Electrically Pumped Room-Temperature Pulsed InGaAsP-Si Hybrid Lasers Based on Metal Bonding

A pulsed InGaAsP-Si hybrid laser is fabricated using metal bonding. A novel structure in which the optical coupling and metal bonding areas are transversely separated is employed to integrate the silicon waveguide with an InGaAsP multi-quantum well distributed feedback structure. When electrically pumped at room temperature, the laser operates with a threshold current density of 2.9 kA/cm(2) and a slope efficiency of 0.02 W/A. The 1542 nm laser output exits mainly from the Si waveguide.

Structure, stability and photoelectronic properties of transition films from amorphous to microcrystalline silicon

A series of hydrogenated silicon films near the threshold of crystallinity was prepared by very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD) from a mixture of SiH4 diluted in H, The effect of hydrogen dilution ratios R-H = [H-2]/[SiH4] on microstructure of the films was investigated. Photoelectronic properties and stability of the films were studied as a function of crystalline fraction. The results show that more the crystalline volume fraction in the silicon films, the higher mobility life-time product (mu tau), better the stability and lower the photosensitivity. Those diphasic films contained 8%-31% crystalline volume fraction can gain both the fine photoelectronic properties and high stability. in the diphasic (contained 12% crystalline volume fraction) solar cell, we obtained a much lower light-induced degradation of similar to 2.9%, with a high initial efficiency of 10.01% and a stabilized efficiency of 9.72% (AM1.5, 100 mW/cm(2)). (c) 2005 Elsevier B.V. All rights reserved.

Transition films from amporphous to microcrystalline silicon and solar cells

A series of hydrogenated silicon films near the threshold of crystallinity was prepared by very high frequency plasmaenhanced chemical vapor deposition (VHF-PECVD)from a mixture of SiH4 diluted in H-2. The effect of hydrogen dilution ratios R = [H-2]/[SiH4] on the microstructure of the films was investigated. The photoelectronic properties and stability of the films were studied as a function of crystalline fraction. The results show that the diphasic films gain both the fine photoelectric properties like a-Si: H and high stability like mu w-Si:H. By using the diphasic silicon films as the intrinsic layer, p-i-n junction solar cells were prepared. Current-voltage (J-V) characteristics and stability of the solar cells were measured under an AM1.5 solar simulator. We observed a light-induced increase of 5.2% in the open-circuit voltage (V-oc) and a light-induced degradation of similar to 2.9% inefficiency.

Photoluminescence of doped ZnS nanoparticles under hydrostatic pressure

The pressure dependence of the photoluminescence from ZnS : Mn2+, ZnS : Cu2+, and ZnS : Eu2+ nanoparticles were investigated under hydrostatic pressure up to 6 GPa at room temperature. Both the orange emission from the T-4(1) - (6)A(1) transition of Mn2+ ions and the blue emission from the DA pair transition in the ZnS host were observed in the Mn-doped samples. The measured pressure coefficients are -34.3(8) meV/GPa for the Mn-related emission and -3(3) meV/GPa for the DA band, respectively. The emission corresponding to the 4f(6)5d(1) - 4f(7) transition of Eu2+ ions and the emission related to the transition from the conduction band of ZnS to the t(2) level of Cu2+ ions were observed in the Eu- and Cu-doped samples, respectively. The pressure coefficient of the Eu-related emission was found to be 24.1(5) meV/GPa, while that of the Cu-related emission is 63.2(9) meV/GPa. The size dependence of the pressure coefficients for the Mn-related emission was also investigated. The Mn emission shifts to lower energies with increasing pressure and the shift rate (the absolute value of the pressure coefficient) is larger in the ZnS : Mn2+ nanoparticles than in bulk. Moreover, the absolute pressure coefficient increases with the decrease of the particle size. The pressure coefficients calculated based on the crystal field theory are in agreement with the experimental results. (C) 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

InAs0.3Sb0.7 films grown on (100) GaSb substrates with a buffer layer by liquid-phase epitaxy

The growth of InAsxSb1-x films on (100) GaSb substrates by liquid-phase epitaxy (LPE) has been investigated and epitaxial InAs0.3Sb0.7 films with InAs0.9Sb0.09 buffer layers have been successfully obtained. The low X-ray rocking curve FHWM values of InAs0.3Sb0.7 layer shows the high quality of crystal-orientation structure. Hall measurements show that the highest electron mobility in the samples obtained is 2.9 x 10(4) cm(2) V-1 s(-1) and the carrier density is 2.78 x 10(16)cm(-3) at room temperature (RT). The In As0.3Sb0.7 films grown on (10 0) GaSb substrates exhibit excellent optical performance with a cut-off wavelength of 12 mu m. (c) 2007 Elsevier B.V. All rights reserved.

