206 resultados para 308-U1320A


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介绍了MCGS工控组态软件,并以之构建了CSR真空连锁控制系统和系统的总体结构,相关软硬件和MCGS下设备驱动程序设计,实践证明该系统开发周期短,可靠性高,具有较好的可移植性和可扩充性。

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IEECAS SKLLQG

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完成了两次独立的 1 9F + 93Nb激发函数测量;束流 1 9F8+的入射能量 1 0 0~ 1 0 8MeV,能量步长 2 5 0keV。两次测量的宏观条件完全相同,实验结果有近 1/3的相同能量点所对应的反应截面及其涨落不重复。在双核系统中引入宇称和自旋的退相干描述能量自关联函数中准周期性的衰减结构;用量子混沌运动中初始条件的极端敏感性解释截面及其涨落的不重复

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采用Hela、B16两种细胞分别研究了X射线和重离子在水介质中入射的深度与相应细胞的存活率 (1-失活率 )。结果表明 :X射线与重离子在入射深度与细胞存活关系上有明显不同的变化规律。X射线的入射深度与其细胞存活率呈高度正相关性 ,r =0 .92 ;而重离子通过路径的细胞损伤率较小、且有一个细胞存活较高的坪区 (86 %— 92 % ) ,到射程末端细胞损伤率剧增 ,出现倒Bragg峰。提示 :重离子在深层肿瘤治疗上具有比X射线好的深度治疗分布

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In the present work the photoluminescence (PL) character of sapphire implanted with 180 keV Xe and irradiated with 308 MeV Xe ions was studied. The virgin, implanted and irradiated samples were investigated by PL and Fourier transform infrared (FTIR) spectra measurements. The obtained PL spectra showed the maximum emission bands at 2.75, 3.0 and 3.26 eV for the implanted fluence of 1.0 x 10(15) ions/cm(2) and at 2.4 and 3.47 eV for the irradiated fluence of 1.0 x 10(13) ions/cm(2). The FTIR spectra showed a broaden absorption band between 460 and 630 cm(-1), indicating that strong damaged region formed in Al2O3.

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ZnO films were deposited on (100) Si substrate by radio frequency magnetron sputtering. These films were irradiated at room temperature with 308 MeV Xe-ions to a fluence of 1.0 x 10(12), 1.0 x 10(13) or 1.0 x 10(14) Xe/cm(2). Then the samples were investigated using RBS, XRD, FESEM and PL analyses. The obtained experimental results showed that the deposited ZnO films were highly c-axis orientated and of high purity, 308 MeV Xe-ion irradiations could not change the c-axis oriented. The topography and PL properties of the ZnO films varied with increasing the Xe-ion irradiation fluence. For 1.0 x 10(13) or 1.0 x 10(14) Xe/cm(2) irradiated samples, surface cracks were observed. Furthermore, it was found that the 1.0 x 10(14) Xe/cm(2) irradiated sample exhibiting the strongest PL ability. The modification of structure and PL properties induced by 308 MeV Xe-ion irradiations were briefly discussed. (C) 2008 Elsevier B.V. All rights reserved.

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利用兰州重离子加速器提供的12C6+和36Ar18+离子束对玉米自交系郑58、鲁9801、金象4C-1、CSR24001、308和478进行辐照诱变育种试验,探讨了重离子辐照对玉米的诱变效应。结果显示,重离子辐照后种子出苗率和成苗率根据材料不同表现不一,浸泡后种子对辐照敏感性增加。辐照后M1代叶型变异较大;M2代植株经济性状发生变异较多,产生了许多有益的突变性状;M3代部分突变性状能够稳定遗传。由此可见,重离子束辐照育种有利于品种改良和种质创新,是玉米遗传改良的一种有效手段。

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Inspired by the recent experimental data [J.-G. Wang, et al., Phys. Lett. B 675 (2009) 420], we extend the triaxial projected shell model approach to study the gamma-band structure in odd-mass nuclei. As a first application of the new development, the gamma-vibrational structure of Nb-103 is investigated. It is demonstrated that the model describes the ground-state band and multi-phonon gamma-vibrations quite satisfactorily, supporting the interpretation of the data as one of the few experimentally-known examples of simultaneous occurrence of one- and two-gamma-phonon vibrational bands. This generalizes the well-known concept of the surface gamma-oscillation in deformed nuclei built on the ground-state in even-even systems to gamma-bands based on quasiparticle configurations in odd-mass systems. (c) 2010 Elsevier BM. All rights reserved.

