Influence of phosphine flow rate on Si growth rate in gas source molecular beam epitaxy

As reported by other authors, we have also observed that the Si growth rate decreases with increasing phosphine (PH3) flow rate in gas source-Si molecular beam epitaxy using phosphorous (P) as a n-type dopant. Why small quantity PH3 can affect Si growth rate? Up to now, the quantitative characterization of PH3 flow influence on Si growth rate is little known. In this letter, the PH, influence will be analyzed in detail and a model considering strong P surface segregation and its absorption of hydrogen will be proposed to characterize the effect. (C) 2000 Elsevier Science B.V. All rights reserved.

The dependence of growth rate of GaN buffer layer on growth parameters by metalorganic vapor-phase epitaxy

The growth rate of GaN buffer layers on sapphire grown by metalorganic vapor-phase epitaxy (MOVPE) in an atmospheric pressure, two-channel reactor was studied. The growth rate, as measured using laser reflectance, was found to be dependent on growth temperature, molar flow rate of the sources tin this case, trimethylgallium and ammonia) and the input configuration of sources into the reactor. A model of the GaN buffer layer growth process by MOVPE is proposed to interpret the experimental evidence. (C) 1998 Elsevier Science B.V. All rights reserved.

GaN epilayers grown at high growth rate using gas source molecular beam epitaxy method

High-quality GaN epilayers have been grown by gas source molecular beam epitaxy using ammonia as the nitrogen source. During the growth, the growth rate is up to 1.2 mu m/h and can be varied from 0.3 to 1.2 mu m. The unintentional n-type doping as low as 7x10(17) cm(-3) was obtained at room temperature. Low-temperature photoluminescence spectrum was dominated by near-edge emission without deep-level related luminescence, indicative of high-quality epilayers. (C) 1998 Elsevier Science B.V. All rights reserved.

Numerical evaluation of energy loss rate for hot carriers in quantum wells

Using the Frohlich potential associated with realistic optical phonon modes in quantum well systems, the energy loss rates of hot electrons, holes, and electron-hole pairs are calculated, with special emphasis on the effects of carrier density, hot phonon population, quantum well width, and phonon dispersion on the hot-carrier relaxation process in quasi-two-dimensional systems. (C) 1998 Academic Press Limited.

High epitaxial growth rate of 4H-SiC using TCS as silicon precursor

High homoepitaxial growth of 4H-SiC has been performed in a home-made horizontal hot wall CVD reactor on n-type 4H-SiC 8 degrees off-oriented substrates in the size of 10 mm x 10 mm, using trichlorosilane (TCS) as silicon precursor source together with ethylene as carbon precursor source. Cross-section Scanning Electron Microscopy (SEM), Raman scattering spectroscopy and Atomic Force Microscopy (AFM) were used to determine the growth rate, structural property and surface morphology, respectively. The growth rate reached to 23 mu m/h and the optimal epilayer was obtained at 1600 degrees C with TCS flow rate of 12 seem in C/Si of 0.42, which has a good surface morphology with a low Rms of 0.64 nm in 10 mu mx10 mu m area.

Simulation on Gain Recovery of Quantum Dot Semiconductor Optical Amplifiers by Rate Equation

The gain recoveries in quantum dot semiconductor optical amplifiers are numerically studied by rate equation models. Similar to the optical pump-probe experiment, the injection of double optical pulses is used to simulate the gain recovery of a weak continuous signal for the QD SOAs. The gain recoveries are fitted by a response function with multiple exponential terms. For the pulses duration of 10 ps, the gain recovery can be described by three exponential terms with the time constants, and for the pulse with the width of 150 fs, the gain recovery can be described by two exponential terms, the reason is that the short pulse does not consume lot of carriers.

Eye-safe, high-energy, single-mode all-fiber laser with widely tunable repetition rate

We present a novel high-energy, single-mode, all-fiber-based master-oscillator-power-amplifier (MOPA) laser system operating in the C-band with 3.3-ns pulses and a very widely tunable repetition rate, ranging from 30 kHz to 50 MHz. The laser with a maximum pulse energy of 25 mu J and a repetition rate of 30 kHz is obtained at, a wavelength of 1548 nm by using a double-clad, single-mode, Er:Yb co-doped fiber power amplifier.

