394 resultados para Lasers de Nd-YAG


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Using a low temperature grown GaAs wafer as an intracavity saturable absorber, a temporal envelope duration of 11 ns of Q- switched and mode- locked ( QML) 1064 nm operation was achieved in a very simple compact plane- concave cavity Nd: YVO4 laser, it was so short that the pulses can be used as Q- switching pulses. The maximal average output power is 808 mW with the repetition rate of 25 kHz, and the corresponding peak power and energy of a single Q- switched pulse was 2.94 kW and 32.3 mu J, respectively. The mode- locked pulse trains inside the Q- switched pulse envelope had a repetition rate of 800 MHz.

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A diode-pumped Nd:YVO4 laser passively Q switched by a semiconductor absorber is demonstrated. The Q-switched operation of the laser has an average output power of 135 mW with a 1.6 W incident pump power. The minimum pulse width is measured to be about 8.3 ns with a repetition rate of 2 MHz. To our knowledge, this is the first demonstration of a solid-state laser passively Q-switched by such a composite semiconductor absorber. (c) 2006 Optical Society of America.

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We report on an 880 nm LD pumped passive mode-locked TEM00 Nd:YVO4 laser based on a semiconductor saturable absorber mirror (SESAM) for the first time. When the incident pump power was 16 W, 4.76 W average output power of continuous-wave mode-locked laser with an optical-to-optical conversion efficiency of 30% was achieved. The repetition rate of mode-locked pulse was 80 MHz with 25 ps pulse width. The maximum pulse energy and peak power were 60 nJ and 2.4 kW, respectively.

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Narrowed spectra at 452 nm from a thin platelike crystal of distyrylbenzene derivative, 2,5-diphenyl-1,4-distyrylbenzene with two trans double bonds (trans-DPDSB) grown by vapor deposition, are observed. The trans-DPDSB crystal is irradiated by the third harmonic (355 nm) of a Nd:YAG laser. The FWHM of the narrowed spectra can reach 6 nm for the crystal when the pumping energy is 400 mu J/pulse. The threshold value for an optically pumped laser is approximately 350 mu J/pulse.

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Optically pumped stimulated emission behavior in an organic film was demonstrated in this study. The gain material consists of a laser dye perylene doped into polystyrene (PS) matrix in an appropriate weight ratio. The sample was transversely pumped by the three harmonic output of a mode-locked Nd:YAG laser. The change of the emission spectra showed a clear threshold action and gain narrowing phenomenon when increasing the excitation intensity. Three emission peaks were observed below the excitation threshold, which are locate at 446, 475 and 506 nm, respectively. However, only the gain narrowing peak centered at 475 nm could be detected above the threshold. The spectra narrowing observed results from the amplified spontaneous emission (ASE) in the gain material. (C) 2000 Elsevier Science S.A. All rights reserved.

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The multicolour three-photon resonant ionization spectra of U-238 were measured by using the pulsed dye lasers system synchronously pumped by a frequency doubled Nd:YAG-laser 532 nm output(operated at 10 Hz),a device for atomic beam of U, time-of-flight mass spectrometer and boxcar integrator. The dye laser pulses have a 6 ns duration. Beams from the dye lasers, which have the same polarization direction and are focused by lenses, entered an interaction chamber through opposite windows on a common axis and spatialy overlapped the U atomic beam. The optical pulse from dye laser DL2 was delayed to arrive at the interaction region 8 ns after the pulse from dye laser DL1; in the same way,the pulse from DL3 was delayed 8 ns after from DL2. The atomic beam device was made from stainless steel. We generated the U vapor by heating solid U in a graphite crucible by e-type electron -field on first excited states were studied in uranium atom. The question how to determine single-colour, two-colour and three-colour three-photon resonant ionization peak in the three-colour three-photon resonant ionization spectra diagram were solved.

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A numerical analysis was carried out to study the moving boundary problem in the physical process of pulsed Nd-YAG laser surface melting prior to vaporization. The enthalpy method was applied to solve this two-phase axisymmetrical melting problem Computational results of temperature fields were obtained, which provide useful information to practical laser treatment processing. The validity of enthalpy method in solving such problems is presented.

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利用Nd:YAG脉冲激光在不锈钢表层合金化SiO_2纳米颗粒,在熔池最表层14μm深度范围内形成Si合金化区域,Si含量呈非均匀分布特征。表层为非晶相与奥氏体的双相组织,非昌相约不散分布并呈现特殊的环状形貌,中心为非晶,外侧为纳米尺度的超细柱晶及等轴晶。分析了非晶形成机制。

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Coatings were synthesized by laser alloying of zirconium (Zr) particles using a pulsed Nd:YAG laser on an austenite stainless steel. The distribution of Zr is uneven, in a depth of 18 mum just below the surface of the pool. The coating consisted of duplex microstructures, i.e. metallic glass (MG) and austenite. The MG formed in Zr-contained regions, with the Zr composition ranging from 7.6 to 16.8 at.%. The formation of the MG was attributed to an increase in glass-forming ability by Zr addition.

