224 resultados para topological insulator


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A conservation equation for topological charges of phase singularities (scroll and spiral waves) in excitable media is given. It provides some topological properties of scroll (spiral) waves: for example, the topological charge of the generated or annihilated spiral pair must be opposite. Additionally, we obtain another equation on scroll waves, which shows that singular filaments of scroll waves occur on a set of one-dimensional curves which may be either closed loops or infinite lines.

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We give a generalized Lagrangian density of 1 + 1 Dimensional O( 3) nonlinear sigma model with subsidiary constraints, different Lagrange multiplier fields and topological term, find a lost intrinsic constraint condition, convert the subsidiary constraints into inner constraints in the nonlinear sigma model, give the example of not introducing the lost constraint. N = 0, by comparing the example with the case of introducing the lost constraint, we obtain that when not introducing the lost constraint, one has to obtain a lot of various non-intrinsic constraints. We further deduce the gauge generator, give general BRST transformation of the model under the general conditions. It is discovered that there exists a gauge parameter beta originating from the freedom degree of BRST transformation in a general O( 3) nonlinear sigma model, and we gain the general commutation relations of ghost field.

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By using phi-mapping topological current theory and gauge potential decomposition, we discuss the self-dual equation and its solution in the SU(N) Dunne-Jackiw-Pi-Trugenberger model and obtain a new concrete self-dual equation with a 6 function. For the SU(3) case, we obtain a new self-duality solution and find the relationship between the soliton solution and topological number which is determined by the Hopf index and Brouwer degree of phi-mapping. In our solution, the flux of this soliton is naturally quantized.

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Reactions of zinc(II) or cadmium(II) salts with terephthalic acid (H(2)tp) and 1,3-bis(4-pyridyl) propane (bpp) have afforded four coordination polymers at room temperature, [Zn(mu-tp)(mu-bpp)](n)center dot 2nH(2)O (1), [Cd-2(mu-tp)(2)(mu-bpp)(3)](n)center dot 2nH(2)O (2), [Cd(mu-tp)(mu-bpp)(H2O)](n)center dot nH(2)O (3), and [Cd-2(mu-tp)(mu-bpp)(2)(bpp)(2)Br-2](n) (4). Single-crystal X-ray diffraction has revealed interesting topological features for these compounds.

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Organic thin-film transistors (OTFTs) using high dielectric constant material tantalum pentoxide (Ta2O5) and benzocyclobutenone (BCBO) derivatives as double-layer insulator were fabricated. Three metals with different work function, including Al (4.3 eV), Cr (4.5 eV) and Au (5.1 eV), were employed as gate electrodes to study the correlation between work function of gate metals and hysteresis characteristics of OTFTs. The devices with low work function metal Al or Cr as gate electrode exhibited high hysteresis (about 2.5 V threshold voltage shift). However, low hysteresis (about 0.7 V threshold voltage shift) OTFTs were attained based on high work function metal Au as gate electrode.

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A novel bilayer photoresist insulator is applied in flexible vanadyl-phthalocyanine (VOPc) organic thin-film transistors (OTFTs). The micron-size patterns of this photoresisit insulator can be directly defined only by photolithography without the etching process. Furthermore, these OTFTs exhibit high field-effect mobility (about 0.8 cm(2)/Vs) and current on/off ratio (about 10(6)). In particular, they show rather low hysteresis (< 1 V). The results demonstrate that this bilayer photoresist insulator can be applied in large-area electronics and in the facilitation of patterning insulators.

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We investigated electrical properties of vanadyl phthalocyanine (VOPc) metal-insulator-semiconductor (MIS) devices by the measurement of capacitance and conductance, which were fabricated on ordered para-sexiphenyl (p-6P) layer by weak epitaxy growth method. The VOPc/p-6P MIS diodes showed a negligible hysteresis effect at a gate voltage of +/- 20 V and small hysteresis effect at a gate voltage of +/- 40 V due to the low interface trap state density of about 1x10(10) eV(-1) cm(-2). Furthermore, a high transition frequency of about 10 kHz was also observed under their accumulation mode. The results indicated that VOPc was a promising material and was suitable to be applied in active matrix liquid crystal displays and organic logic circuits.

