Low Temperature Deposited Nano-structured Vanadium Oxide Thin Films for Uncooled Infrared Detectors

A novel process of room temperature ion beam sputtering deposition of vanadium oxide films and low temperature post annealing for uncooled infrared detectors was proposed in this work. VOx thin films with relatively low square resistance (70 K Omega / square) and large temperature coefficient of resistance (more than 3%/K) at room temperature were fabricated using this low temperature process which was very compatible with the process of uncooled infrared detectors based on micromachined technology. Furthermore, chemical composition and film surface have been characterized using X-ray photoelectron spectroscopy (XPS) and scanning electron microscopy (SEM) respectively. The results showed that the main composition of the processed thin films was V2O5 and the thin films were in the process of crystallization.

Heavily doped polycrystalline 3C-SiC growth on SiO2/Si(100) substrates for resonator applications

3C-SiC is a promising material for the development of microelectromechanical systems (MEMS) applications in harsh environments. This paper presents the LPCVD growth of heavily nitrogen doped polycrystalline 3C-SiC films on Si wafers with 2.0 mu m-thick silicon dioxide (SiO2) films for resonator applications. The growth has been performed via chemical vapor deposition using SiH4 and C2H4 precursor gases with carrier gas of H-2 in a newly developed vertical CVD chamber. NH3 was used as n-type dopant. 3C-SiC films were characterized by scanning electron microscopy (SEM), x-ray diffraction (XRD), x-ray photoelectron spectroscopy (XPS), secondary ion mass spectroscopy (SIMS), and room temperature Hall Effect measurements. It was shown that there is no voids at the interface between 3C-SiC and SiO2. Undoped 3C-SiC films show n-type conduction with resisitivity, Hall mobility, and carrier concentration at room temperature of about 0.56 Omega center dot cm, 54 cm(2)/Vs, and 2.0x 10(17) cm(-3), respectively. The heavily nitrogen doped polycrystalline 3C-SiC with the resisitivity of less than 10(-3) Omega center dot cm was obtained by in-situ doping. Polycrystalline SiC resonators have been fabricated preliminarily on these heavily doped SiC films with thickness of about 2 mu m. Resonant frequency of 49.1 KHz was obtained under atmospheric pressure.

Homoepitaxial growth and MOS structures of 4H-SiC on off oriented n-type (0001)Si-faces

Homoepitaxial growth of 4H-SiC on off-oriented n-type Si-face (0001) substrates was performed in a home-made hot-wall low pressure chemical vapor deposition (LPCVD) reactor with SiH4 and C2H4 at temperature of 1500 C and pressure of 20 Torr. The surface morphology and intentional in-situ NH3 doping in 4H-SiC epilayers were investigated by using atomic force microscopy (AFM) and secondary ion mass spectroscopy (SIMS). Thermal oxidization of 4H-SiC homoepitaxial layers was conducted in a dry O-2 and H-2 atmosphere at temperature of 1150 C. The oxide was investigated by employing x-ray photoelectron spectroscopy (XPS). 4H-SiC MOS structures were obtained and their C-V characteristics were presented.

One-pot synthesis and self-assembly of colloidal copper(I) sulfide nanocrystals

A simple one-pot method is developed to prepare size-and shape-controlled copper(I) sulfide (Cu2S) nanocrystals by thermolysis of a mixed solution of copper acetylacetonate, dodecanethiol and oleylamine at a relatively high temperature. The crystal structure, chemical composition and morphology of the as-obtained products are characterized by powder x-ray diffraction (PXRD), x-ray photoelectron spectroscopy (XPS), Auger electron spectroscopy (AES), transmission electron microscopy (TEM) and scanning electron microscopy (SEM). The morphology and size of the Cu2S nanocrystals can be easily controlled by adjusting the reaction parameters. The Cu2S nanocrystals evolve from spherical to disk-like with increasing reaction temperature. The spherical Cu2S nanocrystals have a high tendency to self-assemble into close-packed superlattice structures. The shape of the Cu2S nanodisks changes from cylinder to hexagonal prism with prolonged reaction time, accompanied by the diameter and thickness increasing. More interestingly, the nanodisks are inclined to self-assemble into face-to-face stacking chains with different lengths and orientations. This one-pot approach may extend to synthesis of other metal sulfide nanocrystals with different shapes and sizes.