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实验研究了连续波Nd:YAG激光焊接速度、侧吹保护气流量和离焦量等参量对激光穿透焊接K418和42CrMo焊缝成形的影响。结果表明,K418与42CrMo激光穿透焊接有X形和T形两种典型的焊缝形貌,且焊缝形貌是不对称的。随着焊接速度的提高,焊接线能量降低,焊缝尺寸变小,且焊缝上部尺寸变化比下部尺寸变化慢,焊缝形貌由X形过渡到T形。当离焦量在瑞利长度范围内时,焊缝正面宽度变化很小;当离焦量超出瑞利长度范围时,在足够高的激光功率密度下,焊缝正面宽度快速增加。在激光功率为3kW,侧吹保护气角度为35°条件下,通过优化焊接速度、侧吹保护气流量和离焦量等参量可以得到最佳焊缝质量。

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We reported here a novel technique for laser high speed drillings on Printed Circuit Boards (PCBs). A CNC solid laser based system is developed to drill through and blind vias as an alternative to mechanical drilling. The system employs an Acousto-Optic Q-switched Nd: YAG laser, a computer control system and an X-Y moving table which can handle up to 400 x 400 mm PCB. With a special designed cavity the laser system works in a pulsed operation in order to generate pulses with width down to 0.5 mu s and maximum peak power over 10kW at 10k repetition rate. Delivered by an improved optical beam transforming system, the focused laser beam can drill hobs including blind vias on PCBs with diameter in the range of 0.1 - 0.4 mm and at up to 300 - 500 vias per second (depending on the construction of PCBs). By means of a CNC X-Y moving system, laser pulses with pulse-to-pulse superior repeatability can be fired at desired location on a PCBs with high accuracy. This alternative technology for drilling through or blind vias on PCBs or PWBs (printed wiring boards) will obviously enhance the capability to printed boards manufacturing.

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研究了Nd:YAG脉冲激光离散加工时功率密度和作用时间对熔池几何形态的影响,5CrMnMo 钢的实验结果表明:在本文所涉及的加工条件下,熔池存在热传导型和深熔型两种形态;激光作用时间小于4ms时,在相同作用时间下,随着激光功率密度的增加,熔池深宽比显著增加;但当作用时间大于4ms后,功率密度对深宽比的影响减弱,基于线性热传导模型的计算结果表明:熔凝起始阶段的固态加热过程可忽略;熔池几何尺寸在激光脉冲结束后某个时刻达到最大值;当平均功率密度大于5x10(5)W/cm(2),同时激光作用时间大于2ms时,热传导型激光熔池向深熔型激光熔池转变。

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This paper performed a numerical simulation on temperature field evolution for the surface layer of a metallic alloy subjected to pulsed Nd:YAG laser treatment. The enthalpy method was adopted to solve the moving boundary problem, I.e. Stefan problem. Computational results were obtained to show the temperature field evolution. Effects of latent heat and mushy zone width on the temperature field were investigated. The results also show very high values of temperature gradient and cooling rate, which are typical characteristics during the solidification process.

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研究了Nd:YAG脉冲激光离散加工时功率密度和作用时间对熔池几何形态的影响。5CrMnMo钢的实验结果表明:在一定加工条件下,熔池存在热传导型和深熔型两种形态。激光作用时间小于4ms时,随着激光功率密度的增加,熔池深宽比显著增加;作用时间超过4ms后,功率密度对深宽比的影响减弱。基于线性热传导模型的计算结果表明:熔凝起始阶段固态加热过程可忽略;熔池几何尺寸在激光脉冲结束后某个时刻达到最大值;当平均功率密度大于5×10~5W/cm~2,同时激光作用时间大于2ms时,热传导型激光熔池向深熔型激光熔池转变。

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Microstructure characterization is important for controlling the quality of laser welding. In the present work, a detailed microstructure characterization by transmission electron microscopy was carried out on the laser welding cast Ni-based superalloy K418 turbo disk and alloy steel 42CrMo shaft and an unambiguous identification of phases in the weldment was accomplished. It was found that there are gamma-FeCrNiC austenite solid solution dendrites as the matrix, (Nb, Ti) C type MC carbides, fine and dispersed Ni-3 Al gamma' phase as well as Laves particles in the interdendritic region of the seam zone. A brief discussion was given for their existence based on both kinetic and thermodynamic principles. (c) 2007 Elsevier B.V. All rights reserved.