Polarized spectral analysis of Ho3+ ions in biaxial YAlO3 crystal for 2 mu m lasers

An Ho3+-doped YAlO3 (Ho : YAP) single crystal has been grown by the Czochralski technique. The polarized absorption spectra, polarized fluorescence spectra and fluorescence decay curve of the crystal are measured at room temperature. The spectroscopic parameters are calculated based on Judd-Ofelt theory, and the effective phenomenological intensity parameters Omega(2,eff), Omega(4,eff) and Omega(6,eff) are obtained to be 2.89 x 10(-20), 2.92 x 10(-20) and 1.32 x 10(-20) cm(2), respectively. The room-temperature fluorescence lifetime of the Ho3+ 5I(7) -> I-5(8) transition is measured to be 8.1 ms. Values of the absorption and emission cross-sections with different polarizations are presented for the I-5(7) manifold, and the polarized gain cross-section curves are also provided and discussed.

Study on the perfection of in situ P-injection synthesis LEC-InP single crystals

Undoped, S-doped and Fe-doped InP crystals with diameter up to 4-inch have been pulled in drop 10 0 drop -direction under P-rich condition by a rapid P-injection in situ synthesis liquid encapsulated Czochralski (LEC) method. High speed photoluminescence mapping, etch-pit density (EPD) mapping and scanning electron microscopy have been used to characterize the samples of the single crystal ingots. Dislocations and electrical homogeneity of these samples are investigated and compared. By controlling the thermal field and the solid-liquid interface shape, 4-inch low-EPD InP single crystals have been successfully grown by the rapid P-injection synthesis LEC method. The EPD across the wafer of the ingots is less than 5 x 10(4) cm(-2). Cluster defects with a pore center are observed in the P-rich LEC grown InP ingots. These defects are distributed irregularly on a wafer and are surrounded by a high concentration of dislocations. The uniformity of the PL intensity across the wafer is influenced by these defects. (C) 2004 Elsevier B.V. All rights reserved.

1ps passively mode-locked laser operation of Na, Yb : CaF2 crystal

Diode-pumped passively mode-locked laser operation of Yb3+,Na+:CaF2 single crystal has been demonstrated for the first time. By using a SESAM ( semiconductor saturable mirror), simultaneous transform-limited 1-ps passively mode-locked pulses, with the repetition rate of 183MHz, were obtained under the self-Q-switched envelope induced by the laser medium. The average output power of 360mW was attained at 1047nm for 3.34W of absorbed power at 976nm, and the corresponding pulse peak power arrived at 27kW, indicating the promising application of Yb3+,Na+-codoped CaF2 crystals in achieving ultra-short pulses and high pulse peak power. (c) 2005 Optical Society of America.

Numerical analysis of LEC growth of GaAs with an axial magnetic field

A set of numerical analyses for momentum and heat transfer For a 3 in. (0.075 m) diameter Liquid Encapsulant Czochralski (LEC) growth of single-crystal GaAs with or without all axial magnetic field was carried Out using the finite-element method. The analyses assume a pseudosteady axisymmetric state with laminar floats. Convective and conductive heat transfers. radiative heat transfer between diffuse surfaces and the Navier-Stokes equations for both melt and encapsulant and electric current stream function equations Cor melt and crystal Lire considered together and solved simultaneously. The effect of the thickness of encapsulant. the imposed magnetic field strength as well as the rotation rate of crystal and crucible on the flow and heat transfer were investigated. (C) 2002 Published by Elsevier Science Ltd.

The growth of SiC on Si substrates with C2H4 and Si2H6

SiC was grown on Si (100) substrates oriented and off-oriented by 2-5 degrees towards [011] with simultaneous supply of C2H4 and S2H6 at 1050 degrees C. SiC formed during removal of oxide could be removed at 1150 degrees C. Twinned growth occurred on both oriented and off-oriented substrates during carbonization, but fewer twins formed on the off-oriented substrate than that on the oriented substrate. In SiC growth process, twinned growth continued on the off-oriented substrate whereas twinned growth stopped and single crystal SiC with double-domain (2 x 1) superstructure formed on the oriented substrate. SiC single crystal could grow on a carbonized twinned buffer layer. Obvious SiC LO and TO phonon modes were observed with Raman spectroscopy in the epilayer grown on the oriented substrate. The surface of the epilayer grown on the oriented substrate was smooth, while there was a high density of islands on the epilayer grown on the off-oriented substrate. The film grown on the oriented substrate is superior than that grown on the off-oriented substrate. (C) 1999 Elsevier Science B.V. All rights reserved.