陕西省水蚀土壤因子指标插值方法比较研究

基于地统计学原理和半变异理论,采用地理信息系统技术定量研究了陕西省水蚀土壤因子指标的空间变异特征。分析比较了反距离权重法、样条函数法与普通克吕格法对陕西省土壤因子指标空间插值的精度。结果表明,研究区土壤抗冲系数具有中等强度的空间相关性,块金系数为32.29%,而稳渗速率、崩解速率、抗剪强度均表现为强烈的空间相关性,块金系数分别为13.19%,11.61%和12.98%。综合考虑平均相对误差、均方差及插值效果,认为普通克吕格法最好,更能反映土壤参数的空间特征并符合区域水土流失模型对数据的要求。对于普通克吕格法,稳渗速率的Lag步长为30 000 m,半方差理论模型为指数模型;抗冲系数、崩解速率、抗剪强度的Lag步长为55 000,半方差理论模型均为高斯模型。在空间分布上,各指标随土壤类型由北到南呈现明显的地带性规律。

黄土高原水蚀风蚀交错带不同土地利用类型土壤呼吸季节变化及其环境驱动

water wind erosion crisscross region; soil respiration rate; seasonal changes; land use pattern; soil temperature; soil moisture; 【摘要】 以黄土高原水蚀风蚀交错区神木县六道沟小流域为研究区,采用动态密闭气室法对植物生长季节(2007年5～10月)5种土地利用方式的土壤呼吸速率进行了测定,并结合水热因子,对不同土地利用方式间土壤呼吸速率的差异性以及其和温度、含水量之间的关系进行了分析。结果表明:5种土地利用类型土壤呼吸速率季节性变化均呈现单峰型曲线,与气温变化趋势一致,其7、8月份土壤呼吸速率均显著高于其它月份(P<0.05);生长季节土壤CO2平均释放速率顺序为:长芒草地>苜蓿地>柠条地>农地>沙柳地,草地在生长前期和旺盛期土壤呼吸强度均显著高于农地和灌木林地;除沙柳地和苜蓿地以外,在土壤呼吸与所有温度指标的关系中,与10cm深度的土壤温度相关性最好,且除沙柳地外,其它4种土地利用类型均与之达到显著相关;农地土壤呼吸对温度的响应最敏感(Q10值为2.20),除沙柳地(Q10值为1.48)外,其它4种土地利用类型Q10值均在2.0左右,接近于全球Q10的平均水平;通过Van’t Hoff模型估算,2007年植物整个生长季节(5～10月份),5种土地利用类型土壤呼吸量从高到低依次为:苜蓿地259gC·m-2,长芒草地236gC·m-2,柠条地226...

Effect of cryoprotectants on hatching rate of red seabream (Pagrus major) embryos

The objectives were to investigate the effect of cryoprotectants on the hatching rate of red seabream embryos. Heart-beat embryos were immersed in: five permeable cryoprotectants, dimethyl sulfoxide (DMSO), glycerol (Gly), methanol (MeOH), 1,2-propylene glycol (PG), and ethylene glycol (EG). in concentrations of 5-30% for 10, 30, or 60 min; and two non-permeable cryoprotectants: polyvinylpyrrolidone (PVP), and sucrose (in concentrations of 5-20% for 10 or 30 min). The embryos were then washed and incubated in filtered seawater until hatching occurred. The hatching rate of the embryos treated with permeable cryoprotectants decreased (P < 0.05) with increased concentration and duration of exposure. In addition, PG was the least toxic permeable cryoprotectant, followed by DMSO and EG, whereas Gly and MeOH were the most toxic. At a concentration of 15% and 30 min exposure, the hatching rate of the embryos immersed in PG was 93.3 +/- 7.0% (mean +/- S.D.), however. in DMSO. EG, Gly. and MeOH, it was 82.7 +/- 10.4, 22.0 +/- 5.7, 0.0 +/- 0.0, and 0.0 +/- 0.0%, respectively. Hatching rate of embryos treated with PVP decreased (P < 0.05) with the increase of concentration and exposure time, whereas for embryos treated with sucrose, there was no significant decrease in comparison with the control at the concentrations used. (C) 2008 Elsevier Inc. All rights reserved.