Si-based resonant-cavity-enhanced photodetector

We report one top-illumination and one bottom-illumination SiGe/Si multiple quantum-well (MQW) resonant-cavity-enhanced (RCE) photodetector fabricated on a separation-by-implanted-oxygen (SIMOX) wafer operating near 1300 nm. The buried oxygen layer in SIMOX is used as a mirror to form a vertical cavity with the silicon dioxide/silicon Bragg reflector deposited on the top surface. A peak responsivity with a reverse bias of 5 V is measured 10.2 mA/W at 1285 nm, a full width at half maximum of 25 nm for the top-illumination RCE photodetector, 19 mA/W at 1305 nm, and a full width at half maximum of 14 nm for the bottom-illumination one. The external quantum efficiency of the bottom-illumination RCE photodetector is up to 2.9% at 1305 nm, with a reverse bias of 25V. The responsivity of the bottom-illumination RCE photodetector is improved by two-fold compared with that of the top-illumination one. (C) 2001 Society of Photo-Optical Instrumentation Engineers.

Size and shape evolution of self-assembled coherent InAs/GaAs quantum dots influenced by seed layer

The size and shape Evolution of self-assembled InAs quantum dots (QDs) influenced by 2.0-ML InAs seed layer has been systematically investigated for 2.0, 2.5, and 2.9-ML deposition on GaAs(1 0 0) substrate. Based on comparisons with the evolution of InAs islands on single layer samples at late growth stage, the bimodal size distribution of InAs islands at 2.5-ML InAs coverage and the formation of larger InAs quantum dots at 2.9-ML deposition have been observed on the second InAs layer. The further cross-sectional transmission electron microscopy measurement indicates the larger InAs QDs: at 2.9-ML deposition on the second layer are free of dislocation. In addition, the interpretations for the size and shape evolution of InAs/GaAs QDs on the second layer will be presented. (C) 2001 Elsevier Science B.V. All lights reserved.

Effects of seed layer on the realization of larger self-assembled coherent InAs/GaAs quantum dots

The size and shape evolution of self-assembled InAs quantum dots (QDs) influenced by 2.0 ML InAs seed layer has been systematically investigated for 2.0, 2.5, and 2.9 ML deposition on GaAs(100) substrate. Based on comparisons with the formation of large incoherent InAs islands on single-layer samples at late growth stage, the larger coherent InAs quantum dots at 2.9 ML deposition has been observed on the second InAs layer. A simple model analysis accounting for the surface strain distribution influenced by buried islands gives a stronger increment of critical QD diameter for dislocation nucleation on the second layer in comparison with the single-layer samples. Additionally, the inhibition of dislocation nucleation in InGaAs/GaAs large islands can also be explained by our theoretical results. (C) 2000 American Institute of Physics. [S0021-8979(00)08922-2].

半导体光电子技术

本书是“高新技术科普丛书”之一。作为信息领域的核心技术，半导体光电子技术在光通信、光盘存储、光纤传感、激光加工以及医疗、军事等方面有着重要的应用，它的发展将直接影响世界经济的进展和人类生活水平的提高。全书共11章，第1章介绍半导体光电子技术的由来和发展趋势；第2、3章重点介绍半导体光电子材料和器件工作原理；第4章到第9章介绍半导体激光器、探测器、光波导器件、光电子集成的结构和特性以及外延生长、微细加工等制造技术，同时介绍了CCD、太阳能电池等器件；最后两章介绍半导体光电子技术的应用。

半导体的检测与分析

本书的内容与1984年第一版的内容完全不同。本书介绍补充了这二十年来半导体科研、生产中最常用的各种检测、分析方法和原理。全书共分7章，包括引论，半导体的高分辨X射线衍射，光学检测与分析，表面、薄膜成分分析，扫描探针显微学在半导体中的运用，透射电子显微学及其在半导体中的应用和半导体深中心的表征。书中根据实践列举了一些实例，同时附有大量参考文献和常用的数据，以便读者进一步参考和应用。