A study of the interface of CeO2/Si heterostructure grown by ion beam deposition

Epitaxial cerium dioxide films on single-crystal silicon substrates (CeO2/Si) have been grown by a dual mass-analyzed low-energy ion beam deposition (IBD) system. By double-crystal X-ray diffraction (XRD), Full Width at Half Maximum (FWHM) are 23' and 33' in the rocking curves for (222) and (111) faces of the CeO2 film, respectively, and the lattice-mismatch Delta a/a with the substrate is about - 0.123%. The results show that the CeO2/Si grown by IBD is of high crystalline quality. In this work, the CeO2/Si heterostructure were investigated by X-ray Photoelectron Spectroscopy (XPS) and Auger Electron Spectroscopy (AES) measurements. Especially, XPS and AES depth profiling was used to analyze the compositions and structures in the interface regions of the as-grown and post-annealed CeO2/Si. It was found that there was no silicon oxide in the interface region of the as-grown sample but silicon oxide in the post-annealed sample. The reason for obtaining such high quality heterostructure mainly depends on the absence of silicon oxide in the surface at the beginning of the deposition. (C) 1998 Elsevier Science Ltd. All rights reserved.

Properties of GaAs single crystals grown by molecular beam epitaxy at low temperatures

Properties of GaAs single crystals grown at low temperatures by molecular beam epitaxy (LTMBE GaAs) have been studied. The results shaw that excessive arsenic atoms of about 10(20) cm(-3) exist in LTMBE GaAs in the form of arsenic interstitial couples, and cause the dilation in lattice parameter of LTMBE GaAs, The arsenic interstitial couples will be decomposed, and the excessive arsenic atoms will precipitate during the annealing above 300 degrees C. Arsenic precipitates accumulate in the junctions of epilayers with the increase in the temperature of annealing. The depletion regions caused by arsenic precipitates overlap each other in LTMBE GaAs, taking on the character of high resistivity, and the effects of backgating or sidegating are effectively restrained.

Wet etching and infrared absorption of AlN bulk single crystals

The defects and the lattice perfection of an AlN (0001) single crystal grown by the physical vapor transport (PVT) method were investigated by wet etching, X-ray diffraction (XRD), and infrared absorption, respectively. A regular hexagonal etch pit density (EPD) of about 4000 cm~(-2) is observed on the (0001) A1 surface of an AlN single crystal. The EPD exhibits a line array along the slip direction of the wurtzite structure, indicating a quite large thermal stress born by the crystal in the growth process. The XRD full width at half maximum (FWHM) of the single crystal is 35 arcsec, suggesting a good lattice perfection. Pronounced infrared absorption peaks are observed at wave numbers of 1790, 1850, 2000, and 3000 cm~(-1), respectively. These absorptions might relate to impurities O, C, Si and their complexes in AlN single crystals.

Characterization of Phosphorus Diffused ZnO Bulk Single Crystals

Phosphorus was diffused into CVT grown undoped ZnO bulk single crystals at 550 and 800℃ in a closed quartz tube. The P-diffused ZnO single crystals were characterized by the Hall effect, X-ray photoelectron spectroscopy （XPS）, photoluminescence spectroscopy （PL）, and Raman scattering. The P-diffused ZnO single crystals are n-type and have higher free electron concentration than undoped ZnO, especially for the sample diffused at 800℃. The PL measurement reveals defect related visible broad emissions in the range of 420-550nm in the P-diffused ZnO samples. The XPS result suggests that most of the P atoms substitute in the Zn site after they diffuse into the ZnO single crystal at 550℃ ,while the P atom seems to occupy the O site in the ZnO samples diffused at 800℃. A high concentration of shallow donor defect forms in the P-diffused ZnO,resulting in an apparent increase of free electron concentration.

Two novel molybdenum complexes containing [Mo2O2S2](2+) fragment: synthesis, crystal structures and catalytic studies

Mo2O2S2(HGly)(GlY)(2) 1 and K-6[Mo2O2S2(nta)(2)][Mo2O2S2(ntaH)(2)]center dot 4H(2)O 2 were synthesized by the reactions of (NH4)(2)MoS4 and amino acids L (L = glycine, nitrilotriacetic acid) in ethanol-water medium at ambient temperature. The two complexes were characterized by elemental analysis, infrared spectra, UV-visible spectra, TG-DTA and XPS.

