139 resultados para Er^3
Resumo:
Sources and distribution of polycyclic aromatic hydrocarbons (PAH) in the Ya-Er Lake area (Hubei, China) sediment cores of 3 ponds in the shallow Ya-Er Lake were investigated for 16 PAH. Analytical procedure included extraction by ultrasonication, clean-up by gel-permeation and quantification by HPLC with fluorescence detection. The total PAH amount in sediment samples of the Ya-Er Lake ranged from 68 to 2242 mu g/kg. Concentrations decreased from pond 1 to pond 3 and from upper to lower sediment layers. In addition a soil sample from Ya-Er Lake area showed a total PAH amount of 58 mu g/kg. The PAH pattern in lower sediment layers were similar to that of the soil sample which indicates an atmospheric deposition into the sediments prior to 1970 only. The PAH profile of upper sediment samples, which differs completely from that of lower layers, may be explained by a gradually increasing input of mixed combustion and raw fuel sources since 1970. Therefore the origin of increased PAH contamination in Ya-Er Lake during the last 3 decades has been probably an industrial waste effluent in pond 1.
Resumo:
Silicon nitride films were deposited by plasma-enhanced chemical-vapour deposition. The films were then implanted with erbium ions to a concentration of 8 x 10(20) cm(-3). After high temperature annealing, strong visible and infrared photoluminescence (PL) was observed. The visible PL consists mainly of two peaks located at 660 and 750 nm, which are considered to originate from silicon nanocluster (Si-NCs) and Si-NC/SiNx interface states. Raman spectra and HRTEM measurements have been performed to confirm the existence of Si-NCs. The implanted erbium ions are possibly activated by an energy transfer process, leading to a strong 1.54 mu m PL.
Resumo:
In this study, we report the dependences of infrared luminescence properties of Er-implanted GaN thin films (GaN:Er) on the kinds of substrates used to grow GaN, the growth techniques of GaN, the implantation parameters and annealing procedures. The experimental results showed that the photoluminescence (PL) intensity at 1.54 mum was severely influenced by different kinds of substrates. The integrated PL peak intensity from GaN:Er /Al2O3 (00001) was three and five times stronger than that from GaN:Er /Si (111) grown by molecular beam epitaxy (MBE) and by metalorganic chemical vapor deposition (MOCVD), respectively. The PL spectra observed from GaN:Er/Al2O3 (0001) grown by MOCVD and by MBE displayed a similar feature, but those samples grown by MOCVD exhibited a stronger 1.54 mum PL. It was also found that there was a strong correlation between the PL intensity with ion implantation parameters and annealing procedures. Ion implantation induced damage in host material could be only partly recovered by an appropriate annealing temperature procedure. The thermal quenching of PL from 15 to 300 K was also estimated. In comparison with the integrated PL intensity at 15 K, it is reduced by only about 30 % when going up to 300 K for GaN:Er/Al2O3 sample grown by MOCVD. Our results also show that the strongest PL intensity comes from GaN:Er grown on Al2O3 substrate by MOCVD. (C) 2004 Elsevier B.V. All rights reserved.
Resumo:
We extend the use of Raman spectroscopy to investigate the modes of Er-implanted and Er + O co-implanted GaN, and discuss the influence of O ions on Er3+ -related infrared photoluminescence (PL). It is found that Er3+ implantation introduces new Raman peaks in Raman spectra at frequencies 300 and 670 cm and one additional new peak at 360cm is introduced after Er + O implantation. It is proposed that the broad structure around 300 cm(-1) mode originates from disorder-activated scattering (DARS). The Raman peak at 670 cm is assigned to nitrogen vacancy related defects. The 360 cm peak is attributed to the O implantation induced defect complexes (vacancies, interstitial, or anti-sites in the host). The appearance of the 360 cm(-1) mode results in the decrease of the Er3+ -related infrared PL of GaN: Er + O.
Resumo:
Deep level transient spectroscopy measurements were used to characterize the electrical properties of metal organic chemical vapor deposition grown undoped, Er-implanted and Pr-implanted GaN films. Only one deep level located at 0.270 eV below the conduction band was found in the as-grown GaN films. But four defect levels located at 0.300 eV, 0.188 eV, 0.600 eV and 0.410 eV below the conduction band were found in the Er-implanted GaN films after annealing at 900 degrees C for 30 min, and four defect levels located at 0.280 eV, 0.190 eV, 0.610 eV and 0.390 eV below the conduction band were found in the Pr-implanted GaN films after annealing at 1050 degrees C for 30min. The origins of the deep defect levels are discussed. After annealing at 900 degrees C for 30min in a nitrogen flow, Er-related 1538nm luminescence peaks could be observed for the Er-implanted GaN sample. The energy-transfer and luminescence mechanism of the Er-implanted GaN film are described.