低轮FOX分组密码的碰撞-积分攻击

FOX是最近推出的系列分组密码，它的设计思想基于可证安全的研究结果，且在各种平台上的性能优良．本文利用碰撞攻击和积分攻击相结合的技术分析FOX的安全性，结果显示碰撞-积分攻击比积分攻击有效，攻击对4轮FOX64的计算复杂度是2^45.4，对5轮FOX64的计算复杂度是2^109.4，对6轮FOX64的计算复杂度是2^173.4，对7轮FOX64的计算复杂度是2^237.4，且攻击所需数据量均为2^9；也就是说4轮FOX64／64、5轮FOX64／128、6轮FOX64／192和7轮FOX64／256对本文攻击是不免疫的．

L-蓝光膜覆盖水稻幼苗的生理及对孕穗、结实的后效应

L－蓝光膜是中国科学学院广州能源研究所研制成功的大田作物覆盖薄新产品。采用L－蓝光膜覆盖水稻秧苗，阴天膜内日均温比透明膜高0.3℃，比露天处理高1.8℃，而晴天分别高0.8℃和2.9℃，增加苗干重、苗根活力和秧苗成活率。叶绿素含量、叶绿体光还原活力、光合速率、RuBP－Case活性、可溶性糖、淀粉、NO－2－N、NH＋4－N蛋白质含量、RN活性均比透明膜及露天处理的提高。秧苗覆盖处理的孕穗期植株仍有良好的生理效应，且抽穗期比透明膜早3d，比露天处理的早5d，穗粒性状改善，谷产量提高

施氮水平对黄土旱塬区小麦产量和土壤有机碳、氮的影响

施用氮肥是提高作物产量和土壤有机碳(SOC)、氮(TSN)含量的重要养分管理措施。利用长期田间试验(19842~007),定量评价了常规耕作条件下5个施氮水平N 0(N0)、45(N45)、90(N90)、135(N135)和180(N180)kg/hm2处理下,小麦子粒产量、SOC、TSN和氮肥利用效率的变化。研究了施氮水平对黄土旱塬区小麦产量、SOC和TSN积累的影响。结果表明,19842~007年期间,N0、N45、N90、N135和N180处理小麦产量的平均值依次为1.2、2.4、2.9、3.2和3.4t/hm2;N0处理的小麦产量随试验年限而降低,年降低幅度达67 kg/hm2(P<0.001);但增施氮肥处理小麦产量降低趋势得到显著控制,当施氮水平提高到N 90 kg/hm2时,产量随年限呈现出缓慢升高的趋势。随着施氮水平的提高,地上部氮肥利用率由40%(N45)降低到28%(N180)。不同施氮水平条件下,SOC含量随年限呈缓慢升高趋势。23年后(2007年),N0、N45、N90、N135和N180处理下,0—20 cm土层SOC储量依次为16.9、18.2、18.7、19.0和19.1 t/...

长期水分胁迫下氮、钾对夏玉米叶片光合特性的影响

采用2种不同夏玉米基因型(陕单9号,抗旱品种;陕单911,不抗旱品种)的盆栽试验,研究了长期水分胁迫下氮、钾对各生育期叶片净光合速率、蒸腾速率、胞间二氧化碳浓度和叶绿素含量的影响,旨在从光合生理特性揭示这些因子的抗旱机理。结果表明,长期水分胁迫下叶片净光合速率,蒸腾速率、胞间二氧化碳浓度(除成熟期)和叶绿素含量显著降低,不抗旱品种降幅更甚。抗旱品种的净光合速率和叶绿素含量大于不抗旱品种,而蒸腾速率和胞间二氧化碳浓度则相反。两品种苗期光合作用较弱,净光合速率和叶绿素含量均较低,抽雄期达到高峰。施氮能不同程度降低水分胁迫下玉米叶片的蒸腾速率,增加叶绿素含量.提高净光合速率,从而减缓水分胁迫对光合作用的伤害。随氮肥用量增加,不抗旱品种净光合速率和叶绿素含量显著升高,蒸腾速率和胞间二氧化碳浓度明显降低,两种氮肥用量间有显著差异;抗旱品种在低氮用量时效果显著,但高低氮用量间无显著区别。钾对受水分胁迫的玉米表现出比氮肥更突出的效果。相反,在适量供水条件下,氮、钾肥的作用明显下降。以上结果表明,适当用量的氮、钾肥可以有效地改善水分胁迫下作物叶片的光合特性,从而增强作物的抗旱性。