Crystal packing motifs of oligothiophenes end-capped with N-containing aryls

Oligothiophenes (OThs) end-capped with 3-quinolyl or pyridyl with nitrogen atom at meta-, ortho- or para-position were synthesized. The single-crystal structures of the resulting molecules, i.e., o-PyTh4, m-PyTh4, p-PyTh4, QuTh2, and QuTh3, were successfully determined by single-crystal X-ray analysis. Pyridyl end-capped OThs; o-PyTh4, m-PyTh4, and p-PyTh4, adopt the different herringbone packing arrangement in crystals depending on the position of the nitrogen atom because of the presence of weak C-H center dot center dot center dot N hydrogen bonds. The p-PyTh4 molecules are linked each other along the long axis of the molecules to form the extended chains by C-H center dot center dot center dot N dimer synthon. For m-PyTh4, the C-H center dot center dot center dot N interactions two-dimensionally extend through C-H center dot center dot center dot N trimer synthon.

Synthesis, characterization and mechanism of cetyltrimethylammonium bromide bilayer-encapsulated gold nanosheets and nanocrystals

Single-crystal Au nanosheets and fcc gold nanocrystals of uniform size were synthesized by a novel and simple route. The results of field-emission scanning electron microscopy (SEM), transmission electron microscopy (TEM) and X-ray diffraction (XRD) indicated the formation of the single-crystal structure of gold nanosheets and fcc nanocrystals. Energy-dispersive analysis of X-ray (EDAX) showed absorbance of cetyltrimethylammonium bromide (CTAB) molecules onto the surface of gold nanostructures.

Synthesis and Crystal Structure of a New 3D Copper B-Paradodecatungstate Compound: [Na-2(H2O)(8)][Na-8(H2O)(20)][Cu(en)(2)][W12O42] center dot 3H(2)O

A new polyoxotungstate complex [Na-2(H2O)(8)][Na-8(H2O)(20)][Cu(en)(2)][W12O42] center dot 3 H2O (1) (en = ethylenediamine) has been synthesized in aqueous solution and characterized by elemental analysis, IR spectroscopy and TG analysis, together with a single crystal X-ray diffraction study. In compound 1, the Cu(en)(2)(2+) complex cation links the [W12O42](12-) anions to form a I D chain, and the ID chains are further interconnected with Na-8(H2O)(20)(8+) and Na-2(H2O)(8)(2+) cations to construct a new 3D framework.

Hydrothermal synthesis, crystal structure and electrochemical properties of a novel 3D Dawson-type polyoxometalate supramolecular network

A novel Dawson-type polyoxometalate supramolecular architecture of the formula [4,4'-H(2)bipy](2.5)center dot[4,4'-Hbipy]center dot[P2W18O62]center dot 6.25H(2)O (4,4'-bipy = 4,4'-bipyridine) has been hydrothermally synthesised and characterised by means of elemental analysis, IR, CV and X-ray single-crystal diffraction. X-ray crystallography indicates that the title compound consists of Dawson-type polyoxoaions [P2W18O62](6-), water molecules and 4,4'-bipy units. The polyoxoanion clusters together with 4,4'-bipy units and water molecules to construct the three-dimensional supramolecular network through hydrogen bonds. The crystal structure analyses reveal that water molecules and 4,4'-bipy units play the important role on the packing arrangements of crystals. Cyclic voltammetry shows that the title compound exhibits three chemically reversible steps

Four New Lanthanide-Nitronyl Nitroxide (Ln(III)=Pr-III, Sm-III, Eu-III, Tm-III) Complexes and a Tb-III Complex Exhibiting Single-Molecule Magnet Behavior

Five new complexes based on rare-earth-radical [Ln(hfac)(3)(NIT-5-Br-3py)](2) (Ln=Pr (1), Sm (2), Eu (3), Tb (4), Tm (5); hfac = hexafluoroacetylacetonate; NIT-5-Br-3py = 2-(4,4,5,5-tetramethyl-3-oxylimidazoline-1-oxide)-5-bromo-3-pyridine) have been synthesized and characterized by X-ray crystal diffraction. The single-crystal structures show that these complexes have similar structures, in which a NIT-5-Br-3py molecule acts as a bridging ligand linking two Ln(III) ions through the oxygen atom of the N-O group and nitrogen atom from the pyridine ring to form a four-spin system. Both static and dynamic magnetic properties were measured for complex 4, which exhibits single-molecule magnetism behavior.