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具有特殊结构的SiO2基材料与Si平面工艺具有好的兼容性,在光电技术中的发光二极管、固体显示屏等器件的研制方面有巨大的潜在应用价值。本论文以快重离子与物质相互作用的特点为依据,选择具有重要应用价值的SiO2基材料,研究快重离子辐照在SiO2基材料中引起的强电子激发效应,特别是辐照相变等现象,探索制备具有特殊功能的新型材料的方法,主要开展了如下研究: 1)在单晶Si衬底上通过高温湿法氧化一层SiO2薄膜,制备出SiO2/Si样品;在室温条件下,用能量为100 keV的碳离子注入样品,注入剂量分别为2.0×1017、5.0×1017和1.2×1018 ions/cm2,使样品SiO2薄膜中一定区域内C、Si和O原子达到适当的原子浓度配比;再用能量为308 MeV的Xe和853 MeV的Pb离子在室温下对注碳后的SiO2/Si样品进行辐照,Xe离子辐照是在兰州重离子加速器国家实验室的扇聚焦回旋加速器(HIRFL-SFC)的重离子辐照终端上完成,辐照剂量分别为1.0×1012、5.0×1012、1.0×1013、1.0×1014 Xe-ions/cm2,Pb离子辐照实验是在法国重离子激光交叉学科研究中心(CIRIL,Caen)的中能离子辐照终端(IRASME)完成的,辐照剂量分别为5.0×1011、1.0×1012、2.0×1012、5.0×1012 Pb-ions/cm2;最后用荧光光谱、红外吸收光谱、拉曼光谱和透射电子显微镜分析等技术对样品进行了表征。研究了样品发光与注碳剂量、辐照剂量和离子在薄膜中电子能损值的依赖关系,辐照引起SiO2薄膜中微结构改变与实验参数的依赖关系。发现快重离子辐照能显著改变注碳SiO2/Si样品的发光特性,如在5.0×1012 Pb-ions/cm2辐照的注碳2.0×1017 ions/cm2的样品中,探测到了很强的位于456、484和563nm的发光;在电镜照片中观察到了8H-SiC纳米晶及其他微结构的形成。基于实验结果,对薄膜发光特性与微结构改变之间的关系进行了初步探讨。 2)利用磁控溅射在单晶SiO2表面沉积Ni薄膜,制备了Ni/SiO2样品;在室温下用能量为308MeV的Xe和853MeV的Pb离子辐照Ni/SiO2样品,离子穿透Ni薄膜和Ni/SiO2界面,Xe、Pb离子辐照分别在HIRFL-SFC和法国CIRIL的IRASME辐照终端上完成,辐照剂量为1.0×1012、5.0×1012 Xe/cm2和5.0×1011Pb/cm2;用卢瑟福背散射技术和X射线衍射谱对样品进行了分析,研究了界面原子混合及相变效应与辐照剂量、电子能损值的依赖关系。发现快重离子辐照能引起Ni/SiO2样品界面处原子的混合,并导致界面形成NiSi2或Ni3Si新相,且原子扩散量随辐照剂量和电子能损值的增大而增大。 3)以热峰模型原理为基础,对实验观测到的快重离子辐照效应特别是电子能损效应的产生机理进行了探讨

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利用开顶箱模拟大气O3与CO2浓度升高,对油松进行了连续4个月的熏蒸实验,探讨了油松针叶抗氧化系统化系统的响应。结果表明:1)高浓度O3显著增加了油松针叶过氧化氢的积累,到处理后期过量的过氧化氢显著地抑制了抗氧化酶活性,如SOD和APX,并且抗坏血酸被耗竭,加剧了膜质过氧化,最终导致了严重氧化伤害;2)高浓度CO2处理中油松针叶抗氧化酶活性普遍低于对照,ASA含量显著高于对照,可能是高CO2浓度促进ASA合成,或者是ASA的消耗减少,到处理后期使H2O2含量比对照降低了15.5%,从而减轻了膜质过氧化产物丙二醛含量,减轻了氧化伤害;3)与O3单因素相比,在协同处理中油松针叶具有较高的抗氧化酶活性和ASA含量,说明高CO2浓度减轻了高O3对抗氧化酶活性的抑制作用,并且提高了针叶内ASA含量,增强了针叶的抗氧化能力,有效地控制了ROS的产生与清除平衡,缓解了高O3带来的氧化伤害。

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Vibronic excitations of the tri-atomic molecule OClO (A(2)A(2)(nu(1), nu(2), nu(3)) <-- (XB1)-B-2 (0, 0, 0)) with weak and strong ultra-short laser fields are studied within full quantum wavepacket dynamics in hyperspherical coordinates. Different dynamics is observed following excitation with laser pulses of different intensities. With a strong laser pulse, many vibrational states are excited and a spatially more localised wavepacket arises. The numerical results show that the population of different vibrational states of the wavepacket on the excited potential energy surface is altered by the intensity of the laser pulse. The numerical results also suggest a related effect on the phase of the wavepacket. These interesting phenomena can be understood by an analysis of the corresponding results for two model diatomic molecules. The possible physical mechanisms of control of chemical processes using strong laser fields are discussed. (C) 2004 Elsevier B.V. All rights reserved.

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为了对石油污染的土壤进行生物修复,从大庆油田油泥和油田污水中富集培养、分离得到52株菌,通过对各菌株的排油活性及表面张力实验,优选出菌株B381、B101、B64和C43,它们产生的表面活性剂的表面张力较低,并且表面活性稳定.对纯化的表面活性剂分析表明,表面活性剂的主要成分为脂肽类(Lipopeptide)、鼠李糖脂(Rham nolipid)、槐糖脂(Sophrolipids)及甘油酯类(G lyceride)化合物.用这4株菌的发酵液进行了油泥处理实验,72 h后石油去除率平均达70%以上.与对照样品相比,石油去除率提高到大约7~9倍.