STUDY OF TI/LNP INTERFACE BY PES

The interface of Ti/InP(110) was studied by X-ray photoelectron spectroscopy (XPS) and ultraviolet photoelectron spectroscopy (UPS). It is evident that deposition of Ti on the surface of InP(110) at room temperature introduced a break of the In-P bond and a diffusion of In atoms into the Ti film. The interaction of Ti and P occurred at a temperature of 350-degrees-C.

Aggregation and precipitation in high dose as ion implanted Ge0.5Si0.5 alloy

Thermally stimulated redistribution and precipitation of excess arsenic in Ge0.5Si0.5 alloy has been studied by X-ray photoelectron spectroscopy (XPS), cross sectional transmission electron microscopy (XTEM) and X-ray energy disperse spectrometry (EDS). Samples were prepared by the implantation of 6 X 10(6) As+ cm(-2) and 100 keV with subsequent thermal processing at 800 degrees C and 1000 degrees C for 1 h. The XPS depth profiles from the implanted samples before and after the thermal annealing indicate that there is marked redistribution of the elements in heavily arsenic-implanted Ge0.5Si0.5 alloys during the annealing, including: (1) diffusion of As from the implanted region to the surface; (2) aggregation of Ge in the vicinity of the surface. A high density of precipitates was observed near the surface which were by XTEM and EDS identified as an arsenide. It is suggested that most of the implanted As in Ge0.5Si0.5 alloy exists in the form of GeAs.

Characterization of Phosphorus Diffused ZnO Bulk Single Crystals

Phosphorus was diffused into CVT grown undoped ZnO bulk single crystals at 550 and 800℃ in a closed quartz tube. The P-diffused ZnO single crystals were characterized by the Hall effect, X-ray photoelectron spectroscopy （XPS）, photoluminescence spectroscopy （PL）, and Raman scattering. The P-diffused ZnO single crystals are n-type and have higher free electron concentration than undoped ZnO, especially for the sample diffused at 800℃. The PL measurement reveals defect related visible broad emissions in the range of 420-550nm in the P-diffused ZnO samples. The XPS result suggests that most of the P atoms substitute in the Zn site after they diffuse into the ZnO single crystal at 550℃ ,while the P atom seems to occupy the O site in the ZnO samples diffused at 800℃. A high concentration of shallow donor defect forms in the P-diffused ZnO,resulting in an apparent increase of free electron concentration.

LPCVD Growth of 3C-SiC on Si Mesas and SiO2/Si Substrates for MEMS Applications

This paper presents the development of LPCVD growth of 3C-SiC thin films grown on Si mesas and thermally oxidized SiO2 masks over Si with an area of 150 × 100μm^2 and SiO2/Si substrates. The growth has been performed via chemical vapor deposition using SiH4 and C2H4 precursor gases with carrier gas of H2. 3C-SiC films on these substrates were characterized by optical microscopy, X-ray diffraction （ XRD ）, X-ray photoelectron spectroscopy （ XPS ）, scanning electron microscopy （SEM） and room temperature Hall effect measurements. It is shown that there were no voids at the interface between 3C-SiC and SiO2.

Electrical properties of GaN deposited on nitridated sapphire by molecular beam epitaxy using NH3 cracked on the growing surface

We have found that GaN epilayers grown by NH3-source molecular beam epitaxy (MBE) contain hydrogen. Dependent on the hydrogen concentration, GaN on (0001) sapphire can be either under biaxially compressive strain or under biaxially tensile strain. Furthermore, we notice that background electrons in GaN increase with hydrogen incorporation. X-ray photoelectron spectroscopy (XPS) measurements of the N1s region indicate that hydrogen is bound to nitrogen. So, the microdefect Ga...H-N is an effective nitrogen vacancy in GaN, and it may be a donor partly answering for the background electrons. (C) 1999 Elsevier Science B.V. All rights reserved.

