ANTICROSSING DUE TO RESONANT COUPLING OF HOLE LEVELS IN ASYMMETRIC COUPLED-QUANTUM-WELLS
| Data(s) |
1993
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|---|---|
| Resumo |
We present distinct evidence of anticrossing behavior for excitonic transitions due to resonant coupling of heavy-hole ground levels in a biased GaAs/Al0.35Ga0.65As/GaAs (50/40/100 angstrom) asymmetric coupled-double-quantum-wells p-i-n structure by using photoluminescence spectra. The minimum level splitting is about 2.5 meV. |
| Identificador | |
| Idioma(s) |
英语 |
| Fonte |
XU SJ; JIANG DS; LI GH; ZHANG YH; LUO JS.ANTICROSSING DUE TO RESONANT COUPLING OF HOLE LEVELS IN ASYMMETRIC COUPLED-QUANTUM-WELLS,CHINESE PHYSICS LETTERS,1993,10(7):433-436 |
| Palavras-Chave | #半导体物理 #OSCILLATIONS |
| Tipo |
期刊论文 |
