低能离子束方法制备重掺杂Fe的Si:Fe固溶体

利用质量分离的低能离子束方法,以离子能量为1000eV,剂量为3×1017cm-2,室温下往p型Si(111)单晶衬底注入Fe离子,注入的样品在400 C真空下进行热处理.俄歇电子能谱法(AES)对原位注入样品深度分析表明Fe离子浅注入到p型Si单晶衬底,注入深度约为42nm.X射线衍射法(XRD)对热处理样品结构分析发现只有Si衬底的衍射峰,没有其他新相.X射线光电子能谱法(XPS)对热处理样品表面分析发现Fe2p束缚能对应于单质Fe的峰,没有形成Fe的硅化物.这些结果表明重掺杂Fe的Si:Fe固溶体被制备.电化学C-V法测量了热处理后样品载流子浓度随深度的分布,发现Fe重掺杂Si致使Si的导电类型从p型转为n型,Si:Fe固溶体和Si衬底形成pn结,具有整流特性.

低能离子束方法制备Fe组分渐变的Fe-Si薄膜

利用质量分离的低能离子束技术，获得了Fe组分渐变的Fe-Si薄膜。利用俄歇电子能谱法(AEs)、x射线衍射法(XRD)以及x射线光电子能谱法(XPS)测试了薄膜的组分、结构特性。测试结果表明，在室温下制备的Fe-Si薄膜呈非晶态。非晶薄膜在400℃下退火20 rmn后晶化，没有Fe的硅化物相形成。退火后Fe-Si薄膜的Fe组分从表面向内部逐渐降低。

Influence of Fe Doping Concentration on Some Properties of Semi-Insulating InP

Properties of Fe-doped semi-insulating (SI) InP with different iron concentrations are studied by using Hall effect, current-voltage (I-V), photoluminescence spectroscopy (PL) and photocurrent spectroscopy (PC) measurements. I-V characteristics of SI InP strongly depend on Fe doping concentration. Fe doping concentration also influences optical properties and defective formation in as-grown SI InP. Band-gap narrowing phenomenon and defects in Fe doped SI InP are studied using PI and PC.

Investigation of Residual Donor Defects in Undoped and Fe-Doped LEC InP

The free electron concentration of as-grown liquid encapsulated Czochralski (LEC) InP measured by Hall effect is much higher than the concentration of net donor impurity determined by glow discharge mass spectroscopy. Evidence of the existence of a native donor hydrogen-indium vacancy complex in LEC undoped and Fe-doped InP materials can be observed with infrared absorption spectra. The concentration increase of the donor complex correlates with the increase of ionized deep acceptor iron impurity Fe~(2+) concentration in Fe-doped semi-insulating (SI) InP. These results indicate that the hydrogen-indium vacancy complex is an important donor defect in as-grown LEC InP, and that it has significant influence on the compensation in Fe-doped SI InP.

硅双极晶体管的低温h_（FE）

低温下h_(FE)主要决定于发射效率γ和集电区倍增因子M。影响γ的是禁带收缩和基区费米能级。M则主要由中性杂质被碰撞电离而造成的电流倍增效应决定，并且这是一种自抑制效应。以上观点与实验结果基本相符合。

氧合血红蛋白Fe-O2键合态ab initio研究

于2010-11-23批量导入

Growth of Fe doped semi-insulating InP by LP-MOCVD

The semi-insulating InP has been grown using ferrocene as a dopant source by low pressure MOCVD. Fe doped semiinsulating InP material whose resistivity is equal to 2.0x10(8)Omega*cm and the breakdown field is Beater than 4.0x10(4)Vcm(-1) has been achieved. It is found that the magnitude of resistivity increases with growing pressure enhancement under keeping TMIn, PH3, ferrocene (Fe(C5H5)(2)) flow constant at 620 degrees C growth temperature. Moreover, the experimental results which resistivity varies with ferrocene mole fraction are given. It is estimated that active Fe doping efficiency; eta, is equal to 8.7x10(-4) at 20mbar growth pressure and 620 degrees C growth temperature by the comparison of calculated and experimental results.

不同年限蔬菜温室土壤基本化学性质比较研究

本文对沈阳市郊大民屯镇不同年限蔬菜温室土壤化学性质进行研究与分析。得到主要结论如下： 蔬菜温室0～20 cm表层土壤有机质、全氮、速效磷、速效钾、铵态氮、硝态氮均处于较高的养分水平，并且随温室使用年限的延长，呈增加的趋势。土壤有酸化的趋势，土壤电导率呈升高态势。土壤有效态Fe、Mn、Cu、Zn含量分别为8.57～60.30 mg kg-1、2.69～22.43 mg kg-1、0.64～7.52 mg kg-1和0.56～9.29 mg kg-1，变异系数为50%左右；随着温室使用年限的增加，土壤有效态Fe、Mn、Cu、Zn含量总体上呈增加的趋势。土壤Ni、Cd的有效含量随种植年限的延长趋于增加，有效Pb呈现出下降的趋势，土壤重金属Cr的有效态含量与种植年限之间没有明显的相关性。 不同年限蔬菜温室土壤剖面有机质、全氮、速效磷及速效钾含量高于相邻的露地菜田土壤，并随种植年限的延长而增加，随土层深度的增加而下降。温室土壤中铵态氮的含量随温室种植年限的变化相对较小，在土壤剖面不同层次中变化也没有明显的规律性。与露地菜田土壤相比，温室土壤中有效态铁、锰含量下降，有效态铜、锌、铅、镍含量增加。0～30 cm土层土壤交换性Ca呈下降的趋势，交换性Mg呈上升的趋势，土壤Ca/Mg比值呈下降的趋势。