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Different fluoride materials are used as gate dielectrics to fabricate copper phthalocyanine (CuPc) thin film. transistors (OTFTs). The fabricated devices exhibit good electrical characteristics and the mobility is found to be dependent on the gate voltage from 10(-3) to 10(-1) cm(2) V(-1)s(-1). The observed noticeable electron injection at the drain electrode is of great significance in achieving ambipolar OTFTs. The same method for formation of organic semiconductors and gate dielectric films greatly simplifies the fabrication process. This provides a convenient way to produce high-performance OTFTs on a large scale and should be useful for integration in organic displays.

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Polyamide- 6(PA 6)/polytetrafluoroethylene is studied as a potential gate dielectric for flexible organic thin film transistors. The same method used for the formation of organic semiconductor and gate dielectric films greatly simplifies the fabrication process of devices. The fabricated transistors show good electrical characteristics. Ambipolar behaviour is observed even when the device is operated in air.

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Two new Cull coordination polymers, namely [Cu-2(BDC)(2)(L)(4)(H2O)(2)]center dot 14H(2)O (1) and [Cu-1.5(BTC)(L)(1.5)(H2O)(0.5)]center dot 2H(2)O (2), where L = 1,1'-(1,4-butanediyl)bis(imidazole), BDC = 1,4-benzene dicarboxylate, and BTC = 1,3,5-benzenetricarboxylate, have been synthesized at room temperature. Complex 1 exhibits an unusual, square-planar, four-connected 2D (2)(6)4 net, which has been predicated by Wells. Interestingly, three types of water clusters, namely (H2O)(6), (H2O)(8), and (H2O)(10), are observed in the hydrogen-bonded layers constructed by the BDC ligands and water molecules. The BTC anion in compound 2 is coordinated to the Cu" cation as tetradentate ligand to form a (6(6))(2)(4(2)6(4)8(4))(2)(6(4)810) net containing three kinds of nonequivalent points, Thermogravimetric analyses (TGA) and IR spectra for 1 and 2 are also discussed in detail.

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The activities/properties of two molecules with identical formula but different configuration states of the asymmetric atoms are different. Thus, usually the common topological indices are not suitable. In this study, the chiral topological indices were obtained by extending A(mi) indices suggested by our laboratory and molecular connectivity indices. The modified topologial indices have been used for the studies on D2 for dopamine receptor and a receptor activities of fourteen N-alkylated 3-(3-hydroxypyenyl)-piperidines. It has been observed that selected variables possess low correlations. The results obtained by using multiple regression analysis and artificial neural networks are satisfactory.

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We report the fabrication of organic thin-film transistors (OTFTs) with copper phthalocyanine (CuPc) as the semiconductor and calcium fluoride (CaF2) as the gate dielectric on the glass substrate. The fabricated transistors show a gate voltage dependent carrier field effect mobility that ranges from 0.001 to 0.5 cm(2) V-1 s(-1). In the devices, the CaF2 dielectric is formed by thermal evaporation; thus OTFTs with a top-gate structure can be fabricated. This provides a convenient way to produce high-performance OTFTs on a large scale and should be useful for the integration of organic displays.

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Organic thin film transistors based on pentacene are fabricated by the method of full evaporation. The thickness of insulator film can be controlled accurately, which influences the device operation voltage markedly. Compared to the devices with a single-insulator layer, the electric performance of devices by using a double-insulator as the gate dielectric has good improvement. It is found that the gate leakage current can be reduced over one order of magnitude, and the on-state current can be enhanced over one order of magnitude. The devices with double-insulator layer exhibit field-effect mobility as large as 0.14 cm(2)/Vs and near the zero threshold voltage. The results demonstrate that using proper double insulator as the gate dielectrics is an effective method to fabricate OTFTs with high electrical performance.

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During the development of our ESESOC system (Expert System for the Elucidation of the Structures of Organic Compounds), computer perception of topological symmetry is essential in searching for the canonical description of a molecular structure, removing the irredundant connections in the structure generation process, and specifying the number of peaks in C-13- and H-1-NMR spectra in the structure evaluation process. In the present paper, a new path identifier is introduced and an algorithm for detection of topological symmetry from a connection table is developed by the all-paths method. (C) 1999 Elsevier Science B.V. All rights reserved.

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In this work, the A(m) indices and the molecular connectivity indices of fifty aromatic compounds have been calculated, and applied for studying on relationship between partition coefficient and structure of aromatic compounds. The results demonstrate that the property of compounds can be described better with revisionary A(m) indices.