16-channel 0.35 mu m CMOS/VCSEL optoelectronic devices

We report some investigations on vertical cavity surface emitting laser (VCSEL) arrays and VCSEL based optoelectronic smart photonic multiple chip modules (MCM), consisting of 1 x 16 vertical cavity surface emitting laser array and 16-channel lasers driver 0.35 mum CMOS circuit. The hybrid integrated multiple chip modules based on VCSEL operate at more than 2GHz in -3dB frequency bandwidth.

Hybrid CMOS/VCSEL optoelectronic modules

We report some investigations on vertical cavity surface emitting laser (VCSEL) arrays and VCSEL based optoelectronic smart photonic multiple chip modules (MCM), consisting of 1x16 vertical cavity surface emitting laser array and 16-channel lasers driver 0.35 Pin CMOS circuit. The hybrid integrated multiple chip modules based on VCSEL operate at more than 2GHz in -3dB frequency bandwidth.

Improvement of CMOS SOS devices characteristics by a modified solid phase epitaxy

CMOS/SOS devices have lower carriers mobility and higher channel leakage current than bulk silicon CMOS devices. These mainly results from the defects of heteroepitaxial silicon film, especially from the defects near Si-Sapphire interface. This paper describes the experiment results of CMOS/SOS devices characteristics improved by a better epitaxial silicon quality which is obtained by a modified solid phase epitaxy.

Flip-chip bonded hybrid CMOS/SEED optoelectronic smart pixels

Hybrid integration of GaAs/AlGaAs multiple quantum well self electro-optic effect device (SEED) arrays are demonstrated flip-chip bonded directly onto 1 mu m silicon CMOS circuits. The GaAs/AlGaAs MQW devices are designed for 850 nm operation. Some devices are used as input light detectors and others serve as output light modulators. The measurement results under applied biases show good optoelectronic characteristics of elements in SEED arrays. Nearly the same reflection spectrum is obtained for the different devices at an array and the contrast ratio is more than 1.2:1 after flip-chip bonding and packaging. The transimpedance receiver-transmitter circuit can be operated at a frequency of 300 MHz.

一种红外探测器专用77K工作CMOS前置放大器

利用single endedfolded cascode结构和MOS管工作在线性区做反馈电阻,实现了一种在77K工作的高性能低功耗、低噪声前置放大器.分析了它的噪声特性,提出了减少噪声的措施.此前置放大器用1.2μm的标准CMOS工艺制造完成.经过测试,这种前置放大器在低温77K下能正常工作,反馈电阻大小为兆欧级,线性度达到了1%,等效输入噪声电流仅0.03pA/Hz,功耗小于1mW.

Design and simulation of charge sensitive preamplifier with CMOS FET implemented as feedback capacitor C-fp

In this paper, to design a new preamplifier for optimum performances with charged-particle or heavy-ion detectors, the CMOS FET is implemented as a feedback capacitor C-fp, so that the entire system should be built only with MOSFET. This work is a revolution design because to realize an ASIC for a preamplifier circuit, the capacitor will also be included. We succeed after a simulation to maintain a rise time less than 3 ns, the output resistance less than 94 Omega and the linearity almost good.

用于粒子探测器的CMOS FET采样保持电路的设计与仿真(英文)；Design and Simulation of Track/Hold Circuit with CMOS FET for Particle Detector

介绍了一个峰保持电路。该电路适用于silicon strip,Si(Li),CdZn Te and CsI等探测器,实现采样-保持功能。已成功进行了基于CMOSFET的采样-保持电路的设计和仿真,通过使用Proteus的PSPICE仿真器和BSIMV3.3模型参数完成了电路性能的仿真。同时,实现了采样时间可在60ns到4.44s范围内进行选择,该电路具有较好的线性。

基于CMOS器件的专用放大电路设计

随着国家大科学工程兰州重离子加速器冷却储存环(HIRFL-CSR)建成，CSRm实验探测系统也正在建设当中。CSRm实验探测系统具有多种探测器数万个探测单元。对于这样先进的探测器和大型实验探测系统采用传统的电子学仪器和方法已经无法构成读出电子学系统和数据获取系统，对前端读出电子学系统、数据获取系统提出更高的要求。因此，采用专用集成电路芯片(ASIC)构成前端读出电子学系统是最可行的方法。本论文所述的基于MOS管的专用放大电路设计正是基于集成电路（ASIC）芯片构建前端读出电子学系统的前期研究子部分。作为ASIC前端读出电子学研究的一部分，本论文主要阐述基于MOS器件的放大电路的研究，主要包括以下内容： 1、设计及实现基于CMOS管的电荷灵敏前置放大器，最后给出制作PCB板后的实验室调试结果； 2、设计仿真基于DMOS管的电荷灵敏前置放大器，对仿真结果进行讨论； 3、利用集成电路设计软件Tanner Pro实现电荷灵敏前置放大器的物理版图设计

Effects of exogenous double-stranded RNA on the basonuclin gene expression in mouse oocytes

In plants and less-advanced animal species, such as C.elegans, introduction of exogenous double-stranded RNA (dsRNA) into cells would trigger degradation of the mRNA with homologous sequence and interfere with the endogenous gene expression. It might represent an ancient anti-virus response which could prevent the mutation in the genome that was caused by virus infection or mobile DNA elements insertion. This phenomenon was named RNA interference, or RNAi. In this study, RNAi was used to investigate the function of basonuclin gene during oogenesis. Microinjection of dsRNA directed towards basonuclin into mouse germinal-vesicle-intact (GV) oocytes brought down the abundance of the cognate mRNA effectively in a time- and concentration-dependent manner. This reduction effect was sequence-specific and showed no negative effect on other non-homologous gene expression in oocytes, which indicated that dsRNA can recognize and cause the degradation of the transcriptional products of endogenous basonuclin gene in a sequence-specific manner. Immunofluorescence results showed that RNAi could reduce the concentration of basonuclin protein to some extent, but the effect was less efficient than the dsRNA targeting towards tPA and cMos which was also expressed in oocytes. This result might be due to the long half life of basonuclin protein in oocytes and the short reaction time which was posed by the limited life span of GV oocytes cultured in vitro. In summary, dsRNA could inhibit the expression of the cognate gene in oocytes at both mRNA and protein levels. The effect was similar to Knock-out technique which was based on homologous recombination. Furthermore, hairpin-style dsRNA targeting basonuclin gene could be produced by transcription from a recombinant plasmid and worked efficiently to deplete the cognate mRNA in oocytes. This finding offered a new way to study the function of basonuclin in the early stage of oogenesis by infection of primordial oocytes with the plasmid expressing hairpin-style basonuclin dsRNA.