Field emission from TiO2/Ti nanotube arrays with different morphologies

Well-aligned TiO2/Ti nanotube arrays were electrochemically formed in a HF solution for different anodization times. Field emission scanning electron microscopy (FE-SEM) images reveal that anodization time had a great influence on the morphology of TiO2/Ti nanotube arrays. The composition of resulting nanotubes was analyzed by X-ray photoelectron spectroscopy (XPS). Field emission properties of the prepared samples with different morphologies were investigated by the Fowler-Nordheim (F-N) theory. The results indicate that the morphology can affect field emission behaviors. TiO2/Ti nanotube arrays with clear, uniform, and short nanotubes display moderate field emission properties, and have the better turn-on field of 4.6 V/mu m and good field emission stability. (C) 2010 Elsevier B.V. All rights reserved.

Probing into the catalytic nature of Co/sulfated zirconia for selective reduction of NO with methane

In this work, the structural and surface properties of Co-loaded sulfated zirconia (SZ) catalysts were studied by X-ray diffraction (XRD), N-2 adsorption, NH3-TPD, FT-IR spectroscopy, H-2-TPR, UV-vis diffuse reflectance spectroscopy (DRS), X-ray photoelectron spectroscopy (XPS), and NO-TPD. NH3-TPD and FT-IR spectra results of the catalysts showed that the sulfation process of the support resulted in the generation of strong Bronsted and Lewis acid sites, which is essential for the SCR of NO with methane. On the other hand, the N-2 adsorption, H-2-TPR, UV/vis DRS, and XPS of the catalysts demonstrated that the presence of the SO42- species promoted the dispersion of the Co species and prevented the formation Of Co3O4. Such an increased dispersion of Co species suppressed the combustion reaction of CH4 by O-2 and increased the selectivity toward NO reduction. The NO-TPD proved that the loading of Co increased the adsorption of NO over SZ catalysts, which is another reason for the promoting effect of Co. (C) 2004 Elsevier Inc. All rights reserved.

Evidence for perimeter sites over SmOx-modified Rh(100) surface by CO chemisorption

SmOx modified Rh(l 0 0) surfaces have been in-situ prepared by depositing metallic Sin and subsequently oxidizing under controlled conditions, and the interaction between the lanthanide oxide and transition metal has been characterized by means of X-ray photoelectron spectroscopy (XPS) and high-resolution electron-energy-loss spectroscopy (HREELS) as well as thermal desorption spectroscopy (TDS). As evidenced, the adsorption of CO on the modified surfaces shows some different features to the original surface of Rh(l 00). The covering of SmOx blocks some sites on the surface and consequently suppresses adsorption of the typical CO species with an uptake at about 500 K, while a novel desorption peak centered at 260 K emerges in the CO TDS. Correspondingly, the XP spectrum exhibits a new C Is peak at 287.9 eV and 0 Is peak at 532.6 eV. The intensity of the low temperature peak varies with the coverage of SmOx, which shows an actual correlation to the perimeter sites of SmOx particles on the surface. (C) 2004 Elsevier B.V. All rights reserved.

Gelatin multilayer assembled on the poly(L-lactic acid) surface for better cytocompatibility

Gelatin multilayers were assembled on PLLA substrate at pH 3, 5, and 7, which was below, around, and above the isoelectric point of the amphoteric polymer, using the layer-by-layer assembly technique. The multilayer deposition on the PLLA substrate was monitored by X-ray photoelectron spectroscopy (XPS) and water contact angle measurement. The XPS, water contact angle, and atomic force microscopy data indicated that the layer thickness, surface hydrophicity, and surface morphology of the gelatin multilayers assembled strongly depended on the pH at which the layers were deposited

Facile electrochemical approach to fabricate hierarchical flowerlike gold micro structures: Electrodeposited superhydrophobic surface

A templateless, surfactantless, electrochemical approach is proposed to directly fabricate hierarchical flowerlike gold microstructures (HFGMs) on an indium tin oxide (ITO) substrate. The as-prepared HFGMs have been characterized by scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD) and cyclic voltammetry.

Facile synthesis of poly(o-phenylenediamine) microfibrils using cupric sulfate as the oxidant

A rapid, templateless, surfactantless approach is proposed to prepare microfibrils by simply mixing of aqueous cupric sulfate and o-phenylenediamine (oPD) solutions at room temperature. The as-prepared poly(o-phenylenediamine) (PoPD) microfibrils have been characterized by optical microscope, transmission electron microscope (TEM), X-ray photoelectron spectroscopy (XPS), Fourier transform infrared spectroscopy (FTIR), ultraviolet-visible spectroscopy (UV-vis) and X-ray diffraction (XRD).