Contrastive study of two SESAMs for passive mode-locking in Nd:YVC>4 laser with low pump power

Two semiconductor saturable absorber mirrors (SESAMs), of which one is coated with 50% reflection film on the top and the other is not, were contrastively studied in passively mode-locked solid-state lasers which were pumped by low output power laser diode (LD). Experiments have shown that reducing the modulation depth of SESAM by coating partial reflection film, whose reflectivity is higher than that between SESAM and air interface, is an effective method to get continuous wave (CW) mode-locking instead of Q-switched mode-locking (QML) in low power pumped solid-state lasers. A simple Nd:YVO4 laser pumped by low power LD, in which no water-cooling system was used, could obtain CW mode-locking by the 50% reflector coated SESAM with average output power of ~ 20 mW

4-W single transverse mode Yb3+-doped fiber laser pumped by 915-nm laser diode array

A cladding-pumped ytterbium-doped fiber laser is described in this letter. Using unusual pumping source with 915-nm wavelength, slope efficiency up to 75% with respect to absorbed input power and output power is obtained, a maximum output power of 4.006 W with fundamental mode is measured.

1.55μm Laser Diode Monolithically Integrated with Spot-Size Converter Using Conventional Process

A novel 1.55μm laser diode with spot-size converter is designed and fabricated using conventional photolithography and chemical wet etching process.For the laser diode,a ridge double-core structure is employed.For the spot-size converter,a buried ridge double-core structure is incorporated.The laterally tapered active core is designed and optically combined with the thin and wide passive core to control the size of mode.The laser diode threshold current is measured to be 40mA together with high slop efficiency of 0.35W/A.The beam divergence angles in the horizontal and vertical directions are as small as 14.89°×18.18°,respectively,resulting in low-coupling losses with a cleaved optical fiber (3dB loss).

High power continuous-wave operation of self-organized In(Ga)As/GaAs quantum dot lasers

Quantum dot (QD) lasers are expected to have superior properties over conventional quantum well lasers due to a delta-function like density of states resulting from three dimensional quantum confinements. QD lasers can only be realized till significant improvements in uniformity of QDs with free of defects and increasing QD density as well in recent years. In this paper, we first briefly give a review on the techniques for preparing QDs, and emphasis on strain induced self-organized quantum dot growth. Secondly, self-organized In(Ga)As/GaAs, InAlAs/GaAlAs and InAs/InAlAs Qds grown on both GaAs and InP substrates with different orientations by using MBE and the Stranski-Krastanow (SK) growth mode at our labs are presented. Under optimizing the growth conditions such as growth temperature, V/III ratio, the amount of InAs, InxGa1-xAs, InxAl1-xAs coverage, the composition x etc., controlling the thickness of the strained layers, for example, just slightly larger than the critical thickness and choosing the substrate orientation or patterned substrates as well, the sheet density of ODs can reach as high as 10(11) cm(-2), and the dot size distribution is controlled to be less than 10% (see Fig. 1). Those are very important to obtain the lower threshold current density (J(th)) of the QD Laser. How to improve the dot lateral ordering and the dot vertical alignment for realizing lasing from the ground states of the QDs and further reducing the Jth Of the QD lasers are also described in detail. Thirdly based on the optimization of the band engineering design for QD laser and the structure geometry and growth conditions of QDs, a 1W continuous-wave (cw) laser operation of a single composite sheet or vertically coupled In(Ga)As quantum dots in a GaAs matrix (see Fig. 2) and a larger than 10W semiconductor laser module consisted nineteen QD laser diodes are demonstrated. The lifetime of the QD laser with an emitting wavelength around 960nm and 0.613W cw operation at room temperature is over than 3000 hrs, at this point the output power was only reduced to 0.83db. This is the best result as we know at moment. Finally the future trends and perspectives of the QD laser are also discussed.

High power 980 nm Al-free strained quantum-well lasers for erbium-doped fiber amplifiers

In this paper, we reported on the fabrication of 980 nm InGaAs/InGaAsP strained quantum-well (QW) lasers with broad waveguide. The laser structure was grown by low-pressure metalorganic chemical vapor deposition on a n(+)- GaAs substrate. For 3 mu m stripe ridge waveguide lasers, the threshold current is 30 mA and the maximum output power and the output power operating in fundamental mode are 350 mW and 200 mW, respectively. The output power from the single mode fiber is up to 100 mW, the coupling efficiency is 50%. We also fabricated 100 mu m broad stripe coated lasers with cavity length of 800 mu m, a threshold current density of 170 A/cm(2), a high slope efficiency of 1.03 W/A and a far-field pattern of 40 x 6 degrees are obtained. The maximum output power of 3.5 W is also obtained for 100 mu m wide coated lasers. (C) 2000 Elsevier Science B.V. All rights reserved.

