Study of a high power density sodium polysulfide/bromine energy storage cell

Nickel catalyst supported on carbon was made by reduction of nickelous nitrate with hydrogen at high temperature. Ni/ C catalyst characterization was carried out by XRD. It was found that the crystal phase of NiS and NiS2 appeared in the impregnated catalyst. Ni/ C and Pt/ C catalysts gave high performance as the positive and negative electrodes of a sodium polysulfide/ bromine energy storage cell, respectively. The overpotentials of the positive and negative electrodes were investigated. The effect of the electrocatalyst loading and operating temperature on the charge and discharge performance of the cell was investigated. A power density of up to 0.64 W cm(-2) ( V = 1.07 V) was obtained in this energy storage cell. A cell potential efficiency of up to 88.2% was obtained when both charge and discharge current densities were 0.1 A cm(-2).

飞秒激光脉冲在正色散固体材料中的自压缩

实验研究了正色散固体介质中的激光脉冲自压缩现象，证明了无需任何外加色散补偿情况下，固体透明介质中的自聚焦传输过程可使高功率飞秒激光脉冲实现时域脉冲压缩，并详细研究了输出脉冲的时域和频域特性随入射脉冲强度的演化规律．实验结果表明脉冲自压缩量随入射脉冲强度的增加呈递增趋势，然而当入射光强增大到足以引起超连续谱及锥形辐射产生时，脉冲时域形状会发生分裂．此外还发现发散光束入射情况下同样可以观察到脉冲自压缩现象．

基于强激光辐照固体锡靶产生极紫外光源的实验研究

建立了一套利用高功率YAG激光器辐照固体锡靶产生高转换效率极紫外光(extreme ultraviolet)源的实验装置.利用建立的实验装置开展了极紫外光源的强度和转换效率与抽运激光强度关系的实验研究,发现极紫外光源的转换效率随抽运激光强度的变化具有饱和效应.实验发现:当抽运激光能量达到250mJ时,极紫外光源的转换效率最高,波长为13.5nm处0.27nm带宽范围内的极紫外光源的能量转换效率为1.6%,此时对应的激光强度为1.8×1011W/cm2.

高功率光子晶体光纤激光器研究进展

光子晶体光纤的出现，为高功率光纤激光器的关键技术-大模区光纤的实现提供了新途径。基于铒镱共掺磷酸盐材料的包层掺杂新结构出现，为实现更加紧凑的光纤激光器提供了可能。常规高功率光纤激光器中的抽运技术，谐振腔技术和相干组束技术也在不断融入高功率光子晶体光纤激光器。高功率光子晶体光纤激光器的调Q和锁模输出也已经实现。

Modal fields and bending loss analyses of three-layer large flattened mode fibers

Theoretical method to analyze three-layer large flattened mode (LFM) fibers is presented. The modal fields, including the fundamental and higher order modes, and bending loss of the fiber are analyzed. The reason forming the different modal fields is explained and the feasibility to filter out the higher order modes via bending to realize high power, high beam quality fiber laser is given. Comparisons are made with the standard step-index fiber. (c) 2006 Elsevier B.V. All rights reserved.

高功率光纤激光器抽运耦合技术研究进展

综述了双包层光纤激光器端面、侧面和集中抽运耦合技术，分析表明侧面抽运耦合技术比端面抽运耦合技术更有利于获得高功率输出，其中分布包层抽运耦合技术是很理想的一种侧面抽运耦合方式。阐述了高功率光纤激光器的特点并介绍了光子晶体光纤和螺旋芯光纤的抽运耦合方式。

