基于Rete算法的多Agent的实时协同推理

1 引言多Agent系统是由若干具有一个或多个目标的Agent按照一定的信息关系和控制关系以及问题求解能力的分布模式组成的系统,它主要研究一组在逻辑上或物理上分离的Agent之间行为的协调。目前,多Agent系统已应用于诸如空中交通控制、电子商务、通讯网络管理和作业调度等生产实际领域。Agent技术应用到实际领域时映射的对象一般有

基于过程Agent及联合体投标的人力资源调度方法

随着软件产品规模的扩大和应用领域的扩展，对软件过程管理的要求也越来越高。在软件开发过程中，人力资源是最重要的一种资源，人力资源调度的优劣将直接影响软件开发过程的产品质量、成本和进度。因此，合理高效的人力资源调度方法和工具能够为软件企业在人力资源优化调度、项目进度安排等方面提供决策支持，进而提高软件企业的项目管理能力和人力资源利用效率。 传统的人力资源调度方法过度依赖于项目负责人的个人经验及主观判断，且所得到的调度结果具有较高的不稳定性和不可靠性。为了能够为软件项目管理人员在人力资源调度方面提供一个更为客观、有效的调度方法，本文提出了基于过程Agent及联合体投标的人力资源调度方法。与传统的人力资源调度方法不同，该方法充分考虑到人力资源的特殊性，以人为核心，按人力资源能力的差别将人力资源建模成不同的过程Agent，并引入市场经济中的联合体投标方法进行调度。 本文首先对人力资源、过程Agent、目标等进行了建模，引入了投标邀请、标书以及联合体等概念，并在此基础上提出了通过过程Agent间的协商而实现人力资源调度的模型。该模型将人力资源依据能力的不同划分为不同的过程Agent，过程Agent再依据各自的投标策略响应投标邀请——或进行投标，或发出新的投标邀请。最后，具有“项目经理”角色的过程Agent将对这些投标进行评审，并依据用户对软件产品质量、生产成本以及生产进度的偏好选择合适的标书，生成人力资源调度计划。 由于现实的软件开发活动中经常会出现人力资源不充足的情况，因此在很多情况下都无法得到一个完整的人力资源调度计划。本文前面提出的方法虽然能够在资源不充足的情况下得到一个部分的调度结果，但却不能给出资源缺乏的具体情况，以至于项目负责人无法判定是否需要招聘新的人员。基于此，本文在协商模型中引入了两个改进的协商策略——容差调度及虚拟资源调度。容差调度是指，当没有足够的资源而现有资源能够完成的任务离需求在一个可以“容忍”的范围内时，认为资源是充足的；虚拟资源调度是指，当资源不充足时，假定有足够数量的“虚拟的”资源可供调度。由于对人力资源及目标等的描述都存在一定的误差，因此容差调度可以在很大程度上提高人力资源调度的成功率；而虚拟资源调度将在调度结果中显示资源缺乏的信息，供项目负责人做出决策时参考。 最后根据该方法设计和开发了相应的人力资源调度系统，并进行了实验验证，证明了方法的有效性，可以为项目负责人进行项目管理时提供决策支持。

Phonon-limited mobility in two-dimensional semiconductors with spin-orbit coupling

The authors demonstrate that the Rashba spin-orbit interaction in low-dimensional semiconductors can enhance or reduce the electron-phonon scattering rate by as much as 25%. The underlying mechanism is that the electron-phonon scattering phase space for the upper (lower) Rashba band is significantly enhanced (suppressed) by the spin-orbit interaction. While the scattering time decreases for the upper level, the mobility of the level increases due to an additional term in the electron velocity. (C) 2007 American Institute of Physics.

Electronic structure and magnetic coupling properties of Gd-doped AlN: first-principles calculations

In this work, the electronic structure and magnetic coupling properties of Gd doped AlN have been investigated using first-principles method. We found that in the AlN:Gd system, due to the s-f coupling allowed by the symmetry, the exchange splitting of the conduction band is much larger than that of the valence band, which makes the electron-mediated ferromagnetism possible in this material. This property is also confirmed by the energy differences between anti-ferromagnetic and ferromagnetic phase for Al14Gd2N16 with different concentrations of electrons (holes), as well as by the calculated exchange constants. The result indicates that Gd-doped AlN is a promising candidate for the applications in future spintronic devices.

Resonant subband Landau level coupling in symmetric quantum well

Subband structure and depolarization shifts in an ultrahigh mobility GaAs/Al0.24Ga0.76As quantum well are studied using magnetoinfrared spectroscopy via resonant subband Landau level coupling. Resonant couplings between the first and up to the fourth subbands are identified by well-separated antilevel-crossing split resonance, while the hy-lying subbands were identified by the cyclotron resonance linewidth broadening in the literature. In addition, a forbidden intersubband transition (first to third) has been observed. With the precise determination of the subband structure, we find that the depolarization shift can be well described by the semiclassical slab plasma model and the possible origins for the forbidden transition are discussed.

The exciton-longitudinal-optical-phonon coupling in InGaN/GaN single quantum wells with various cap layer thicknesses

This paper studies the exciton-longitudinal-optical-phonon coupling in InGaN/GaN single quantum wells with various cap layer thicknesses by low temperature photoluminescence (PL) measurements With increasing cap layer thickness, the PL peak energy shifts to lower energy and the coupling strength between the exciton and longitudinal-optical (LO) phonon, described by Huang-Rhys factor, increases remarkably due to an enhancement of the internal electric field With increasing excitation intensity, the zero-phonon peak shows a blueshift and the Huang-Rhys factor decreases These results reveal that there is a large built-in electric field in the well layer and the exciton-LO phonon coupling is strongly affected by the thickness of the cap layer

ANTICROSSING DUE TO RESONANT COUPLING OF HOLE LEVELS IN ASYMMETRIC COUPLED-QUANTUM-WELLS

We present distinct evidence of anticrossing behavior for excitonic transitions due to resonant coupling of heavy-hole ground levels in a biased GaAs/Al0.35Ga0.65As/GaAs (50/40/100 angstrom) asymmetric coupled-double-quantum-wells p-i-n structure by using photoluminescence spectra. The minimum level splitting is about 2.5 meV.