Thermal fracture characteristics induced by laser beam

The damage mechanism of a cracked material due to laser beam thermal shock is an important problem when the interactions of high power laser beam with materials are studied. The transient thermal stress intensity factors (TSIFs) for a center crack in an infinite plate subjected to laser beam thermal shock are investigated. When the crack is in the heat affected zone, the compressive thermal stress causes the crack surface to come into contact with each other over a certain contact length, but the high tensile stresses around the crack tip tend to open the crack. In this case, the problem may be treated as a pair of embedded cracks problem with a smooth closure condition of the center crack. The TSIFs and the crack contact lengths are calculated with different laser beam spatial shapes. The TSIFs induced by thermal shock are in marked different from those induced by general mechanical loading.

Mechanisms of thermal shock failure for ultra-high temperature ceramic

The materials considered in our analysis were ZrB2 ceramic matrix composites. Effect of two different additives (graphite and AlN) on thermal shock stability for the materials was measured by water quench test. It showed that it may provide more stable thermal shock properties with additives of graphite. It was explained by different thermal properties and crack resistance of the two materials in detail. Surface oxidation was one of main reasons for strength degradation of ceramic with additives of graphite after quenched in water, and surface crack was one of main reasons for strength degradation of ceramic with additives of AlN after quenched in water. It was presented that it was a potential method for improving thermal shock stability of ZrB2 ceramic matrix composites by introducing proper quantities of graphite.

Sinusoidal phase-modulating laser diode interferometer for measuring angular displacement

We propose a sinusoidal phase-modulating laser diode interferometer for measuring small angular displacement. The interferometer is based on a Fabry-Perot plate. It has a simple structure and is insensitive to external disturbance. Sinusoidal phase-modulating interferometry is used for improving the measurement accuracy. A charge-coupled device (CCD) image sensor is used for measuring the distance between the reflected beams from two faces of the Fabry-Perot plate. From the distance, the initial angle of incidence is calculated. Compared with Michelson interferometers and autocollimators, this interferometer has the advantage of compact size and simple structure. The numerical calculation and experimental results verify the usefulness of this novel interferometer. (C) 2004 Society of Photo-Optical Instrumentation Engineers.

Simple ABCD matrix method for evaluating optical coupling system of laser diode to single-mode fiber with a lensed-tip

In this paper, we present a simple technique to determine the coupling efficiency between a laser diode and a lensed-tip based on the ABCD transformation matrix method. We have compared our analysis technique to that of previous work and have found that the presented method is reliable in predicting the coupling efficiency of lensed-tip and has the advantage of simplicity of coupling efficiency calculation even by a pocket calculator. The results can be useful for designing coupling optics. (c) 2005 Elsevier GmbH. All rights reserved.

Measurement of the wavefront of a laser diode system for intersatellite communication by a Jamin double-shearing interferometer

The frame of a laser diode transmitter for intersatellite communication is concisely introduced. A simple, novel and visual method for measuring the diffraction-limited wavefront of the transmitter by a Jamin double-shearing interferometer is proposed. To verify the validity of the measurement, the far-field divergence of beam is additionally rigorously analysed in terms of the Fraunhofer diffraction. The measurement, the necessary analyses and discussion are given in detail. By directly measuring the fringe widths and quantitatively interpreting the interference fringes, the minimum detectable wavefront height (DWH) of the wavefront is only 0.2 gimel (the distance between the perfect plane wavefront and the actual wavefront at the transmitting aperture) and the corresponding divergence is only 65.84 mu rad. This indicates that the wavefront approaches the diffraction-limited condition. The results show that this interferometer is a powerful tool for testing the semiconductor laser beam's wavefront, especially the diffraction-limited wavefront.

Temporal-space-transforming pulse-shaping system with a knife-edge apparatus for a high-energy laser facility

For the first time to our knowledge, in a high-energy laser facility with an output energy of 454.37 J, by using a temporal-space-transforming pulse-shaping system with our own design of a knife-edge apparatus, we obtained a quasi-square laser pulse. (c) 2005 Optical Society of America.

二元振幅型面板用于光束空间整形

为了提高高功率激光系统的整体效率和充分利用光能,需要对前端注入的高斯光束进行空间整形,实现驱动器终端激光的均匀化输出。采用振幅型二元面板对激光光束进行空间强度整形,利用误差扩散法进行了理论设计,数值摸拟了整形效果,同时讨论了面板加工误差以及空间滤波器的小孔大小等因素带来的影响。根据理论设计,分别加工了反高斯透射率分布和抛物线透射率分布的二元面板,并进行了整形实验,实现了各自的整形功能,并做了误差分析。实验证明二元面板能对激光光束的空间强度分布实现了精确的整形。

高重复率半导体激光抽运Nd：YAG放大器激光特性的实验研究

实验研究了高重复率、大功率半导体激光二极管阵列（LDA）侧面环绕抽运的Nd：YAG激光放大器的放大特性、热焦距变化和热致双折射效应引起的退偏特性。偏振光绎千赫兹高功率单通激光放大器，获得约3倍的光脉冲能量放大，脉冲宽度基本保持不变，其输出的P分量与S分量的能量比趋于常数3：1，实验测得的能量放大倍率及放大光束的椭圆偏振度与理论预期吻合很好。