锥形光纤的功率分布特性

从波动理论出发,对锥形光纤的纵向传播常数进行泰勒(Taylor)级数展开,经近似得到了锥形光纤功率分布的解。基于此理论,对锥形光纤的功率分布特性进行了讨论,并分析了锥形光纤的长度、锥度和光纤折射率等参数对锥形光纤不同模式功率分布的影响。为了减小功率泄漏,当光从锥形光纤大端入射时,应当减小锥长,减小锥度,增大纤芯包层折射率差;当光从锥形光纤小端入射时,应当增加锥长,增加锥度,增大纤芯包层折射率差。在长锥长、大锥度情况下,光纤折射率分布的影响相对较小。

Design guidelines and characteristics for a kind of four-layer large flattened mode fibers

A theoretical method to analyze a kind of four-layer large flattened mode (LFM) fibers is presented. The properties of the fiber, including the fundamental and higher-order modal fields, effective area and bending loss are discussed by comparison. At the same time, the reasons for the different characteristics are considered. The obtained results indicate that the effective area of the four-layer LFM fiber is about 1.3 times larger than that of the conventional standard step-index fiber and the fiber can suppress the higher-order modes via bending effectively. The four-layer LFM fiber has less efficient bend-induced filtering ability than the conventional step-index fiber; however, it has more efficient filtering ability than the three-layer LFM fiber. (C) 2007 Elsevier GmbH. All rights reserved.

千瓦级双包层光纤激光器冷却方案设计理论和实验研究

尽管双包层光纤激光器的散热性能好于传统的固体激光器的散热性能,光纤激光器中的热沉积仍然是限制提高其输出功率的重要因素.以双端抽运的400W双包层光纤激光器为实例,定量分析了光纤内的热沉积分布.根据所建立的散热模型,为了确保千瓦级双包层光纤激光器安全稳定的运行,抽运端附近的对流换热系数应大于2.8×10-2W·cm-2K-1.据此设计出高功率双包层光纤激光器抽运端冷却装置并成功应用在激光系统中,获得了千瓦级的激光输出.

High-average-power and high-conversion-efficiency continuous wave mode-locked Nd : YVO4 laser with a semiconductor absorber mirror

A high-power continuous wave (cw) mode-locked Nd:YVO4 solid-state laser was demonstrated by use of a semiconductor absorber mirror (SAM). The maximum average output power was 8.1 W and the optic-to-optic conversion efficiency was about 41 %. At the maximum incident pump power, the pulse width was about 8.6 ps and the repetition rate was 130 MHz. Experimental results indicated that this absorber was suitable for high power mode-locked solid-state lasers. (C) 2006 Elsevier Ltd. All rights reserved.

Room temperature continuous wave operation of 1.33-micron InAs/GaAs quantum dot laser with high output power

Continuous wave operation of a semiconductor laser diode based on five stacks of InAs quantum dots (QDs) embedded within strained InGaAs quantum wells as an active region is demonstrated. At room temperature, 355-mW output power at ground state of 1.33-1.35 microns for a 20-micron ridge-waveguide laser without facet coating is achieved. By optimizing the molecular beam epitaxy (MBE) growth conditions, the QD density per layer is raised to 4*10^(10) cm^(-2). The laser keeps lasing at ground state until the temperature reaches 65 Celsius degree.

Low-threshold-current and high-out-power 660 nm laser diodes with a p-GaAs current blocking layer for DVD-RAM/R

We investigate a new structure of high-power 660-nm AlGaInP laser diodes. In the structure, a p-GaAs layer is grown on the ridge waveguide serving as the current-blocking layer, and nonabsorbing windows are only fabricated near the cavity facets to increase the catastrophic-optical-damage level. Stable fundamental mode operation was achieved at up to 80 mW without kinks, and the maximum output power was 184 mW at 22 degrees C. The threshold current was 40 mA.

Fabrication process and power and lifetime characteristics of very-small-aperture laser

High output power very-small-aperture laser has been created on 650 nm edge emitting laser diodes. The far-field output power is 0.4 mW at the 25 mA driving current, and the highest output power exceeds 1 mW. The special fabrication process is described and the failure mechanism leading to the short lifetime of the devices is discussed.