfaces can be further utilized in enhanced fluorescence-based applications.

Magnetic and electronic properties of CaCu3Cr4O12 and CaCu3Cr2Sb2O12 by first-principles density functional calculation

The electronic and magnetic properties of CaCu3Cr4O12 and CaCu3Cr2Sb2O12 are investigated by the use of the full-potential linearized augumented plane wave (FPLAPW) method. The calculated results indicate that CaCu3- Cr4O12 is a ferrimagnetic and half-metallic compound, in good agreement with previous theoretical studies. CaCu3- Cr2Sb2O12 is a ferrimagnetic semiconductor with a small gap of 0.136 eV. In both compounds, because Cr4+ 3d (d(2)) and Cr3+ 3d (d(3)) orbitals are less than half filled, the coupling between Cr-Cu is antiferromagnetic, whereas that between Cu-Cu and Cr-Cr is ferromagnetic. The total net spin moment is 5.0 and 3.0 mu(B) for CaCu3Cr4O12 and CaCu3Cr2Sb2O12, respectively. In CaCu3Cr4O12, the 3d electrons of Cr4+ are delocalized, which strengthens the Cr-Cr ferromagnetic coupling. For CaCu3Cr2Sb2O12, the doping of nonmagnetic ion Sb5+ reduces the Cr-Cr ferromagnetic coupling, and the half-filled Cr3+ t(2g) (t(2g)(3)) makes the chromium 3d electrons localized. In addition, the ordering arrangement of the octahedral chromium and antimony ions also prevents the delocalization of electrons. Hence, CaCu3Cr2Sb2O12 shows insulating behavior, in agreement with the experimental observation.

Simple and convenient preparation of Au-Pt core-shell nanoparticles on surface via a seed growth method

Au-Pt core-shell nanoparticles were prepared on glass surface by a seed growth method. Gold nanoparticles were used as seeds and ascorbic acid-H2PtCL6 solutions as growth solutions to deposit Pt shell on the surface of gold nanoparticles. These core-shell nanoparticles and their growth process were examined by UV-Vis spectroscopy, X-ray photoelectron spectroscopy, atomic force microscopy and field-emission environmental scanning electron microscopy and the results indicated that the deposition speed was fast and nanoparticles with obvious core-shell structure could be obtained after 2 min. Moreover, this seed growth method for preparation of the core-shell nanoparticles is simple and convenient compared with other seed growth methods with NH4OH as a mild reductant. In addition, electrochemical experiments indicated that these Au-Pt core-shell nanoparticles had similar electrochemical properties to those of the bulk Pt electrode.