Effect of cryoprotectants on hatching rate of red seabream (Pagrus major) embryos

The objectives were to investigate the effect of cryoprotectants on the hatching rate of red seabream embryos. Heart-beat embryos were immersed in: five permeable cryoprotectants, dimethyl sulfoxide (DMSO), glycerol (Gly), methanol (MeOH), 1,2-propylene glycol (PG), and ethylene glycol (EG). in concentrations of 5-30% for 10, 30, or 60 min; and two non-permeable cryoprotectants: polyvinylpyrrolidone (PVP), and sucrose (in concentrations of 5-20% for 10 or 30 min). The embryos were then washed and incubated in filtered seawater until hatching occurred. The hatching rate of the embryos treated with permeable cryoprotectants decreased (P < 0.05) with increased concentration and duration of exposure. In addition, PG was the least toxic permeable cryoprotectant, followed by DMSO and EG, whereas Gly and MeOH were the most toxic. At a concentration of 15% and 30 min exposure, the hatching rate of the embryos immersed in PG was 93.3 +/- 7.0% (mean +/- S.D.), however. in DMSO. EG, Gly. and MeOH, it was 82.7 +/- 10.4, 22.0 +/- 5.7, 0.0 +/- 0.0, and 0.0 +/- 0.0%, respectively. Hatching rate of embryos treated with PVP decreased (P < 0.05) with the increase of concentration and exposure time, whereas for embryos treated with sucrose, there was no significant decrease in comparison with the control at the concentrations used. (C) 2008 Elsevier Inc. All rights reserved.

Long period grating for 3-5 mu m quantum-well infra-red photodetectors

By considering all possible high order diffracted waves, the authors calculate the coupling efficiency of long period gratings for 3-5 mu m quantum-well infra-red photodetectors (QWIPs) on the basis of the modal expansion model (MEM). A large coupling efficiency for 3-5 mu m QWIPs has been demonstrated. This greatly reduces the difficulties in fabricating 3-5 mu m grating coupled QWIPs and opens the way to fabricate high performance 3-5 mu m and two colour QWIPs image arrays.

Gain Switch of an AlGaInP Red Light Semiconductor Laser Diode

We solve the single mode coupled rate equations by computer, simulate the behavior of a gain switch of an AlGalnP red light semiconductor laser diode, and find the characteristic of FWHM of pulses changing with the amplitude of modulation signal, the bias current, and the modulated frequency. On this basis, we conduct experiments. The experiment results accord with the simulations well.

High power red-light GaInP/AlGaInP laser diodes with nonabsorbing windows based on Zn diffusion-induced quantum well intermixing

The layer structure of GaInP/AlGaInP quantum well laser diodes (LDs) was grown on GaAs substrate using low-pressure metalorganic chemical vapor deposition (LP-MOCVD) technique. In order to improve the catastrophic optical damage (COD) level of devices, a nonabsorbing window (NAW), which was based on Zn diffusion-induced quantum well intermixing, was fabricated near the both ends of the cavities. Zn diffusions were respectively carried out at 480, 500, 520, 540, and 580 Celsius degree for 20 minutes. The largest energy blue shift of 189.1 meV was observed in the window regions at 580 Celsius degree. When the blue shift was 24.7 meV at 480 Celsius degree, the COD power for the window LD was 86.7% higher than the conventional LD.

Ultralow Threshold Red Vertical-Cavity Surface-Emitting Lasers

国家自然科学基金

Strong red light emission from silicon nanocrystals embedded in SIO2 matrix

In this study, silicon nanocrystals embedded in SiO2 matrix were formed by conventional plasma enhanced chemical vapor deposition (PECVD) followed by high temperature annealing. The formation of silicon nanocrystals (nc-Si), their optical and micro-structural properties were studied using various experimental techniques, including Fourier transform infrared spectroscopy, micro-Raman spectra, high resolution transmission electron microscopy and x-ray photoelectron spectroscopy. Very strong red light emission from silicon nanocrystals at room temperature (RT) was observed. It was found that there is a strong correlation between the PL intensity and the substrate temperature, the oxygen content and the annealing temperature. When the substrate temperature decreases from 250degreesC to RT, the PL intensity increases by two orders of magnitude.