Resumo:
800-1700 nm [Ln(dbm)3phen]Ln = Er, Nd, YbLn-D-P gelXerogel-LnJudd-Ofelt -HhfthHtfnbphen-Si[Ln(hfth)3phen] (Ln = Er, Nd, Yb, Sm)[Pr(tfnb)3phen]MCM-41SBA-15Ln(hfth)3phenMCM-41Pr(tfnb)3phenMCM-41Ln(hfth)3phenSBA-15Pr(tfnb)3phenSBA-15p6mm1300-1600nm Er(dbm)3phenM41(X, Y) (X = 1~14, Y = 3, 6, 12, 18, 24 h)X = 12, Y = 6phen-Si[Ln(dbm)3phen]MCM-41SBA-15(Ln = Er, Nd, Yb)Ln(dbm)3phenM41Ln(dbm)3phenS15Ln(dbm)3phenM41Ln(dbm)3phenS15SBA-15MCM-41 8Q-Si8QSBA-15p6mmLnQ3SBA-15 (Ln = Er, Nd, Yb)QSBA-15LnQ3SBA-15
Resumo:
We report the experimental result of all-optical passive 3.55 Gbit/s non-return-to-zero (NRZ) to pseudo-return-to-zero (PRZ) format conversion using a high-quality-factor (Q-factor) silicon-based microring resonator notch filter on chip. The silicon-based microring resonator has 23800 Q-factor and 22 dB extinction ratio (ER), and the PRZ signals has about 108 ps width and 4.98 dB ER.
Resumo:
RamanGaNErEr+OOEr. RamanErGaN300 cm~(-1)670 cm~(-1)RamanEr+O360 cm~(-1)300 cm~(-1)disorder-activated Raman scattering (DARS)670 cm~(-1)N360 cm~(-1)O. 360 cm~(-1)Er+OGaN(PL)
Resumo:
DLTSFT-IRGaNGaNErPrGaN0270eVGaNEr90030min0300eV0188eV0600eV0410eVGaNPr105030min0280eV0190eV0610eV0390eVErGaN90030minEr1538nm
Resumo:
10~20/cm~31.45m
Resumo:
In this study, we report the dependences of infrared luminescence properties of Er-implanted GaN thin films (GaN:Er) on the kinds of substrates used to grow GaN, the growth techniques of GaN, the implantation parameters and annealing procedures. The experimental results showed that the photoluminescence (PL) intensity at 1.54 mum was severely influenced by different kinds of substrates. The integrated PL peak intensity from GaN:Er /Al2O3 (00001) was three and five times stronger than that from GaN:Er /Si (111) grown by molecular beam epitaxy (MBE) and by metalorganic chemical vapor deposition (MOCVD), respectively. The PL spectra observed from GaN:Er/Al2O3 (0001) grown by MOCVD and by MBE displayed a similar feature, but those samples grown by MOCVD exhibited a stronger 1.54 mum PL. It was also found that there was a strong correlation between the PL intensity with ion implantation parameters and annealing procedures. Ion implantation induced damage in host material could be only partly recovered by an appropriate annealing temperature procedure. The thermal quenching of PL from 15 to 300 K was also estimated. In comparison with the integrated PL intensity at 15 K, it is reduced by only about 30 % when going up to 300 K for GaN:Er/Al2O3 sample grown by MOCVD. Our results also show that the strongest PL intensity comes from GaN:Er grown on Al2O3 substrate by MOCVD. (C) 2004 Elsevier B.V. All rights reserved.
Resumo:
The beta-delayed proton decays of Er-145,Er-147 have been studied experimentally using the Ni-58 + Mo-92 reaction at beam energy of 383 MeV. On the basis of a He-jet apparatus coupled with a tape transport system, the beta-delayed proton radioactivities both from the nu s(1/2) ground state and the nu h(11/2) isomer in Er-145,Er-147 were observed by proton-gamma coincidence measurements. By analyzing the time distributions of the 4(+) -> 2(gamma)(+) transitions in the granddaughter nuclei Dy-144,Dy-146, the half-lives of 1.0 +/- 0.3 s and 1.6 +/- 0.2 s have been deduced for the nu h(11/2) isomers in Er-145,Er-147, respectively.
Resumo:
The beta-delayed proton decay of Er-147 is studied experimentally using the Ni-58+Mo-92 reaction at a beam energy of 383 MeV. Based on a He-jet apparatus coupled with a tape transport system, the beta-delayed proton radioactivities both from the nu s(1/2) ground state and the nu h(11/2) isomer in Er-147 are identified by proton-gamma coincidence measurements. By analyzing the time distribution of the 4(+) -> 2(+) gamma transition in the grand-daughter nucleus Dy-146, a half-life of 1.6 +/- 0.2 s is determined for the nu h(11/2) isomer in Er-147. The half-life for the ground state of Er-147 is estimated to be 3.2 +/- 1.2 s.
Resumo:
The Mg-8Gd-0.6Zr-xEr (x = 1, 3 and 5 mass%) alloys were prepared by casting technology, and the microstructures, age hardening behaviors and mechanical properties of alloys have been investigated. Microstructures of the alloys are characterized by the presence of rosette-shaped equiaxed grains. The age hardening behaviors and the tensile properties are enhanced by adding Er element. The maximum aged hardness of Mg-8Gd-0.6Zr-5Er alloy is 97, it is nearly 1.24 times higher than that of Er-free alloy.
Resumo:
A series of novel, colorless, and transparent sot-gel derived hybrid materials Ln-DBM-Si covalently grafted with Ln(DBM-OH)(3)center dot 2H(2)O (where DBM-OH = o-hydroxydibenzoylmethane, Ln = Nd, Er, Yb, and Sin) were prepared through the primary beta-diketone ligand DBM-OH. The structures and optical properties of Ln-DBM-Si were studied in detail. The investigation results revealed that the lanthanide complexes were successfully in situ grafted into the corresponding hybrids Ln-DBM-Si. Upon excitation at the maximum absorption of ligands, the resultant materials displayed excellent near-infrared luminescence.